公开(公告)号：US20160218032A1

公开(公告)日：2016-07-28

申请号：US15090144

申请日：2016-04-04

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  Timothy A. Quick

IPC: H01L21/768 ,  B81C1/00 ,  H01L21/311

CPC classification number: C08F299/0492 ,  B81C1/00031 ,  B81C2201/013 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  C08F299/02 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31133 ,  H01L21/76802 ,  H01L21/76828 ,  H01L21/76877

Abstract: Methods for fabricating sub-lithographic, nanoscale microstructures utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract translation: 提供了使用自组装嵌段共聚物制备亚光刻，纳米尺度微结构的方法，以及由这些方法形成的膜和器件。

公开(公告)号：US20150137331A1

公开(公告)日：2015-05-21

申请号：US14605276

申请日：2015-01-26

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Dan B. Millward ,  Donald L. Westmoreland

IPC: H01L29/06 ,  H01L21/02

CPC classification number: H01L29/0657 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  G03F7/0002 ,  H01L21/02118 ,  H01L21/0223 ,  H01L29/06 ,  Y10S438/947 ,  Y10S977/888 ,  Y10S977/895 ,  Y10S977/90 ,  Y10T428/24182 ,  Y10T428/24521 ,  Y10T428/2462 ,  Y10T428/249921

Abstract: Methods for fabricating sublithographic, nanoscale microstructures in line arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Semiconductor structures may include self-assembled block copolymer materials in the form of lines of half-cylinders of a minority block matrix of a majority block of the block copolymer. The lines of half-cylinders may be within trenches in the semiconductor structures.

Abstract translation: 提供了利用自组装嵌段共聚物在线阵列中制备亚光刻，纳米尺度微结构的方法，以及由这些方法形成的膜和器件。 半导体结构可以包括嵌段共聚物的多数嵌段的少数嵌段基体的半圆柱体形式的自组装嵌段共聚物材料。 半圆柱体的线可以在半导体结构的沟槽内。

公开(公告)号：US08993088B2

公开(公告)日：2015-03-31

申请号：US13928746

申请日：2013-06-27

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  Donald L. Westmoreland

IPC: H01L29/02 ,  H01L29/06 ,  B81C1/00 ,  B82Y30/00

CPC classification number: H01L29/0657 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  G03F7/0002 ,  H01L21/02118 ,  H01L21/0223 ,  H01L29/06 ,  Y10S438/947 ,  Y10S977/888 ,  Y10S977/895 ,  Y10S977/90 ,  Y10T428/24182 ,  Y10T428/24521 ,  Y10T428/2462 ,  Y10T428/249921

Abstract: Methods for fabricating sublithographic, nanoscale microstructures in line arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Semiconductor structures may include self-assembled block copolymer materials in the form of lines of half-cylinders of a minority block matrix of a majority block of the block copolymer. The lines of half-cylinders may be within trenches in the semiconductor structures.

Abstract translation: 提供了利用自组装嵌段共聚物在线阵列中制备亚光刻，纳米尺度微结构的方法，以及由这些方法形成的膜和器件。 半导体结构可以包括嵌段共聚物的多数嵌段的少数嵌段基体的半圆柱体形式的自组装嵌段共聚物材料。 半圆柱体的线可以在半导体结构的沟槽内。

公开(公告)号：US08961802B2

公开(公告)日：2015-02-24

申请号：US13927464

申请日：2013-06-26

Applicant: Riken ,  Tokyo Ohka Kogyo Co., Ltd.

Inventor： Shigenori Fujikawa ,  Harumi Hayakawa ,  Takahiro Senzaki ,  Ken Miyagi

IPC: B81C1/00 ,  H01L21/033 ,  H01L21/308 ,  H01L21/311

CPC classification number: B81C1/00531 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31133

Abstract: A method of forming a fine pattern, including: a phase separation step in which a layer containing a block copolymer having a plurality of blocks bonded is formed on a substrate, and then the layer is heated for phase separation of the layer; a decomposition step in which at least a portion of a phase of at least one block of the plurality of blocks constituting the block copolymer is decomposed; a selective removal step in which the layer is immersed in a developing solution to selectively remove a phase containing decomposed blocks to form a nano structure; and an etching step in which the substrate is subjected to etching by using the nano structure as a mask; and a main component of the developing solution is an organic solvent having an SP value of 7.5 to 11.5 (cal/cm3)1/2, and having vapor pressure of less than 2.1 kPa at 25° C., or is benzene that may be substituted by an alkyl group, an alkoxy group, or a halogen atom, and the developing solution further contains metal alkoxide.

Abstract translation: 一种形成精细图案的方法，包括：相位分离步骤，其中在基板上形成含有多个键合的嵌段共聚物的层，然后将该层加热以使该层相分离; 分解步骤，其中构成所述嵌段共聚物的多个嵌段的至少一个嵌段的至少一部分相分解; 选择性去除步骤，其中将该层浸入显影溶液中以选择性地除去含有分解嵌段的相以形成纳米结构; 以及通过使用纳米结构作为掩模对基板进行蚀刻的蚀刻步骤; 显影液的主要成分是在25℃下SP值为7.5〜11.5（cal / cm 3）1/2，蒸气压小于2.1kPa的有机溶剂，也可以是苯 被烷基，烷氧基或卤素原子取代，显影液还含有金属醇盐。

公开(公告)号：US20140290858A1

公开(公告)日：2014-10-02

申请号：US14300404

申请日：2014-06-10

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward

IPC: H01L21/02 ,  B05D3/00

CPC classification number: H01L21/02002 ,  B05D3/007 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  H01L21/3086 ,  H01L21/31144

Abstract: Methods for fabricating sub-lithographic, nanoscale microchannels utilizing an aqueous emulsion of an amphiphilic agent and a water-soluble, hydrogel-forming polymer, and films and devices formed from these methods are provided.

Abstract translation: 提供了利用两亲性试剂和水溶性水凝胶形成聚合物的水性乳液制备亚光刻纳米尺寸微通道的方法，以及由这些方法形成的膜和器件。

公开(公告)号：US20140197501A1

公开(公告)日：2014-07-17

申请号：US13743300

申请日：2013-01-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Alfons Dehe

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81C1/00325 ,  B81B3/0072 ,  B81B2201/0257 ,  B81C1/00158 ,  B81C1/00182 ,  B81C2201/013 ,  B81C2201/0159 ,  B81C2201/0198

Abstract: A MEMS device, a method of making a MEMS device and a system of a MEMS device are shown. In one embodiment, a MEMS device includes a first polymer layer, a MEMS substrate disposed on the first polymer layer and a MEMS structure supported by the MEMS substrate. The MEMS device further includes a first opening disposed in the MEMS substrate and a second opening disposed in the first polymer layer.

Abstract translation: 示出了MEMS器件，制造MEMS器件的方法和MEMS器件的系统。 在一个实施例中，MEMS器件包括第一聚合物层，设置在第一聚合物层上的MEMS衬底和由MEMS衬底支撑的MEMS结构。 MEMS器件还包括设置在MEMS衬底中的第一开口和设置在第一聚合物层中的第二开口。

公开(公告)号：US20140107296A1

公开(公告)日：2014-04-17

申请号：US14104304

申请日：2013-12-12

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  Timothy A. Quick

IPC: C08F299/04 ,  C08F299/02

CPC classification number: H01L21/76828 ,  B81C1/00031 ,  B81C2201/013 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  C08F299/02 ,  C08F299/0492 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31133 ,  H01L21/76802 ,  H01L21/76877

Abstract: Methods for fabricating sub-lithographic, nanoscale microstructures utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract translation: 提供了使用自组装嵌段共聚物制备亚光刻，纳米尺度微结构的方法，以及由这些方法形成的膜和器件。

公开(公告)号：US20130248488A1

公开(公告)日：2013-09-26

申请号：US13992604

申请日：2012-03-16

Applicant: Yang-Kyoo Han ,  Je-Gwon Lee ,  Su-Hwa Kim

Inventor： Yang-Kyoo Han ,  Je-Gwon Lee ,  Su-Hwa Kim

IPC: C08F22/38

CPC classification number: C08F22/38 ,  B81C1/00396 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y10/00 ,  B82Y40/00 ,  C08F220/18 ,  C08F220/56 ,  C08F293/005 ,  C08F2438/03 ,  G03F7/0002 ,  H01L21/3065

Abstract: The present invention relates to a diblock copolymer that may facilitate formation of a finer nano pattern, and be used for manufacture of an electronic device including a nano pattern or a bio sensor, and the like, a method for preparing the same, and a method for forming a nano pattern using the same,The diblock copolymer comprises a hard segment including at least one specific acrylamide-based repeat unit, and a soft segment including at least one (meth)acrylate-based repeat unit.

Abstract translation: 本发明涉及二嵌段共聚物，其可以促进更细的纳米图案的形成，并且用于制造包括纳米图案或生物传感器的电子器件等，其制备方法和方法 用于形成使用其的纳米图案。二嵌段共聚物包括包含至少一种特定的基于丙烯酰胺的重复单元的硬链段和包含至少一种（甲基）丙烯酸酯的重复单元的软链段。

公开(公告)号：US08543352B2

公开(公告)日：2013-09-24

申请号：US12600527

申请日：2008-04-02

Applicant: Yuki Aritsuka ,  Morihisa Hoga

Inventor： Yuki Aritsuka ,  Morihisa Hoga

IPC: G01B3/46 ,  G01B3/04 ,  G01B3/20 ,  H04B17/00

CPC classification number: G01B21/20 ,  B81C99/0065 ,  B81C2201/0153 ,  B81C2201/0198 ,  G03F1/84

Abstract: A system for measuring a shape, includes an external storage unit storing tolerances of first and second shape factors defining a design shape of a measuring object; a first measuring tool measuring the first shape factor of the measuring object to obtain measurement data; and a measurement processing unit determining a shape of the measuring object. The measurement processing unit includes; a comparison module comparing the measurement data of the first shape factor with the tolerance of the first shape factor; a verification module composing a predicted shape using the measurement data and verifying whether the predicted shape is formed as a figure; a calculation module calculating predicted data of the second shape factor from the predicted shape; and a determination module determining a measurement shape by comparing the predicted data with the tolerance of the second shape factor.

Abstract translation: 一种用于测量形状的系统，包括存储限定测量对象的设计形状的第一和第二形状因子的公差的外部存储单元; 第一测量工具，测量测量对象的第一形状因子以获得测量数据; 以及测量处理单元，确定测量对象的形状。 测量处理单元包括： 将所述第一形状因子的测量数据与所述第一形状系数的公差进行比较的比较模块; 使用所述测量数据构成预测形状的验证模块，并验证所述预测形状是否形成为图形; 计算模块，根据所述预测形状计算所述第二形状因子的预测数据; 以及确定模块，通过将预测数据与第二形状因子的公差进行比较来确定测量形状。

公开(公告)号：US08512846B2

公开(公告)日：2013-08-20

申请号：US13470503

申请日：2012-05-14

Applicant: Dan B. Millward

Inventor： Dan B. Millward

IPC: B32B5/12

CPC classification number: B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  H01L21/67103 ,  H05B3/145 ,  H05B3/24 ,  Y10T29/49083 ,  Y10T428/24058 ,  Y10T428/24124 ,  Y10T428/24174 ,  Y10T428/24182

Abstract: Methods for fabricating sublithographic, nanoscale microstructures in two-dimensional square and rectangular arrays utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract translation: 提供了利用自组装嵌段共聚物制造二维正方形和矩形阵列中的亚光刻纳米尺度微结构的方法，以及由这些方法形成的薄膜和器件。