Abstract:
A crystal material lattice strain evaluation method includes illuminating a sample having a crystal structure with an electron beam in a zone axis direction, and selectively detecting a certain diffracted wave diffracted in a certain direction among a plurality of diffracted waves diffracted by the sample. The method further includes repeating the illuminating step and the selectively detecting step while scanning the sample, and obtaining a strain distribution image in a direction corresponding to the certain diffracted wave from diffraction intensity at each point of the sample.
Abstract:
A method and device for electron diffraction tomography of a crystal sample, which employs scanning of the electron beam over a plurality of discrete locations of the sample, in combination with a beam scanning protocol as the beam converges at every discrete location (42, 43) of the sample (38) to obtain a series of electron diffraction patterns, use of template matching to determine crystal orientations and thickness maps to obtain a common intensity scaling factor.
Abstract:
An SACP method includes directing a beam of charged particles onto an object surface of an object using a particle optical system, and detecting intensities of particles emanating from the object. The method further includes: (a1) adjusting an excitation of the second beam deflector for adjusting an impingement location of the beam on the object surface; (a2) adjusting an excitation of the first beam deflector for adjusting an angle of incidence of the beam on the object surface without changing the impingement location and detecting the intensity; and (a3) repeating the adjusting of the excitation of the first beam deflector for adjusting the angle of incidence without changing the impingement location such that a corresponding intensity is detected for each of at least 100 different angles of incidence at the same impingement location.
Abstract:
A scanning transmission electron microscope for scanning a primary electron beam on a sample, detecting a transmitted electron from the sample by a detector, and forming an image of the transmitted electron. The scanning transmission electron microscope includes an electron-optics system which enables switching back the transmitted electron beam to the optical axis by a predetermined quantity, and a determining unit for determining the quantity based on a displacement of the transmitted electron with respect to the detector caused by the scanning of the primary electron beam.
Abstract:
A method and apparatus for measuring the physical properties of a micro region measures the two-dimensional distribution of stress/strain in real time at high resolution and sensitivity and with a high level of measuring position matching. A sample is scanned and irradiated with a finely focused electron beam (23, 26), and the displacement of position of a diffraction spot (32, 33) is measured by a two-dimensional position-sensitive electron detector (13). The displacement amount is outputted as a voltage value that is then converted into the magnitude of the stress/strain according to the principle of a nano diffraction method, and the magnitude is displayed in synchronism with a sample position signal.
Abstract:
Disclosed is an observation apparatus and method using an electron beam, capable of measuring information regarding a crystal structure in a specimen (such as information regarding stress and strain in the specimen) with high sensitivity and high resolution from an electron beam diffraction image obtained by irradiating the specimen with an electron beam. An observation method according to the invention includes: a step of mounting a specimen on a specimen stage; an enlarged image acquiring step of irradiating a predetermined area in the specimen with an electron beam while scanning the electron beam, and acquiring an enlarged image of a specimen internal structure in the predetermined area in the specimen by using the electron beam passed through the specimen; a diffraction image acquiring step of irradiating a specific portion included in the predetermined area in the specimen with the electron beam and acquiring a diffraction image including information of a crystal structure in the specimen in the specific portion in the specimen, formed by the electron beam diffracted in the specimen; a crystal structure information extracting step of extracting information of the crystal structure in the specimen from the diffracted image acquired in the diffraction image acquiring step; and a superimposing and displaying step of displaying the information of the crystal structure in the specimen extracted in the crystal structure information extracting step so as to be superimposed on the enlarged image acquired in the enlarged image acquiring step. The observation method according to the invention can obtain information of the crystal structure in a specimen with high sensitivity and high resolution.
Abstract:
According to one aspect of the disclosure, a method for detecting a degree of substrate damage in an integrated circuit die is provided. In one example embodiment, the back side of the die is thinned and an examination region is exposed. An electron beam is used to scan the region, and backscattered electrons are detected in response. The detected backscattered electrons are used to provide an electron channeling pattern for the scanned region. The electron channeling pattern is then compared to a reference pattern and used to determine a degree of substrate damage.
Abstract:
A detector for electrons diffracted by a sample irradiated with an electron beam uses a fluorescent screen to output optical signals representing the diffraction pattern formed by the diffracted electrons, and a TV camera to convert these optical signals to electrical signals. A photoelectric converter is used to determine the brightness of each position on the fluorescent screen but its position is controlled such that the converter will not obstruct the view of the fluorescent screen from the TV camera. Coordinate data on the positions at which the measured brightness is greater than a specified standard brightness value may be stored and relied upon in moving the photoelectric converter, or the light-receiving end of an optical fiber connected thereto, relative to the fluorescent screen.
Abstract:
A differential phase contrast scanning transmission electron microscope capable of obtaining a clear differential phase contrast image. This microscope includes a charge-coupled image sensor on which a diffraction image is projected. The region covered by the image sensor is divided into two parts by a straight line. The difference between the amounts of electrons impinging on these two parts is calculated, and the resulting differential signal is supplied to a display unit to display an image of the specimen.
Abstract:
A charged-particle beam device for charged-particle crystallography of a crystalline sample comprises a charged-particle source for generating a charged-particle beam to be radiated onto a sample and a charged-particle-optical system downstream the charged-particle source, which is configured to form in a diffraction mode a substantially parallel charged-particle beam at a predefined sample position and in an imaging mode a focused charged-particle beam having a focus at the predefined sample position. The charged-particle-optical system comprises a charged-particle zoom lens system consisting of a first magnetic lens, a second magnetic lens downstream the first magnetic lens and a third magnetic lens downstream the second magnetic lens, wherein at least the second magnetic lens, preferably each one of the first, the second and the third magnetic lens has a variable focal length. The charged-particle-optical system further comprises a single beam limiting aperture with a fixed aperture diameter arranged at a fixed position between the second magnetic lens and the third magnetic lens for limiting the diameter of the charged-particle beam at the sample position. The charged-particle-optical system is configured such that the diameter of the charged-particle beam at the sample position is in a range between 100 nanometer and 1000 nanometer, in particular between 220 nanometer and 250 nanometer, in the diffraction mode, and in a range between 10 nanometer and 200 nanometer in the imaging mode.