Shaped beam lithography including temperature effects

    公开(公告)号:US10460071B2

    公开(公告)日:2019-10-29

    申请号:US15298464

    申请日:2016-10-20

    Applicant: D2S, Inc.

    Abstract: In some embodiments, data is received defining a plurality of shot groups that will be delivered by a charged particle beam writer during an overall time period, where a first shot group will be delivered onto a first designated area at a first time period. A temperature of the first designated area at a different time period is determined. In some embodiments, the different time period is when secondary effects of exposure from a second shot group are received at the first designated area. In some embodiments, transient temperatures of a target designated area are determined at time periods when exposure from a shot group is received. An effective temperature of the target area is determined, using the transient temperatures and applying a compensation factor based on an amount of exposure received during that time period. A shot in the target shot group is modified based on the effective temperature.

    Charged particle beam writing apparatus and method for calculating irradiation coefficient

    公开(公告)号:US10381196B2

    公开(公告)日:2019-08-13

    申请号:US15070719

    申请日:2016-03-15

    Abstract: A charged particle beam writing apparatus includes an enlarged pattern forming circuitry to form an enlarged pattern by enlarging a figure pattern to be written, depending on a shift number which is defined by the number of writing positions shifted in the x or y direction in plural writing positions where multiple writing is performed while shifting the position, a reduced pattern forming circuitry to form a reduced pattern by reducing the figure pattern, depending on the shift number, and an irradiation coefficient calculation circuitry to calculate an irradiation coefficient for modulating a dose of a charged particle beam irradiating each of small regions, using the enlarged and reduced patterns.

    Charged particle beam writing apparatus and charged particle beam writing method

    公开(公告)号:US10381194B2

    公开(公告)日:2019-08-13

    申请号:US16222999

    申请日:2018-12-17

    Abstract: A charged particle beam writing apparatus includes an area density calculation unit to calculate a pattern area density weighted using a dose modulation value, which has previously been input from an outside and in which an amount of correction of a dimension variation due to a proximity effect has been included, a fogging correction dose coefficient calculation unit to calculate a fogging correction dose coefficient for correcting a dimension variation due to a fogging effect by using the pattern area density weighted using the dose modulation value having been input from the outside, a dose calculation unit to calculates a dose of a charged particle beam by using the fogging correction dose coefficient and the dose modulation value, and a writing unit to write a pattern on a target object with the charged particle beam of the dose.

    Non-linear Dose- and Blur-Dependent Edge Placement Correction

    公开(公告)号:US20190214226A1

    公开(公告)日:2019-07-11

    申请号:US16239061

    申请日:2019-01-03

    CPC classification number: H01J37/3026 H01J37/3174

    Abstract: In a rasterized exposure method, in order to correct for a non-linear relationship between the position of a feature edge (dCD) of a pattern element boundary and the nominal position of the boundary as expressed through the dose of exposure (d) of the edge pixel, a position correction for edge positions is employed. The position correction includes: determining a position value describing said edge position, determining a corrected position value based on the position value using a predefined non-linear function, and modifying the pattern to effectively shift the pattern element boundary in accordance with the corrected position value. The non-linear function describes the inverse of the relationship between a nominal position value (d), which is used as input value during exposure of the pattern, and a resulting position (dCD) of the pattern element boundary generated when exposed with said nominal position value.

    MULTIPLE CHARGED PARTICLE BEAM WRITING METHOD, AND MULTIPLE CHARGED PARTICLE BEAM WRITING APPARATUS

    公开(公告)号:US20190198294A1

    公开(公告)日:2019-06-27

    申请号:US16228830

    申请日:2018-12-21

    Inventor: Hideo Inoue

    Abstract: A multiple charged particle writing method includes performing a tracking operation by shifting the main deflection position of multiple beams using charged particle beams in the direction of stage movement so that the main deflection position of the multiple beams follows the stage movement while a predetermined number of beam shots of the multiple beams are performed, and shifting the sub deflection position of the multiple beams so that each beam of the multiple beams straddles rectangular regions among plural rectangular regions obtained by dividing a writing region of a target object into meshes by the pitch size between beams of the multiple beams, and the each beam is applied to a different position in each of the rectangular regions straddled, and applying a predetermined number of shots per beam using plural beams in the multiple beams to each of the plural rectangular regions, during the tracking operation.

    Charged particle lithography system

    公开(公告)号:US10297420B2

    公开(公告)日:2019-05-21

    申请号:US14287234

    申请日:2014-05-27

    Abstract: A charged particle lithography system for exposing a wafer according to pattern data. The system comprises an electron optical column for generating a plurality of electron beamlets for exposing the wafer, the electron optical column including a beamlet blanker array for switching the beamlets on or off, a data path for transmitting beamlet control data for control of the switching of the beamlets, and a wafer positioning system for moving the wafer under the electron optical column in a scan direction. The wafer positioning system is provided with synchronization signals from the data path to align the wafer with the electron beams from the electron-optical column. The data path further comprises one or more processing units for generating the beamlet control data and one or more transmission channels for transmitting the beamlet control data to the beamlet blanker array.

    CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD

    公开(公告)号:US20190122857A1

    公开(公告)日:2019-04-25

    申请号:US16222999

    申请日:2018-12-17

    Abstract: A charged particle beam writing apparatus includes an area density calculation unit to calculate a pattern area density weighted using a dose modulation value, which has previously been input from an outside and in which an amount of correction of a dimension variation due to a proximity effect has been included, a fogging correction dose coefficient calculation unit to calculate a fogging correction dose coefficient for correcting a dimension variation due to a fogging effect by using the pattern area density weighted using the dose modulation value having been input from the outside, a dose calculation unit to calculates a dose of a charged particle beam by using the fogging correction dose coefficient and the dose modulation value, and a writing unit to write a pattern on a target object with the charged particle beam of the dose.

    Multi charged particle beam exposure method, and multi charged particle beam exposure apparatus

    公开(公告)号:US10269532B2

    公开(公告)日:2019-04-23

    申请号:US15605343

    申请日:2017-05-25

    Abstract: A multi charged particle beams exposure method includes assigning, with respect to plural times of shots of multi-beams using a charged particle beam, each shot to one of plural groups, depending on a total current value of beams becoming in an ON condition in a shot concerned in the multi-beams, changing the order of the plural times of shots so that shots assigned to the same group may be continuously emitted for each of the plural groups, correcting, for each group, a focus position of the multi-beams to a focus correction position for a group concerned corresponding to the total current value, and performing the plural times of shots of the multi-beams such that the shots assigned to the same group are continuously emitted in a state where the focus position of the multi-beams has been corrected to the focus correction position for the group concerned.

    Photonic probe for atomic force microscopy

    公开(公告)号:US10261106B2

    公开(公告)日:2019-04-16

    申请号:US15799337

    申请日:2017-10-31

    Abstract: A photonic probe for atomic force microscopy includes: a cantilever including: a tip; a wing in mechanical communication with the tip; an extension interposed between the tip and the wing to synchronously communicate motion of the tip with the wing; an optical resonator disposed proximate to the cantilever and that: receives input light; and produces output light, such that: the cantilever is spaced by a gap distance from the optical resonator, wherein the gap distance varies as the cantilever moves relative to the optical resonator, and the output light differs from the input light in response to movement of the cantilever relative to the optical resonator; an optical waveguide in optical communication with the optical resonator and that: provides the input light to the optical resonator; and receives the output light from the optical resonator.

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