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    PLASMA CVD APPARATUS
    35.
    发明申请
    PLASMA CVD APPARATUS 审中-公开

    公开(公告)号：US20170096737A1

    公开(公告)日：2017-04-06

    申请号：US15126962

    申请日：2015-03-16

    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA

    Inventor： Hirohiko HISANO ,  Masafumi KOIZUMI

    IPC: C23C16/50 ,  H01J37/32 ,  C23C16/455

    CPC classification number: C23C16/50 ,  C23C16/455 ,  H01J37/32541 ,  H01J37/32577 ,  H01J37/32724 ,  H01J37/32908 ,  H01J2237/3321 ,  H05H1/46 ,  H05H2245/123

    Abstract: The present invention provides a plasma CVD apparatus capable of suppressing abnormal electrical discharge even when a high voltage is used. A plasma CVD apparatus 100 includes: a chamber 61 forming a plasma space; and a power introduction terminal 10 arranged in a terminal insertion hole 62 that extends through a wall 61a of the chamber 61, wherein: the power introduction terminal 10 includes an insulator 21 having a through hole 22 and a rod-like electrical conductor 11 inserted in the through hole 22; one end of the rod-like electrical conductor 11 is arranged in the chamber 61 and the other end of the rod-like electrical conductor 11 is electrically connected to a power source E that supplies power into the chamber 61; a gap between an inner wall 211 of the insulator 21 and the rod-like electrical conductor 11 is less than 2 mm; and a distance from said one end of the insulator 21, said one end being arranged in the plasma space inside the chamber 61, to a contact point 221 between the insulator 21 and the rod-like electrical conductor 11 is greater than 10 mm

    SUBSTRATE PROCESSING APPARATUS
    36.
    发明申请
    SUBSTRATE PROCESSING APPARATUS 审中-公开
    基板加工设备

    公开(公告)号：US20170076964A1

    公开(公告)日：2017-03-16

    申请号：US15262161

    申请日：2016-09-12

    Applicant: HITACHI KOKUSAI ELECTRIC INC.

    Inventor： Motoshi SAWADA

    IPC: H01L21/67 ,  H01J37/32

    CPC classification number: H01L21/67109 ,  H01J37/32009 ,  H01J37/32522 ,  H01J37/32724 ,  H01J37/32899 ,  H01J37/32908 ,  H01J37/3299 ,  H01L21/67017 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67248

    Abstract: A substrate processing apparatus includes process chambers configured to process substrates, process modules each including juxtaposed process chambers configured to process substrates, heat medium flow paths respectively installed in the process modules, and temperature adjustment parts individually installed in a corresponding relationship with the process modules and configured to allow a heat medium to flow through the flow paths installed in the process modules. Each of the flow paths includes: upstream and downstream flow path portions positioned at an upstream side and a downstream side of each of the process modules, a penetration flow path portion connected to the upstream flow path portion and configured to extend between the juxtaposed process chambers of each of the process modules, and an outer periphery flow path portion connected to the downstream flow path portion and configured to extend along an outer periphery of each of the process modules.

    Abstract translation: 基板处理装置包括被配置为处理基板的处理室，每个处理模块包括被配置成处理基板的并置处理室，分别安装在处理模块中的热介质流动路径和与处理模块相对应地单独地安装的温度调节部件，以及 被配置为允许热介质流过安装在过程模块中的流路。 每个流动路径包括：位于每个过程模块的上游侧和下游侧的上游和下游流动路径部分，连接到上游流动路径部分并被构造成在并置处理室之间延伸的穿透流动路径部分 以及连接到下游流路部分并且被配置为沿着每个处理模块的外周延伸的外周流路部分。

    MASK SHRINK LAYER FOR HIGH ASPECT RATIO DIELECTRIC ETCH
    37.
    发明申请
    MASK SHRINK LAYER FOR HIGH ASPECT RATIO DIELECTRIC ETCH 审中-公开
    用于高比例电介质蚀刻的掩模层

    公开(公告)号：US20170076945A1

    公开(公告)日：2017-03-16

    申请号：US15359362

    申请日：2016-11-22

    Applicant: Lam Research Corporation

    Inventor： Eric A. Hudson ,  Mark H. Wilcoxson ,  Kalman Pelhos ,  Hyunjong Shim ,  Merrett Wong

    IPC: H01L21/033 ,  H01L21/67 ,  H01J37/32 ,  H01L21/311

    CPC classification number: H01L21/0338 ,  H01J37/32091 ,  H01J37/32366 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32908 ,  H01J2237/334 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3205 ,  H01L21/67069 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67745

    Abstract: Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. In many embodiments, a mask shrink layer is deposited on a patterned mask layer to thereby narrow the openings in the mask layer. The mask shrink layer may be deposited through a vapor deposition process including, but not limited to, atomic layer deposition or chemical vapor deposition. The mask shrink layer can result in narrower, more vertically uniform etched features. In some embodiments, etching is completed in a single etch step. In some other embodiments, the etching may be done in stages, cycled with a deposition step designed to deposit a protective sidewall coating on the partially etched features. Metal-containing films are particularly suitable as mask shrink films and protective sidewall coatings.

    Abstract translation: 本文的各种实施例涉及用于在半导体衬底上的电介质堆叠中形成凹陷特征的方法，装置和系统。 在许多实施例中，掩模收缩层沉积在图案化掩模层上，从而使掩模层中的开口变窄。 掩模收缩层可通过包括但不限于原子层沉积或化学气相沉积的气相沉积工艺沉积。 掩模收缩层可以导致较窄的，更垂直均匀的蚀刻特征。 在一些实施例中，在单个蚀刻步骤中完成蚀刻。 在一些其它实施例中，蚀刻可以分阶段进行，循环使用沉积步骤设计成在部分蚀刻的特征上沉积保护性侧壁涂层。 含金属膜特别适合作为掩模收缩膜和保护性侧壁涂层。

    Plasma and induction heating power supply systems and related methods
    39.
    发明授权
    Plasma and induction heating power supply systems and related methods 有权
    等离子和感应加热电源系统及相关方法

    公开(公告)号：US09503006B2

    公开(公告)日：2016-11-22

    申请号：US13276589

    申请日：2011-10-19

    Applicant: Thomas Pohl ,  Ulrich Heller ,  Holger Raschke ,  Richard Gottschalk ,  Reinhard Schaefer

    Inventor： Thomas Pohl ,  Ulrich Heller ,  Holger Raschke ,  Richard Gottschalk ,  Reinhard Schaefer

    IPC: G06F1/26 ,  H02P9/00 ,  G06F9/44 ,  H01J37/32 ,  H05H1/46

    CPC classification number: H02P9/00 ,  G06F8/38 ,  H01J37/32908 ,  H05H2001/4682

    Abstract: In some aspects, a power supply system for a plasma application and/or an induction heating system includes at least two controllable power generators of different types. Each controllable power generator includes an associated identifier, and at least one operating unit for controlling at least one of the power generators, the operating unit includes an operating application to import the respective identifiers from the power generators that are connected to the operating application, and based on generator-specific configuration data that are stored for each power generator and the identifiers, the operating application constructs a graphic user interface on a display device of the operating unit.

    Abstract translation: 在一些方面，用于等离子体应用和/或感应加热系统的电源系统包括至少两个不同类型的可控发电机。 每个可控发电机包括相关联的标识符，以及至少一个操作单元，用于控制发电机中的至少一个，所述操作单元包括操作应用，以从连接到操作应用的发电机导入相应的标识符;以及 基于针对每个发电机存储的特定于发电机的配置数据和标识符，操作应用在操作单元的显示设备上构建图形用户界面。

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