SWITCH AND METHOD FOR MANUFACTURING THE SAME, AND RELAY
    41.
    发明申请
    SWITCH AND METHOD FOR MANUFACTURING THE SAME, AND RELAY 审中-公开
    开关及其制造方法和继电器

    公开(公告)号:US20110209970A1

    公开(公告)日:2011-09-01

    申请号:US13029898

    申请日:2011-02-17

    Abstract: A switch and a relay include a contact with a smooth contacting surface. A side surface of a fixed contact faces a side surface of a movable contact. The fixed contact has an insulating layer and a base layer stacked on a fixed contact substrate, and a first conductive layer formed thereon through electrolytic plating. The side surface of the first conductive layer that faces the movable contact becomes the fixed contact (contacting surface). The movable contact has an insulating layer and a base layer stacked on the movable contact substrate, and a movable contact formed thereon through electrolytic plating. A side surface of a second conductive layer that faces the fixed contact becomes the movable contact (contacting surface). The fixed contact and the movable contact have surfaces that contact the side surfaces of the mold portion when growing the first and second conductive layers through electrolytic plating.

    Abstract translation: 开关和继电器包括具有光滑接触表面的触点。 固定触点的侧表面面对活动触点的侧表面。 固定触点具有层叠在固定接触基板上的绝缘层和基层,以及通过电解电镀形成在其上的第一导电层。 第一导电层的面对可动触点的侧表面成为固定触点(接触面)。 可动触头具有堆叠在可动触点基板上的绝缘层和基极层,以及通过电解电镀形成的可动触点。 面对固定触点的第二导电层的侧表面成为可动触头(接触面)。 固定触点和可动触点具有通过电解电镀生长第一和第二导电层时与模具部分的侧表面接触的表面。

    Methods for manufacturing MEMS sensor and thin film thereof with improved etching process
    42.
    发明授权
    Methods for manufacturing MEMS sensor and thin film thereof with improved etching process 有权
    用于制造具有改进的蚀刻工艺的MEMS传感器及其薄膜的方法

    公开(公告)号:US07998776B1

    公开(公告)日:2011-08-16

    申请号:US12910801

    申请日:2010-10-23

    Applicant: Gang Li Wei Hu

    Inventor: Gang Li Wei Hu

    Abstract: A method for manufacturing a MEMS sensor and a thin film thereof includes steps of etching a top surface of a single-crystal silicon wafer in combination of a deposition process, an isotropic DRIE process, a wet etching process and a back etching process in order to form a pressure-sensitive single-crystal silicon film, a cantilever beam, a mass block, a front chamber, a back chamber and trenches connecting the front and the back chambers. The single-crystal silicon film is prevented from etching so that the thickness thereof can be well controlled. The method of the present invention can be used to replace the traditional method which forms the back chamber and the pressure-sensitive single-crystal silicon film from the bottom surface of the silicon wafer.

    Abstract translation: MEMS传感器及其薄膜的制造方法包括以下步骤:结合沉积工艺,各向同性DRIE工艺,湿蚀刻工艺和背蚀刻工艺来蚀刻单晶硅晶片的顶表面,以便 形成压敏单晶硅膜,悬臂梁,质量块,前室,后室和连接前室和后室的沟槽。 防止单晶硅膜蚀刻,从而可以良好地控制其厚度。 本发明的方法可以用于代替从硅晶片的底表面形成后室和压敏单晶硅膜的传统方法。

    Episeal pressure sensor and method for making an episeal pressure sensor

    公开(公告)号:US06928879B2

    公开(公告)日:2005-08-16

    申请号:US10375645

    申请日:2003-02-26

    Abstract: A method for making a pressure sensor by providing a wafer including a base silicon layer, a buried sacrificial layer, and a top silicon layer. The top silicon layer is arranged over the buried sacrificial layer and the buried sacrificial layer is arranged over the base silicon layer. Etching vents through the top silicon layer to the buried sacrificial layer and removing a portion of the buried sacrificial layer. Depositing silicon to seal the vents and arranging a strain gauge or a capacitance contact on the wafer. A method for making a pressure sensor including providing a bulk wafer and depositing a sacrificial layer on the bulk wafer. Depositing silicon on the sacrificial layer and the bulk wafer to form an encapsulation layer. Etching vents through the encapsulation layer to the sacrificial layer and removing the sacrificial layer. Closing the vents with a silicon deposition and arranging a strain gauge or a capacitance contact on the encapsulation layer. A pressure sensing device including a substrate, an encapsulation layer with vents, and voids between the substrate and the encapsulation layer. A portion of the encapsulation layer above the voids forms a membrane and deposited silicon plugs fill the vents. A strain gauge or a top capacitive contact arranged on the membrane.

    Episeal pressure sensor and method for making an episeal pressure sensor
    44.
    发明申请
    Episeal pressure sensor and method for making an episeal pressure sensor 有权
    Episeal压力传感器和制造episeal压力传感器的方法

    公开(公告)号:US20050142688A1

    公开(公告)日:2005-06-30

    申请号:US11064658

    申请日:2005-02-23

    Abstract: A method for making a pressure sensor by providing a wafer including a base silicon layer, a buried sacrificial layer, and a top silicon layer. The top silicon layer is arranged over the buried sacrificial layer and the buried sacrificial layer is arranged over the base silicon layer. Etching vents through the top silicon layer to the buried sacrificial layer and removing a portion of the buried sacrificial layer. Depositing silicon to seal the vents and arranging a strain gauge or a capacitance contact on the wafer. A method for making a pressure sensor including providing a bulk wafer and depositing a sacrificial layer on the bulk wafer. Depositing silicon on the sacrificial layer and the bulk wafer to form an encapsulation layer. Etching vents through the encapsulation layer to the sacrificial layer and removing the sacrificial layer. Closing the vents with a silicon deposition and arranging a strain gauge or a capacitance contact on the encapsulation layer. A pressure sensing device including a substrate, an encapsulation layer with vents, and voids between the substrate and the encapsulation layer. A portion of the encapsulation layer above the voids forms a membrane and deposited silicon plugs fill the vents. A strain gauge or a top capacitive contact arranged on the membrane.

    Abstract translation: 一种通过提供包括基底硅层,掩埋牺牲层和顶部硅层的晶片来制造压力传感器的方法。 顶层硅层布置在掩埋牺牲层上方,掩埋牺牲层布置在基底硅层上。 蚀刻通孔通过顶部硅层到掩埋牺牲层并去除一部分掩埋牺牲层。 沉积硅以密封通风口并在晶片上布置应变计或电容接触。 一种用于制造压力传感器的方法,包括提供体晶片并在体晶片上沉积牺牲层。 在牺牲层和体晶片上沉积硅以形成封装层。 蚀刻通过封装层到达牺牲层并去除牺牲层。 用硅沉积封闭通风口,并在封装层上布置应变计或电容接触。 一种压力感测装置,包括基底,通气孔的封装层以及基底和封装层之间的空隙。 空隙之上的封装层的一部分形成膜并且沉积的硅塞填充通风口。 布置在膜上的应变计或顶部电容接触。

    Method of forming semiconductor devices through epitaxy
    45.
    发明申请
    Method of forming semiconductor devices through epitaxy 有权
    通过外延形成半导体器件的方法

    公开(公告)号:US20040121564A1

    公开(公告)日:2004-06-24

    申请号:US10328922

    申请日:2002-12-23

    Applicant: Motorola Inc.

    Inventor: Bishnu Gogoi

    CPC classification number: B81B3/001 B81C2201/0109 B81C2201/0177

    Abstract: A method for creating a semiconductor structure is provided. In accordance with the method, a semiconductor substrate (101) is provided over which is disposed a sacrificial layer (103), and which has a thin single crystal semiconductor layer (105) disposed over the sacrificial layer (103). An opening (107) is then created which extends through the semiconductor layer (105) and into the sacrificial layer (103). The semiconductor layer (105) is then epitaxially grown to a suitable device thickness, thereby resulting in a device layer. The semiconductor layer is grown such that the resulting device layer extends over the opening (107), and such that the surface of the portion of the device layer extending over the opening is single crystal silicon.

    Abstract translation: 提供了一种用于制造半导体结构的方法。 根据该方法,提供半导体衬底(101),在其上设置有牺牲层(103),并且具有设置在牺牲层(103)上方的薄单晶半导体层(105)。 然后产生延伸穿过半导体层(105)并进入牺牲层(103)的开口(107)。 然后将半导体层(105)外延生长至合适的器件厚度,由此产生器件层。 生长半导体层使得所得到的器件层在开口(107)上延伸,并且使得在开口上延伸的器件层的部分的表面是单晶硅。

    Process for making semiconductor acceleration sensor having anti-etching
layer
    47.
    发明授权
    Process for making semiconductor acceleration sensor having anti-etching layer 失效
    具有防腐蚀层的半导体加速度传感器的制造方法

    公开(公告)号:US5395802A

    公开(公告)日:1995-03-07

    申请号:US37335

    申请日:1993-03-26

    Abstract: A semiconductor acceleration transducer is fabricated so that the semiconductor beam and the piezoelectric transducing element are accurately positioned relative to each other, and the impact resistance is improved. The fabrication process comprises a wafer preparing step for forming a buried layer between a substrate of a first conductivity type and an epitaxial layer of a second conductivity type, a doping step for forming a diffusion region of the first conductivity type in the epitaxial layer, and an etching step for removing unwanted portions of the substrate and the diffusion region from the bottom of the substrate to shape the beam supporting portion serving as a seismic mass. The buried layer is formed at such a position that the shape and position of the beam is determined by the buried layer. The buried layer may be a second conductivity type layer to determine the contour of the beam by stopping the etching process or may be a first conductivity type layer which is etched away to determine the contour of the beam with its diffusion contour.

    Abstract translation: 制造半导体加速度传感器,使得半导体束和压电换能元件相对于彼此精确地定位,并且提高了抗冲击性。 制造工艺包括用于在第一导电类型的衬底和第二导电类型的外延层之间形成掩埋层的晶片准备步骤,用于在外延层中形成第一导电类型的扩散区域的掺杂步骤,以及 蚀刻步骤,用于从衬底的底部除去衬底和扩散区的不需要的部分,以形成用作抗震质量的梁支撑部分。 掩埋层形成在这样的位置,即由掩埋层决定光束的形状和位置。 掩埋层可以是第二导电类型层,以通过停止蚀刻工艺来确定光束的轮廓,或者可以是蚀刻掉的第一导电类型层,以确定具有其扩散轮廓的光束的轮廓。

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