公开(公告)号：US08033246B2

公开(公告)日：2011-10-11

申请号：US11381842

申请日：2006-05-05

Applicant: Peter Wiedemuth ,  Markus Bannwarth ,  Lothar Wolf

Inventor： Peter Wiedemuth ,  Markus Bannwarth ,  Lothar Wolf

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H05B31/26 ,  C25B11/00 ,  C25B13/00

CPC classification number: H01J37/32045 ,  H01J37/32036 ,  H01J2237/0206

Abstract: An arc suppression arrangement suppresses arcs in a gas discharge device that is operated with an alternating voltage from a power supply. The arc suppression arrangement includes an arc suppression device and an arc identification device that controls the arc suppression device. The arc suppression device includes at least one controllable resistor that is connected in series in an electrical line that extends from an alternating voltage source to an electrode of the gas discharge device. An arc can thereby be prevented from being provided with energy.

Abstract translation: 电弧抑制装置抑制在从电源的交流电压下操作的气体放电装置中的电弧。 电弧抑制装置包括电弧抑制装置和控制灭弧装置的电弧识别装置。 电弧抑制装置包括至少一个可控电阻器，其串联连接在从交流电压源延伸到气体放电装置的电极的电线中。 由此可以防止电弧被提供能量。

公开(公告)号：US07927981B2

公开(公告)日：2011-04-19

申请号：US12411507

申请日：2009-03-26

Applicant: Minoru Imaeda ,  Yuichiro Imanishi ,  Takao Saito

Inventor： Minoru Imaeda ,  Yuichiro Imanishi ,  Takao Saito

IPC: H01L21/00 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01J37/32568 ,  C23C16/24 ,  C23C16/515 ,  C23C16/54 ,  C23C16/545 ,  H01J37/32018 ,  H01J37/32027 ,  H01J37/32045 ,  H01J37/3244

Abstract: A silicon-based thin film depositing apparatus, including a plurality of transparent electrodes disposed to face corresponding counter electrodes with a space therebetween. Subsequently, while injecting a raw material gas from raw material gas injection orifices toward the supporting electrodes and also injecting a barrier gas from barrier gas injection orifices in the same direction as the direction in which the raw material gas is injected, the gases are discharged from a gas outlet, and thereby, the pressure in a chamber is controlled to a pressure of more than 1 kPa. Then, a DC pulse voltage is applied to each counter electrode to deposit a silicon-based thin film. A DC pulse voltage is applied to perform discharge. Therefore, even in a state where the distance between the electrodes is increased, plasma can be generated efficiently, and the in-plane distribution of film thickness can be improved.

Abstract translation: 一种硅基薄膜沉积设备，包括多个透明电极，设置成面对相应的对置电极，其间具有空间。 随后，在从原料气体喷射孔向支撑电极注入原料气体的同时，从与阻止气体注入孔注入的阻挡气体沿与注入原料气体的方向相同的方向注入时，将气体从 气体出口，从而将室中的压力控制在大于1kPa的压力。 然后，将DC脉冲电压施加到每个对电极以沉积硅基薄膜。 施加直流脉冲电压进行放电。 因此，即使在电极之间的距离增加的状态下，也能有效地产生等离子体，能够提高膜厚的面内分布。

公开(公告)号：US07923377B2

公开(公告)日：2011-04-12

申请号：US12396621

申请日：2009-03-03

Applicant: Takao Saito ,  Tatsuya Terazawa

Inventor： Takao Saito ,  Tatsuya Terazawa

IPC: H01L21/31

CPC classification number: B01J19/088 ,  B01J2219/0886 ,  B01J2219/0894 ,  H01J37/32018 ,  H01J37/32027 ,  H01J37/32045 ,  H01J37/32055 ,  H01J37/32064 ,  H01J37/3244

Abstract: An amorphous carbon film forming apparatus includes a supporting electrode that is connected to ground and supports a substrate, a counter electrode that is disposed so as to face the supporting electrode and has a mixed-gas injection orifice, a chamber containing the supporting electrode and the counter electrode, and a DC pulse generator having a pulse source that applies a DC pulse voltage between the supporting electrode and the counter electrode. An amorphous carbon film is formed by supplying a mixed gas between the supporting electrode and the counter electrode such that the percentage of the acetylene gas relative to the carrier gas is 0.05% by volume or more and 10% by volume or less, and by generating plasma while a DC pulse voltage having a pulse width of 0.1 μsec or more and 5.0 μsec or less is applied to the counter electrode.

Abstract translation: 无定形碳膜形成装置包括连接到地并支撑基板的支撑电极，配置成与支撑电极相对并具有混合气体注入孔的对电极，包含支撑电极的室和 对电极和具有在支持电极和对电极之间施加DC脉冲电压的脉冲源的DC脉冲发生器。 通过在支撑电极和对电极之间提供混合气体使得乙炔气体相对于载气的百分比为0.05体积％以上且10体积％以下，并且通过产生 等离子体，同时将具有0.1μsec以上且5.0μsec以下的脉冲宽度的DC脉冲电压施加到对电极。

公开(公告)号：US07663319B2

公开(公告)日：2010-02-16

申请号：US11738491

申请日：2007-04-22

Applicant: Roman Chistyakov ,  Bassam Hanna Abraham

Inventor： Roman Chistyakov ,  Bassam Hanna Abraham

IPC: H01J7/24

CPC classification number: H01J37/32045 ,  H01J37/32009 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/3444 ,  H01J2237/0206

Abstract: A strongly-ionized plasma generator includes a chamber for confining a feed gas. An anode is positioned inside the chamber. A cathode assembly is positioned adjacent to the anode inside the chamber. An output of a pulsed power supply is electrically connected between the anode and the cathode assembly. The pulsed power supply comprising solid state switches that are controlled by micropulses generated by drivers. At least one of a pulse width and a duty cycle of the micropulses is varied so that the power supply generates a multi-step voltage waveform at the output having a low-power stage including a peak voltage and a rise time that is sufficient to generate a plasma from the feed gas and a transient stage including a peak voltage and a rise time that is sufficient to generate a more strongly-ionized plasma.

Abstract translation: 强离子化等离子体发生器包括用于限制进料气体的室。 阳极位于室内。 阴极组件邻近室内的阳极定位。 脉冲电源的输出电连接在阳极和阴极组件之间。 脉冲电源包括由驱动器产生的微脉冲控制的固态开关。 微脉冲的脉冲宽度和占空比中的至少一个被改变，使得电源在具有包括峰值电压和足够产生的峰值电压和上升时间的低功率级的输出端产生多级电压波形 来自进料气体的等离子体和包括足以产生更强电离等离子体的峰值电压和上升时间的瞬态级。

公开(公告)号：US20090246943A1

公开(公告)日：2009-10-01

申请号：US12411528

申请日：2009-03-26

Applicant: Minoru Imaeda ,  Yuichiro Imanishi ,  Takao Saito

Inventor： Minoru Imaeda ,  Yuichiro Imanishi ,  Takao Saito

IPC: H01L21/20 ,  C23C16/503

CPC classification number: H01J37/32027 ,  C23C14/566 ,  C23C16/4401 ,  C23C16/54 ,  H01J37/32018 ,  H01J37/32045 ,  H01J37/32568

Abstract: A silicon-based thin film mass-producing apparatus, including transparent electrodes placed to face in parallel to corresponding counter electrodes with a space therebetween, and silicon-based thin films are deposited on the transparent electrodes by feeding a raw material gas for depositing the silicon-based thin films into the chamber and by applying a DC pulse voltage to the counter electrodes to generate plasma. Unlike methods in which a radio frequency voltage is intermittently applied to perform discharge, a high plasma density distribution does not occur, and in-plane film thickness distribution does not occur. Furthermore, since the DC pulse voltage rises sharply, the ON period can be shortened. As a result, generation of a sheath ceases in the transient state before reaching the steady state, and the thickness of the sheath is small, which allows the space between the counter and transparent electrodes to decrease.

Abstract translation: 通过供给用于沉积硅的原料气体，在透明电极上沉积硅基薄膜质量产生装置，其包括与其间具有空间的相应对置电极平行放置的透明电极和硅基薄膜 的薄膜进入室，并通过向对电极施加DC脉冲电压以产生等离子体。 不同于间歇地施加射频电压以进行放电的方法，不会发生高等离子体密度分布，并且不会发生面内膜厚分布。 此外，由于直流脉冲电压急剧上升，因此能够缩短接通时间。 结果，在达到稳定状态之前，鞘的产生在瞬态停止，并且护套的厚度小，这允许计数器和透明电极之间的空间减小。

公开(公告)号：US20090026964A1

公开(公告)日：2009-01-29

申请号：US12177809

申请日：2008-07-22

Applicant: Hanns-Joachim Knaus

Inventor： Hanns-Joachim Knaus

IPC: H05B43/00 ,  G01R31/00

CPC classification number: G01R21/06 ,  G01R23/02 ,  H01J37/32045 ,  H02M7/003 ,  H02M7/5383 ,  H03H7/40 ,  H05B41/2806 ,  H05H1/46 ,  Y02B20/22

Abstract: For determining a wave running time between a RF source in a plasma power supply device and a load connected to the plasma power supply device, an RF pulse is transmitted forwards from the RF source to the load. The pulses are reflected by the load and transmitted backwards to the power source. A return time measured on arrival of the pulse(s) at the inverter is used to determine a wave running time.

Abstract translation: 为了确定等离子体电源装置中的RF源和连接到等离子体电源装置的负载之间的波浪运行时间，RF脉冲从RF源向负载传送。 脉冲被负载反射并向后传输到电源。 使用在逆变器上的脉冲到达时测量的返回时间来确定波浪运行时间。

公开(公告)号：US20080036402A1

公开(公告)日：2008-02-14

申请号：US11873868

申请日：2007-10-17

Applicant: Noboru Kuriyama

Inventor： Noboru Kuriyama

IPC: H05B41/02 ,  G01R31/00

CPC classification number: C23C14/564 ,  H01J37/32045 ,  H01J37/32082 ,  H01J37/32935 ,  H01J2237/0206 ,  H01L21/67069

Abstract: In a method of detecting arc discharge in a glow-discharge apparatus GD that has a high-frequency power source PS, a cutting pulse is output for time T1 to the high-frequency power source PS to stop a supply of power to the glow-discharge apparatus GD, when dVr/dt−dVf/dt increases over a first level, where Vf and Vr are a traveling-wave voltage and a reflected-wave voltage applied to the glow-discharge apparatus GD, respectively. Arc discharge is determined to have developed in the glow-discharge apparatus, when Vr/Vf increases to a second level or a higher level within a preset time To after the supply of power to the glow-discharge apparatus is stopped.

公开(公告)号：US20070069157A1

公开(公告)日：2007-03-29

申请号：US11237385

申请日：2005-09-28

Applicant: Sandeep Mehta ,  Steven Walther ,  Naushad Variam ,  Ukyo Jeong

Inventor： Sandeep Mehta ,  Steven Walther ,  Naushad Variam ,  Ukyo Jeong

IPC: H01J37/08

CPC classification number: H01J37/32045 ,  H01J37/32412 ,  H01J37/32596

Abstract: Methods and apparatus for plasma ion implantation with improved dopant profiles are provided. A plasma ion implantation system includes a process chamber, a plasma source to generate a plasma in the process chamber, a platen to hold the substrate in the process chamber and a pulse source to generate implant pulses to accelerate ions from the plasma into the substrate. In one aspect, the pulse source generates implant pulses having pulse widths that are sufficiently long to limit plasma ion implantation during a transient period at the start of each implant pulse to a small fraction of the total implanted dose. In another aspect, ions are generated in a region of the process chamber near a reference potential, such as ground, and are accelerated from the region of plasma generation to the platen. Plasma generation may be enabled after the start of each implant pulse and may be disabled before the end of each implant pulse.

Abstract translation: 提供了具有改进的掺杂剂轮廓的等离子体离子注入的方法和装置。 等离子体离子注入系统包括处理室，用于在处理室中产生等离子体的等离子体源，用于将衬底保持在处理室中的压板和用于产生注入脉冲以将离子从等离子体加速到衬底中的脉冲源。 在一个方面，脉冲源产生具有足够长的脉冲宽度的注入脉冲，以在每个注入脉冲开始时的瞬态期间将等离子体离子注入限制到总植入剂量的一小部分。 在另一方面，在处理室的附近在诸如地面的参考电位附近产生离子，并且从等离子体产生的区域加速到压板。 在每个注入脉冲开始之后，等离子体产生可以被使能，并且可以在每个注入脉冲结束之前被禁止。

公开(公告)号：US682690A

公开(公告)日：1901-09-17

申请号：US1900011605

申请日：1900-04-05

Applicant: HEWITT PETER COOPER

Inventor： HEWITT PETER COOPER

CPC classification number: H01J37/32045 ,  B23K11/248

公开(公告)号：US12087546B2

公开(公告)日：2024-09-10

申请号：US17365081

申请日：2021-07-01

Applicant: Advanced Energy Industries, Inc.

Inventor： Fabio Vicinanza

IPC: H02M7/217 ,  H01F7/06 ,  H01F21/08 ,  H01J37/32

CPC classification number: H01J37/32174 ,  H01F7/064 ,  H01F21/08 ,  H01J37/32027 ,  H01J37/32045 ,  H01J37/32146 ,  H01J37/32183 ,  H02M7/217 ,  H01J2237/3321

Abstract: This disclosure describes systems, methods, and apparatus for waveform control, comprising: a power supply having an input terminal, and at least one output terminal for coupling to a load; a controller; a variable inductor coupled to at least one of the output terminals, the variable inductor comprising a first magnetic core having a plurality of arms, including at least a first inductor arm and a first control arm, wherein an inductance winding having one or more turns is wound around the first inductor arm, and wherein a first control winding comprising one or more turns is wound around the first control arm; and a DC current source coupled to the first control arm and the controller, the controller configured to adjust a DC bias applied by the DC current source to the first control arm to control an output waveform at the at least one output terminal.