公开(公告)号：US20170092466A1

公开(公告)日：2017-03-30

申请号：US15378914

申请日：2016-12-14

Applicant: BEIJING NMC CO., LTD.

Inventor： Qiaoli SONG ,  Jianhui NAN

IPC: H01J37/32 ,  H01F27/28 ,  H01F38/14

CPC classification number: H01J37/3211 ,  H01F27/28 ,  H01F38/10 ,  H01F38/14 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/32183 ,  H01J2237/3344

Abstract: The present invention discloses an inductively coupled coil and an inductively coupled plasma device using the same. The inductively coupled coil comprises an internal coil and an exterior coil which are respective from each other and coaxially arranged, internal coil comprising a plurality of internal respective branches having the same configurations which are nested together, the plurality of internal respective branches being arranged symmetrically with respect to an axis of the inductively coupled coil; the to external coil comprising a plurality of external respective branches having the same configurations which are nested together, the plurality of external respective branches being arranged symmetrically with respect to the axis of the inductively coupled coil. The inductively coupled coil is located on the reaction chamber of the inductively coupled plasma device and is connected to a RF source. It can make the plasma distribute uniformly on the wafer in the reaction chamber so that the difference in chemical reaction rate on the surface of the wafer is small and the quality of the etched wafer is improved. They can be applied in a semiconductor wafer manufacturing apparatus, and they can also be adapted to other apparatuses.

公开(公告)号：US20150091441A1

公开(公告)日：2015-04-02

申请号：US14043574

申请日：2013-10-01

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Ken Lucchesi ,  Luc Albarede

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32174 ,  H01J37/32449 ,  H01J37/32532 ,  H01J2237/3323 ,  H01J2237/3344

Abstract: A plasma system includes an RF generator and a matchbox including an impedance matching circuit, which is coupled to the RF generator via an RF cable. The plasma system includes a chuck and a plasma reactor coupled to the matchbox via an RF line. The RF line forms a portion of an RF supply path, which extends between the RF generator through the matchbox, and to the chuck. The plasma system further includes a phase adjusting circuit coupled to the RF supply path between the impedance matching circuit and the chuck. The phase adjusting circuit has an end coupled to the RF supply path and another end that is grounded. The plasma system includes a controller coupled to the phase adjusting circuit. The controller is used for changing a parameter of the phase adjusting circuit to control an impedance of the RF supply path based on a tune recipe.

Abstract translation: 等离子体系统包括RF发生器和包括阻抗匹配电路的火柴盒，其通过RF电缆耦合到RF发生器。 等离子体系统包括通过RF线耦合到火柴盒的卡盘和等离子体反应器。 RF线形成RF供应路径的一部分，RF供应路径在RF发生器之间通过火柴盒和卡盘延伸。 等离子体系统还包括耦合到阻抗匹配电路和卡盘之间的RF供给路径的相位调整电路。 相位调整电路具有耦合到RF供给路径的一端和接地的另一端。 等离子体系统包括耦合到相位调整电路的控制器。 控制器用于改变相位调整电路的参数，以基于调谐配方控制RF供应路径的阻抗。

公开(公告)号：US20140335698A1

公开(公告)日：2014-11-13

申请号：US13888754

申请日：2013-05-07

Applicant: LAM RESEARCH CORPORATION

Inventor： Harmeet Singh ,  Thorsten Lill

IPC: H01J37/32 ,  H01L21/48 ,  H01L21/02

CPC classification number: H01J37/32495 ,  C23C16/4404 ,  H01J37/32477 ,  H01J37/32715 ,  H01J37/32724 ,  H01J2237/0203 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/3344 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/6715 ,  H01L21/68735

Abstract: A component of a plasma processing chamber having a protective liquid layer on a plasma exposed surface of the component. The protective liquid layer can be replenished by supplying a liquid to a liquid channel and delivering the liquid through liquid feed passages in the component. The component can be an edge ring which surrounds a semiconductor substrate supported on a substrate support in a plasma processing apparatus wherein plasma is generated and used to process the semiconductor substrate. Alternatively, the protective liquid layer can be cured or cooled sufficiently to form a solid protective layer.

Abstract translation: 等离子体处理室的组件，其在组件的等离子体暴露表面上具有保护液层。 可以通过向液体通道供应液体并通过液体供给通道将液体输送到部件中来补充保护液体层。 该组件可以是围绕在等离子体处理装置中的支撑在基板支撑件上的半导体衬底的边缘环，其中产生等离子体并用于处理半导体衬底。 或者，可以将保护液层充分固化或冷却以形成固体保护层。

公开(公告)号：US08858816B2

公开(公告)日：2014-10-14

申请号：US14055121

申请日：2013-10-16

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Ludovic Godet ,  Timothy Miller ,  George Papasouliotis ,  Vikram Singh

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01J37/32 ,  C23C16/50 ,  C23C16/04

CPC classification number: B44C1/227 ,  C23C16/045 ,  C23C16/50 ,  H01J37/32412 ,  H01J37/32623 ,  H01J2237/3344 ,  H01J2237/3345

Abstract: A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition of material is disclosed. In this embodiment, the plasma sheath shape is modified to allow material to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of different features can be deposited onto. In another embodiment, a plasma processing tool is used to etch a workpiece. In this embodiment, the plasma sheath shape is altered to allow ions to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of differently shaped features can be created.

Abstract translation: 使用等离子体处理工具将材料沉积在工件上。 例如，公开了一种用于材料的共形沉积的方法。 在该实施例中，等离子体护套形状被修改以允许材料在入射角的范围内冲击工件。 通过随时间改变入射角的这个范围，可以沉积各种不同的特征。 在另一个实施例中，使用等离子体处理工具来蚀刻工件。 在该实施例中，等离子体鞘形状被改变以允许离子在入射角的范围内冲击工件。 通过随时间改变入射角的这个范围，可以产生各种不同形状的特征。

公开(公告)号：US08137471B2

公开(公告)日：2012-03-20

申请号：US12696323

申请日：2010-01-29

Applicant: Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa

Inventor： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa

IPC: C23C16/00

CPC classification number: H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32348 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32706 ,  H01J37/32834 ,  H01J2237/3344 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

Abstract: An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.

Abstract translation: 一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。 被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。 配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。 可变直流电源连接到上电极。 将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。

公开(公告)号：US20100252531A1

公开(公告)日：2010-10-07

申请号：US12645638

申请日：2009-12-23

Applicant: Ludovic Godet ,  Timothy Miller ,  George Papasouliotis ,  Vikram Singh

Inventor： Ludovic Godet ,  Timothy Miller ,  George Papasouliotis ,  Vikram Singh

IPC: B44C1/22 ,  C23C16/513

CPC classification number: B44C1/227 ,  C23C16/045 ,  C23C16/50 ,  H01J37/32412 ,  H01J37/32623 ,  H01J2237/3344 ,  H01J2237/3345

Abstract: A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition of material is disclosed. In this embodiment, the plasma sheath shape is modified to allow material to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of different features can be deposited onto. In another embodiment, a plasma processing tool is used to etch a workpiece. In this embodiment, the plasma sheath shape is altered to allow ions to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of differently shaped features can be created.

Abstract translation: 使用等离子体处理工具将材料沉积在工件上。 例如，公开了一种用于材料的共形沉积的方法。 在该实施例中，等离子体护套形状被修改以允许材料在入射角的范围内冲击工件。 通过随时间改变入射角的这个范围，可以沉积各种不同的特征。 在另一个实施例中，使用等离子体处理工具来蚀刻工件。 在该实施例中，等离子体鞘形状被改变以允许离子在入射角的范围内冲击工件。 通过随时间改变入射角的这个范围，可以产生各种不同形状的特征。

公开(公告)号：US20030070620A1

公开(公告)日：2003-04-17

申请号：US10024208

申请日：2001-12-21

Inventor： David J. Cooperberg ,  Vahid Vahedi ,  Douglas Ratto ,  Harmeet Singh ,  Neil Benjamin

IPC: C23F001/00 ,  C23C016/00

CPC classification number: H01J37/32449 ,  C23C16/45574 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/3323 ,  H01J2237/3344 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137

Abstract: A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas injector fixed to part of or removably mounted in an opening in the dielectric window, the gas injector including a plurality of gas outlets supplying process gas at adjustable flow rates to multiple zones of the chamber, and an RF energy source such as a planar or non-planar spiral coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.

Abstract translation: 一种用于等离子体处理系统的可调多区域注入系统，用于诸如半导体晶片的衬底的等离子体处理。 该系统包括等离子体处理室，用于在处理室内支撑衬底的衬底支撑件，具有面向衬底支撑件的内表面的电介质构件，形成处理室壁的电介质构件，固定到 或可移除地安装在电介质窗口的开口中，气体注射器包括多个气体出口，其以可调节的流速向腔室的多个区域供应处理气体，以及RF能量源，例如平面或非平面螺旋线圈，其中 将RF能量感应耦合通过电介质构件并进入腔室，以将处理气体激励成等离子体状态。 喷射器可以包括轴向出口，其以第一流量向中心区域供应处理气体，并且离轴出口以相同的处理气体以第二流量供应到围绕中心区域的环形区域。 该装置允许气体输送的修改以通过允许独立调节气体流到腔室中的多个区域来满足特定处理状态的需要。 此外，与消耗式喷头装置相比，可以更容易且经济地更换可移除安装的气体喷射器。

公开(公告)号：US5306379A

公开(公告)日：1994-04-26

申请号：US937673

申请日：1992-09-01

Applicant: Yukihiro Kamide

Inventor： Yukihiro Kamide

IPC: C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/00

CPC classification number: H01J37/32623 ,  H01J37/3266 ,  H01J37/32678 ,  H01J2237/3344

Abstract: A rectangular substrate dry etching apparatus which etches a rectangular substrate of a large size with a high degree of accuracy. The dry etching apparatus comprises an etching chamber in which a rectangular substrate to be etched is held in position in the etching chamber, and a plasma generator disposed in the etching chamber for generating a pair of high density plasma bars on the outer sides of and substantially in parallel to a pair of opposing sides of the rectangular substrate in the etching chamber so as to etch the rectangular substrate with diffusion components of the high density plasma bars.

Abstract translation: 矩形基板干蚀刻装置，以高精度蚀刻大尺寸矩形基板。 干蚀刻装置包括蚀刻室，其中待刻蚀的矩形基板保持在蚀刻室中的适当位置;以及等离子体发生器，其设置在蚀刻室中，用于在外部产生一对高密度等离子体棒，并且基本上 平行于蚀刻室中的矩形基板的一对相对侧，以便用高密度等离子体棒的扩散部分蚀刻矩形基板。

公开(公告)号：US12106945B2

公开(公告)日：2024-10-01

申请号：US17528321

申请日：2021-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Siqing Lu ,  Cheonkyu Lee ,  Takafumi Noguchi

IPC: H01J37/32 ,  C23C14/54 ,  C23C16/458 ,  C23C16/46 ,  H01L21/67

CPC classification number: H01J37/32724 ,  C23C14/541 ,  C23C16/4586 ,  C23C16/463 ,  H01L21/67248 ,  H01J2237/2065 ,  H01J2237/3344

Abstract: A plasma processing apparatus includes a process chamber, a substrate support chuck configured to support a substrate in the process chamber, the substrate support chuck including an upper cooling channel and a lower cooling channel that are symmetrically separated from each other, and a support chuck temperature controller configured to supply a first coolant to the upper cooling channel and to supply a second coolant to the lower cooling channel.

公开(公告)号：US11676799B2

公开(公告)日：2023-06-13

申请号：US17198043

申请日：2021-03-10

Applicant: Tokyo Electron Limited

Inventor： Koji Yamagishi ,  Hiroshi Ikeda ,  Hiroyuki Kondo

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32577 ,  H01J2237/3344

Abstract: A plasma processing apparatus includes a chamber; a first electrode facing an inside of the chamber; a radio-frequency power supply configured to supply a radio-frequency power to the first electrode; a feeding rod configured to feed the radio-frequency power to a center of a surface of the first electrode opposite to a surface facing the inside of the chamber; a conductive plate provided in parallel to the surface of the first electrode opposite to the surface facing the inside of the chamber, the plate being grounded; and a dielectric plate connecting the first electrode and the conductive plate, and having a shape that is rotationally symmetric with respect to a center of the first electrode.