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    [METHOD FOR FORMING NITRIDED TUNNEL OXIDE LAYE]
    41.
    发明申请
    [METHOD FOR FORMING NITRIDED TUNNEL OXIDE LAYE] 有权
    [形成氮化物氧化物层的方法]

    公开(公告)号：US20050090062A1

    公开(公告)日：2005-04-28

    申请号：US10605782

    申请日：2003-10-27

    Applicant: Tzu-Yu Wang

    Inventor： Tzu-Yu Wang

    IPC: H01L21/28 ,  H01L21/336

    CPC classification number: H01L21/28273 ,  H01L21/28185 ,  H01L21/28202 ,  Y10S438/954

    Abstract: A method for forming a nitrided tunnel oxide layer is described. A silicon oxide layer as a tunnel oxide layer is formed on a semiconductor substrate, and a plasma nitridation process is performed to implant nitrogen atoms into the silicon oxide layer. A thermal drive-in process is then performed to diffuse the implanted nitrogen atoms across the silicon oxide layer.

    Abstract translation: 描述了形成氮化隧道氧化物层的方法。 在半导体衬底上形成作为隧道氧化物层的氧化硅层，并且进行等离子体氮化处理以将氮原子注入到氧化硅层中。 然后进行热驱入工艺以将植入的氮原子扩散到氧化硅层上。

    Methods for angled ion implantation of semiconductor devices
    42.
    发明申请
    Methods for angled ion implantation of semiconductor devices 审中-公开
    半导体器件成角度离子注入的方法

    公开(公告)号：US20050078725A1

    公开(公告)日：2005-04-14

    申请号：US10969465

    申请日：2004-10-20

    Applicant: Tzu-Yu Wang

    Inventor： Tzu-Yu Wang

    IPC: H01L21/265 ,  H01S5/00 ,  H01L21/00

    CPC classification number: H01L21/26586

    Abstract: This disclosure concerns methods for ion implantation of semiconductor devices such as VCSELs. In on example of such a method, a surface of the semiconductor structure is disposed at a predetermined orientation. The semiconductor structure is then rotated at a predetermined speed. An ion beam of characteristic flux is generated and directed at the surface of the semiconductor structure so that the ion beam is incident on the surface at an incident flux angle. Because the ion beam is incident on the surface at a defined angle, an implant region having an approximately wedge shaped cross-section is formed in the semiconductor device.

    Abstract translation: 本公开涉及半导体器件（例如VCSEL）的离子注入方法。 在这种方法的例子中，半导体结构的表面以预定取向设置。 然后半导体结构以预定速度旋转。 产生特征通量的离子束并且指向半导体结构的表面，使得离子束以入射磁通角入射在表面上。 因为离子束以限定的角度入射在表面上，所以在半导体器件中形成具有大致楔形横截面的植入区域。

    Long wavelength VCSEL with tunnel junction, and implant
    43.
    发明授权
    Long wavelength VCSEL with tunnel junction, and implant 失效
    具有隧道结的长波长VCSEL和植入物

    公开(公告)号：US06813293B2

    公开(公告)日：2004-11-02

    申请号：US10301380

    申请日：2002-11-21

    Applicant: Ralph H. Johnson ,  Tzu-Yu Wang

    Inventor： Ralph H. Johnson ,  Tzu-Yu Wang

    IPC: H01S500

    CPC classification number: H01S5/18308 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18316 ,  H01S5/1833 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/2063 ,  H01S5/3095

    Abstract: A vertical cavity emitting laser (VCSEL) having a tunnel junction. The junction may be isolated with an implant into a top mirror and past the junction and p-layer. A trench around the VCSEL may result in reduced capacitance and more D.C. isolation of the junction. The implant may occur after the trench is made. Some implant may pass the trench to a bottom mirror. Additional isolation and current confinement may be provided with lateral oxidation of a layer below the junction. Internal trenches may be made from the top of the VCSEL vertically to an oxidizable layer below the junction. For further isolation, an open trench may be placed around a bonding pad and its bridge to the VCSEL and internal vertical trenches may be placed on the pad and its bridge down to the oxidizable layer.

    Abstract translation: 具有隧道结的垂直腔发射激光器（VCSEL）。 该结可以通过植入物分离成上反射镜并经过结和p层。 VCSEL周围的沟槽可能会导致电容降低，并可能导致更多的直流隔离。 植入物可以在制成沟槽之后发生。 一些植入物可以通过沟槽到底部反射镜。 可以提供额外的隔离和电流限制，其中在结点下方的层的侧向氧化。 内部沟槽可以从VCSEL的顶部垂直地连接到结点下面的可氧化层。 为了进一步隔离，可以在接合焊盘周围放置开放沟槽，并且其到VCSEL的桥接器和内部垂直沟槽可以被放置在焊盘上并且其桥接器到达可氧化层。

    Graded thickness optical element and method of manufacture therefor
    44.
    发明授权
    Graded thickness optical element and method of manufacture therefor 有权
    分级厚度光学元件及其制造方法

    公开(公告)号：US06606199B2

    公开(公告)日：2003-08-12

    申请号：US09975299

    申请日：2001-10-10

    Applicant: Tzu-Yu Wang

    Inventor： Tzu-Yu Wang

    IPC: G02B300

    CPC classification number: G02B5/0883 ,  G02B3/0012 ,  H01S5/18388

    Abstract: A graded optical element is provided that includes graded layers of optical material, wherein the layers may or may not have different indexes of refraction. A method for making such a graded thickness optical element is also provided. A masking layer is preferably spaced above a substrate, where the masking layer has at least one aperture therein. Optical material is then deposited on the substrate through the aperture in the masking layer to form a layer of refr material that extends laterally beyond the aperture in the masking layer in at least one region.

    Abstract translation: 提供了一种分级光学元件，其包括光学材料的渐变层，其中所述层可以具有或可以不具有不同的折射率。 还提供了制造这种渐变厚度光学元件的方法。 掩模层优选地在衬底上间隔开，其中掩模层在其中具有至少一个孔。 然后通过掩模层中的孔将光学材料沉积在衬底上，以形成在至少一个区域中横向延伸超过掩模层中的孔的折射率材料层。

    Clustering for prediction models in process control and for optimal dispatching
    45.
    发明授权
    Clustering for prediction models in process control and for optimal dispatching 有权
    用于过程控制和最优调度的预测模型的聚类

    公开(公告)号：US09037279B2

    公开(公告)日：2015-05-19

    申请号：US12831597

    申请日：2010-07-07

    Applicant: Francis Ko ,  Tzu-yu Wang ,  Kewei Zuo ,  Henry Lo ,  Jean Wang ,  Chih-Wei Lai

    Inventor： Francis Ko ,  Tzu-yu Wang ,  Kewei Zuo ,  Henry Lo ,  Jean Wang ,  Chih-Wei Lai

    IPC: G06F19/00 ,  H01L21/00 ,  G05B17/02

    CPC classification number: G05B19/41885 ,  G05B17/02 ,  G05B2219/45032

    Abstract: A first embodiment is a method for semiconductor process control comprising clustering processing tools of a processing stage into a tool cluster based on processing data and forming a prediction model for processing a semiconductor wafer based on the tool cluster. A second embodiment is a method for semiconductor process control comprising providing cluster routes between first stage tool clusters and second stage tool clusters, assigning a comparative optimization ranking to each cluster route, and scheduling processing of wafers. The comparative optimization ranking identifies comparatively which cluster routes provide for high wafer processing uniformity. Further, wafers that require high wafer processing uniformity are scheduled to be processed along one cluster route that has a high comparative optimization ranking that identifies the one cluster route to have a highest wafer processing uniformity, and wafers that do not require high wafer processing uniformity are scheduled to be processed along another cluster route.

    Abstract translation: 第一实施例是一种用于半导体处理控制的方法，其包括基于处理数据将处理级的处理工具集群到工具集群中，并且基于工具集群形成用于处理半导体晶片的预测模型。 第二实施例是一种用于半导体处理控制的方法，包括提供第一级工具集群和第二级工具集群之间的集群路由，为每个集群路由分配比较优化等级，以及调度晶片的处理。 比较优化排名确定了哪些集群路由提供高晶圆处理均匀性。 此外，需要高晶圆处理均匀性的晶片被调度为沿着具有高比较优化等级的一个集群路由进行处理，该优先等级标识一个集群路由以具有最高的晶片处理均匀性，并且不需要高晶片处理均匀性的晶片是 计划沿着另一个集群路由处理。

    Clustering for Prediction Models in Process Control and for Optimal Dispatching
    49.
    发明申请
    Clustering for Prediction Models in Process Control and for Optimal Dispatching 有权
    过程控制和最优调度中预测模型的聚类

    公开(公告)号：US20110060441A1

    公开(公告)日：2011-03-10

    申请号：US12831597

    申请日：2010-07-07

    Applicant: Francis Ko ,  Tzu-Yu Wang ,  Kewei Zuo ,  Henry Lo ,  Jean Wang ,  Chih-Wei Lai

    Inventor： Francis Ko ,  Tzu-Yu Wang ,  Kewei Zuo ,  Henry Lo ,  Jean Wang ,  Chih-Wei Lai

    IPC: G06F17/00

    CPC classification number: G05B19/41885 ,  G05B17/02 ,  G05B2219/45032

    Abstract: A first embodiment is a method for semiconductor process control comprising clustering processing tools of a processing stage into a tool cluster based on processing data and forming a prediction model for processing a semiconductor wafer based on the tool cluster. A second embodiment is a method for semiconductor process control comprising providing cluster routes between first stage tool clusters and second stage tool clusters, assigning a comparative optimization ranking to each cluster route, and scheduling processing of wafers. The comparative optimization ranking identifies comparatively which cluster routes provide for high wafer processing uniformity. Further, wafers that require high wafer processing uniformity are scheduled to be processed along one cluster route that has a high comparative optimization ranking that identifies the one cluster route to have a highest wafer processing uniformity, and wafers that do not require high wafer processing uniformity are scheduled to be processed along another cluster route.

    Abstract translation: 第一实施例是一种用于半导体处理控制的方法，其包括基于处理数据将处理级的处理工具集群到工具集群中，并且基于工具集群形成用于处理半导体晶片的预测模型。 第二实施例是一种用于半导体处理控制的方法，包括提供第一级工具集群和第二级工具集群之间的集群路由，为每个集群路由分配比较优化等级，以及调度晶片的处理。 比较优化排名确定了哪些集群路由提供高晶圆处理均匀性。 此外，需要高晶圆处理均匀性的晶片被调度为沿着具有高比较优化等级的一个集群路由进行处理，该优先等级标识一个集群路由以具有最高的晶片处理均匀性，并且不需要高晶片处理均匀性的晶片是 计划沿着另一个集群路由处理。

    SYSTEM AND METHOD FOR PORTABLE RAMAN SPECTROSCOPY
    50.
    发明申请
    SYSTEM AND METHOD FOR PORTABLE RAMAN SPECTROSCOPY 审中-公开
    便携式拉曼光谱系统和方法

    公开(公告)号：US20090219525A1

    公开(公告)日：2009-09-03

    申请号：US12040843

    申请日：2008-02-29

    Applicant: Matthew S. Marcus ,  Bernard S. Fritz ,  Tzu-Yu Wang

    Inventor： Matthew S. Marcus ,  Bernard S. Fritz ,  Tzu-Yu Wang

    IPC: G01J3/44

    CPC classification number: G01J3/44 ,  G01J3/02 ,  G01J3/0208 ,  G01J3/0213 ,  G01J3/0264 ,  G01J3/0272 ,  G01J3/0278 ,  G01J3/0289 ,  G01N21/65 ,  G01N2021/1793 ,  G01N2201/0221

    Abstract: One embodiment includes a method that includes scanning a plurality of specimens with a laser by moving the laser according to coordinates for laser movement and measuring a distance for each of the plurality of specimens, associating location information with each of the specimens of the plurality of specimens based on its distance from the laser and its coordinates for laser movement, recording a Raman spectrum for the plurality of specimens, associating a Raman spectrum with each specimen of the plurality of specimens and indicating a Raman spectrum and location information for at least one specimen.

    Abstract translation: 一个实施例包括一种方法，其包括通过根据激光移动的坐标移动激光器并且测量多个样本中的每一个的距离来测量多个样本的激光，将位置信息与多个样本中的每个样本相关联 基于其与激光器的距离及其激光运动坐标，记录多个样品的拉曼光谱，将拉曼光谱与多个样品中的每个样品相关联，并指示至少一个样品的拉曼光谱和位置信息。

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