公开(公告)号：US20240164012A1

公开(公告)日：2024-05-16

申请号：US18422164

申请日：2024-01-25

Applicant: NIKON CORPORATION

Inventor： Shohei KOIZUMI ,  Yoshiaki KITO ,  Seiji KAWABATA ,  Tohru KIUCHI

IPC: H05K1/02 ,  H01L29/40 ,  H01L29/49 ,  H05K1/09 ,  H05K3/06 ,  H05K3/18 ,  H05K3/24 ,  H10K10/46 ,  H10K71/60

CPC classification number: H05K1/0277 ,  H01L29/401 ,  H01L29/4908 ,  H05K1/09 ,  H05K3/064 ,  H05K3/184 ,  H05K3/244 ,  H10K10/481 ,  H10K71/60 ,  H05K2201/0344 ,  H05K2201/0347 ,  H05K2203/0271 ,  H05K2203/072 ,  H05K2203/073

Abstract: Provided is a method of manufacturing a metal wiring on a substrate, including the steps of: forming a first layer containing a first material in at least part on the substrate; forming a crack in the first layer to form the first layer having the crack; and forming a second layer containing a second material in the first layer having the crack.

公开(公告)号：US11917751B2

公开(公告)日：2024-02-27

申请号：US17534936

申请日：2021-11-24

Applicant: TOPPAN INC.

Inventor： Masao Aratani

IPC: H05K1/11 ,  H05K1/02 ,  H05K3/18 ,  H05K3/46

CPC classification number: H05K1/0298 ,  H05K1/115 ,  H05K3/18 ,  H05K3/467 ,  H05K2201/0344 ,  H05K2201/09509 ,  H05K2201/09545 ,  H05K2201/09745 ,  H05K2201/09827 ,  H05K2201/09845

Abstract: A multilayer wiring board that improves the reliability of connection at a via hole connection portion, and a method for producing the multilayer wiring board. In a multilayer wiring board comprising a plurality of metal wiring layers alternately laminated with insulating layers interposed therebetween are electrically connected to each other via a via hole plated layer, wherein a dissimilar metallic layer, made from material different from that of the metal wiring layers, is interposed between each of the metal wiring layers on the bottom surface of the via hole and the via hole plated layer, and the dissimilar metallic layer interposed between the each of the metal wiring layers on the bottom surface of the via hole and the via hole plated layer is arranged in a concave shape on the surface of the concave portion formed in the metal wiring layer on the bottom surface of the via hole.

公开(公告)号：US11729912B2

公开(公告)日：2023-08-15

申请号：US17388134

申请日：2021-07-29

Applicant: IBIDEN CO., LTD.

Inventor： Kosuke Ikeda

IPC: H05K1/03 ,  H05K1/11 ,  H05K3/38 ,  H05K3/10

CPC classification number: H05K1/119 ,  H05K3/381 ,  H05K1/0373 ,  H05K3/108 ,  H05K2201/0344

Abstract: A wiring substrate includes an insulating layer including inorganic fillers and resin, and a conductor layer formed on a surface of the insulating layer and having a conductor pattern. The surface of the insulating layer has an arithmetic average roughness Ra in the range of 0.05 μm to 0.5 μm, the conductor layer includes a metal film formed on the surface of the insulating layer, and the inorganic fillers include a first inorganic filler including particles such that each of the particles has a portion of a surface separated from the resin and forming a gap with respect to the resin of the insulating layer and that the metal film of the conductor layer includes part formed in the gap between the first inorganic filler and the resin.

公开(公告)号：US20190037703A1

公开(公告)日：2019-01-31

申请号：US16049512

申请日：2018-07-30

Applicant: AT&S Austria Technologie & Systemtechnik Aktiengesellschaft

Inventor： Ares Wang ,  Yee-Bing Ling ,  Annie Tay

IPC: H05K3/00 ,  H05K3/46 ,  H05K3/24 ,  H05K1/02

CPC classification number: H05K3/0094 ,  H05K1/0298 ,  H05K3/0026 ,  H05K3/0055 ,  H05K3/241 ,  H05K3/244 ,  H05K3/423 ,  H05K3/4644 ,  H05K2201/0344 ,  H05K2201/09563 ,  H05K2203/1476 ,  Y10T29/49165

Abstract: A method of filling a hole formed in a component carrier with copper is disclosed. The method comprises i) forming a layer of an electrically conductive material covering at least part of a surface of a wall, wherein the wall delimits the hole, and subsequently ii) covering at least partially the layer and filling at least partially an unfilled volume of the hole with copper using a plating process including a bath. Hereby, the bath comprises a concentration of a copper ion, in particular Cu2+, in a range between 50 g/L and 75 g/L, in particular in a range between 60 g/L and 70 g/L.

公开(公告)号：US09699906B2

公开(公告)日：2017-07-04

申请号：US14408205

申请日：2013-03-13

Applicant: HSIO TECHNOLOGIES, LLC

Inventor： James Rathburn

IPC: H05K3/02 ,  H05K3/10 ,  H05K1/18 ,  H05K3/46 ,  H05K1/02 ,  H05K1/16

CPC classification number: H05K1/181 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/15311 ,  H05K1/0216 ,  H05K1/0256 ,  H05K1/0284 ,  H05K1/16 ,  H05K3/107 ,  H05K3/4664 ,  H05K3/4694 ,  H05K2201/0344 ,  H05K2201/10674 ,  H05K2201/10734 ,  Y10T29/49155 ,  H01L2924/00014

Abstract: A high density region for a low density circuit. At least a first liquid dielectric layer is deposited on the first surface of a first circuitry layer. The dielectric layer is imaged to create plurality of first recesses. Surfaces of the first recesses are plated electro-lessly with a conductive material to form first conductive structures electrically coupled to, and extending generally perpendicular to, the first circuitry layer. A plating resist is applied. A conductive material is electro-plated to the first conductive structure to substantially fill the first recesses, and the plating resist is removed.

公开(公告)号：US20140339699A1

公开(公告)日：2014-11-20

申请号：US14447908

申请日：2014-07-31

Applicant: International Business Machines Corporation

Inventor： Charles L. Arvin ,  Minhua Lu ,  Eric D. Perfecto ,  David J. Russell ,  Wolfgang Sauter ,  Krystyna W. Semkow ,  Thomas A. Wassick

IPC: H01L23/498 ,  H01L21/768

CPC classification number: H01L23/49816 ,  H01L21/76843 ,  H01L21/76885 ,  H01L23/49866 ,  H01L2224/11 ,  H05K1/09 ,  H05K3/3478 ,  H05K3/4007 ,  H05K2201/0338 ,  H05K2201/0341 ,  H05K2201/0344 ,  H05K2201/09745 ,  H05K2203/041

Abstract: An interconnect structure that includes a substrate having an electrical component present therein, and a under-bump metallurgy (UBM) stack that is present in contact with a contact pad to the electrical component that is present in the substrate. The UBM stack includes a metallic adhesion layer that is direct contact with the contact pad to the electrical component, a copper (Cu) seed layer that is in direct contact with the metallic adhesion layer layer, a first nickel (Ni) barrier layer that is present in direct contact with copper (Cu) seed layer, and a layered structure of at least one copper (Cu) conductor layer and at least one second nickel (Ni) barrier layer present on the first nickel (Ni) barrier layer. A solder ball may be present on second nickel (Ni) barrier layer.

Abstract translation: 一种互连结构，其包括其中存在电气部件的基板以及与接触焊盘接触的凸起下冶金（UBM）堆叠，所述凸块冶金（UBM）堆叠存在于所述基板中的所述电气部件。 UBM堆叠包括与接触焊盘直接接触电气部件的金属粘合层，与金属粘附层层直接接触的铜（Cu）种子层，第一镍（Ni）阻挡层， 存在于铜（Cu）种子层的直接接触中，以及存在于第一镍（Ni）阻挡层上的至少一个铜（Cu）导体层和至少一个第二镍（Ni）阻挡层的层状结构。 第二镍（Ni）阻挡层上可能存在焊球。

公开(公告)号：US20140076618A1

公开(公告)日：2014-03-20

申请号：US13692643

申请日：2012-12-03

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD. ,  RESEARCH & BUSINESS FOUNDATION SUNGK

Inventor： Seong Min CHO ,  Chan Hwa CHUNG ,  Chang Yong AN ,  Chang Sup RYU ,  Hyo Seung NAM

IPC: H05K3/18 ,  H05K1/09

CPC classification number: H05K3/188 ,  C23C18/1637 ,  C23C18/1651 ,  C23C18/1844 ,  C23C18/36 ,  C23C18/44 ,  C23C18/48 ,  C23C18/54 ,  H05K1/09 ,  H05K3/244 ,  H05K2201/0344 ,  H05K2203/073

Abstract: There is provided a method of forming a gold thin film, the method including: forming a nickel plating layer on a surface of an object through electroless nickel (Ni) plating; forming a palladium-copper mixture plating layer on the nickel plating layer through electroless plating using a palladium-copper (Pd—Cu) mixture; and forming a first gold thin film by immersing the palladium-copper mixture plating layer in a gold (Au) galvanic electrolytic liquid to replace a portion of copper (Cu) particles in the palladium-copper mixture plating layer with gold particles through a replacement reaction.

Abstract translation: 提供一种形成金薄膜的方法，所述方法包括：通过无电镀镍（Ni）电镀在物体的表面上形成镀镍层; 通过使用钯 - 铜（Pd-Cu）混合物的化学镀来在镍镀层上形成钯 - 铜混合物镀层; 并且通过将钯 - 铜混合物镀层浸入金（Au）电解电解液中形成第一金薄膜，以通过置换反应用金颗粒代替钯 - 铜混合物镀层中的一部分铜（Cu）颗粒 。

公开(公告)号：US20120088120A1

公开(公告)日：2012-04-12

申请号：US13375918

申请日：2010-06-02

Applicant: Kimiko Fujisawa ,  Kenichi Ohga

Inventor： Kimiko Fujisawa ,  Kenichi Ohga

IPC: B32B15/08 ,  B05D1/36 ,  C23C28/02 ,  C25D5/56

CPC classification number: B32B15/08 ,  B32B2307/3065 ,  B32B2457/00 ,  C23C18/1641 ,  C23C18/1653 ,  C23C18/2073 ,  C23C18/40 ,  H05K1/0393 ,  H05K3/181 ,  H05K2201/0129 ,  H05K2201/0344 ,  Y10T428/12569

Abstract: Disclosed is a metal-clad laminate and a method for producing a metal-clad laminate wherein adhesion between a metal layer and a thermoplastic film serving as a base material is improved, the deposition rate of a plating coat on the base material is improved, and the insulating resistance after etching is properly adjusted at the same time.The metal-clad laminate comprises a base material that is composed of a thermoplastic polymer film, a base metal layer that is provided on the surface of the base material, and an upper metal layer that is provided on the surface of the base metal layer.The base metal layer is made of a copper alloy that contains 0.05-0.21 mass % of phosphorus, and the upper metal layer is made of copper or a copper alloy.

Abstract translation: 公开了一种覆金属箔层压板及其制造方法，其中金属层和用作基材的热塑性膜之间的粘附性得到改善，镀层在基材上的沉积速率提高， 蚀刻后的绝缘电阻同时适当调整。 覆金属层压板包括由热塑性聚合物膜，设置在基材的表面上的基底金属层和设置在基底金属层的表面上的上部金属层构成的基材。 基底金属层由含有0.05-0.21质量％的磷的铜合金制成，上部金属层由铜或铜合金构成。

公开(公告)号：US08147904B2

公开(公告)日：2012-04-03

申请号：US12556143

申请日：2009-09-09

Applicant: Satoru Zama ,  Kenichi Ohga

Inventor： Satoru Zama ,  Kenichi Ohga

IPC: B32B3/10

CPC classification number: H05K3/022 ,  C22C1/002 ,  C23C18/31 ,  C25D5/50 ,  H05K1/0393 ,  H05K3/181 ,  H05K3/38 ,  H05K2201/0129 ,  H05K2201/0344 ,  H05K2203/1105 ,  Y10T428/24322 ,  Y10T428/31678

Abstract: A method for manufacturing a metal clad laminate having a film and a metal layer formed of a foundation layer and an upper layer includes the steps of forming the foundation layer on at least a part of a surface of the film by plating to obtain a first laminate; forming the upper layer on the first laminate by plating to obtain a second laminate; and heating the second laminate to obtain the metal clad laminate. Further, the film is a flexible thermoplastic polymer film, the foundation layer is formed of a nickel alloy, the upper layer is formed of copper, at least one of the foundation layer and the upper layer has a compression stress before the step of heating the second laminate, and the metal clad laminate shrinks in a planar direction of the film during the step of heating the second laminate.

Abstract translation: 一种具有由基底层和上层形成的膜和金属层的金属覆层叠层的制造方法，包括以下步骤：通过电镀在所述膜的至少一部分表面上形成所述基底层，以获得第一层压体 ; 通过电镀在第一层压体上形成上层以获得第二层压体; 并加热第二层压板以获得覆金属层压板。 此外，该膜是柔性热塑性聚合物膜，基底层由镍合金形成，上层由铜形成，基础层和上层中的至少一个在加热步骤之前具有压缩应力 第二层压体，并且在加热第二层压体的步骤期间，金属包覆层压板在膜的平面方向上收缩。

公开(公告)号：US20110318602A1

公开(公告)日：2011-12-29

申请号：US13148708

申请日：2010-02-17

Applicant: Taku Yoshida

Inventor： Taku Yoshida

IPC: B32B27/06 ,  B32B33/00

CPC classification number: H05K3/388 ,  C23C18/1651 ,  C23C18/2006 ,  C23C18/204 ,  C23C18/24 ,  C25D5/56 ,  H05K1/0346 ,  H05K3/181 ,  H05K3/381 ,  H05K2201/0154 ,  H05K2201/0344 ,  H05K2201/2063 ,  Y10T428/12535 ,  Y10T428/31721

Abstract: [Object] To provide a metal-coated polyimide resin substrate that does not deteriorate the initial adhesion between the metal-coated polyimide resin film and the metal layer and has high adhesion after aging at 150° C. for 168 hours.[Solution] A metal-coated polyimide resin substrate in which a barrier layer is formed by a wet process after performing surface modification to one surface or both surfaces of a polyimide resin film by a wet process or a dry process or a combination thereof, a seed layer is thereafter formed by a wet process or a dry process, and a conductive film is formed on a surface layer thereof by a wet process; wherein, at the peeling surface on the conductive film layer side after the metal-coated polyimide resin substrate is subject to a 90-degree peel test, the thickness of a mixed layer of polyimide residue and barrier metal layer residue according to in-depth profiling with a time-of-flight secondary ion mass spectrometer (TOF-SIMS) is 2.60 nm or less based on Si sputter rate conversion, and peel strength retention after an aging test at 150° C. for 168 hours (peel strength after aging at 150° C. for 168 hours/initial peel strength) is 50% or higher.

Abstract translation: 本发明提供一种金属包覆的聚酰亚胺树脂基板，其不会使金属包覆的聚酰亚胺树脂膜与金属层之间的初始粘合性劣化，并且在150℃下老化168小时后具有高粘附性。 [方案]一种金属涂覆的聚酰亚胺树脂基板，其中通过湿法或干法或其组合对聚酰亚胺树脂膜的一个表面或两个表面进行表面改性之后通过湿法形成阻挡层， 然后通过湿法或干法形成种子层，并通过湿法在其表面层上形成导电膜; 其中，在金属涂覆的聚酰亚胺树脂基板进行90度剥离试验之后的导电膜层侧的剥离面上，根据深度图案，聚酰亚胺残留物和阻隔金属层残留物的混合层的厚度 使用飞行时间次级离子质谱仪（TOF-SIMS），基于Si溅射速率转换为2.60nm以下，150℃下老化试验后的剥离强度保持168小时（老化后的剥离强度 150℃，168小时/初始剥离强度）为50％以上。