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    Direct plating method and solution for palladium conductor layer formation
    31.
    发明授权
    Direct plating method and solution for palladium conductor layer formation 有权
    直接电镀法和钯导体层形成方法

    公开(公告)号：US08992756B2

    公开(公告)日：2015-03-31

    申请号：US12513611

    申请日：2006-11-06

    Applicant: Hisamitsu Yamamoto

    Inventor： Hisamitsu Yamamoto

    IPC: C25D5/02 ,  C23C18/44 ,  C25D5/56 ,  H05K3/18 ,  H05K3/42 ,  C23C18/16 ,  C23C18/20 ,  C23C18/30 ,  H05K1/03

    CPC classification number: C23C18/44 ,  C23C18/1653 ,  C23C18/2086 ,  C23C18/30 ,  C25D5/02 ,  C25D5/56 ,  H05K1/0346 ,  H05K3/181 ,  H05K3/422 ,  H05K3/427 ,  H05K2201/0344 ,  H05K2203/124

    Abstract: A surface of an object to be plated is subjected to a treatment for palladium catalyst impartation to impart a palladium catalyst to the surface of an insulating part thereof. A palladium conductor layer is formed on the insulating part from a solution for palladium conductor layer formation which contains a palladium compound, an amine compound, and a reducing agent. On the palladium conductor layer is then directly formed a copper deposit by electroplating. Thus, the work is converted to a conductor with the solution for palladium conductor layer formation, which is neutral, without using an electroless copper plating solution which is highly alkaline. Consequently, the polyimide is prevented from being attacked and no adverse influence is exerted on adhesion. By adding an azole compound to the solution for palladium conductor layer formation, a palladium conductor layer is prevented from depositing on copper.

    Abstract translation: 对被镀物体的表面进行钯催化剂的处理，将钯催化剂赋予其绝缘部分的表面。 在包含钯化合物，胺化合物和还原剂的钯导体层形成用溶液的绝缘部上形成钯导体层。 然后在钯导体层上通过电镀直接形成铜沉积物。 因此，不用使用高碱性化学镀铜溶液，将工件转化为具有中性的钯导体层形成溶液的导体。 因此，防止聚酰亚胺受到攻击，并且不会对粘合产生不利影响。 通过向溶液中添加唑化合物以形成钯导体层，可以防止钯导体层沉积在铜上。

    METHOD OF MANUFACTURING FLEXIBLE FILM
    35.
    发明申请
    METHOD OF MANUFACTURING FLEXIBLE FILM 审中-公开
    制造柔性膜的方法

    公开(公告)号：US20090294296A1

    公开(公告)日：2009-12-03

    申请号：US12357909

    申请日：2009-01-22

    Applicant: Jungsup YUM ,  Dongki KO

    Inventor： Jungsup YUM ,  Dongki KO

    IPC: C25D5/54

    CPC classification number: H05K3/426 ,  H05K1/0393 ,  H05K3/181 ,  H05K3/422 ,  H05K2201/0344 ,  H05K2201/09827

    Abstract: A method of manufacturing a flexible film is disclosed. The method includes (a) forming at least one hole on an insulating film, (b) after the step (a), forming a first metal layer on a first surface corresponding to an inner circumferential surface of the hole, and at least one of a second surface corresponding to an upper surface of the insulating film and a third surface corresponding to a lower surface of the insulating film, and (c) forming a second metal layer on the first metal layer. A thickness of the first metal layer is smaller than a thickness of the second metal layer.

    Abstract translation: 公开了制造柔性膜的方法。 该方法包括：（a）在绝缘膜上形成至少一个孔，（b）在步骤（a）之后，在对应于该孔的内周表面的第一表面上形成第一金属层，以及至少一个 与所述绝缘膜的上表面对应的第二表面和与所述绝缘膜的下表面对应的第三表面，以及（c）在所述第一金属层上形成第二金属层。 第一金属层的厚度小于第二金属层的厚度。

    Method of manufacturing interconnect substrate
    40.
    发明申请
    Method of manufacturing interconnect substrate 有权
    制造互连基板的方法

    公开(公告)号：US20070212871A1

    公开(公告)日：2007-09-13

    申请号：US11716720

    申请日：2007-03-09

    Applicant: Satoshi Kimura ,  Hidemichi Furihata ,  Toshihiko Kaneda

    Inventor： Satoshi Kimura ,  Hidemichi Furihata ,  Toshihiko Kaneda

    IPC: H01L21/4763

    CPC classification number: H01L21/288 ,  C23C18/1608 ,  C23C18/1651 ,  C23C18/1893 ,  C23C18/2086 ,  C23C18/30 ,  C23C18/34 ,  C23C18/40 ,  C23C18/54 ,  H01L21/76885 ,  H05K3/184 ,  H05K3/24 ,  H05K2201/0344 ,  H05K2203/0565 ,  H05K2203/073

    Abstract: A method of manufacturing an interconnect substrate by electroless plating, including: (a) forming a catalyst layer with a specific pattern on a substrate; (b) immersing the substrate in a first electroless plating solution including a first metal to deposit the first metal on the catalyst layer to form a first metal layer; and (c) immersing the substrate in a second electroless plating solution including a second metal to deposit the second metal on the first metal layer to form a second metal layer, an ionization tendency of the first metal being higher than an ionization tendency of the second metal.

    Abstract translation: 一种通过化学镀制造互连基板的方法，包括：（a）在基板上形成具有特定图案的催化剂层; （b）将基板浸入包含第一金属的第一非电镀溶液中以将第一金属沉积在催化剂层上以形成第一金属层; 以及（c）将所述基板浸渍在包含第二金属的第二非电解镀液中以将所述第二金属沉积在所述第一金属层上以形成第二金属层，所述第一金属的电离倾向高于所述第二金属的电离倾向 金属。

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