Abstract:
In order to provide a stage apparatus with high speed stability in addition to being able to achieve positioning with a high degree of accuracy, and a sample observation apparatus, such as an optical microscope and a scanning electron microscope, including the stage apparatus, the stage apparatus and the sample observation apparatus of the present invention correct a command voltage value of standard waveform data or an output timing of a command voltage value such that a difference between a first time history response and a second time history response is reduced to zero, the first time history response for displacement or speed when the stage mechanism is driven with use of the standard waveform data showing the command voltage value at each predetermined time and the second time history response for displacement or speed when a speed of the stage mechanism is constant, to be set as drive waveform data to be outputted to a drive unit of the stage mechanism.
Abstract:
The present invention provides apparatuses to inspect small particles on the surface of a sample such as wafer and mask. The apparatuses provide both high detection efficiency and high throughput by forming Dark-field BSE images. The apparatuses can additionally inspect physical and electrical defects on the sample surface by form SE images and Bright-field BSE images simultaneously. The apparatuses can be designed to do single-beam or even multiple single-beam inspection for achieving a high throughput.
Abstract:
The present invention provides apparatuses to inspect small particles on the surface of a sample such as wafer and mask. The apparatuses provide both high detection efficiency and high throughput by forming Dark-field BSE images. The apparatuses can additionally inspect physical and electrical defects on the sample surface by form SE images and Bright-field BSE images simultaneously. The apparatuses can be designed to do single-beam or even multiple single-beam inspection for achieving a high throughput.
Abstract:
In accordance with an embodiment, an inspection apparatus includes an electron beam applying unit, a voltage applying unit, a substantially flat component with a lattice pattern, and a first detector. The electron beam applying unit generates an electron beam and applies the electron beam to a sample at a first voltage. The voltage applying unit applies a second voltage to the sample. The polarity of the second voltage is opposite to that of the first voltage. The absolute value of the second voltage exceeds the absolute value of the first voltage. The component is provided at a position where the electron beam specularly reflected by the second voltage before reaching the sample is focused. The first detector detects a secondary electron generated from the component which the specularly reflected electron beam has entered and outputs a first signal.
Abstract:
An object of the present invention is to provide a method and apparatus for measuring a potential on a surface of a sample using a charged particle beam while restraining a change in the potential on the sample induced by the charged particle beam application, or detecting a compensation value for a change in a condition for the apparatus caused by the sample being electrically charged. In order to achieve the above object, the present invention provides a method and apparatus for applying a voltage to a sample so that a charged particle beam does not reach the sample (hereinafter, this may be referred to as “mirror state”) in a state in which the charged particle beam is applied toward the sample, and detecting information relating to a potential on the sample using signals obtained by that voltage application.
Abstract:
An inspection apparatus comprising an electron emitting unit for sequentially emitting an electron beam in the direction of an inspection area of a sample; a deceleration unit for drawing back the electron beam in the vicinity of the inspection area; an imaging unit for forming images of the drawing back electron beam on multiple different image forming conditions; an image detecting unit for capturing the electron beam that formed an image corresponding to each image forming condition; and an image processing unit for comparing the images on different image forming conditions with one another to detect a defect in the inspection area.
Abstract:
The present invention provides a mirror electron projection (MPJ) type (SEPJ type included) scanning electron beam apparatus that is capable of performing condition setup, and a method and apparatus for inspecting pattern defects with the scanning electron beam apparatus. A mirror electron projection type defect inspection apparatus, which comprises a charging device for emitting a charging electron beam, electron beam irradiation means for shedding a mirror electron projection electron beam onto an inspection region near which an electrical potential distribution is formed, detection means for detecting secondary electrons or reflected electrons generated from a surface and proximity of the specimen, and defect detection means for detecting a defect by processing a mirror image signal that is detected by the detection means, includes irradiation condition optimization means for optimizing charging electron beam irradiation conditions.
Abstract:
In scanning electron beam apparatus such as a scanning electron microscope or micro-analyser the scanning is done in at least three successive stages so that the angle of incidence of the beam on the specimen surface is constant during the scanning cycle. It can be varied at will and by rapid switching between two alternative angles and corresponding switching of the imageforming means, stereoscopic effects are obtainable.
Abstract:
The invention includes a scanning mirror microscope having a feedback control loop between target and cathode to stabilize the target current. It is then possible to obtain a quantitative plot of the target voltage by scanning an electron beam over the target surface. The invention also includes a scanning electron microscope having a feedback control loop between the target and the output of a velocity analyzer of secondary electrons emitted from the target to obtain the same quantitative plot. In either case, examination tests on semiconductor integrated circuits are made possible.
Abstract:
A particle beam system includes a particle source to produce a first beam of charged particles. The particle beam system also includes a multiple beam producer to produce a plurality of partial beams from a first incident beam of charged particles. The partial beams are spaced apart spatially in a direction perpendicular to a propagation direction of the partial beams. The plurality of partial beams includes at least a first partial beam and a second partial beam. The particle beam system further includes an objective to focus incident partial beams in a first plane so that a first region, on which the first partial beam is incident in the first plane, is separated from a second region, on which a second partial beam is incident. The particle beam system also a detector system including a plurality of detection regions and a projective system.