公开(公告)号：US10204781B1

公开(公告)日：2019-02-12

申请号：US15896839

申请日：2018-02-14

Applicant: Applied Materials, Inc.

Inventor： Yung-Chen Lin ,  Qingjun Zhou ,  Xinyu Bao ,  Ying Zhang

IPC: H01L21/22 ,  H01L21/38 ,  H01L21/033 ,  H01L21/8234

Abstract: Embodiments described herein relate to substrate processing methods. The methods include forming a patterned hardmask material on a substrate, forming first mandrel structures on exposed regions of the substrate, and depositing a gap fill material on the substrate over the hardmask material and the first mandrel structures. The first mandrel structures are removed to expose second region of the substrate form second mandrel structures comprising the hardmask material and the gap fill material and fin structures are deposited on the substrate using the second mandrel structures as a mask.

公开(公告)号：US09978596B2

公开(公告)日：2018-05-22

申请号：US15377629

申请日：2016-12-13

Applicant: Applied Materials, Inc.

Inventor： Ying Zhang ,  Uday Mitra ,  Praburam Gopalraja ,  Srinivas D. Nemani ,  Hua Chung

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/033 ,  H01L21/311 ,  H01L21/768

CPC classification number: H01L21/0332 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76816

Abstract: The present disclosure provides forming nanostructures with precision dimension control and minimum lithographic related errors for features with dimension under 14 nanometers and beyond. A self-aligned multiple spacer patterning (SAMSP) process is provided herein and the process utilizes minimum lithographic exposure process, but rather multiple deposition/etching process to incrementally reduce feature sizes formed in the mask along the manufacturing process, until a desired extreme small dimension nanostructures are formed in a mask layer.

公开(公告)号：US20180105922A1

公开(公告)日：2018-04-19

申请号：US15844251

申请日：2017-12-15

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Vahid Firouzdor ,  Biraja Prasad Kanungo ,  Tom K. Cho ,  Vedapuram S. Achutharaman ,  Ying Zhang

IPC: C23C14/08 ,  C04B35/505 ,  C04B35/622 ,  C04B41/00 ,  C04B41/45 ,  C04B41/50 ,  C23C14/46 ,  C04B41/87 ,  C04B41/89 ,  H01J37/32 ,  C23C14/58 ,  C04B41/52

CPC classification number: C23C14/088 ,  C04B35/00 ,  C04B35/505 ,  C04B35/62222 ,  C04B41/009 ,  C04B41/4529 ,  C04B41/5045 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3225 ,  C04B2235/3246 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/3873 ,  C04B2235/428 ,  C04B2235/445 ,  C23C14/08 ,  C23C14/083 ,  C23C14/46 ,  C23C14/5806 ,  H01J37/32477 ,  Y10T428/26 ,  Y10T428/265 ,  C04B35/10 ,  C04B35/50 ,  C04B35/14 ,  C04B35/584 ,  C04B35/565 ,  C04B41/5032 ,  C04B41/5042 ,  C04B41/5035 ,  C04B2103/54

Abstract: An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide film consists essentially of 40 mol % to less than 100 mol % of Y2O3, over 0 mol % to 60 mol % of ZrO2, and 0 mol % to 9 mol % of Al2O3.

公开(公告)号：US20180100228A1

公开(公告)日：2018-04-12

申请号：US15837787

申请日：2017-12-11

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Biraja P. Kanungo ,  Vahid Firouzdor ,  Ying Zhang

IPC: C23C14/00 ,  H01L21/67 ,  B65D43/02 ,  H01J37/32 ,  C23C14/08 ,  C23C4/16 ,  C23C4/14 ,  C23C4/12 ,  C23C4/10 ,  C23C4/04

CPC classification number: H01L21/67023 ,  B65D43/02 ,  C23C4/01 ,  C23C4/04 ,  C23C4/10 ,  C23C4/11 ,  C23C4/12 ,  C23C4/134 ,  C23C4/14 ,  C23C4/16 ,  C23C14/0015 ,  C23C14/0021 ,  C23C14/0031 ,  C23C14/0036 ,  C23C14/0052 ,  C23C14/0084 ,  C23C14/0094 ,  C23C14/08 ,  C23C14/081 ,  C23C14/083 ,  C23C14/088 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32513 ,  H01J2237/334 ,  H01L21/67063 ,  H01L21/67069 ,  H01L21/6708 ,  H01L21/67086 ,  Y10T428/131 ,  Y10T428/1317 ,  Y10T428/139 ,  Y10T428/1393

Abstract: A component for a semiconductor processing chamber includes a ceramic body having at least one surface with a first average surface roughness of approximately 8-16 micro-inches. The component further includes a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 μm over the at least one surface and having a second average surface roughness of below 10 micro-inches, wherein the second average surface roughness is less than the first average surface roughness.

公开(公告)号：US20180053631A1

公开(公告)日：2018-02-22

申请号：US15783983

申请日：2017-10-13

Applicant: Applied Materials, Inc.

Inventor： Leonid Dorf ,  Kenneth S. Collins ,  Shahid Rauf ,  Kartik Ramaswamy ,  James D. Carducci ,  Hamid Tavassoli ,  Olga Regelman ,  Ying Zhang

IPC: H01J37/32 ,  H01J37/06 ,  H01L21/3065

CPC classification number: H01J37/32174 ,  H01J37/06 ,  H01J37/32082 ,  H01J37/3233 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32532 ,  H01J2237/3151 ,  H01J2237/3174 ,  H01J2237/334 ,  H01J2237/3348 ,  H01L21/3065 ,  H01L21/31116

Abstract: The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam.

公开(公告)号：US09797037B2

公开(公告)日：2017-10-24

申请号：US15211993

申请日：2016-07-15

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Vahid Firouzdor ,  Biraja Prasad Kanungo ,  Tom K. Cho ,  Vedapuram S. Achutharaman ,  Ying Zhang

IPC: C23C14/08 ,  C23C14/46 ,  C04B41/50 ,  C04B41/52 ,  C23C14/58 ,  C04B41/89 ,  C04B35/505 ,  C04B35/622 ,  H01J37/32 ,  C04B41/87 ,  C04B41/00

CPC classification number: C23C14/088 ,  C04B35/00 ,  C04B35/505 ,  C04B35/62222 ,  C04B41/009 ,  C04B41/4529 ,  C04B41/5045 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3225 ,  C04B2235/3246 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/3873 ,  C04B2235/428 ,  C04B2235/445 ,  C23C14/08 ,  C23C14/083 ,  C23C14/46 ,  C23C14/5806 ,  H01J37/32477 ,  Y10T428/26 ,  Y10T428/265 ,  C04B35/10 ,  C04B35/50 ,  C04B35/14 ,  C04B35/584 ,  C04B35/565 ,  C04B41/5032 ,  C04B41/5042 ,  C04B41/5035 ,  C04B2103/54

Abstract: An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide has a composition of 40-45 mol % of Y2O3, 5-10 mol % of ZrO2, 35-40 mol % of Er2O3, 5-10 mol % of Gd2O3, and 5-15 mol % of SiO2.

公开(公告)号：US20170287683A1

公开(公告)日：2017-10-05

申请号：US15620700

申请日：2017-06-12

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Biraja Kanungo ,  Tom Cho ,  Ying Zhang

IPC: H01J37/32 ,  C23C24/04

CPC classification number: H01J37/32807 ,  C23C24/04 ,  H01J37/3244 ,  Y10T428/24413

Abstract: An component of a processing chamber comprises an aerosol deposited coating on the component, the aerosol deposited coating comprising a first type of metal oxide nanoparticle and a second type of metal oxide nanoparticle.

公开(公告)号：US09721807B2

公开(公告)日：2017-08-01

申请号：US15080117

申请日：2016-03-24

Applicant: Applied Materials, Inc.

Inventor： Qingjun Zhou ,  Jungmin Ko ,  Tom Choi ,  Sean Kang ,  Jeremiah Pender ,  Srinivas D. Nemani ,  Ying Zhang

IPC: H01L21/311 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/033

CPC classification number: H01L21/31116 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/31105 ,  H01L21/32136 ,  H01L21/32137

Abstract: Embodiments described herein relate to methods for patterning a substrate. Patterning processes, such as double patterning and quadruple patterning processes, may benefit from the embodiments described herein which include performing an inert plasma treatment on a spacer material, performing an etching process on a treated region of the spacer material, and repeating the inert plasma treatment and the etching process to form a desired spacer profile. The inert plasma treatment process may be a biased process and the etching process may be an unbiased process. Various processing parameters, such as process gas ratios and pressures, may be controlled to influence a desired spacer profile.

公开(公告)号：US20170125217A1

公开(公告)日：2017-05-04

申请号：US15146133

申请日：2016-05-04

Applicant: APPLIED MATERIALS, INC.

Inventor： Leonid Dorf ,  Kenneth S. Collins ,  Shahid Rauf ,  Kartik Ramaswamy ,  James D. Carducci ,  Hamid Tavassoli ,  Olga Regelman ,  Ying Zhang

IPC: H01J37/32 ,  H01J37/06

CPC classification number: H01J37/32174 ,  H01J37/06 ,  H01J37/32082 ,  H01J37/3233 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32532 ,  H01J2237/3151 ,  H01J2237/3174 ,  H01J2237/334 ,  H01J2237/3348 ,  H01L21/3065 ,  H01L21/31116

Abstract: The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam.

公开(公告)号：US09564297B2

公开(公告)日：2017-02-07

申请号：US14307945

申请日：2014-06-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Ming-Feng Wu ,  Leonid Dorf ,  Shahid Rauf ,  Ying Zhang ,  Kenneth S. Collins ,  Hamid Tavassoli ,  Kartik Ramaswamy ,  Steven Lane

IPC: H01J37/32

CPC classification number: H01J37/32669 ,  H01J37/32082 ,  H01J37/3233 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32458

Abstract: In a plasma reactor for processing a workpiece, an electron beam is employed as the plasma source, and a remote radical source is incorporated with the process chamber.

Abstract translation: 在用于处理工件的等离子体反应器中，使用电子束作为等离子体源，并且将远程自由基源与处理室结合。