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    SYSTEM AND METHODS FOR HIGHLY INTEGRATED OPTICAL READOUT MEMS SENSORS
    35.
    发明申请
    SYSTEM AND METHODS FOR HIGHLY INTEGRATED OPTICAL READOUT MEMS SENSORS 有权
    用于高度集成的光读出MEMS传感器的系统和方法

    公开(公告)号：US20160320180A1

    公开(公告)日：2016-11-03

    申请号：US14721914

    申请日：2015-05-26

    Applicant: Honeywell International Inc.

    Inventor： Grant H. Lodden ,  Robert D. Horning

    IPC: G01B11/27 ,  G01P15/13 ,  G02B6/43 ,  G02B6/12 ,  G02B6/42

    CPC classification number: G01B11/272 ,  B81B2201/0228 ,  B81B2201/04 ,  B81B2203/053 ,  G01C19/5621 ,  G01C19/5656 ,  G01C25/00 ,  G01P15/093 ,  G01P15/13 ,  G01P21/00 ,  G01P2015/0822 ,  G02B6/12 ,  G02B6/4295 ,  G02B6/43 ,  G02B2006/12138

    Abstract: System and methods for highly integrated optical readout MEMS sensors are provided. In one embodiment, a method for an integrated waveguide optical-pickoff sensor comprises: launching a laser beam generated by a laser light source into an integrated waveguide optical-pickoff monolithically fabricated within a first substrate, the integrated waveguide optical-pickoff including an optical input port, a coupling port, and an optical output port; and detecting an amount of coupling of the laser beam from the coupling port to a sensor component separated from the coupling port by a gap by measuring an attenuation of the laser beam at the optical output port.

    Abstract translation: 提供了高集成度光读出MEMS传感器的系统和方法。 在一个实施例中，一种用于集成波导光学传感器传感器的方法包括：将由激光光源产生的激光束发射到在第一衬底内单片制造的集成波导光学传感器中，所述集成波导光学传感器包括光输入 端口，耦合端口和光输出端口; 以及通过测量光输出端口处的激光束的衰减来检测激光束从耦合端口到与耦合端口分离的传感器部件之间的间隙的耦合量。

    PACKAGE DEVICE FOR MICROELECTROMECHANICAL INERTIAL SENSOR
    36.
    发明申请
    PACKAGE DEVICE FOR MICROELECTROMECHANICAL INERTIAL SENSOR 审中-公开
    微电子实时传感器的封装装置

    公开(公告)号：US20150048463A1

    公开(公告)日：2015-02-19

    申请号：US13968830

    申请日：2013-08-16

    Applicant: TXC CORPORATION

    Inventor： CHIEN-WEI CHIANG

    IPC: B81B7/00

    CPC classification number: B81C1/0023 ,  B81B2201/0228 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2924/16195 ,  H01L2924/16235 ,  H01L2924/00014

    Abstract: A package device for a microelectromechanical inertial sensor comprises a ceramic substrate having an upper accommodation space and a lower accommodation and having a plurality of interconnect metal lines thereinside; a microelectromechanical system (MEMS) chip mounted inside the upper accommodation of the ceramic substrate and electrically connected with the interconnect metal lines; a top cover arranged on the ceramic substrate and sealing the upper accommodation space; and an integrated circuit (IC) chip mounted inside the lower accommodation space and electrically connected with the interconnect metal lines. The present invention can improve the reliability of components, increase the yield and decrease the fabrication cost.

    Abstract translation: 用于微机电惯性传感器的封装装置包括具有上部容置空间和下部容置并且具有多个位于其内部的互连金属线的陶瓷衬底; 微机电系统（MEMS）芯片，其安装在陶瓷基板的上部容置部分内并与互连金属线路电连接; 顶盖，布置在陶瓷基板上并密封上容纳空间; 以及集成电路（IC）芯片，其安装在下容纳空间内并与互连金属线电连接。 本发明可以提高部件的可靠性，提高产量并降低制造成本。

    ENCAPSULATION STRUCTURE INCLUDING A MECHANICALLY REINFORCED CAP AND WITH A GETTER EFFECT
    37.
    发明申请
    ENCAPSULATION STRUCTURE INCLUDING A MECHANICALLY REINFORCED CAP AND WITH A GETTER EFFECT 有权
    包括机械加固盖和盖子效应的包封结构

    公开(公告)号：US20150028433A1

    公开(公告)日：2015-01-29

    申请号：US14331285

    申请日：2014-07-15

    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT

    Inventor： Xavier BAILLIN ,  Bernard DIEM ,  Jean-Philippe POLIZZI ,  Andre ROUZAUD

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81B7/0058 ,  B81B7/0038 ,  B81B7/0077 ,  B81B2201/0228 ,  B81B2207/096 ,  B81C1/00285 ,  B81C1/00301 ,  B81C1/00682 ,  B81C2201/053 ,  B81C2203/0136 ,  B81C2203/0163 ,  H01L2224/16145 ,  H01L2224/16225

    Abstract: A structure (100) for encapsulating at least one microdevice (104) produced on and/or in a substrate (102) and positioned in at least one cavity (110) formed between the substrate and a cap (106) rigidly attached to the substrate, in which the cap includes at least: one layer (112) of a first material, one face of which (114) forms an inner wall of the cavity, and mechanical reinforcement portions (116) rigidly attached at least to the said face of the layer of the first material, partly covering the said face of the layer of the first material, and having gas absorption and/or adsorption properties, and in which the Young's modulus of a second material of the mechanical reinforcement portions is higher than that of the first material.

    Abstract translation: 一种用于封装至少一个在基板（102）上和/或基板（102）上产生并位于至少一个形成在基板和刚性地附接到基板的盖（106）之间的空腔（110）中的微器件（104）的结构（100） ，其中所述盖至少包括：第一材料的一层（112），其一个面（114）形成所述空腔的内壁，以及至少刚性地附接到所述表面的所述表面的机械加强部分（116） 所述第一材料层，部分覆盖所述第一材料层的所述表面，并且具有气体吸收和/或吸附性能，并且其中所述机械增强部分的第二材料的杨氏模量高于 第一种材料。

    TRANSPORTATION DEVICE HAVING A MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR
    38.
    发明申请
    TRANSPORTATION DEVICE HAVING A MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR 有权
    在半导体基板上具有单一集成多传感器器件的传输器件及其方法

    公开(公告)号：US20140264659A1

    公开(公告)日：2014-09-18

    申请号：US14207443

    申请日：2014-03-12

    Applicant: BISHNU PRASANNA GOGOI

    Inventor： BISHNU PRASANNA GOGOI

    IPC: B81B7/02

    CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

    Abstract: A transportation device is provided having multiple sensors configured to detect and measure different parameters of interest. The transportation device includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The transportation device couples a first parameter to be measured directly to the direct sensor. Conversely, the transportation device can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the transportation device by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors such as a microphone, an accelerometer, and a temperature sensor to reduce cost, complexity, simplify assembly, while increasing performance.

    Abstract translation: 提供了具有多个传感器的运输装置，其被配置为检测和测量不同的感兴趣的参数。 运输装置包括至少一个单片集成多传感器（MIMS）装置。 MIMS器件包括形成在公共半导体衬底上的至少两种不同类型的传感器。 例如，MIMS装置可以包括间接传感器和直接传感器。 运输装置将待测量的第一参数直接耦合到直接传感器。 相反，运输装置可间接地将待测量的第二参数耦合到间接传感器。 可以通过将传感器堆叠到MIMS装置或耦合到MIMS装置的另一基板上而将其它传感器添加到运输装置。 这支持集成多个传感器，如麦克风，加速度计和温度传感器，以降低成本，复杂性，简化组装，同时提高性能。

    Thin micromachined structures
    40.
    发明授权
    Thin micromachined structures 有权
    薄的微加工结构

    公开(公告)号：US06808956B2

    公开(公告)日：2004-10-26

    申请号：US09749171

    申请日：2000-12-27

    Applicant: Cleopatra Cabuz ,  Jeffrey Alan Ridley

    Inventor： Cleopatra Cabuz ,  Jeffrey Alan Ridley

    IPC: H01L2100

    CPC classification number: B81C1/0015 ,  B81B2201/0228 ,  B81C2201/019

    Abstract: Methods for making thin silicon layers suspended over recesses in glass wafers or substrates are disclosed. The suspended silicon wafers can be thin and flat, and can be made using methods not requiring heavy doping or wet chemical etching of the silicon. Devices suitable for production using methods according to the invention include tuning forks, combs, beams, inertial devices, and gyroscopes. One embodiment of the present invention includes providing a thin silicon wafer, and a glass wafer or substrate. Recesses are formed in one surface of the glass wafer, and electrodes are formed in the recesses. The silicon wafer is then bonded to the glass wafer over the recesses. The silicon wafer is them etched to impart the desired suspended or silicon wafer structure. In another embodiment of the present invention, the silicon wafer has a patterned metal layer. The silicon wafer is bonded to the glass wafer, with the patterned metal layer positioned adjacent the recesses in the glass wafer. The silicon wafer is selectively etched down to the metal layer, which serves as an etch stop. The metalized layer can provide sharper feature definition at the silicon-metalization layer interface, and may also serve to seal gasses within the recessed cavities of the glass wafer during the silicon etching process. The metal layer can then be subsequently removed.

    Abstract translation: 公开了将薄硅层悬浮在玻璃晶片或衬底中的凹槽上的方法。 悬浮的硅晶片可以是薄且平坦的，并且可以使用不需要对硅进行重掺杂或湿化学蚀刻的方法制成。 适用于根据本发明的方法生产的装置包括调谐叉，梳，梁，惯性装置和陀螺仪。 本发明的一个实施例包括提供薄硅晶片和玻璃晶片或基板。 凹部形成在玻璃晶片的一个表面上，电极形成在凹部中。 然后将硅晶片在凹槽上结合到玻璃晶片。 硅晶片被刻蚀以赋予所需的悬浮或硅晶片结构。 在本发明的另一个实施例中，硅晶片具有图案化的金属层。 硅晶片结合到玻璃晶片，图案化金属层位于玻璃晶片中的凹槽附近。 硅晶片被选择性地向下蚀刻到用作蚀刻停止层的金属层。 金属化层可以在硅 - 金属化层界面处提供更清晰的特征定义，并且还可以用于在硅蚀刻工艺期间将气体密封在玻璃晶片的凹陷空腔内。 然后可以随后去除金属层。

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