Abstract:
A registered memory module includes several memory devices coupled to a register through a plurality of transmission lines forming a symmetrical tree topology. The tree includes several branches each of which includes two transmission lines coupled only at its ends to either another transmission line or one of the memory devices. The branches are arranged in several layers of hierarchy, with the transmission lines in branches having the same hierarchy having the same length. Each transmission line preferably has a characteristic impedance that is half the characteristic impedance of any pair of downstream transmission lines to which it is coupled to provide impedance matching. A dedicated transmission line is used to couple an additional memory device, which may or may not be an error checking memory device, to the register.
Abstract:
A wiring board with an electronic device comprising a plurality of trenches arranged in parallel on a substrate, a common trench communicating the plurality of trenches with each other at one of their ends on the substrate, a metal layer formed at the bottom of the plurality of trenches, and an electrode layer connected with the metal layer and formed on a bottom of the common trench, wherein the electrode layer on the bottom of the common trench constitutes a source electrode or a drain electrode of a field effect transistor, whereby the wiring board and an electronic circuit having a good fine wire pattern and a good narrow gap between the patterns using a coating material can be formed, and a reduction for a cost of an organic thin film electronic device and the electronic circuit can be attained since they can be realized through a development of a printing technique.
Abstract:
An address signal line having a stub structure connects between at least three memory elements and a data transferring element and transmits address signals for the memory elements. An address terminal of the data transferring element has an impedance lower than a characteristic impedance of the address signal line. A wiring length TL0 from the data transferring element to a first branch point S1 where a branch line is branched at a shortest distance from the data transferring element is configured to become equal to or greater than a wiring length TL1 from the first branch point S1 to a second branch point S2 where a second branch line is branched. A wiring length TL3 from the second branch point S2 to a third branch point S3 where a third branch line is branched is configured to become greater than the wiring lengths TL0 and TL1.
Abstract:
A memory module includes a memory chip MC1 disposed at a position opposite to a memory buffer via a module substrate, a memory chip MC3 disposed at a position not opposite to the memory buffer via the module substrate, and a memory chip MC11 disposed at a position opposite to the memory chip MC3 via the module substrate. A branch point at which a wiring part connected to the memory chip MC1 and a wiring part connected to the memory chips MC3 and MC11 are branched is positioned at the memory buffer side from the viewpoint of the intermediate point between the planar mounting position of the memory buffer and the planar mounting position of the memory chips MC3 and MC11. Accordingly, the wiring length of the wiring part can be made sufficiently short.
Abstract:
Methods and arrangements to gang differential clock signals to attenuate pin-to-pin output skew for a clock driver are disclosed. Embodiments may comprise a pattern of conductors to interconnect output pins for differential clock signals with termination resistors. The pattern of conductors comprises a group of conductors for a positive clock (p-clock) signal and a group of conductors for a negative clock (n-clock) signal. The conductors for the p-clock signal intersect at a gang point between the output pins and pads for the termination resistors. Similarly, the conductors for the n-clock signals intersect at a gang point between the pins and the pads. In many embodiments, the distance between the pins and pads may be approximately 120 mils. In further embodiments, the distance may be longer or shorter than 120 mils. Other embodiments are disclosed and claimed.
Abstract:
A device (20) for interconnecting electrical bundles, includes a plurality of pluggable connection and cross-connect cards (34 to 38) for the electrical bundles. The device further includes a “main” printed circuit (28, 28b) fitted with connectors or slots (29 to 33) designed and arranged to receive the pluggable cards, the printed circuit having a plurality of parallel tracks (46), each enabling two tracks (61 to 63, 68) or tracks starters (70 to 72) provided respectively on two distinct pluggable cards plugged in the connectors of the main printed circuit to be put to the same potential, each of the parallel tracks (46) being in contact with a respective pin (50, 150) of a plurality of connectors of the main printed circuit.
Abstract:
A registered memory module includes several memory devices coupled to a register through a plurality of transmission lines forming a symmetrical tree topology. The tree includes several branches each of which includes two transmission lines coupled only at its ends to either another transmission line or one of the memory devices. The branches are arranged in several layers of hierarchy, with the transmission lines in branches having the same hierarchy having the same length. Each transmission line preferably has a characteristic impedance that is half the characteristic impedance of any pair of downstream transmission lines to which it is coupled to provide impedance matching. A dedicated transmission line is used to couple an additional memory device, which may or may not be an error checking memory device, to the register.
Abstract:
An interconnect structure employs a closed-grid bus to link an integrated circuit tester channel to an array of input/output (I/O) pads on a semiconductor wafer so that the tester channel can concurrently communicate with all of the I/O pads. The interconnect structure includes a circuit board implementing an array of bus nodes, each corresponding to a separate one of the I/O pads. The circuit board includes at least two layers. Traces mounted on a first layer form a set of first daisy-chain buses, each linking all bus nodes of a separate row of the bus node array. Traces mounted on a second circuit board layer form a set of second daisy-chain buses, each linking all bus nodes of a separate column of the bus node array. Vias and other circuit board interconnect ends of the first and second daisy-chain buses so that they form the closed-grid bus. Each bus node is connected though a separate isolation resistor to a separate contact pad mounted on a surface of the circuit board. A set of spring contacts or probes link each contact pad to a separate one of the I/O pads on the wafer.
Abstract:
A circuit and system for improving signal integrity in a memory system. The circuit has a transmission line having a dampening impedance between a driver and a branch point of the transmission line. The circuit also has a termination impedance having one end coupled to the transmission line between the dampening impedance and the branch point. The transmission line has branches coupled to memory module interfaces. The branches have respective lengths between the branch point and the memory module interfaces to be configured symmetrically, wherein the branch point is at a point to balance signal transmission on the branches.
Abstract:
A power distribution system for integrated circuits includes methods to damp resonance between a bypass capacitor network and a power/ground cavity of the printed circuit board that (a) does not require excessive quantities of bypass/damping components or (b) does not require high plane cavity capacitance or in the alternative can insure a Q of less than 1.4 at the transition from the bypass network to the plane cavity impedance cross-over.