公开(公告)号：US20170213708A1

公开(公告)日：2017-07-27

申请号：US15328818

申请日：2015-08-05

Applicant: GRENZEBACH MASCHINENBAU GMBH

Inventor： Gerd KLEIDETER ,  Thomas KRISCH ,  Joerg FIUKOWSKI ,  Olaf GAWER

IPC: H01J37/32 ,  C23C14/56 ,  C23C14/52 ,  H01J37/34

CPC classification number: H01J37/32834 ,  C23C14/352 ,  C23C14/52 ,  C23C14/562 ,  C23C14/564 ,  C23C14/568 ,  H01J37/32513 ,  H01J37/32761 ,  H01J37/32779 ,  H01J37/32788 ,  H01J37/32816 ,  H01J37/32889 ,  H01J37/32899 ,  H01J37/3405 ,  H01J37/3408

Abstract: Disclosed are an apparatus and a method for saving energy while increasing the conveying speed in vacuum coating plants consisting of a series of sputtering segments (3) and gas separation segments (2) along with a continuous substrate plane (1). Said apparatus has the following features: a) each of the sputtering segments (3) consists of a tank tub (12) inside which a conveying device (11) is located; the flange (6) of the tank is positioned in the immediate vicinity above the substrate plane (1); a cathode bearing block (5), along with targets (8) and gas inlet ducts (10), is located in the tank cover (4) in the immediate vicinity of the substrate together with splash guards (9); b) in the region of the substrate plane (1), the gas separation segments (2) are provided with a tunnel cover (14) that extends along the entire length of the gas separation segment (2); c) sputtering segments (3) and/or gas separation segments (2) are evacuated using one or more vacuum pumps (15), and the air pumped in said process is trapped in an air reservoir (25) having an adjustable volume.

公开(公告)号：US20170194560A1

公开(公告)日：2017-07-06

申请号：US15251595

申请日：2016-08-30

Applicant: Hitachi High-Technologies Corporation

Inventor： Makoto SATAKE ,  Masaki YAMADA ,  Kenetsu YOKOGAWA

IPC: H01L43/12 ,  H01J37/32 ,  H01L27/22 ,  H01L43/08 ,  H01L43/02

CPC classification number: H01L43/12 ,  H01J37/32082 ,  H01J37/32816 ,  H01J2237/334 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

Abstract: The present invention is a manufacturing method for manufacturing a magnetoresistive element, including a first step for oxidizing or reducing a magnetic film constituting the magnetoresistive element and a metal oxidation film constituting the magnetoresistive element, and a second step performed after the first step, wherein in the second step, in a case where the magnetic film constituting the magnetoresistive element and the metal oxidation film constituting the magnetoresistive element are oxidized, the oxidized magnetic film constituting the magnetoresistive element or the oxidized metal oxidation film constituting the magnetoresistive element is selectively reduced, and in a case where the magnetic film constituting the magnetoresistive element and the metal oxidation film constituting the magnetoresistive element are reduced, the reduced magnetic film constituting the magnetoresistive element or the reduced metal oxidation film constituting the magnetoresistive element is selectively oxidized.

公开(公告)号：US09646807B2

公开(公告)日：2017-05-09

申请号：US14456146

申请日：2014-08-11

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky ,  Qiwei Liang

IPC: C23C16/00 ,  B43M3/00 ,  F16L39/00 ,  F16L41/00 ,  F16L45/00 ,  F16L51/00 ,  H01J37/32

CPC classification number: H01J37/32816 ,  H01J37/32513 ,  Y10T428/24479

Abstract: In one embodiment, a surface having a sealing groove formed therein. The sealing groove is configured to accept an elastomeric seal. The sealing groove includes a first portion having a full dovetail profile and at least on a second portion having a half dovetail profile.

公开(公告)号：US09412566B2

公开(公告)日：2016-08-09

申请号：US14381508

申请日：2013-02-27

Applicant: Oxford Instruments Nanotechnology Tools Limited

Inventor： Mark Edward McNie ,  Michael Joseph Cooke ,  Leslie Michael Lea

IPC: H01J37/32 ,  H01L21/3065 ,  C23C16/52 ,  C23C16/50 ,  G05B19/418 ,  H01L21/306 ,  H01L21/66

CPC classification number: H01J37/32926 ,  C23C16/50 ,  C23C16/52 ,  G05B19/418 ,  G05B2219/34198 ,  H01J37/32449 ,  H01J37/32816 ,  H01J37/32834 ,  H01J37/32917 ,  H01J2237/24564 ,  H01J2237/24585 ,  H01J2237/248 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/306 ,  H01L21/30655 ,  H01L22/12 ,  H01L22/26

Abstract: Methods are disclosed for depositing material onto and/or etching material from a substrate in a surface processing tool having a processing chamber, a controller and one or more devices for adjusting the process parameters within the chamber. The method comprises: the controller instructing the one or more devices according to a series of control steps, each control step specifying a defined set of process parameters that the one or more devices are instructed to implement, wherein at least one of the control steps comprises the controller instructing the one or more devices to implement a defined set of constant process parameters for the duration of the step, including at least a chamber pressure and gas flow rate through the chamber, which duration is less than the corresponding gas residence time (Tgr) of the processing chamber for the step.

Abstract translation: 公开了用于在具有处理室，控制器和用于调节室内的工艺参数的一个或多个装置的表面处理工具中从衬底上沉积材料和/或蚀刻材料的方法。 该方法包括：控制器根据一系列控制步骤指示一个或多个设备，每个控制步骤指定一个或多个设备被指示实现的一组定义的过程参数，其中至少一个控制步骤包括 所述控制器指示所述一个或多个设备在所述步骤的持续时间内实现一组定义的恒定过程参数，包括至少通过所述室的腔室压力和气体流速，所述持续时间小于相应的气体停留时间（Tgr ）的步骤处理室。

公开(公告)号：US09396964B2

公开(公告)日：2016-07-19

申请号：US13325757

申请日：2011-12-14

Applicant: Shin Matsuura

Inventor： Shin Matsuura

IPC: B23K9/00 ,  G05D11/00 ,  E03B1/00 ,  H01L21/311 ,  G03F7/42 ,  H01J37/32

CPC classification number: H01L21/31138 ,  G03F7/427 ,  H01J37/32091 ,  H01J37/32816 ,  H01J37/32935

Abstract: A plasma processing apparatus includes: a process chamber which accommodates a substrate to be processed; a lower electrode disposed in the process chamber; an upper electrode including an electrode plate that is detachable and discharges a process gas inside the form of shower into the process chamber; a gas supply unit including a central pipe and a edge pipe for supplying the process gas to the upper electrode; a first high frequency power source which applies high frequency power for plasma generation to the lower electrode; pressure indicators which detect pressures inside gas supply pipes; and a controller which measures a degree of consumption of the electrode plate based on the pressures detected by the pressure indicators and calculates a variation in process rate resulting due to the consumption of the electrode plate to adjust process conditions to resolve the variation in process rate.

Abstract translation: 等离子体处理装置包括：处理室，其容纳待处理的基板; 设置在处理室中的下电极; 上部电极，其包括可拆卸的电极板，并将处于所述淋浴形式的处理气体排出到所述处理室中; 气体供给单元，其包括中心管和用于将处理气体供给到上部电极的边缘管; 向下电极施加用于等离子体产生的高频电力的第一高频电源; 检测供气管内压力的压力指示器; 以及控制器，其基于由压力指示器检测到的压力来测量电极板的消耗程度，并且计算由于电极板的消耗而导致的处理速率的变化，以调整处理条件以解决处理速率的变化。

公开(公告)号：US20160126066A1

公开(公告)日：2016-05-05

申请号：US14931919

申请日：2015-11-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YOSHIKAWA

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32192 ,  H01J37/32816

Abstract: A plasma processing apparatus includes a processing container that defines a processing space, a gas supply unit provided on a sidewall of the processing container and configured to supply gas to the processing space, a dielectric member having a facing surface that faces the processing space, and an antenna provided on a surface opposite to the facing surface of the dielectric member and configured to radiate microwaves that turn the gas into plasma to the processing space through the dielectric member. The gas supply unit includes a transport hole transporting the gas to a position where the gas does not reach the processing space in the inside of the sidewall of the processing container and an injection hole communicated to the transport hole and configured to inject the gas transported to the position into the processing space. The injection hole has a diameter larger than that of the transport hole.

Abstract translation: 等离子体处理装置包括限定处理空间的处理容器，设置在处理容器的侧壁上并构造成向处理空间供给气体的气体供给单元，具有面向处理空间的面对面的电介质部件，以及 设置在与所述电介质构件的相对表面相对的表面上的天线，并且被配置为辐射微波，所述微波通过所述电介质构件将所述气体转化为等离子体到所述处理空间。 气体供给单元包括将气体输送到处理容器的侧壁内的气体未到达处理空间的位置的输送孔和与输送孔连通的喷射孔，并配置为将输送到 进入处理空间的位置。 注射孔的直径大于输送孔的直径。

公开(公告)号：US09330927B2

公开(公告)日：2016-05-03

申请号：US14012802

申请日：2013-08-28

Applicant: Lam Research Corporation

Inventor： Rajinder Dhindsa ,  Harmeet Singh ,  Sang Ki Nam

IPC: H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32816 ,  H01L21/3065

Abstract: A plasma processing system and method includes a processing chamber, and a plasma processing volume included therein. The plasma processing volume having a volume less than the processing chamber. The plasma processing volume being defined by a top electrode, a substrate support surface opposing the surface of the top electrode and a plasma confinement structure including at least one outlet port. A conductance control structure is movably disposed proximate to the at least one outlet port and capable of restricting an outlet flow through the at least one outlet port to a first flow rate and capable of increasing the outlet flow through the at least one outlet port to a second flow rate, wherein the conductance control structure restricts the outlet flow rate moves between the first flow rate and the second flow rate corresponding to a selected processing state set by the controller during a plasma process.

Abstract translation: 等离子体处理系统和方法包括处理室和其中包括的等离子体处理体积。 等离子体处理体积的体积小于处理室。 等离子体处理体积由顶部电极，与顶部电极的表面相对的衬底支撑表面和包括至少一个出口的等离子体限制结构限定。 电导控制结构可移动地设置在靠近所述至少一个出口端口并且能够限制通过所述至少一个出口端口的出口流到第一流量并且能够将通过所述至少一个出口端口的出口流增加到 第二流量，其中电导控制结构限制出口流量在等离子体处理期间由与控制器设定的选定处理状态对应的第一流量与第二流量之间移动。

公开(公告)号：US09267605B2

公开(公告)日：2016-02-23

申请号：US13290657

申请日：2011-11-07

Applicant: Mirzafer Abatchev ,  Camelia Rusu ,  Brian McMillin

Inventor： Mirzafer Abatchev ,  Camelia Rusu ,  Brian McMillin

IPC: C23C16/00 ,  F16K3/02 ,  H01L21/3065 ,  H01J37/32

CPC classification number: F16K3/0209 ,  H01J37/32816 ,  H01J37/32834 ,  H01L21/30655 ,  Y10T137/7837

Abstract: A pressure control valve assembly of a plasma processing chamber in which semiconductor substrates are processed includes a housing having an inlet, an outlet and a conduit extending between the inlet and the outlet, the inlet adapted to be connected to an interior of the plasma processing chamber and the outlet adapted to be connected to a vacuum pump which maintains the plasma processing chamber at desired pressure set points during rapid alternating phases of processing a semiconductor substrate in the chamber. A fixed slotted valve plate having a first set of parallel slots therein is fixed in the conduit such that gasses withdrawn from the chamber into the conduit pass through the first set of parallel slots. A movable slotted valve plate having a second set of parallel slots therein is movable with respect to the fixed slotted valve plate so as to adjust pressure in the chamber.

Abstract translation: 其中处理半导体衬底的等离子体处理室的压力控制阀组件包括具有入口，出口和在入口和出口之间延伸的导管的壳体，入口适于连接到等离子体处理室的内部 并且所述出口适于连接到真空泵，所述真空泵在处理所述室中的半导体衬底的快速交替阶段期间将所述等离子体处理室维持在期望的压力设定点。 在其中具有第一组平行槽的固定开槽阀板固定在管道中，使得从腔室排出到管道中的气体通过第一组平行槽。 其中具有第二组平行槽的可移动开槽阀板可相对于固定开槽阀板移动，以调节腔室中的压力。

公开(公告)号：US20160033977A1

公开(公告)日：2016-02-04

申请号：US14880088

申请日：2015-10-09

Applicant: Lam Research Corporation

Inventor： Daniel A. Brown ,  Michael C. Kellogg ,  Leonard J. Sharpless ,  Allan K. Ronne ,  James E. Tappan

IPC: G05D27/02 ,  G05D9/12 ,  G05D7/06

CPC classification number: H01J37/32449 ,  H01J37/32513 ,  H01J37/32816 ,  H01J37/32834

Abstract: A plasma processing device may include a plasma processing chamber, a plasma electrode assembly, a wafer stage, a plasma producing gas inlet, a plurality of vacuum ports, at least one vacuum pump, and a multi-port valve assembly. The multi-port valve assembly may comprise a movable seal plate positioned in the plasma processing chamber. The movable seal plate may comprise a transverse port sealing surface that is shaped and sized to completely overlap the plurality of vacuum ports in a closed state, to partially overlap the plurality of vacuum ports in a partially open state, and to avoid substantial overlap of the plurality of vacuum ports in an open state. The multi-port valve assembly may comprise a transverse actuator coupled to the movable seal plate and a sealing actuator coupled to the movable seal plate.

Abstract translation: 等离子体处理装置可以包括等离子体处理室，等离子体电极组件，晶片台，等离子体产生气体入口，多个真空端口，至少一个真空泵和多口阀组件。 多口阀组件可以包括位于等离子体处理室中的可移动密封板。 可移动密封板可以包括横向端口密封表面，该横向端口密封表面的形状和尺寸在闭合状态下与多个真空端口完全重叠，以在部分打开的状态下部分地重叠多个真空端口，并且避免了 处于打开状态的多个真空口。 多端口阀组件可以包括耦合到可移动密封板的横向致动器和联接到可移动密封板的密封致动器。

公开(公告)号：US20160027652A1

公开(公告)日：2016-01-28

申请号：US14678491

申请日：2015-04-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kangmin JEON ,  Kyung-Sun KIM ,  DOUGYONG SUNG ,  Tae-Hwa KIM ,  Heungsik PARK ,  Jung Min KIM

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/67 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01J37/32449 ,  H01J37/32816 ,  H01J37/32834 ,  H01J37/32889 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/02118 ,  H01L21/02274 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069 ,  H01L27/11582

Abstract: Provided are a substrate manufacturing method and a substrate manufacturing apparatus used therefor. The substrate manufacturing method includes providing a substrate having a mask film into a chamber. A plasma reaction is induced in the chamber. A first gas and a second gas are alternately provided into the chamber to etch the substrate. Each of the first and second gases is provided into the chamber at a stabilized feed pressure including a pressure fluctuation profile comprising a square wave shape.