公开(公告)号：US20090022946A1

公开(公告)日：2009-01-22

申请号：US12223765

申请日：2007-02-08

Applicant: Masato Hayashi ,  Msanori Yamaguchi ,  Yohei Yamada ,  Jun Murase ,  Katsuyuki Ono ,  Naoyuki Satoh

Inventor： Masato Hayashi ,  Msanori Yamaguchi ,  Yohei Yamada ,  Jun Murase ,  Katsuyuki Ono ,  Naoyuki Satoh

IPC: B32B7/00 ,  B44C1/22

CPC classification number: B81C1/00682 ,  B81B2201/0292 ,  B81B2203/0127 ,  B81C1/00158 ,  G03F1/20 ,  H01J5/18 ,  Y10T428/24174

Abstract: The present invention provides a membrane structure having favorable pressure resistance and a manufacturing method of the same. After forming an opening (21a) on a substrate (21) by Deep Digging Reactive Ion Etching (DRIE), vertical streak formed by DRIE on the side face (inner peripheral face) of the opening (21a) is removed by performing light etching with an alkali etchant. The level of overhang of an overhanging section (21b) formed when forming an opening (22a) of a BOX layer (22) is suppressed by suppressing the overetching level when forming the BOX layer (22) by etching.

Abstract translation: 本发明提供具有良好耐压性的膜结构及其制造方法。 在通过深挖反应离子蚀刻（DRIE）在基板（21）上形成开口（21a）之后，通过对开口21a的侧面（内周面）形成的由DRIE形成的垂直条纹，通过用 碱蚀刻剂。 当通过蚀刻形成BOX层（22）时，通过抑制过蚀刻水平来抑制在形成BOX层（22）的开口（22a）时形成的悬垂部分（21b）的悬垂度。

公开(公告)号：US07453269B2

公开(公告)日：2008-11-18

申请号：US11029006

申请日：2005-01-05

Applicant: Jong-hwa Won ,  Hyung Choi ,  Kwon-hee Kim ,  Oh-myoung Kwon

Inventor： Jong-hwa Won ,  Hyung Choi ,  Kwon-hee Kim ,  Oh-myoung Kwon

IPC: G01R27/26

CPC classification number: G01P15/0802 ,  B81B3/0021 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2201/0292 ,  G01P3/486 ,  G01P3/488 ,  G01P15/08 ,  G01P15/125

Abstract: A microelectromechanical system (MEMS) sensor and method for measuring the motion of an intermediate member and a method for making the MEMS sensor. The MEMS sensor includes a substrate, a lower magnetic member disposed on the substrate, a layer disposed over the substrate, an upper magnetic member disposed at a side of the layer facing the lower magnetic member, an intermediate magnetic member magnetically levitated between the lower magnetic member and upper magnetic member; and a component measuring at least one of motion, forces acting on, and a displacement of the intermediate magnetic member.

Abstract translation: 一种微机电系统（MEMS）传感器和用于测量中间构件的运动的方法和用于制造MEMS传感器的方法。 MEMS传感器包括基板，设置在基板上的下磁性部件，设置在基板上的层，设置在面向下磁性部件的一侧的上部磁性部件，磁性悬浮在下部磁性体 构件和上磁性构件; 以及测量作用于中间磁性构件的运动，作用力和位移之中的至少一个的部件。

公开(公告)号：US20080054382A1

公开(公告)日：2008-03-06

申请号：US11879462

申请日：2007-07-17

Applicant: Joseph Stetter

Inventor： Joseph Stetter

IPC: H01L27/14

CPC classification number: B81B3/0059 ,  B81B2201/0214 ,  B81B2201/0278 ,  B81B2201/0292 ,  B81B2203/0118

Abstract: A universal microelectromechanical MEMS nano-sensor platform having a substrate and conductive layer deposited in a pattern on the surface to make several devices at the same time, a patterned insulation layer, wherein the insulation layer is configured to expose one or more portions of the conductive layer, and one or more functionalization layers deposited on the exposed portions of the conductive layer. The functionalization layers are adapted to provide one or more transducer sensor classes selected from the group consisting of: radiant, electrochemical, electronic, mechanical, magnetic, and thermal sensors for chemical and physical variables.

Abstract translation: 一种通用微机电MEMS纳米传感器平台，其具有在表面上以图案沉积的衬底和导电层，以同时制造多个器件，图案化绝缘层，其中绝缘层被配置为暴露导电的一个或多个部分 层和沉积在导电层的暴露部分上的一个或多个官能化层。 功能化层适于提供从由以下组成的组中选择的一个或多个换能器传感器类：用于化学和物理变量的辐射，电化学，电子，机械，磁性和热传感器。

公开(公告)号：US20080050561A1

公开(公告)日：2008-02-28

申请号：US11813626

申请日：2006-01-10

Applicant: Helene Joisten ,  Robert Cuchet ,  Marcel Audoin ,  Gerard Barrois

Inventor： Helene Joisten ,  Robert Cuchet ,  Marcel Audoin ,  Gerard Barrois

IPC: B32B3/00 ,  B44C1/22

CPC classification number: B81B3/0054 ,  B81B2201/0292 ,  B81B2203/0118 ,  B81B2203/058 ,  B81C2201/0132 ,  B81C2203/032 ,  Y10T428/24479

Abstract: The invention relates to a method for producing a component with a first face of a plate-shaped structure involving the following steps: engraving a second face of the structure, which is opposite the first face, on a portion of its surface in order to define an area of reduced thickness, and; inclining the area of reduced thickness with regard to said structure. A component of this type has a recess between the plate-shaped structure and the inclined area of reduced thickness. The inclined area can support active elements that function according to a direction defined by the inclination.

Abstract translation: 本发明涉及一种用于制造具有板状结构的第一面的部件的方法，包括以下步骤：在其表面的一部分上雕刻结构的与第一面相对的第二面，以限定其表面的一部分 厚度减小的区域; 相对于所述结构倾斜减小厚度的面积。 这种类型的部件在板状结构和厚度减小的倾斜区域之间具有凹陷。 倾斜区域可以支持根据由倾斜度限定的方向起作用的有源元件。

公开(公告)号：US20060228823A1

公开(公告)日：2006-10-12

申请号：US11101861

申请日：2005-04-08

Applicant: Bai Xu ,  Natalya Tokranova ,  James Castracane

Inventor： Bai Xu ,  Natalya Tokranova ,  James Castracane

IPC: H01L21/00

CPC classification number: B81C3/001 ,  B81B2201/0292 ,  B81C2203/031

Abstract: A silicon-on-insulator (SOI) substrate is anodically bonded to a glass substrate in a MEMS structure with or without electrically bypassing the insulator layer by electrically comprising the silicon layers. The insulator layer serves as an etch stop to create a well-defined, thin silicon membrane for a sensor. A second glass substrate is anodically bonded to the other side of the SOI substrate, and debonding of the existing anodic bond prevented by eliminating any potential drop across the existing bonded surface.

公开(公告)号：US07095064B2

公开(公告)日：2006-08-22

申请号：US10809343

申请日：2004-03-26

Applicant: Kazuaki Hamamoto

Inventor： Kazuaki Hamamoto

IPC: H01L29/82

CPC classification number: B81B7/0029 ,  B81B2201/0292 ,  B81B2203/0127

Abstract: In a semiconductor sensor having a membrane structure, the destruction of the membrane caused by the expansion or contraction of a fluid within a hollow part formed under the membrane while the sensor is in use is prevented. A semiconductor sensor 10 comprising a substrate 30 and a membrane 20 formed on the top surface thereof, in which the bottom of the substrate 30 and a mounting surface 50 on which the sensor 10 is mounted are bonded, has pressure difference adjusting means 22a to 22c for eliminating the difference in pressure of a fluid between an inside and an outside of a hollow part 34 while the sensor is in use.

Abstract translation: 在具有膜结构的半导体传感器中，防止了在传感器使用时在膜下方形成的中空部内的流体的膨胀或收缩引起的膜的破坏。 半导体传感器10包括基板30和形成在其顶表面上的膜20，其中基板30的底部和安装有传感器10的安装表面50接合，具有压力差调节装置22A至 22c，用于消除传感器在使用中的中空部34的内部和外部之间的流体的压力差。

公开(公告)号：US07094622B1

公开(公告)日：2006-08-22

申请号：US10648927

申请日：2003-08-27

Applicant: Tianhong Cui ,  Jing Wang ,  Yongjun Zhao

Inventor： Tianhong Cui ,  Jing Wang ,  Yongjun Zhao

IPC: H01L21/00

CPC classification number: B81C99/0085 ,  B81B2201/0292 ,  B81C2203/038 ,  G01P15/0802 ,  G01P15/0894

Abstract: A process for fabricating a polymer based circuit by the following steps. A mold of a design is formed through a lithography process. The design is transferred to a polymer substrate through a hot embossing process. A metal layer is then deposited over at least part of said design and at least one electrical lead is connected to said metal layer.

Abstract translation: 一种通过以下步骤制造基于聚合物的电路的方法。 通过光刻工艺形成设计的模具。 该设计通过热压花加工转移到聚合物基材上。 然后在所述设计的至少一部分上沉积金属层，并且至少一个电引线连接到所述金属层。

公开(公告)号：US20060008936A1

公开(公告)日：2006-01-12

申请号：US11172787

申请日：2005-07-05

Applicant: Makoto Asai

Inventor： Makoto Asai

IPC: H01L21/00 ,  H01L21/30

CPC classification number: B81C1/00142 ,  B81B2201/0292 ,  B81B2203/0118 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

Abstract: A method for manufacturing a semiconductor physical quantity sensor is provided. The sensor includes a multi-layered substrate, a cavity, a groove, a movable portion and a fixed portion. The multi-layered substrate includes a support substrate, an embedded insulation film, and a semiconductor layer. The method includes the steps of: preparing the multi-layered substrate having a sacrifice layer embedded in the semiconductor layer so that the sacrifice layer is disposed at a cavity-to-be-formed portion; forming the groove from the semiconductor layer to reach the sacrifice layer; and selectively etching the sacrifice layer from a bottom of the groove to form a cavity.

Abstract translation: 提供一种半导体物理量传感器的制造方法。 传感器包括多层基板，空腔，凹槽，可移动部分和固定部分。 多层基板包括支撑基板，嵌入式绝缘膜和半导体层。 该方法包括以下步骤：制备具有嵌入在半导体层中的牺牲层的多层基板，使得牺牲层设置在待形成腔部分; 从半导体层形成凹槽到达牺牲层; 并且从凹槽的底部选择性地蚀刻牺牲层以形成空腔。

公开(公告)号：US20060008935A1

公开(公告)日：2006-01-12

申请号：US11169583

申请日：2005-06-30

Applicant: Makoto Asai

Inventor： Makoto Asai

IPC: H01L21/306 ,  G01P15/125

CPC classification number: B81C1/00626 ,  B81B2201/0235 ,  B81B2201/0292 ,  B81B2203/0118 ,  B81C2201/014 ,  B81C2201/019 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

Abstract: A physical quantity sensor includes: a semiconductor substrate; a cavity disposed in the substrate and extending in a horizontal direction of the substrate; a groove disposed on the substrate and reaching the cavity; a movable portion separated by the cavity and the groove so that the movable portion is movably supported on the substrate; and an insulation layer disposed on a bottom of the movable portion so that the insulation layer provides a roof of the cavity.

Abstract translation: 物理量传感器包括：半导体衬底; 设置在所述基板中并在所述基板的水平方向上延伸的空腔; 设置在所述基板上并到达所述空腔的凹槽; 可移动部分，由空腔和沟槽分隔开，使得可移动部分可移动地支撑在基板上; 以及设置在所述可动部分的底部上的绝缘层，使得所述绝缘层提供所述空腔的顶部。

公开(公告)号：US5199298A

公开(公告)日：1993-04-06

申请号：US718786

申请日：1991-06-21

Applicant: Kay Y. Ng ,  Martin A. Schmidt

Inventor： Kay Y. Ng ,  Martin A. Schmidt

IPC: B81B3/00 ,  G01N11/00

CPC classification number: B81C1/00158 ,  G01N11/00 ,  B81B2201/0292 ,  B81C2201/019

Abstract: A shear stress sensor is fabricated using wafer bonding technology. The shear stress sensor is a floating element shear stress sensor designed to measure shear stresses of about 1 kPa-100 kPa over a wide range of operating conditions (temperature, humidity), as well as for a large variety of fluids. The sensor employs a silicon plate suspended about 1.4 microns above the surface of a silicon substrate by piezoresistive arms. The arms are directed parallel to the flow of interest and are loaded in tensile or compressive stress. The piezoresistive arms convert the strain to an electrical output which can be configured in a half bridge circuit with appropriate wiring. Fabrication of the sensor includes bonding a substrate silicon wafer and a device wafer which has an epitaxial silicon layer grown on top of a p+ dopant layer. The device wafer is etched back using the p+ layer as an etch stop. After selective removable of the p+ layer, ohmic contacts are formed through implantation and metalization techniques. Plasma etching of the epitaxial silicon layer releases the sensor plate. A PECVD oxide is used to define the geometric characteristics of the plate and arms and to passivate the wafer chip.

Abstract translation: 使用晶片接合技术制造剪切应力传感器。 剪切应力传感器是一种浮动元件剪切应力传感器，设计用于在宽范围的工作条件（温度，湿度）以及各种各样的流体中测量约1 kPa-100 kPa的剪切应力。 该传感器采用通过压阻臂在硅衬底的表面上方悬浮约1.4微米的硅板。 臂平行于感兴趣的流动被引导并且被加载在拉伸或压缩应力中。 压阻臂将应变转换为电气输出，该输出可以配置在具有适当接线的半桥电路中。 传感器的制造包括将衬底硅晶片和具有生长在p +掺杂剂层顶部上的外延硅层的器件晶片接合。 使用p +层作为蚀刻停止层将器件晶片回蚀刻。 在选择性去除p +层之后，通过注入和金属化技术形成欧姆接触。 外延硅层的等离子体蚀刻释放传感器板。 使用PECVD氧化物来限定板和臂的几何特性并钝化晶片芯片。