公开(公告)号：US20240222111A1

公开(公告)日：2024-07-04

申请号：US18396357

申请日：2023-12-26

Applicant: ASM IP Holding B.V.

Inventor： Viraj Madhiwala ,  Eva E. Tois ,  Daniele Chiappe ,  Marko Tuominen

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  H01L21/02046 ,  H01L21/0206 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/02304 ,  H01L21/02312

Abstract: Methods for selectively forming a dielectric layer on a metallic surface relative to a dielectric surface are disclosed. The disclosed selective formation methods include selective passivation processes, and selective deposition processes.

公开(公告)号：US20240047197A1

公开(公告)日：2024-02-08

申请号：US18491428

申请日：2023-10-20

Applicant: ASM IP Holding B.V.

Inventor： Jan Willem Hub Maes ,  Michael Eugene Givens ,  Suvi P. Haukka ,  Vamsi Paruchuri ,  Ivo Johannes Raaijmakers ,  Shaoren Deng ,  Andrea Illiberi ,  Eva E. Tois ,  Delphine Longrie ,  Viljami J. Pore

IPC: H01L21/02 ,  H01L21/324 ,  H01L21/67

CPC classification number: H01L21/0228 ,  H01L21/02669 ,  H01L21/324 ,  H01L21/67213 ,  H01L21/02315 ,  H01L21/02068 ,  H01L21/02178 ,  H01L21/02118

Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

公开(公告)号：US20230386934A1

公开(公告)日：2023-11-30

申请号：US18322286

申请日：2023-05-23

Applicant: ASM IP Holding, B.V.

Inventor： Shaoren Deng ,  Marko Tuominen ,  Vincent Vandalon ,  Eva E. Tois ,  Viraj Madhiwala ,  YongGyu Han ,  Daniele Chiappe ,  Michael Givens ,  Ren-Jie Chang ,  Giuseppe Alessio Verni ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt

IPC: H01L21/8238

CPC classification number: H01L21/823807

Abstract: Disclosed are methods and related systems for forming a structure. Embodiments of presently described methods comprise employing a sacrificial gap filling fluid for selectively forming a first layer on one or more first surfaces in a lower part of a gap, and forming a second layer on one or more second surfaces in an upper part of a gap.

公开(公告)号：US11830732B2

公开(公告)日：2023-11-28

申请号：US17470177

申请日：2021-09-09

Applicant: ASM IP HOLDING B.V.

Inventor： Jan Willem Hub Maes ,  Michael Eugene Givens ,  Suvi P. Haukka ,  Vamsi Paruchuri ,  Ivo Johannes Raaijmakers ,  Shaoren Deng ,  Andrea Illiberi ,  Eva E. Tois ,  Delphine Longrie ,  Viljami Pore

IPC: H01L21/02 ,  H01L21/324 ,  H01L21/67

CPC classification number: H01L21/0228 ,  H01L21/02068 ,  H01L21/02118 ,  H01L21/02178 ,  H01L21/02315 ,  H01L21/02669 ,  H01L21/324 ,  H01L21/67213

Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.

公开(公告)号：US20220349059A1

公开(公告)日：2022-11-03

申请号：US17807920

申请日：2022-06-21

Applicant: ASM IP HOLDING B.V.

Inventor： Varun Sharma ,  Eva E. Tois

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/18 ,  H01L23/31 ,  H01L21/02 ,  C23C16/02 ,  C23C16/04 ,  C23C16/40 ,  H01L21/321

Abstract: Passivation layers to inhibit vapor deposition can be used on reactor surfaces to minimize deposits while depositing on a substrate housed therein, or on particular substrate surfaces, such as metallic surfaces on semiconductor substrates to facilitate selective deposition on adjacent dielectric surfaces. Passivation agents that are smaller than typical self-assembled monolayer precursors can have hydrophobic or non-reactive ends and facilitate more dense passivation layers more quickly than self-assembled monolayers, particularly over complex three-dimensional structures.

公开(公告)号：US20210175092A1

公开(公告)日：2021-06-10

申请号：US17130902

申请日：2020-12-22

Applicant: ASM IP Holding B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma ,  Jan Willem Maes ,  Delphine Longrie ,  Krzysztof Kachel

IPC: H01L21/311 ,  C23C16/56 ,  H01L21/033 ,  H01L21/02 ,  C23C16/455 ,  H01L21/32 ,  H01L21/3213 ,  C23C16/04 ,  H01L21/768

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.

公开(公告)号：US10854460B2

公开(公告)日：2020-12-01

申请号：US16504861

申请日：2019-07-08

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma

IPC: H01L21/285 ,  H01L21/02 ,  H01L21/768 ,  H01L21/3065 ,  C23C16/04 ,  B05D1/00 ,  C23C16/455 ,  C23C16/56

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.

公开(公告)号：US20180151345A1

公开(公告)日：2018-05-31

申请号：US15364024

申请日：2016-11-29

Applicant: ASM IP HOLDING B.V.

Inventor： Suvi P. Haukka ,  Elina Färm ,  Raija H. Matero ,  Eva E. Tois ,  Hidemi Suemori ,  Antti Juhani Niskanen ,  Sung-Hoon Jung ,  Petri Räisänen

IPC: H01L21/02 ,  C23C14/08 ,  C23C16/44 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/04 ,  C23C16/042 ,  C23C16/40 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45525 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/3105 ,  H01L21/32

Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.