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    Temperature independent microelectromechanical switches
    31.
    发明申请
    Temperature independent microelectromechanical switches 失效
    温度独立的微机电开关

    公开(公告)号：US20050077987A1

    公开(公告)日：2005-04-14

    申请号：US10785205

    申请日：2004-02-24

    Applicant: David Forehand

    Inventor： David Forehand

    IPC: H01H51/22

    CPC classification number: B81B3/0081 ,  B81B3/001 ,  B81B2201/018 ,  H01H59/0009

    Abstract: The present invention provides a method and apparatus for reducing temperature dependency within Microelectromechanical System (MEMS) switches. The two typical designs for such MEMS switches are fixed-fixed and fixed-free designs. Springs are used in the fixed-fixed design to account for dimensional changes as a result of thermal expansion. The fixed-free designs utilize a tether to prevent a cantilever arm from deforming as a result of thermal expansions, as well as reducing tight controls in the manufacture of fixed-free MEMS switches. Additionally, to prevent stiction in MEMS switches, a variegated electrode design is provided to utilize internal stresses of a suspended beam to increase the restoring force while not increasing the actuation force.

    Abstract translation: 本发明提供了一种用于降低微机电系统（MEMS）开关内的温度依赖性的方法和装置。 这种MEMS开关的两个典型设计是固定和固定设计。 弹簧用于固定固定设计，以解释由于热膨胀导致的尺寸变化。 无固定设计利用系绳防止悬臂由于热膨胀而变形，以及减少制造无固定MEMS开关的严格控制。 另外，为了防止MEMS开关中的静电，提供了多样化的电极设计，以利用悬挂梁的内部应力来增加恢复力而不增加致动力。

    MEMS RF switch module including a vertical via
    32.
    发明申请
    MEMS RF switch module including a vertical via 有权
    MEMS射频开关模块包括垂直通孔

    公开(公告)号：US20040264152A1

    公开(公告)日：2004-12-30

    申请号：US10606633

    申请日：2003-06-25

    Inventor： John M. Heck ,  Tsung-Kuan Allen Chou ,  Joseph S. Hayden III

    IPC: H05K007/06

    CPC classification number: B81B7/007 ,  B81B2201/018 ,  H01H1/0036 ,  H01H1/5805 ,  H01L2224/16

    Abstract: An apparatus and method to provide a micro-electromechanical systems (MEMS) radio frequency (RF) switch module with a vertical via. The MEMS RF switch module includes a MEMS die coupled to a cap section. The vertical via passes through the cap section to electrically couple an RF switch array of the MEMS die to a printed circuit board (PCB). In one embodiment, the MEMS die includes a trace ring surrounding at least a portion of the RF switch array so that a signal may enter or exit the MEMS RF switch module using the vertical via without crossing the trace ring.

    Abstract translation: 提供具有垂直通孔的微机电系统（MEMS）射频（RF）开关模块的装置和方法。 MEMS RF开关模块包括耦合到盖部分的MEMS管芯。 垂直通孔穿过盖部分以将MEMS管芯的RF开关阵列电耦合到印刷电路板（PCB）。 在一个实施例中，MEMS管芯包括围绕RF开关阵列的至少一部分的迹线环，使得信号可以使用垂直通孔进入或退出MEMS RF开关模块，而不穿过迹线环。

    Method for registering a deposited material with channel plate channels, and switch produced using same
    33.
    发明授权
    Method for registering a deposited material with channel plate channels, and switch produced using same 失效
    用于登记具有通道板通道的沉积材料的方法，以及使用其制造的开关

    公开(公告)号：US06809277B2

    公开(公告)日：2004-10-26

    申请号：US10349712

    申请日：2003-01-22

    Applicant: Marvin Glenn Wong ,  Paul Thomas Carson

    Inventor： Marvin Glenn Wong ,  Paul Thomas Carson

    IPC: H01H2900

    CPC classification number: B81C1/00611 ,  B81B2201/018 ,  B81C2201/0121 ,  H01H1/0036 ,  H01H2029/008

    Abstract: A method for depositing material on a channel plate such that the material is registered to one or more channels formed in the channel plate includes filling at least one of the channels with a resist that is not wetted by the material; depositing the material on at least a region of the channel plate that includes at least part of the resist; and then removing the resist. The method may be used, in one embodiment, to apply an adhesive or gasket material that is used in assembling a switch.

    Abstract translation: 一种用于在通道板上沉积材料使得该材料与通道板中形成的一个或多个通道对准的方法包括用未被该材料润湿的抗蚀剂填充至少一个通道; 将所述材料沉积在所述通道板的至少一部分，所述区域包括所述抗蚀剂的至少一部分; 然后除去抗蚀剂。 在一个实施例中，可以使用该方法来施加用于组装开关的粘合剂或垫圈材料。

    Method of fabricating micro-electromechanical switches on CMOS compatible substrates
    37.
    发明授权
    Method of fabricating micro-electromechanical switches on CMOS compatible substrates 有权
    在CMOS兼容基板上制造微机电开关的方法

    公开(公告)号：US06635506B2

    公开(公告)日：2003-10-21

    申请号：US10014660

    申请日：2001-11-07

    Applicant: Richard P. Volant ,  John C. Bisson ,  Donna R. Cote ,  Timothy J. Dalton ,  Robert A. Groves ,  Kevin S. Petrarca ,  Kenneth J. Stein ,  Seshadri Subbanna

    Inventor： Richard P. Volant ,  John C. Bisson ,  Donna R. Cote ,  Timothy J. Dalton ,  Robert A. Groves ,  Kevin S. Petrarca ,  Kenneth J. Stein ,  Seshadri Subbanna

    IPC: H01L2100

    CPC classification number: B81C1/00246 ,  B81B2201/016 ,  B81B2201/018 ,  B81B2203/0127 ,  B81B2207/07 ,  B81C1/00611 ,  B81C2201/0122 ,  B81C2203/0735 ,  H01G5/40 ,  H01H59/0009

    Abstract: A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.

    Abstract translation: 描述了使用兼容工艺和材料制造与常规半导体互连级别集成的微机电开关（MEMS）的方法。 该方法基于制造容易修改以产生用于接触切换和任何数量的金属 - 介电金属开关的各种配置的电容开关。 该过程开始于铜镶嵌互连层，由金属导体嵌入电介质中。 铜互连的全部或部分凹陷到足以在开关处于闭合状态时提供电容气隙的程度，并为例如Ta / TaN的保护层提供空间。 在为开关指定的区域内限定的金属结构用作致动器电极以下拉可移动光束并且提供一个或多个路径用于开关信号横越。 气隙的优点是空气不会受到可能导致可靠性和电压漂移问题的电荷储存或捕集。 代替使电极凹陷以提供间隙，可以仅在电极上或周围添加电介质。 下一层是另一介质层，其被沉积到形成在下电极和形成开关器件的可移动梁之间的间隙的期望厚度上。 通过该电介质制造通孔以提供金属互连层和还包含可切换光束的下一个金属层之间的连接。 然后对通孔层进行图案化和蚀刻以提供包含下部激活电极以及信号路径的空腔区域。 然后用牺牲脱模材料填充空腔。 然后将该释放材料与电介质的顶部平坦化，由此提供构造波束层的平坦表面。

    Electronic microcomponent of the variable capacitor or microswitch type, and process for fabricating such a component
    39.
    发明申请
    Electronic microcomponent of the variable capacitor or microswitch type, and process for fabricating such a component 审中-公开
    可变电容器或微型开关类型的电子微组件，以及用于制造这种部件的工艺

    公开(公告)号：US20020132387A1

    公开(公告)日：2002-09-19

    申请号：US10151744

    申请日：2002-05-20

    Applicant: Memscap

    Inventor： Catherine Charrier ,  Eric Bouchon ,  Alain Campo ,  Guy Imbert ,  Francois Valentin ,  Laurent Basteres

    IPC: H01L021/00

    CPC classification number: B81C1/00158 ,  B81B3/007 ,  B81B2201/018 ,  B81B2203/0127 ,  B81B2203/0307 ,  B81B2203/033 ,  B81C2201/0109 ,  B81C2201/0197 ,  H01G5/16 ,  H01H1/0036

    Abstract: Process for fabricating electronic components, of the variable capacitor or microswitch type, comprising a fixed plate (1) and a deformable membrane (20) which are located opposite each other, which comprises the following steps, consisting in: depositing a first metal layer on an oxide layer (2), said first metal layer being intended to form the fixed plate; depositing a metal ribbon (10, 11) on at least part of the periphery and on each side of the fixed plate (1), said ribbon being intended to serve as a spacer between the fixed plate (1) and the deformable membrane (20); depositing a sacrificial resin layer (15) over at least the area of said fixed plate (1); generating, by lithography, a plurality of wells in the surface of said sacrificial resin layer; depositing, by electrolysis, inside the wells formed in the sacrificial resin (15), at least one metal region intended to form the deformable membrane (20), this metal region extending between sections of the metal ribbon (10, 11) which are located on each side of said fixed plate (1); removing the sacrificial resin layer (15).

    Abstract translation: 用于制造可变电容器或微型开关类型的电子部件的方法包括彼此相对定位的固定板（1）和可变形膜（20），其包括以下步骤：将第一金属层沉积在 氧化物层（2），所述第一金属层旨在形成所述固定板; 在固定板（1）的周边的至少一部分和每一侧上沉积金属带（10,11），所述带旨在用作固定板（1）和可变形膜（20）之间的间隔件 ）; 在所述固定板（1）的至少所述区域上沉积牺牲树脂层（15）; 通过光刻产生在所述牺牲树脂层的表面中的多个孔; 通过电解在形成在牺牲树脂（15）中的阱内沉积旨在形成可变形膜（20）的至少一个金属区域，该金属区域在位于金属带（10,11）的部分之间延伸 在所述固定板（1）的每一侧上; 去除牺牲树脂层（15）。

    Process of fabricating electronic microcomponent of the variable capacitor or microswitch type
    40.
    发明授权
    Process of fabricating electronic microcomponent of the variable capacitor or microswitch type 失效
    制造可变电容器或微动开关类型的电子微元件的工艺

    公开(公告)号：US06444488B2

    公开(公告)日：2002-09-03

    申请号：US09858092

    申请日：2001-05-15

    Applicant: Catherine Charrier ,  Eric Bouchon ,  Alain Campo ,  Guy Imbert ,  François Valentin ,  Laurent Basteres

    Inventor： Catherine Charrier ,  Eric Bouchon ,  Alain Campo ,  Guy Imbert ,  François Valentin ,  Laurent Basteres

    IPC: H01L2100

    CPC classification number: B81C1/00158 ,  B81B3/007 ,  B81B2201/018 ,  B81B2203/0127 ,  B81B2203/0307 ,  B81B2203/033 ,  B81C2201/0109 ,  B81C2201/0197 ,  H01G5/16 ,  H01H1/0036

    Abstract: Process for fabricating electronic components, of the variable capacitor or microswitch type, comprising a fixed plate (1) and a deformable membrane (20) which are located opposite each other, which comprises the following steps, consisting in: depositing a first metal layer on an oxide layer (2), said first metal layer being intended to form the fixed plate; depositing a metal ribbon (10, 11) on at least part of the periphery and on each side of the fixed plate (1), said ribbon being intended to serve as a spacer between the fixed plate (1) and the deformable membrane (20); depositing a sacrificial resin layer (15) over at least the area of said fixed plate (1); generating, by lithography, a plurality of wells in the surface of said sacrificial resin layer; depositing, by electrolysis, inside the wells formed in the sacrificial resin (15), at least one metal region intended to form the deformable membrane (20), this metal region extending between sections of the metal ribbon (10, 11) which are located on each side of said fixed plate (1); removing the sacrificial resin layer (15).

    Abstract translation: 用于制造可变电容器或微型开关类型的电子部件的方法包括彼此相对定位的固定板（1）和可变形膜（20），其包括以下步骤：将第一金属层沉积在 氧化物层（2），所述第一金属层旨在形成所述固定板;在所述固定板（1）的周边的至少一部分和所述固定板（1）的每一侧上沉积金属带（10,11），所述带是 旨在用作固定板（1）和可变形膜（20）之间的间隔件;在至少所述固定板（1）的区域上沉积牺牲树脂层（15）;通过光刻产生多个 在所述牺牲树脂层的表面中的孔;通过电解在形成在牺牲树脂（15）中的阱内部，至少一个旨在形成可变形膜（20）的金属区域沉积，该金属区域在 金属带（10,11） 位于所述固定板（1）的每一侧上;去除所述牺牲树脂层（15）。

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