公开(公告)号：US20180044800A1

公开(公告)日：2018-02-15

申请号：US15550630

申请日：2016-02-13

Applicant: Entegris, Inc.

Inventor： Bryan C. Hendrix ,  David W. Peters ,  Weimin Li ,  Carlo Waldfried ,  Richard A. Cooke ,  Nilesh Gunda ,  I-Kuan Lin

IPC: C23C28/04 ,  C23C16/40 ,  C23C16/455 ,  C23C14/24 ,  C23C14/50

CPC classification number: C23C28/044 ,  C23C14/243 ,  C23C14/50 ,  C23C16/042 ,  C23C16/403 ,  C23C16/404 ,  C23C16/405 ,  C23C16/4404 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/45555 ,  C23C16/56 ,  C23C28/042

Abstract: Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that is deleterious to the substrate article, structure, material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.

公开(公告)号：US09219232B2

公开(公告)日：2015-12-22

申请号：US14251475

申请日：2014-04-11

Applicant: Entegris, Inc.

Inventor： William Hunks ,  Tianniu Chen ,  Chongying Xu ,  Jeffrey F. Roeder ,  Thomas H. Baum ,  Matthias Stender ,  Philip S. H. Chen ,  Gregory T. Stauf ,  Bryan C. Hendrix

IPC: H01L21/36 ,  H01L45/00 ,  C07C251/08 ,  C07F7/00 ,  C07F7/10 ,  C07F7/28 ,  C07F9/90 ,  C07F17/00 ,  C23C16/18 ,  C23C16/30

CPC classification number: H01L45/1616 ,  C07C251/08 ,  C07F7/003 ,  C07F7/10 ,  C07F7/28 ,  C07F9/90 ,  C07F9/902 ,  C07F17/00 ,  C23C16/18 ,  C23C16/305 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683

Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

Abstract translation: 描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这些前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造 方法。 本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。

公开(公告)号：US20150318108A1

公开(公告)日：2015-11-05

申请号：US14649334

申请日：2013-09-30

Applicant: ENTEGRIS, INC.

Inventor： Bryan C. Hendrix ,  Weimin Li ,  James Anthony O'Neill

IPC: H01G4/10 ,  C23C16/44 ,  C23C16/455 ,  H01G4/01

Abstract: A high dielectric constant metal-insulator structure, including an electrode comprising NiOx wherein 1

Abstract translation: 一种高介电常数金属 - 绝缘体结构，包括一种包含NiOx的电极，其中1

公开(公告)号：US20250075314A1

公开(公告)日：2025-03-06

申请号：US18819824

申请日：2024-08-29

Applicant: ENTEGRIS, INC.

Inventor： Bryan C. Hendrix ,  Lucas B. Henderson ,  Eric Condo ,  Philip S.H. Chen

IPC: C23C16/04 ,  C23C16/40 ,  C23C16/455

Abstract: A device is provided. The device comprises a substrate having at least one structure with an aspect ratio of at least 10:1. The device comprises a film located on the at least one structure with a step coverage of at least 90%. The film comprises a metal oxide or metalloid oxide; and a concentration of less than 1×1020 hydrogen atoms per cubic centimeter as measured by SIMS. Methods for forming films on substrates and related systems and methods are also provided herein.

公开(公告)号：US12084778B2

公开(公告)日：2024-09-10

申请号：US16898149

申请日：2020-06-10

Applicant: Entegris, Inc.

Inventor： Bryan C. Hendrix ,  David W. Peters ,  Weimin Li ,  Carlo Waldfried ,  Richard A. Cooke ,  Nilesh Gunda ,  I-Kuan Lin

IPC: C23C28/04 ,  B01D39/20 ,  B01D67/00 ,  C23C14/24 ,  C23C14/50 ,  C23C16/04 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56

CPC classification number: C23C28/044 ,  B01D39/2027 ,  B01D67/00 ,  C23C14/243 ,  C23C14/50 ,  C23C16/042 ,  C23C16/403 ,  C23C16/404 ,  C23C16/405 ,  C23C16/4404 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/45555 ,  C23C16/56 ,  C23C28/042 ,  B01D2239/0478 ,  B01D2239/1216

Abstract: Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that is deleterious to the substrate article, structure, material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.

公开(公告)号：US11821087B2

公开(公告)日：2023-11-21

申请号：US16856687

申请日：2020-04-23

Applicant: ENTEGRIS, INC.

Inventor： Bryan C. Hendrix ,  Scott L Battle ,  David J. Eldridge ,  John N. Gregg ,  Jacob Thomas ,  Manuel F. Gonzales ,  Kenney R. Jordan ,  Benjamin H. Olson

IPC: C23C16/458 ,  C23C14/18 ,  H01L21/02

CPC classification number: C23C16/4583 ,  C23C14/185 ,  H01L21/02271

Abstract: A tray for a vaporization vessel that includes a tray having a side wall, a bottom plate, one or more apertures that extend through the bottom plate, and a duct that extends through and from the bottom plate. The tray configured to support a solid reagent to be vaporized. A method of assembling the tray that includes forming a first tray that has the side wall and the bottom plate. A vaporization vessel that includes one or more of the trays.

公开(公告)号：US11761081B2

公开(公告)日：2023-09-19

申请号：US16577860

申请日：2019-09-20

Applicant: ENTEGRIS, INC.

Inventor： Robert Wright, Jr. ,  Thomas H. Baum ,  Bryan C. Hendrix ,  Shawn D. Nguyen ,  Han Wang ,  Philip S. H. Chen

IPC: C23C16/455 ,  C23C16/18 ,  H01L21/02 ,  C23C16/56

CPC classification number: C23C16/45534 ,  C23C16/18 ,  C23C16/56 ,  H01L21/0228

Abstract: Described are vapor deposition methods for depositing metal films or layers onto a substrate, wherein the metal is molybdenum or tungsten; the methods involve organometallic precursor compounds that contain the metal and one or more carbon-containing ligands, and include depositing a metal layer formed from the metal of the precursor, onto a substrate, followed by introducing oxidizer to the formed metal layer.

公开(公告)号：US20230287564A1

公开(公告)日：2023-09-14

申请号：US18118300

申请日：2023-03-07

Applicant: ENTEGRIS, INC.

Inventor： Bryan C. Hendrix ,  Scott L. Battle ,  Benjamin R. Garrett ,  Carlo Waldfried ,  Gavin Richards

IPC: C23C16/44 ,  C01G41/04 ,  C01G39/00

CPC classification number: C23C16/4404 ,  C01G41/04 ,  C01G39/006

Abstract: A device which can be exposed to chemical vapors, such as a molybdenum vapor, a tungsten vapor, or any combination thereof, which has a coating covering at least a portion thereof. The coating reduces or inhibits mass change at an outer surface of the device from exposure to the vapor. In certain situations, the mass change is a mass gain, and the coating reduces or inhibits the mass gain of equal to or less than 1×10−5 g mm−2.

公开(公告)号：US11560625B2

公开(公告)日：2023-01-24

申请号：US16245791

申请日：2019-01-11

Applicant: ENTEGRIS, INC.

Inventor： Robert Wright, Jr. ,  Shuang Meng ,  Bryan C. Hendrix ,  Thomas H. Baum ,  Philip S. H. Chen

IPC: C23C16/455 ,  C23C16/32 ,  C23C16/08

Abstract: Described are vapor deposition methods for depositing molybdenum materials onto a substrate by the use of bis(alkyl-arene) molybdenum, also referred to herein as (alkyl-arene)2Mo, for example bis(ethyl-benzene) molybdenum ((EtBz)2Mo), as a precursor for such deposition, as well as structures that contain the deposited material.

公开(公告)号：US20220316055A1

公开(公告)日：2022-10-06

申请号：US17708999

申请日：2022-03-30

Applicant: ENTEGRIS, INC.

Inventor： Han Wang ,  Bryan C. Hendrix

IPC: C23C16/34 ,  C23C16/455

Abstract: The invention provides a process for the deposition of titanium silicon nitride (TiSiN) films onto a substrate, such as a substrate surface on a microelectronic device. Surprisingly, the process can be run at relatively low temperatures for the silicon precursors described herein.