公开(公告)号：US06541168B2

公开(公告)日：2003-04-01

申请号：US09841517

申请日：2001-04-24

Applicant: John T. Brown ,  Stephen C. Currie ,  Lisa A. Moore ,  Susan L. Schiefelbein ,  Robert S. Pavlik, Jr.

Inventor： John T. Brown ,  Stephen C. Currie ,  Lisa A. Moore ,  Susan L. Schiefelbein ,  Robert S. Pavlik, Jr.

IPC: G03F900

CPC classification number: G03F7/70216 ,  C03B19/1407 ,  C03B19/1415 ,  C03B19/1423 ,  C03B19/1453 ,  C03B37/01202 ,  C03B37/01406 ,  C03B37/01413 ,  C03B37/0142 ,  C03B37/0146 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/12 ,  C03B2201/20 ,  C03B2201/21 ,  C03B2207/06 ,  C03B2207/14 ,  C03B2207/20 ,  C03B2207/30 ,  C03B2207/32 ,  C03B2207/36 ,  C03B2207/38 ,  C03B2207/40 ,  C03B2207/46 ,  C03B2207/54 ,  C03C3/06 ,  C03C4/0085 ,  C03C2201/12 ,  C03C2201/20 ,  C03C2201/21 ,  C03C2201/23 ,  C03C2201/30 ,  C03C2201/32 ,  C03C2203/54 ,  G03F1/60 ,  G03F7/70958 ,  Y02P40/57

Abstract: High purity direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive direct deposit vitrified silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a dry direct deposit vitrified silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.

公开(公告)号：US20030021015A1

公开(公告)日：2003-01-30

申请号：US10238099

申请日：2002-09-09

Inventor： Robert L. Maier ,  Lisa A. Moore ,  Charlene M. Smith

IPC: G02B001/00

CPC classification number: C03C17/02 ,  C03B19/1453 ,  C03B19/1461 ,  C03B2201/075 ,  C03B2201/12 ,  C03C3/06 ,  C03C17/3452 ,  C03C2201/12 ,  C03C2201/23 ,  C03C2203/46 ,  G02B1/105 ,  G02B1/14 ,  G02B5/208 ,  G03F7/70958

Abstract: The invention provides coated optical lithography elements and methods of coating optical elements, and particularly optical photolithography elements for use in below 240 nm optical photolithography systems utilizing vacuum ultraviolet light (VUV) lithography wavelengths no greater than about 193 nm, such as VUV projection lithography systems utilizing wavelengths in the 193 nm or 157 nm region. The optical devices manipulate vacuum ultraviolet lithography light less than 250 nm utilizing a deposited silicon oxyfluoride film. The deposited silicon oxyfluoride optical coating assists in the manipulation of incident light and protects the underlying optical materials, layers, and surfaces.

公开(公告)号：US06499317B1

公开(公告)日：2002-12-31

申请号：US09581263

申请日：2000-10-17

Applicant: Yoshiaki Ikuta ,  Shinya Kikugawa ,  Noriaki Shimodaira ,  Akio Masui ,  Shuhei Yoshizawa

Inventor： Yoshiaki Ikuta ,  Shinya Kikugawa ,  Noriaki Shimodaira ,  Akio Masui ,  Shuhei Yoshizawa

IPC: G01N2300

CPC classification number: C03C3/06 ,  C03B19/1453 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/12 ,  C03B2201/21 ,  C03B2201/23 ,  C03C23/002 ,  C03C2201/11 ,  C03C2201/12 ,  C03C2201/23 ,  C03C2203/44 ,  C03C2203/54 ,  Y02P40/57 ,  Y10S65/16 ,  Y10S501/90 ,  Y10S501/905

Abstract: A synthetic quartz glass for optical use, to be used by irradiation with light within a range of from the ultraviolet region to the vacuum ultraviolet region, which contains fluorine, which has a ratio of the scattering peak intensity of 2250 cm−1 (I2250) to the scattering peak intensity of 800 cm−1 (I800), i.e. I2250/I800, of at most 1×10−4 in the laser Raman spectrum, and which has an absorption coefficient of light of 245 nm of at most 2×10−3 cm−1.

Abstract translation: 一种用于光学用的合成石英玻璃，其用于通过在从含有氟的紫外线区域到真空紫外线区域的光的照射下使用，其具有2250cm -1（I2250）的散射峰强度比， 对于激光拉曼光谱中至多为1×10 -4的800cm -1（I800）的散射峰强度（I800），即I2250 / I800，其吸光系数为245nm，最多为2×10 -3 cm -3， 1。

公开(公告)号：US20020194869A1

公开(公告)日：2002-12-26

申请号：US10045238

申请日：2001-10-23

Inventor： Nicholas F. Borrelli ,  Daniel R. Sempolinski ,  Thomas P. Seward ,  Charlene M. Smith

IPC: C03B019/06

CPC classification number: C03B19/1453 ,  C03B32/00 ,  C03B2201/075 ,  C03B2201/21 ,  C03B2201/22 ,  C03B2207/32 ,  C03C21/007 ,  Y10S65/90

Abstract: The invention relates to optical glass having improved initial transmittance, formed by subjecting the glass to a hydrogen and/or deuterium treatment at a temperature, and for a duration of time sufficient to diffuse the hydrogen and/or deuterium into the glass.

Abstract translation: 本发明涉及具有改进的初始透射率的光学玻璃，其通过使玻璃在一定温度下持续氢气和/或氘处理而形成，并且持续时间足以将氢和/或氘扩散到玻璃中。

公开(公告)号：US06473227B1

公开(公告)日：2002-10-29

申请号：US09721863

申请日：2000-11-24

Applicant: Shigeru Yamagata

Inventor： Shigeru Yamagata

IPC: G02B520

CPC classification number: C03C3/06 ,  C03B19/1453 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/12 ,  C03B2201/21 ,  C03C4/0085 ,  C03C2201/12 ,  C03C2201/21 ,  C03C2201/23

Abstract: A silica glass optical material for projection lens to be used in vacuum ultraviolet radiation lithography using radiation from 155 to 195 nm in wavelength, wherein, said silica glass optical material is of ultrahigh purity, contains from 1 to 10 wtppm of OH groups, from 100 to 10,000 wtppm of F, and from 1×1017 to 1×1019 molecules/cm3 of H2, and has a distribution in concentration of F that is axially symmetrical to the central axis.

Abstract translation: 一种用于投影透镜的石英玻璃光学材料，用于使用波长为155至195nm的辐射的真空紫外线辐射光刻，其中所述石英玻璃光学材料具有超高纯度，含有1-10重量ppm的OH基，100 至10,000重量ppm的F和1×10 17至1×10 19分子/ cm 3的H 2，并且具有与中心轴轴对称的F的浓度分布。

公开(公告)号：US20020151425A1

公开(公告)日：2002-10-17

申请号：US10048309

申请日：2002-01-29

Inventor： Akira Fujinoki ,  Hiroyuki Nishimura ,  Toru Yokota ,  Yasuyuki Yaginuma ,  Akira Sato ,  Tetsuji Ueda

IPC: C03C003/06 ,  C03C003/112

CPC classification number: C03B19/1453 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/12 ,  C03B2201/21 ,  C03B2207/32 ,  C03C3/06 ,  C03C4/0085 ,  C03C2201/12 ,  C03C2201/21 ,  C03C2203/54 ,  Y02P40/57

Abstract: An object of the present invention is to provide a synthetic quartz glass optical material having a high optical transmittance for a radiation 157 nm in wavelength emitted from F2 excimer laser and a high resistance against irradiation of a F2 excimer laser radiation, yet having a uniformity suitable for such a fine patterning using a F2 excimer laser, and to provide an optical member using the same. The problems above are solved by a synthetic quartz glass optical material for F2 excimer lasers having an OH group concentration of 0.5 ppm or lower, a fluorine concentration of 0.1 to 2 mol %, a hydrogen molecule concentration of 5null1016 molecules/cm3 or lower, a difference between the maximum and minimum fluorine concentrations within 20 mol ppm, and a difference between the maximum and minimum refraction indices of 2null10null5 or lower.

Abstract translation: 本发明的目的是提供一种合成石英玻璃光学材料，其对于从F2准分子激光器发射的波长为157nm的辐射具有高的透光率，并且具有高的对F2准分子激光辐射照射的抗性，但具有适合的均匀性 对于使用F2准分子激光器的精细图案化，并提供使用其的光学部件。 上述问题通过具有OH基浓度为0.5ppm以下，氟浓度为0.1〜2mol％，氢分子浓度为5×1016分/ cm 3以下的F2准分子激光的合成石英玻璃光学材料来解决，a 最大和最小氟浓度在20 mol ppm内的差异，以及最大和最小折射率之间的差异为2×10-5或更低。

公开(公告)号：US20020077244A1

公开(公告)日：2002-06-20

申请号：US09967841

申请日：2001-09-27

Inventor： Nicholas F. Borrelli ,  Charlene M. Smith ,  Johannes Moll

IPC: C03C003/06

CPC classification number: G03F7/70041 ,  C03B19/1423 ,  C03B19/1453 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/21 ,  C03B2201/23 ,  C03B2207/36 ,  C03C3/06 ,  C03C4/0085 ,  C03C23/002 ,  C03C2201/21 ,  C03C2201/23 ,  G03F7/70058 ,  G03F7/70941 ,  G03F7/70958 ,  G03F7/70966

Abstract: Lithographic methods are disclosed. In one such method, a pulsed ultraviolet radiation source for producing ultraviolet lithography radiation having a wavelength shorter than about 300 nm at a fluence of less than 10 mJ/cm2/pulse and a high purity fused silica lithography glass having a concentration of molecular hydrogen of between about 0.02null1018 molecules/cm3 and about 0.18null1018 molecules/cm3 are provided. A lithography pattern is formed with the ultraviolet lithography radiation; the lithography pattern is reduced to produce a reduced lithography pattern; and the reduced lithography pattern is projected onto a ultraviolet radiation sensitive lithography medium to form a printed lithography pattern. At least one of the forming, reducing, and projecting steps includes transmitting the ultraviolet lithography radiation through the high purity fused silica lithography glass. Lithography systems and high purity fused silica lithography glass are also described.

Abstract translation: 公开了平版印刷方法。 在一种这样的方法中，用于产生波长短于约300nm的波长小于10mJ / cm 2 /脉冲的紫外光刻辐射的脉冲紫外辐射源和具有分子氢浓度的高纯度熔融石英光刻玻璃 提供约0.02×10 18分子/ cm 3和约0.18×10 18分子/ cm 3。 用紫外光刻法形成光刻图案; 光刻图案被减少以产生减小的光刻图案; 并且将还原的光刻图案投影到紫外线照射敏感光刻介质上以形成印刷光刻图案。 形成，还原和突出步骤中的至少一个步骤包括通过高纯度熔融石英光刻玻璃传输紫外光刻辐射。 还描述了平版印刷系统和高纯度熔融石英光刻玻璃。

公开(公告)号：US20020039477A1

公开(公告)日：2002-04-04

申请号：US09925678

申请日：2001-08-09

Applicant: Mitsubishi Cable Industries, Ltd.

Inventor： Hiroyuki Hayami ,  Terunobu Iio ,  Toshikazu Gozen ,  Hirokazu Kuzushita ,  Michitsugu Mori ,  Takashi Okamura ,  Shuichi Ohmori

IPC: G02B006/16

CPC classification number: C03C3/06 ,  C03B37/01413 ,  C03B37/01426 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/12 ,  C03B2201/20 ,  C03B2201/23 ,  C03B2207/30 ,  C03B2207/32 ,  C03C13/045 ,  C03C2201/12 ,  C03C2201/23 ,  C03C2201/26 ,  G02B6/06

Abstract: A silica optical fiber is provided, which contains a pure-silica core and a cladding layer formed on the pure-silica core, wherein the pure-silica core contains a C element and has a content of elements belonging to the third period-the seventh period of the periodic table, except Si element that constitutes the quartz structure, of not more than 100 ppm. The present invention can provide a silica optical fiber superior in the resistance to high energy electromagnetic waves such as UV light and null-rays.

Abstract translation: 提供一种二氧化硅光纤，其包含形成在纯二氧化硅芯上的纯二氧化硅芯和包层，其中纯二氧化硅芯包含C元素，并且具有属于第三周期的元素含量 - 第七 周期表的周期，除了构成石英结构的Si元素之外，不大于100ppm。 本发明可以提供对诸如UV光和γ射线的高能电磁波的耐受性优异的二氧化硅光纤。

公开(公告)号：US06360564B1

公开(公告)日：2002-03-26

申请号：US09488300

申请日：2000-01-20

Applicant: Lauren K. Cornelius ,  Adam J. G. Ellison ,  Ljerka Ukrainczyk

Inventor： Lauren K. Cornelius ,  Adam J. G. Ellison ,  Ljerka Ukrainczyk

IPC: C03B802

CPC classification number: C03B37/016 ,  C03B19/1065 ,  C03B19/12 ,  C03B37/01297 ,  C03B37/01838 ,  C03B2201/075 ,  C03B2201/12 ,  C03B2201/30 ,  C03B2201/34 ,  C03B2201/36 ,  C03C1/006 ,  C03C1/026 ,  C03C3/06 ,  C03C2201/06 ,  C03C2201/12 ,  C03C2201/34 ,  C03C2201/3476 ,  C03C2203/26 ,  Y10S65/901

Abstract: A sol-gel method of preparing a powder for use in forming a glass is provided, along with methods of preparing glasses and glass fibers from the powder. The inventive method allows for the incorporation of a wide range of elements and compositions into a homogeneous glass or glass fiber that is substantially free of hydroxide groups. In addition, dopants incorporated into glasses prepared by the inventive method are uniformly distributed throughout the glass structure.

Abstract translation: 提供了制备用于形成玻璃的粉末的溶胶 - 凝胶法，以及从粉末制备玻璃和玻璃纤维的方法。 本发明的方法允许将宽范围的元素和组合物并入基本上不含氢氧化物基团的均匀玻璃或玻璃纤维中。 此外，掺入通过本发明方法制备的玻璃中的掺杂剂均匀分布在整个玻璃结构中。

公开(公告)号：US20020004173A1

公开(公告)日：2002-01-10

申请号：US09935990

申请日：2001-08-23

Inventor： George Edward Berkey ,  Lisa Anne Moore ,  Michelle Diane Pierson

IPC: C03C004/08 ,  G02B009/00 ,  G02B003/00 ,  B32B017/06 ,  G02B013/14 ,  G02B001/00 ,  G03C005/00 ,  G03F009/00 ,  C03C015/00 ,  G03G016/00 ,  C03C003/112

CPC classification number: C03C4/0085 ,  C03B19/1453 ,  C03B19/1469 ,  C03B23/043 ,  C03B23/045 ,  C03B23/051 ,  C03B23/07 ,  C03B2201/07 ,  C03B2201/075 ,  C03B2201/12 ,  C03B2201/21 ,  C03C3/06 ,  C03C2201/12 ,  C03C2203/50 ,  G03F1/60

Abstract: The present invention is a method of making a lithography photomask and photomask blank. The method of making the lithography photomask and photomask blank includes providing a silicon oxyfluoride glass tube having an OH content less than 50 ppm. The method further includes cutting the silicon oxyfluoride glass tube, flattening the silicon oxyfluoride glass tube, and forming the flattened cut silicon oxyfluoride glass tube into a photomask blank having a planar surface. The present invention includes a glass lithography mask preform. The glass lithography mask preform is a longitudinal silicon oxyfluoride glass tube that has an OH content null10 ppm, a F wt. % concentration null0.5 wt. %.

Abstract translation: 本发明是制造光刻光掩模和光掩模坯料的方法。 制造光刻光掩模和光掩模坯料的方法包括提供OH含量低于50ppm的氟氧化硅玻璃管。 该方法还包括切割氟氧化硅玻璃管，使氟氧化硅玻璃管扁平化，并将扁平切割的氟氧化硅玻璃管形成具有平坦表面的光掩模坯料。 本发明包括玻璃光刻掩模预制件。 玻璃光刻掩模预制件是具有OH含量<= 10ppm的纵向硅氧氟化物玻璃管，F wt。 ％浓度> = 0.5wt。 ％。