公开(公告)号：US09174190B2

公开(公告)日：2015-11-03

申请号：US14245644

申请日：2014-04-04

Applicant: IMMUNOLIGHT, LLC. ,  DUKE UNIVERSITY

Inventor： Frederic Avery Bourke, Jr. ,  Tuan Vo-Dinh

IPC: A23L3/26 ,  A61L2/00 ,  B01J19/08 ,  B01J19/12 ,  C08J3/28 ,  C02F1/30 ,  C02F1/72 ,  A61L2/08 ,  A61L2/10 ,  A61L2/16 ,  G21K5/00 ,  A23L1/025 ,  C02F1/32 ,  A61K41/00 ,  A61N5/06 ,  A61N5/10 ,  B82Y20/00

CPC classification number: A61N5/10 ,  A23L2/50 ,  A23L3/26 ,  A23L3/263 ,  A23L3/28 ,  A23L5/32 ,  A23V2002/00 ,  A61K41/0057 ,  A61K41/0066 ,  A61L2/0011 ,  A61L2/0047 ,  A61L2/0076 ,  A61L2/082 ,  A61L2/088 ,  A61L2/10 ,  A61L2/16 ,  A61L2202/21 ,  A61L2202/22 ,  A61M1/3683 ,  A61N5/062 ,  A61N5/0624 ,  A61N2005/0661 ,  A61N2005/0662 ,  A61N2005/1087 ,  A61N2005/1089 ,  A61N2005/1098 ,  B01J19/082 ,  B01J19/085 ,  B01J19/12 ,  B01J19/123 ,  B01J19/125 ,  B01J19/127 ,  B01J19/128 ,  B01J23/50 ,  B01J23/52 ,  B01J31/0275 ,  B01J31/2295 ,  B01J35/0006 ,  B01J35/0013 ,  B01J35/004 ,  B01J37/0072 ,  B01J37/0221 ,  B01J2219/0877 ,  B01J2219/0879 ,  B01J2219/0892 ,  B01J2219/1203 ,  B01J2231/005 ,  B01J2531/005 ,  B01J2531/008 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C02F1/30 ,  C02F1/302 ,  C02F1/305 ,  C02F1/307 ,  C02F1/32 ,  C02F1/725 ,  C02F2305/10 ,  C08J3/24 ,  C08J3/28 ,  C08J7/18 ,  C08J2300/00 ,  C09D201/00 ,  C09J5/00 ,  C09J201/00 ,  C09J2205/31 ,  C12H1/06 ,  G02B5/008 ,  G21K5/00 ,  Y02W10/37 ,  Y10S977/774 ,  Y10S977/777 ,  Y10S977/896 ,  Y10S977/915 ,  Y10T156/10

Abstract: A method and a system for producing a change in a medium disposed in an artificial container. The method places in a vicinity of the medium at least one of a plasmonics agent and an energy modulation agent. The method applies an initiation energy through the artificial container to the medium. The initiation energy interacts with the plasmonics agent or the energy modulation agent to directly or indirectly produce the change in the medium. The system includes an initiation energy source configured to apply an initiation energy to the medium to activate the plasmonics agent or the energy modulation agent.

Abstract translation: 一种用于产生设置在人造容器中的介质的变化的方法和系统。 该方法在介质附近放置等离子体激元和能量调节剂中的至少一种。 该方法将引发能量通过人造容器施加到介质。 起始能量与等离子体激元试剂或能量调节剂相互作用直接或间接地产生介质中的变化。 该系统包括引发能量源，其被配置为向介质施加起始能量以激活等离子体激元试剂或能量调节剂。

公开(公告)号：US20150267085A1

公开(公告)日：2015-09-24

申请号：US14416638

申请日：2013-06-27

Applicant: SHENZHEN MOMA TECHNOLOGY CO., LTD.

Inventor： Xinyue Xia ,  Zhongfei Xi ,  Aiwen Ge ,  Yong Ye ,  Shoucheng Yang ,  Xingyang Hua ,  Yunyao Zhou

IPC: C09J7/02 ,  B05D3/00

CPC classification number: B05D3/007 ,  B05D3/002 ,  C08G77/20 ,  C08J7/047 ,  C08J2383/04 ,  C08J2483/04 ,  C08L83/04 ,  C09J7/401 ,  C09J183/04 ,  C09J201/00 ,  C09J2201/606 ,  C09J2483/005 ,  Y10T428/266 ,  Y10T428/2852 ,  C08L83/00

Abstract: Disclosed is a heavy-release force release film having surface microviscosity and a preparation method thereof A release layer of the release film comprises: by mass, 10 to 25 parts of vinyl silicone oil, 0.5 to 5 parts of a cross-linking agent, 15 to 40 parts of silicon resin, 25 to 60 parts of a pressure-sensitive adhesive, 1 to 6 parts of a curing agent, and 30 to 60 parts of a diluent. The preparation method comprises: removing water, static electricity, dust and foreign matters on a surface of a substrate; uniformly stirring vinyl silicone oil, the cross-linking agent, the pressure-sensitive adhesive, silicon resin and the diluent according to the above mass part ratio; adding the curing agent into the mixture and stirring; coating the release agent on a processed surface of the substrate, drying and carrying out rolling-up.

Abstract translation: 公开了具有表面微粘度的重型释放力释放膜及其制备方法。脱模膜的剥离层包括：将10〜25重量份的乙烯基硅油，0.5〜5重量份的交联剂，15重量份 至40份硅树脂，25至60份压敏粘合剂，1至6份固化剂和30至60份稀释剂。 该制备方法包括：在基材表面除去水，静电，灰尘和异物; 根据上述质量份数均匀搅拌乙烯基硅油，交联剂，压敏粘合剂，硅树脂和稀释剂; 将固化剂加入混合物中并搅拌; 将脱模剂涂布在基材的经处理的表面上，干燥并进行卷起。

公开(公告)号：US20150266279A1

公开(公告)日：2015-09-24

申请号：US14661673

申请日：2015-03-18

Applicant: CORNING PRECISION MATERIALS CO., LTD.

Inventor： Hae-Deuk Jeong ,  Eun-Jeong Shin ,  Sangku Moon

IPC: B32B27/08 ,  C09J7/00 ,  B32B27/18

CPC classification number: B32B27/08 ,  B32B7/12 ,  B32B27/18 ,  B32B27/205 ,  B32B27/306 ,  B32B27/308 ,  B32B27/32 ,  B32B37/15 ,  B32B37/153 ,  B32B2305/30 ,  B32B2307/412 ,  B32B2307/584 ,  B32B2307/7265 ,  B32B2307/728 ,  B32B2307/73 ,  B32B2405/00 ,  B32B2457/20 ,  B32B2571/00 ,  C08K7/16 ,  C09J7/22 ,  C09J201/00 ,  C09J2201/606 ,  C09J2203/318 ,  C09J2205/106 ,  Y10T428/249983 ,  Y10T428/28

Abstract: A protective film includes an adhesive layer containing a first synthetic resin, and a non-adhesive layer containing a second synthetic resin and micro-beads made of a polymer, the micro-beads being distributed in the second synthetic resin. The adhesive layer and the non-adhesive layer are laminated on each other.

Abstract translation: 保护膜包括含有第一合成树脂的粘合剂层和含有第二合成树脂的非粘合层和由聚合物制成的微珠，所述微珠分布在第二合成树脂中。 粘合剂层和非粘合层彼此层压。

公开(公告)号：US20150217532A1

公开(公告)日：2015-08-06

申请号：US14421001

申请日：2013-07-26

Applicant: Toray Industries, Inc.

Inventor： Emi Kuraseko ,  Susumu Takada ,  Motoyuki Suzuki ,  Shotaro Tanaka

IPC: B32B3/30 ,  B32B38/10 ,  B32B7/12 ,  B32B37/00

CPC classification number: B32B3/30 ,  B32B3/28 ,  B32B7/12 ,  B32B27/00 ,  B32B37/025 ,  B32B38/10 ,  B32B2307/536 ,  B32B2311/005 ,  B32B2457/00 ,  B32B2457/12 ,  B32B2457/20 ,  B32B2551/00 ,  C09J201/00 ,  Y10T428/24983 ,  Y10T428/265 ,  Y10T428/2848

Abstract: A transfer film having a transfer layer disposed on a support film provided with the concave-convex structure, wherein the transfer layer includes a shape retaining layer and an adhesive layer, both the shape retaining layer and the adhesive layer containing a condensation product of a metal alkoxide, and the support film, the shape retaining layer, and the adhesive layer being disposed in this order.

Abstract translation: 一种转印膜，其具有设置在具有凹凸结构的支撑膜上的转印层，其中所述转印层包括形状保持层和粘合剂层，所述形状保持层和所述粘合剂层都包含金属的缩合产物 醇盐和支撑膜，形状保持层和粘合剂层按此顺序设置。

公开(公告)号：US20150184032A1

公开(公告)日：2015-07-02

申请号：US14641656

申请日：2015-03-09

Applicant: FUJIFILM Corporation

Inventor： Yu IWAI ,  Ichiro KOYAMA

IPC: C09J4/00 ,  H01L21/306 ,  C09J101/14 ,  C09J125/06 ,  C09J101/12 ,  H01L21/304 ,  H01L21/683

CPC classification number: C09J4/00 ,  C09J101/00 ,  C09J101/08 ,  C09J101/10 ,  C09J101/12 ,  C09J101/14 ,  C09J101/26 ,  C09J125/06 ,  C09J201/00 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/31133 ,  H01L21/6835 ,  H01L21/6836 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  Y10T428/28

Abstract: By a temporary adhesive for production of semiconductor device containing (A) a polymer compound having a thermal decomposition initiation temperature of 250° C. or more, and (B) a radical polymerizable monomer, and an adhesive support and a production method of semiconductor device using the same, a temporary adhesive for production of semiconductor device, which can temporarily support a member to be processed (for example, a semiconductor wafer) with a high adhesive force even under high temperature condition (for example, at 100° C.) when the member to be processed is subjected to a mechanical or chemical processing, which reduces a problem of generation of gas therefrom in the temporary support even under high temperature condition, and which can easily release the temporary support for the member processed without imparting damage to the member processed, and an adhesive support and a production method of semiconductor device using the same can be provided.

Abstract translation: 通过使用含有（A）热分解开始温度为250℃以上的高分子化合物和（B）自由基聚合性单体的半导体装置的临时粘合剂，以及粘合剂支持体和半导体装置的制造方法 使用它们，即使在高温条件下（例如，在100℃）下也可以以高粘合力临时支撑待处理的部件（例如，半导体晶片）的用于生产半导体器件的临时粘合剂。 当待加工的构件经受机械或化学处理时，即使在高温条件下也能在临时支撑体中减少气体产生的问题，并且能够容易地释放所加工的构件的临时支撑而不损害 可以提供加工构件，并且可以提供使用其的半导体装置的粘合剂支持体和制造方法。

公开(公告)号：US09050773B2

公开(公告)日：2015-06-09

申请号：US14052154

申请日：2013-10-11

Applicant: Nitto Denko Corporation

Inventor： Fumiteru Asai ,  Goji Shiga ,  Naohide Takamoto

IPC: B32B7/12 ,  B32B27/00 ,  B32B7/02 ,  B32B27/08 ,  B32B9/00 ,  B32B33/00 ,  B44C5/08 ,  B32B7/06 ,  C09J7/02 ,  C09J201/00 ,  H01L21/68 ,  H01L21/683 ,  H01L21/56 ,  H01L23/00

CPC classification number: B32B7/06 ,  B32B7/02 ,  B32B7/12 ,  C09J7/20 ,  C09J201/00 ,  H01L21/563 ,  H01L21/68 ,  H01L21/6836 ,  H01L24/81 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2223/54486 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/8101 ,  H01L2224/81815 ,  H01L2224/83007 ,  H01L2224/83104 ,  H01L2924/12042 ,  Y10T428/24942 ,  Y10T428/26 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00

Abstract: The present invention relates to a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material layer, a first pressure-sensitive adhesive layer and a second pressure-sensitive adhesive layer stacked in this order, and a film for semiconductor back surface stacked on the second pressure-sensitive adhesive layer of the dicing tape, in which a peel strength Y between the first pressure-sensitive adhesive layer and the second pressure-sensitive adhesive layer is larger than a peel strength X between the second pressure-sensitive adhesive layer and the film for semiconductor back surface, and in which the peel strength X is from 0.01 to 0.2 N/20 mm, and the peel strength Y is from 0.2 to 10 N/20 mm.

Abstract translation: 本发明涉及一种半导体背面用切割带一体膜，其特征在于，包括：依次层叠有基材层，第一粘合剂层和第二粘合剂层的切割带， 在第一粘合剂层和第二压敏粘合剂层之间的剥离强度Y大于切割带的第二粘合剂层上的剥离强度X的层叠在半导体背面的半导体背面的膜， 第二粘合剂层和半导体背面用膜，剥离强度X为0.01〜0.2N / 20mm，剥离强度Y为0.2〜10N / 20mm。

公开(公告)号：US20150024198A1

公开(公告)日：2015-01-22

申请号：US14506225

申请日：2014-10-03

Applicant: NITTO DENKO CORPORATION

Inventor： Masato YAMAGATA ,  Masayuki OKAMOTO ,  Kiyoe SHIGETOMI ,  Ryo KANNO

IPC: C09J133/14 ,  C09J7/02

CPC classification number: C09J133/14 ,  B32B7/12 ,  B32B27/08 ,  B32B27/283 ,  B32B27/308 ,  B32B2307/21 ,  B32B2307/412 ,  B32B2551/00 ,  C08G77/46 ,  C08L33/10 ,  C09J7/20 ,  C09J7/22 ,  C09J7/38 ,  C09J7/385 ,  C09J133/04 ,  C09J133/06 ,  C09J201/00 ,  C09J2483/00 ,  G02B1/14 ,  G02B5/30 ,  Y10T428/2891 ,  Y10T428/31663

Abstract: A pressure-sensitive adhesive composition includes: 100 parts by mass of a polymer (A) (Tg:lower than 0° C.); 0.05 to 3 parts by mass of a (meth)acrylic polymer (B) (MWB:1000≦MWB

Abstract translation: 压敏粘合剂组合物包括：100质量份聚合物（A）（Tg：低于0℃）; 0.05〜3质量份（甲基）丙烯酸系聚合物（B）（MWB：1000＆amp; MW; MWB <50000，Tg：30〜300℃） 和由以下通式（C1）〜（C3）中的任一个表示的具有聚氧化烯链的有机聚硅氧烷化合物（C）。 [在（C1）〜（C3）中，R1为一价有机基团，R2〜R4各自为亚烷基，R5为氢或有机基，a和b分别为0〜1000的整数 但是，它们一次不是0）; 在（C1）中，m和n分别为0〜1000的整数（但一次不为0）; 和（C2）和（C3）中，m为1〜2000的整数。]

公开(公告)号：US20140134307A1

公开(公告)日：2014-05-15

申请号：US14157039

申请日：2014-01-16

Applicant: IMMUNOLIGHT, LLC.

Inventor： Frederic A. BOURKE, JR.

IPC: A61L2/10 ,  C02F1/30 ,  C02F1/32 ,  C08J3/28 ,  A23L1/025

CPC classification number: A61N5/10 ,  A23L2/50 ,  A23L3/26 ,  A23L3/263 ,  A23L3/28 ,  A23L5/32 ,  A23V2002/00 ,  A61K41/0057 ,  A61K41/0066 ,  A61L2/0011 ,  A61L2/0047 ,  A61L2/0076 ,  A61L2/082 ,  A61L2/088 ,  A61L2/10 ,  A61L2/16 ,  A61L2202/21 ,  A61L2202/22 ,  A61M1/3683 ,  A61N5/062 ,  A61N5/0624 ,  A61N2005/0661 ,  A61N2005/0662 ,  A61N2005/1087 ,  A61N2005/1089 ,  A61N2005/1098 ,  B01J19/082 ,  B01J19/085 ,  B01J19/12 ,  B01J19/123 ,  B01J19/125 ,  B01J19/127 ,  B01J19/128 ,  B01J23/50 ,  B01J23/52 ,  B01J31/0275 ,  B01J31/2295 ,  B01J35/0006 ,  B01J35/0013 ,  B01J35/004 ,  B01J37/0072 ,  B01J37/0221 ,  B01J2219/0877 ,  B01J2219/0879 ,  B01J2219/0892 ,  B01J2219/1203 ,  B01J2231/005 ,  B01J2531/005 ,  B01J2531/008 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C02F1/30 ,  C02F1/302 ,  C02F1/305 ,  C02F1/307 ,  C02F1/32 ,  C02F1/725 ,  C02F2305/10 ,  C08J3/24 ,  C08J3/28 ,  C08J7/18 ,  C08J2300/00 ,  C09D201/00 ,  C09J5/00 ,  C09J201/00 ,  C09J2205/31 ,  C12H1/06 ,  G02B5/008 ,  G21K5/00 ,  Y02W10/37 ,  Y10S977/774 ,  Y10S977/777 ,  Y10S977/896 ,  Y10S977/915 ,  Y10T156/10

Abstract: A method and a system for producing a change in a medium. The method places in a vicinity of the medium at least one energy modulation agent. The method applies an initiation energy to the medium. The initiation energy interacts with the energy modulation agent to directly or indirectly produce the change in the medium. The system includes an initiation energy source configured to apply an initiation energy to the medium to activate the energy modulation agent.

Abstract translation: 一种用于产生介质变化的方法和系统。 该方法在介质附近放置至少一种能量调节剂。 该方法对介质施加引发能量。 引发能与能量调节剂相互作用直接或间接产生介质中的变化。 该系统包括引发能量源，其被配置为向介质施加引发能量以激活能量调节剂。

公开(公告)号：US20140037923A1

公开(公告)日：2014-02-06

申请号：US14052154

申请日：2013-10-11

Applicant: NITTO DENKO CORPORATION

Inventor： Fumiteru ASAI ,  Goji Shiga ,  Naohide TAKAMOTO

IPC: B32B7/06 ,  B32B7/12 ,  B32B7/02

CPC classification number: B32B7/06 ,  B32B7/02 ,  B32B7/12 ,  C09J7/20 ,  C09J201/00 ,  H01L21/563 ,  H01L21/68 ,  H01L21/6836 ,  H01L24/81 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2223/54486 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/8101 ,  H01L2224/81815 ,  H01L2224/83007 ,  H01L2224/83104 ,  H01L2924/12042 ,  Y10T428/24942 ,  Y10T428/26 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00

Abstract: The present invention relates to a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material layer, a first pressure-sensitive adhesive layer and a second pressure-sensitive adhesive layer stacked in this order, and a film for semiconductor back surface stacked on the second pressure-sensitive adhesive layer of the dicing tape, in which a peel strength Y between the first pressure-sensitive adhesive layer and the second pressure-sensitive adhesive layer is larger than a peel strength X between the second pressure-sensitive adhesive layer and the film for semiconductor back surface, and in which the peel strength X is from 0.01 to 0.2 N/20 mm, and the peel strength Y is from 0.2 to 10 N/20 mm.

Abstract translation: 本发明涉及一种半导体背面用切割带一体膜，其特征在于，包括：依次层叠有基材层，第一粘合剂层和第二粘合剂层的切割带， 在第一粘合剂层和第二压敏粘合剂层之间的剥离强度Y大于切割带的第二粘合剂层上的剥离强度X的层叠在半导体背面的半导体背面的膜， 第二粘合剂层和半导体背面用膜，剥离强度X为0.01〜0.2N / 20mm，剥离强度Y为0.2〜10N / 20mm。

公开(公告)号：US20100120229A1

公开(公告)日：2010-05-13

申请号：US12594634

申请日：2008-03-31

Applicant: Yuuki Nakamura ,  Tsutomu Kitakatsu ,  Youji Katayama ,  Keiichi Hatakeyama

Inventor： Yuuki Nakamura ,  Tsutomu Kitakatsu ,  Youji Katayama ,  Keiichi Hatakeyama

IPC: H01L21/78 ,  B32B7/10

CPC classification number: C09J201/00 ,  B23K26/364 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50 ,  B28D5/0082 ,  H01L21/67132 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/73 ,  H01L24/83 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2224/274 ,  H01L2224/29006 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/92247 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01077 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  Y10T428/28 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512

Abstract: There is provided a method that allows semiconductor chips to be obtained from a semiconductor wafer at high yield, while sufficiently inhibiting generation of chip cracks and burrs. The method for manufacturing a semiconductor chip comprises a step of preparing a laminated body having a semiconductor wafer, an adhesive film for a semiconductor and dicing tape laminated in that order, the semiconductor wafer being partitioned into multiple semiconductor chips and notches being formed from the semiconductor wafer side so that at least a portion of the adhesive film for a semiconductor remains uncut in its thickness direction, and a step of stretching out the dicing tape in a direction so that the multiple semiconductor chips are separated apart, to separate the adhesive film for a semiconductor along the notches. The adhesive film for a semiconductor has a tensile breaking elongation of less than 5% and the tensile breaking elongation of less than 110% of the elongation at maximum load.

Abstract translation: 提供了一种允许以高产率从半导体晶片获得半导体芯片的方法，同时充分抑制了芯片裂纹和毛刺的产生。 制造半导体芯片的方法包括制备具有半导体晶片的层叠体，半导体用粘合膜和切割带，其顺序层叠，将半导体晶片划分成多个半导体芯片，并由半导体形成沟槽 使得至少一部分用于半导体的粘合膜在其厚度方向上保持未切割，并且在使多个半导体芯片分开的方向上伸出切割带的步骤，以分离用于 沿着凹口的半导体。 半导体用粘合膜的拉伸断裂伸长率小于5％，拉伸断裂伸长率小于最大载荷下伸长率的110％。