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    Teramos-terahertz thermal sensor and focal plane array
    41.
    发明授权
    Teramos-terahertz thermal sensor and focal plane array 有权
    太平洋太赫兹热传感器和焦平面阵列

    公开(公告)号：US08759776B2

    公开(公告)日：2014-06-24

    申请号：US13141694

    申请日：2009-12-22

    Applicant: Yael Nemirovsky

    Inventor： Yael Nemirovsky

    IPC: G01J5/02 ,  G01T1/24

    CPC classification number: G01J5/20 ,  G01J1/4228 ,  G01J5/024

    Abstract: A TeraMOS sensor based on a CMOS-SOI-MEMS transistor, thermally isolated by the MEMS post-processing, designed specifically for the detection of THz radiation which may be directly integrated with the CMOS-SOI readout circuitry, in order to achieve a breakthrough in performance and cost. The TeraMOS sensor provides a low-cost, high performance THz passive or active imaging system (roughly in the range of 0.5-1.5 THz) by combining several leading technologies: Complementary Metal Oxide Semiconductor (CMOS)-Silicon on Insulator (SOI), Micro Electro Mechanical Systems (MEMS) and photonics. An array of TeraMOS sensors, integrated with readout circuitry and driving and supporting circuitry provides a monolithic focal plane array or imager. This imager is designed in a commercial CMOS-SOI Fab and the MEMS micromachining is provided as post-processing step in order to reduce cost. Thus the CMOS transistors and technology provide the sensors as well as the signal processing and additional readout circuitry both in the pixels as well as around the sensor array.

    Abstract translation: 基于CMOS-SOI-MEMS晶体管的TeraMOS传感器，通过MEMS后处理热隔离，专门用于检测可与CMOS-SOI读出电路直接集成的THz辐射，以实现突破 性能和成本。 TeraMOS传感器通过组合几种领先的技术，提供了低成本，高性能的THz无源或有源成像系统（大致在0.5-1.5 THz范围内）：互补金属氧化物半导体（CMOS） - 绝缘体（SOI），微型 机电系统（MEMS）和光子学。 与读出电路和驱动和支持电路集成的一系列TeraMOS传感器提供单片焦平面阵列或成像器。 该成像器设计在商业CMOS-SOI Fab中，并且MEMS微加工作为后处理步骤提供以降低成本。 因此，CMOS晶体管和技术在像素以及传感器阵列周围提供传感器以及信号处理和附加读出电路。

    Sensors Incorporating Freestanding Carbon NanoStructures
    44.
    发明申请
    Sensors Incorporating Freestanding Carbon NanoStructures 审中-公开
    包含独立碳纳米结构的传感器

    公开(公告)号：US20130256627A1

    公开(公告)日：2013-10-03

    申请号：US12490484

    申请日：2009-06-24

    Applicant: Himanshu Jain ,  Venkataraman Swaminathan ,  Jiri Cech

    Inventor： Himanshu Jain ,  Venkataraman Swaminathan ,  Jiri Cech

    IPC: H01L31/028 ,  H01L31/18

    CPC classification number: H01L31/028 ,  B82Y10/00 ,  G01J5/023 ,  G01J5/024 ,  G01J5/0853 ,  G01J5/20 ,  H01L27/305 ,  H01L31/1804 ,  H01L51/0048

    Abstract: Sensors for detecting IR radiation, UV radiation, X-Rays, light, gas, and chemicals. The sensors herein incorporate freestanding carbon nanostructures, such as single-walled carbon nanotubes (“SWCNT”), atomically thin carbon sheets having a thickness of about between 1 atom and about 5 atoms (“graphene”), and combinations thereof. The freestanding carbon nanostructures are suspended above a substrate by a plurality of conductors, each conductor electrically connected to the carbon nanostructure. In one method of manufacture, a resonance chamber is formed under the carbon nanostructure by etching of the substrate, yielding a sensor wherein the resonance chamber is bounded by at least the substrate and the carbon nanostructure.

    Abstract translation: 用于检测红外辐射，紫外线辐射，X射线，光，气体和化学物质的传感器。 本文中的传感器包括独立的碳纳米结构，例如单壁碳纳米管（“SWCNT”），具有约1原子和约5个原子之间的厚度的原子薄碳片（“石墨烯”）及其组合。 独立的碳纳米结构通过多个导体悬挂在基板上方，每个导体电连接到碳纳米结构。 在一种制造方法中，通过蚀刻基板在碳纳米结构下形成共振室，产生传感器，其中共振室至少由基底和碳纳米结构界定。

    Bolometer-type THz wave detector
    45.
    发明授权
    Bolometer-type THz wave detector 有权
    分光光度计型太赫兹波检测器

    公开(公告)号：US08541742B2

    公开(公告)日：2013-09-24

    申请号：US13422120

    申请日：2012-03-16

    Applicant: Seiji Kurashina ,  Masaru Miyoshi

    Inventor： Seiji Kurashina ,  Masaru Miyoshi

    IPC: G01J5/20

    CPC classification number: G01J5/045 ,  G01J5/0215 ,  G01J5/0225 ,  G01J5/024 ,  G01J5/06 ,  G01J5/0853 ,  G01J5/20

    Abstract: The bolometer-type THz wave detector according to the present invention has a thermal isolation structure in which a temperature detecting portion including a bolometer thin film connected to electrical wirings is supported in a state of being raised from the substrate by a supporting portion including the electrical wirings connected to a Read-out integrated circuit formed in a substrate, and the detector comprises a reflective film formed on the substrate, an absorbing film formed on the front surface or back surface or at an inner position in the temperature detecting portion , whereby an optical resonant structure is formed by the reflective film and the absorbing film, and a dielectric film formed on the reflective film. The dielectric film thickness f is set so that air gap between an upper surface of the dielectric film and a lower surface of the temperature detecting portion is smaller than 8 μm.

    Abstract translation: 根据本发明的辐照热计式太赫兹波检测器具有热隔离结构，其中包括与电气布线连接的测辐射热计薄膜的温度检测部分通过包括电气的支撑部分从基板升起的状态被支撑 连接到形成在基板中的读出集成电路的布线，检测器包括形成在基板上的反射膜，形成在温度检测部分的前表面或后表面或内部位置的吸收膜，由此 光学谐振结构由反射膜和吸收膜形成，并且在反射膜上形成电介质膜。 电介质膜厚度f设定为电介质膜的上表面与温度检测部的下表面之间的气隙小于8μm。

    PYROELECTRIC INFRARED DETECTING DEVICE, AND METHOD FOR REPLACING PYROELECTRIC ELEMENT IN PYROELECTRIC INFRARED DETECTING DEVICE
    46.
    发明申请
    PYROELECTRIC INFRARED DETECTING DEVICE, AND METHOD FOR REPLACING PYROELECTRIC ELEMENT IN PYROELECTRIC INFRARED DETECTING DEVICE 有权
    大电子红外检测装置及其替代光电红外检测装置中的光电元件的方法

    公开(公告)号：US20130234026A1

    公开(公告)日：2013-09-12

    申请号：US13825798

    申请日：2011-09-20

    Applicant: Shigemi Fujiwara

    Inventor： Shigemi Fujiwara

    IPC: G01J5/34

    CPC classification number: G01J5/34 ,  G01J1/0403 ,  G01J5/0205 ,  G01J5/0225 ,  G01J5/023 ,  G01J5/024

    Abstract: While conductive adhesives 60 are provided between element electrodes of a pyroelectric element 10 and board electrodes of an installation board 20, the conductive adhesives 60 are hardened to connect between the element electrodes of the pyroelectric element 10 and the board electrodes of the installation board 20. The conductive adhesives 60 include epoxy resin and, after hardened, have 4 B to 7 H, both inclusive, of pencil hardness as their hardness on JIS K 5600-5-4 (ISO 15184) standard basis. If the pyroelectric element 10 is broken down, the hardened conductive adhesives 60 are impacted or are cut by using a cutter to take off the pyroelectric element 10 from the installation board 20.

    Abstract translation: 虽然导电粘合剂60设置在热电元件10的元件电极和安装板20的板电极之间，导电粘合剂60被硬化以在热电元件10的元件电极和安装板20的基板电极之间连接。 导电粘合剂60包括环氧树脂，并且在硬化之后，具有铅笔硬度的4 B至7 H，其硬度为JIS K 5600-5-4（ISO 15184）标准的硬度。 如果热电元件10断裂，则通过使用切割器将硬化的导电粘合剂60冲击或切割，以从安装板20中取出热电元件10。

    Post-supported microbolometer pixel
    50.
    发明授权
    Post-supported microbolometer pixel 有权
    后支持的微光度计像素

    公开(公告)号：US08426818B2

    公开(公告)日：2013-04-23

    申请号：US12303125

    申请日：2008-02-01

    Applicant: Richard J Blackwell, Jr. ,  Jeannie Geneczko ,  Tuyet Bach ,  Daniel J O'Donnell

    Inventor： Richard J Blackwell, Jr. ,  Jeannie Geneczko ,  Tuyet Bach ,  Daniel J O'Donnell

    IPC: G01J5/20

    CPC classification number: G01J5/20 ,  G01J5/02 ,  G01J5/023 ,  G01J5/024

    Abstract: A post-supported bolometer pixel and a process for manufacturing it comprising the steps of depositing a sacrificial layer over a substrate with readout integrated circuit pads that connect to the integrated circuit; forming vias through the sacrificial layer to the metal pads connecting to the readout integrated circuit; filling the vias with metal and polishing said metal to the surface of the sacrificial layer; forming microbolometer pixel layers over the filled vias and sacrificial layer; and removing the sacrificial layer to leave a post-supported pixel.

    Abstract translation: 后支撑测辐照计像素及其制造方法包括以下步骤：在衬底上沉积牺牲层，其具有连接到集成电路的读出的集成电路焊盘; 通过牺牲层将通孔形成到连接到读出集成电路的金属焊盘; 用金属填充通孔并将所述金属抛光到牺牲层的表面; 在填充的通孔和牺牲层上形成微测辐射计像素层; 并去除牺牲层以留下后支撑像素。

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