公开(公告)号：US20240222088A1

公开(公告)日：2024-07-04

申请号：US18557382

申请日：2022-04-20

Applicant: VOESTALPINE STAHL GMBH

Inventor： Pierre VANDEN BRANDE

IPC: H01J37/32

CPC classification number: H01J37/32688 ,  H01J37/32357 ,  H01J37/32623 ,  H01J37/32779 ,  H01J37/3299 ,  H01J2237/24564 ,  H01J2237/24585 ,  H01J2237/3321

Abstract: Method and corresponding device for plasma treating substrates (21) moving along a transport direction (5) through a treatment zone that is delimited in a direction transversal to said transport direction (5) by at least one wall (13) forming a diffuser panel presenting an aperture (23). The plasma is introduced into the treatment zone trough said aperture (23) and is generated by means of a plasma source connecting to the aperture (23). A multipolar cusp magnetic field is generated that extends along said wall (13) and at least partially around the aperture (23) and adjacent to this aperture (23) such that said plasma, entering the treatment zone trough said aperture (23), is distributed along said wall (13) in this treatment zone.

公开(公告)号：US20190194799A1

公开(公告)日：2019-06-27

申请号：US15852558

申请日：2017-12-22

Applicant: United Technologies Corporation

Inventor： Eric Jorzik

IPC: C23C14/50 ,  B05C13/02 ,  C23C14/56 ,  C23C14/24 ,  H01J37/20

CPC classification number: C23C14/505 ,  B05B13/02 ,  B05C1/003 ,  B05C13/02 ,  B05C15/00 ,  B05C17/002 ,  C23C14/04 ,  C23C14/246 ,  C23C14/56 ,  H01J37/20 ,  H01J37/32779 ,  H01J2237/202

Abstract: An embodiment of a line-of-sight coating fixture includes a support structure, a spindle, and a shadow structure. The support structure includes a plurality of compartments disposed below a platter, each compartment having an opening on a periphery of the support structure. Each compartment is adapted to receive and secure a base of a workpiece such that a body of each workpiece to be coated is disposed about a periphery of the support structure and extends above the platter. The spindle is disposed through a center of the platter or support structure for rotating the workpieces thereabout. The shadow structure is disposed about the spindle, inside of the periphery, the shadow structure sized and adapted to shield a portion of each workpiece from line-of-sight coating material.

公开(公告)号：US20180245217A1

公开(公告)日：2018-08-30

申请号：US15901145

申请日：2018-02-21

Applicant: Ascentool, Inc.

Inventor： George Xinsheng Guo

IPC: C23C16/458 ,  C23C16/04 ,  C23C16/46 ,  C23C16/513

CPC classification number: C23C16/4587 ,  C23C14/044 ,  C23C14/352 ,  C23C16/04 ,  C23C16/042 ,  C23C16/45563 ,  C23C16/46 ,  C23C16/50 ,  C23C16/513 ,  H01J37/32715 ,  H01J37/32743 ,  H01J37/32779 ,  H01J37/32899 ,  H01J37/3417 ,  H01J37/3435 ,  H01J37/3447 ,  H01J37/345

Abstract: A high throughput deposition apparatus includes a process chamber, a plurality of targets that form a first closed loop in the process chamber, wherein the first closed loop includes a long dimension defined by at least a first pair of targets and a short dimension defined by at least a second pair of targets, a first substrate carrier assembly that can hold one or more substrates and configured to receive a deposition material from the plurality of targets in the first closed loop, and a transport mechanism that can move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber.

公开(公告)号：US20180245212A1

公开(公告)日：2018-08-30

申请号：US15758459

申请日：2016-09-05

Applicant: Evatec AG

Inventor： Silvia Schwyn-Thony ,  Romeo Good ,  Michael Cheseaux ,  Marco Padrun

IPC: C23C14/35 ,  C23C14/50 ,  H01J37/32 ,  H01J37/34

CPC classification number: C23C14/35 ,  C23C14/505 ,  H01J37/32715 ,  H01J37/32779 ,  H01J37/3408 ,  H01J37/3423 ,  H01J37/3452

Abstract: A vacuum treatment apparatus includes a vacuum treatment recipient with a circular opening between an inside and exterior of the recipient. The recipient houses a turntable, which defines a plane (P) along its table surface, is drivingly rotatable around a central axis perpendicular to plane (P), and exhibits a plurality of circular substrates supports. The opening is arranged such that during a turn of the turntable the area of each of the substrate supports and the opening are fully aligned and completely face each other. The vacuum treatment apparatus also includes a PVD deposition source attached to the opening. The PVD source has a a circular material target and a static magnet arrangement. The magnet arrangement is arranged in a plane (M) in parallel to plane (P) and is not rotationally symmetric around a central axis running centrally through the magnet arrangement and being perpendicular to the plane (M).

公开(公告)号：US09960020B2

公开(公告)日：2018-05-01

申请号：US15328818

申请日：2015-08-05

Applicant: GRENZEBACH MASCHINENBAU GMBH

Inventor： Gerd Kleideiter ,  Thomas Krisch ,  Joerg Fiukowski ,  Olaf Gawer

IPC: C23C14/34 ,  H01J37/32 ,  H01J37/34 ,  C23C14/56 ,  C23C14/52

CPC classification number: H01J37/32834 ,  C23C14/352 ,  C23C14/52 ,  C23C14/562 ,  C23C14/564 ,  C23C14/568 ,  H01J37/32513 ,  H01J37/32761 ,  H01J37/32779 ,  H01J37/32788 ,  H01J37/32816 ,  H01J37/32889 ,  H01J37/32899 ,  H01J37/3405 ,  H01J37/3408

Abstract: Disclosed are an apparatus and a method for saving energy while increasing the conveying speed in vacuum coating plants consisting of a series of sputtering segments (3) and gas separation segments (2) along with a continuous substrate plane (1). Said apparatus has the following features: a) each of the sputtering segments (3) consists of a tank tub (12) inside which a conveying device (11) is located; the flange (6) of the tank is positioned in the immediate vicinity above the substrate plane (1); a cathode bearing block (5), along with targets (8) and gas inlet ducts (10), is located in the tank cover (4) in the immediate vicinity of the substrate together with splash guards (9); b) in the region of the substrate plane (1), the gas separation segments (2) are provided with a tunnel cover (14) that extends along the entire length of the gas separation segment (2); c) sputtering segments (3) and/or gas separation segments (2) are evacuated using one or more vacuum pumps (15), and the air pumped in said process is trapped in an air reservoir (25) having an adjustable volume.

公开(公告)号：US20180053639A1

公开(公告)日：2018-02-22

申请号：US15560605

申请日：2016-03-29

Applicant: COATING PLASMA INDUSTRIE

Inventor： Jocelyn VIARD

IPC: H01J37/32

CPC classification number: H01J37/32889 ,  H01J37/32403 ,  H01J37/32669 ,  H01J37/32733 ,  H01J37/32779 ,  H01J37/32899 ,  H01L21/6715 ,  H01L21/67173 ,  H01L21/6776

Abstract: Apparatus for treating the surface of objects with plasma, having: an enclosure; a means for placing this enclosure under vacuum; a zone for storing objects to be treated, which is called the upstream storing zone; a zone for storing treated objects, which is called the downstream storing zone; at least two plasma treatment chambers having a means for injecting an active gas mixture, a means for creating an electrical discharge and a means for confining the plasma to the volume inside the chamber; and a means for transferring between the storing zones and the chambers, characterized in that the transferring means are conveying means defining a conveying direction, and in that the various chambers are placed one behind the other, in the conveying direction, and in that the atmospheres of the various plasma treatment chambers are not hermetically sealed off from one another.

公开(公告)号：US20170117145A1

公开(公告)日：2017-04-27

申请号：US15296195

申请日：2016-10-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takahiro MIYAHARA

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  H01L21/3105

CPC classification number: H01L21/02337 ,  C23C16/342 ,  C23C16/345 ,  C23C16/45527 ,  C23C16/45551 ,  C23C16/56 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/32779 ,  H01L21/02112 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31051 ,  H01L21/76826

Abstract: There is provided a boron nitride film forming method for forming a boron nitride film on a target substrate, including: a first operation of introducing a boron-containing gas and a nitriding gas into a process vessel which accommodates the substrate, and depositing an incompletely-nitrided and boron-rich nitride film on the substrate by CVD or ALD; and a second operation of introducing a nitriding gas into the process vessel and subjecting the boron-rich nitride film to a nitriding process, wherein the first operation and the second operation are performed at least one.

公开(公告)号：US09460914B2

公开(公告)日：2016-10-04

申请号：US14856244

申请日：2015-09-16

Applicant: HITACHI KOKUSAI ELECTRIC INC.

Inventor： Katsuyoshi Harada ,  Yoshiro Hirose ,  Atsushi Sano

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/36 ,  C23C16/38 ,  C23C16/455 ,  H01J37/32

CPC classification number: H01L21/02205 ,  C23C16/342 ,  C23C16/36 ,  C23C16/45531 ,  C23C16/45542 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32779 ,  H01L21/02112 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0228

Abstract: A technique includes forming a film having a borazine ring structure and containing boron and nitrogen on a substrate by intermittently performing an act of simultaneously performing: (a) supplying borazine-based gas including a ligand to the substrate; and (b) supplying a ligand desorption gas which desorbs the ligand to the substrate, wherein the (a) and (b) are performed under a condition where the borazine ring structure in the borazine-based gas is held.

Abstract translation: 一种技术包括通过间歇地执行同时执行的动作来形成具有环硼氮烷环结构并在基底上含有硼和氮的膜：（a）向基材供给包含配体的环硼氮烷基气体; （b）提供将配体解吸到基底上的配位体解吸气体，其中（a）和（b）在维持在环硼氮烷基气体中的环硼氮烷环结构的条件下进行。

公开(公告)号：US20160064190A1

公开(公告)日：2016-03-03

申请号：US14689559

申请日：2015-04-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-jin NOH ,  Kwang-min PARK ,  Eun-sung SEO ,  Young-chang SONG ,  Jae-young AHN ,  Hun-hyeong LIM ,  Ji-hoon CHOI

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32091 ,  H01J37/32522 ,  H01J37/32779

Abstract: A substrate processing apparatus including a process chamber configured to receive a plurality of substrates oriented in a horizontal manner and vertically arranged with respect to the process chamber, a process gas supply unit configured to supply at least one process gas to the process chamber through a process gas supply nozzle, the process gas supply nozzle along an inner wall of the process chamber in a direction in which the substrates are sacked, an exhaust unit configured to exhaust the process gas from the process chamber, and a blocking gas supply unit configured to supply a blocking gas through a blocking gas injector provided in a circumferential direction of the process chamber such that a flow of the process gas in the process chamber is controlled may be provided.

Abstract translation: 一种基板处理装置，包括处理室，该处理室被配置为接收相对于处理室以水平方式定向并垂直布置的多个基板;处理气体供应单元，其配置成通过一个处理过程向处理室供应至少一个处理气体 气体供给喷嘴，沿着处理室的内壁沿着基板被排出的方向的工艺气体供给喷嘴，被配置为从处理室排出处理气体的排气单元和被配置为供给 可以提供在处理室的圆周方向上通过阻塞气体注入器的阻塞气体，从而可以控制处理室中的处理气体的流动。

公开(公告)号：US09054342B2

公开(公告)日：2015-06-09

申请号：US14029296

申请日：2013-09-17

Applicant: Samsung Display Co., Ltd.

Inventor： Yoshiaki Sakamoto ,  Nam Ha

IPC: H01L21/4763 ,  H01L51/56

CPC classification number: H01L51/56 ,  H01J37/32779 ,  H01J2237/334 ,  H01L21/67173 ,  H01L21/6776 ,  H01L51/0017

Abstract: Provided are an apparatus and method for etching an organic layer, in which an organic material deposited in a non-layer forming area of a substrate is etched. The apparatus includes an etching chamber; a plasma generator configured to supply plasma into the etching chamber; a stage disposed in the etching chamber and configured to support the substrate; and a mask configured to guide the plasma toward the non-pixel area.

Abstract translation: 提供了蚀刻有机层的装置和方法，其中沉积在衬底的非层形成区域中的有机材料被蚀刻。 该设备包括蚀刻室; 等离子体发生器，其被配置为将等离子体供应到所述蚀刻室中; 设置在所述蚀刻室中并被配置为支撑所述基板的台; 以及被配置为将等离子体引向非像素区域的掩模。