公开(公告)号：US20150041928A1

公开(公告)日：2015-02-12

申请号：US14524986

申请日：2014-10-27

Applicant: SiTime Corporation

Inventor： Aaron Partridge ,  Markus Lutz ,  Pavan Gupta

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00277 ,  B81B7/0035 ,  B81B7/0058 ,  B81B7/007 ,  B81B2201/0271 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/00269 ,  B81C1/00301 ,  B81C2201/0171 ,  B81C2203/031 ,  B81C2203/036 ,  B81C2203/037 ,  B81C2203/038 ,  H01L23/051 ,  H01L41/1136 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A cavity is formed within a first substrate together with trenches that separate first and second portions of the first substrate from each other and from the remainder of the first substrate. The first portion of the first substrate is disposed within the cavity and constitutes a microelectromechanical structure, while the second portion of the substrate is disposed at least partly within the cavity and constitutes a first portion of an electrical contact. A second substrate is secured to the first substrate over the cavity to define a chamber containing the microelectromechanical structure. The second substrate has a first portion that constitutes a second portion of the electrical contact and is disposed in electrical contact with the second portion of the first substrate such that the electrical contact extends from within the chamber to an exterior of the chamber.

Abstract translation: 与第一衬底的第一和第二部分彼此分开并与第一衬底的其余部分分开的沟槽在第一衬底内形成空腔。 第一衬底的第一部分设置在空腔内并构成微机电结构，而衬底的第二部分至少部分地设置在空腔内并且构成电接触的第一部分。 第二衬底在空腔上固定到第一衬底以限定包含微机电结构的腔室。 第二基板具有构成电触点的第二部分的第一部分，并且设置成与第一基板的第二部分电接触，使得电触头从腔室内延伸到腔室的外部。

公开(公告)号：US20150036346A1

公开(公告)日：2015-02-05

申请号：US14367803

申请日：2012-12-20

Applicant: The Swatch Group Research and Development Ltd

Inventor： Thierry Hessler ,  Silvio Dalla Piazza

IPC: H03H9/19 ,  H01L41/332 ,  H03H9/215 ,  F21V17/02 ,  H01L41/047

CPC classification number: H03H9/19 ,  B23K26/53 ,  B81B2201/0271 ,  B81B2203/0118 ,  B81C1/00595 ,  B81C2201/0143 ,  F21V17/02 ,  G04B17/066 ,  G04B17/345 ,  G04C3/12 ,  G04F5/063 ,  G04G17/02 ,  H01L41/0475 ,  H01L41/332 ,  H03H9/215

Abstract: The present invention concerns a method for manufacturing a resonator in a substrate characterized in that it includes the following steps: a) modifying the structure of at least one region of the substrate in order to make said at least one region more selective; b) etching said at least one region in order to selectively manufacture said resonator.

Abstract translation: 本发明涉及一种用于在衬底中制造谐振器的方法，其特征在于其包括以下步骤：a）修改衬底的至少一个区域的结构，以便使所述至少一个区域更具选择性; b）蚀刻所述至少一个区域以选择性地制造所述谐振器。

公开(公告)号：US20150008788A1

公开(公告)日：2015-01-08

申请号：US14185160

申请日：2014-02-20

Applicant: The Royal Institution for the Advancement of Learning / McGill University

Inventor： Mourad El-Gamal ,  Frederic Nabki ,  Paul-Vahe Cicek

IPC: B81C1/00 ,  B81B7/00 ,  B81B3/00

CPC classification number: B81C1/00666 ,  B81B3/0021 ,  B81B7/008 ,  B81B2201/01 ,  B81B2201/0235 ,  B81B2201/0271 ,  B81B2201/03 ,  B81B2207/015 ,  B81B2207/03 ,  B81C1/00063 ,  B81C1/00246 ,  B81C1/00396 ,  B81C1/00587 ,  B81C2201/014 ,  B81C2201/0169 ,  B81C2201/0174 ,  B81C2203/0721 ,  B81C2203/0735

Abstract: A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience whilst also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer. The use of silicon carbide being beneficial within the formation of MEMS elements such as motors, gears, rotors, translation drives, etc where increased hardness reduces wear of such elements during operation.

Abstract translation: 提供了一种提供与硅CMOS电子器件兼容的微机电结构（MEMS）的方法。 该方法提供了将MEMS制造的集成电路的最大曝光限制在低于350℃并可能低于250℃的工艺和制造顺序，从而允许将MEMS器件直接制造到电子器件上，例如 作为Si CMOS电路。 该方法进一步提供具有多个非导电结构层的MEMS器件，例如用小的侧向间隙分离的碳化硅。 这种碳化硅结构提供增强的材料性能，增加环境和化学弹性，同时还允许利用结构层的非导电材料来实现新颖的设计。 在形成MEMS元件（例如马达，齿轮，转子，平移驱动器等）中使用碳化硅是有益的，其中增加的硬度降低了操作期间这些元件的磨损。

公开(公告)号：US08871551B2

公开(公告)日：2014-10-28

申请号：US11593404

申请日：2006-11-06

Applicant: Aaron Partridge ,  Markus Lutz ,  Pavan Gupta

Inventor： Aaron Partridge ,  Markus Lutz ,  Pavan Gupta

IPC: H01L21/58 ,  B81B7/00

CPC classification number: B81C1/00277 ,  B81B7/0035 ,  B81B7/0058 ,  B81B7/007 ,  B81B2201/0271 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/00269 ,  B81C1/00301 ,  B81C2201/0171 ,  B81C2203/031 ,  B81C2203/036 ,  B81C2203/037 ,  B81C2203/038 ,  H01L23/051 ,  H01L41/1136 ,  H01L2924/0002 ,  H01L2924/00

Abstract: There are many inventions described and illustrated herein. In one aspect, the present inventions relate to devices, systems and/or methods of encapsulating and fabricating electromechanical structures or elements, for example, accelerometer, gyroscope or other transducer (for example, pressure sensor, strain sensor, tactile sensor, magnetic sensor and/or temperature sensor), filter or resonator. The fabricating or manufacturing microelectromechanical systems of the present invention, and the systems manufactured thereby, employ wafer bonding encapsulation techniques.

Abstract translation: 这里描述和说明了许多发明。 一方面，本发明涉及包封和制造机电结构或元件的装置，系统和/或方法，例如加速度计，陀螺仪或其他换能器（例如，压力传感器，应变传感器，触觉传感器，磁传感器和 /或温度传感器），滤波器或谐振器。 本发明的制造或制造微机电系统及其制造的系统采用晶片接合封装技术。

公开(公告)号：US20140246948A1

公开(公告)日：2014-09-04

申请号：US14129908

申请日：2012-06-26

Applicant: Seung-Mok Lee

Inventor： Seung-Mok Lee

IPC: H02N1/00 ,  G01H11/06 ,  B81C1/00

CPC classification number: H02N1/00 ,  B06B1/0292 ,  B81B2201/0271 ,  B81B2207/015 ,  B81C1/00246 ,  B81C2203/031 ,  B81C2203/075 ,  G01H11/06 ,  G01N29/2406 ,  H01L29/84

Abstract: A transducer, and a method for manufacturing the transducer are provided. The transducer includes a substrate-side electrode provided in one side of an insulative substrate and an opposite plate including an opposite electrode disposed opposite to the substrate-side electrode, and which performs a function such as a reduction in impedance, conversion of capacitance, signal amplification, thereby achieving size reduction of the transducer itself. An upper plate is made of a silicon monocrystal and is arranged so as to face a substrate-side electrode. In the upper plate, an integrated circuit section which is an impurity region of an IC circuit is formed by a thermal diffusion method or an ion implantation method. By this transducer, an improvement in conversion efficiency, an improvement in productivity, and a size reduction of a mount system are achieved.

Abstract translation: 提供换能器和用于制造换能器的方法。 换能器包括设置在绝缘基板的一侧的基板侧电极和与基板侧电极相对设置的相对电极的相对板，并且其执行阻抗减小，电容转换，信号 从而实现换能器本身的尺寸减小。 上板由硅单晶制成，并与基板侧电极相对配置。 在上板中，通过热扩散法或离子注入法形成作为IC电路的杂质区域的集成电路部。 通过该传感器，实现了转换效率的提高，生产率的提高和安装系统的尺寸减小。

公开(公告)号：US08803259B2

公开(公告)日：2014-08-12

申请号：US13764558

申请日：2013-02-11

Applicant: STC.UNM

Inventor： Jingkuang Chen

IPC: H01L21/00

CPC classification number: B06B1/06 ,  A61B1/041 ,  A61B8/12 ,  A61B8/4472 ,  A61B8/4488 ,  A61B8/4494 ,  B06B1/0292 ,  B81B2201/0271 ,  B81C1/00095 ,  B81C3/008 ,  G01S15/8929 ,  Y10T29/42

Abstract: Systems, apparatus, and associated methods of forming the systems and/or apparatus may include imaging devices that may comprise multiple arrays of ultrasonic transducer elements for use in a variety of applications. These multiple arrays of ultrasonic transducer elements can be arranged to form a three-dimensional imaging device. Non-coplanar arrays of ultrasonic transducer elements can be coupled together. These imaging devices may be used as medical imaging devices. Additional apparatus, systems, and methods are disclosed.

Abstract translation: 形成系统和/或装置的系统，装置和相关联的方法可以包括可以包括用于各种应用的超声换能器元件的多个阵列的成像装置。 这些多个超声波换能器阵列阵列可被布置成形成三维成像装置。 非共面阵列的超声换能器元件可以耦合在一起。 这些成像装置可以用作医疗成像装置。 公开了附加装置，系统和方法。

公开(公告)号：US08760035B2

公开(公告)日：2014-06-24

申请号：US13436336

申请日：2012-03-30

Applicant: Toshio Tomiyoshi ,  Kazutoshi Torashima ,  Takahiro Akiyama

Inventor： Toshio Tomiyoshi ,  Kazutoshi Torashima ,  Takahiro Akiyama

IPC: H01L41/047

CPC classification number: H04R1/00 ,  B06B1/0292 ,  B81B2201/0271 ,  B81B2203/04 ,  B81C1/00626 ,  H04R2201/003

Abstract: An electromechanical transducer includes a substrate, a first electrode disposed on the substrate, and a vibration film including a membrane disposed on the first electrode with a space therebetween and a second electrode disposed on the membrane so as to oppose the first electrode. The first electrode has a surface roughness value of 6 nm RMS or less.

Abstract translation: 机电换能器包括基板，设置在基板上的第一电极以及设置在第一电极上的具有间隔的膜的振动膜和设置在膜上以与第一电极相对的第二电极。 第一电极的表面粗糙度值为6nm RMS以下。

公开(公告)号：US08716815B2

公开(公告)日：2014-05-06

申请号：US12927312

申请日：2010-11-10

Applicant: Emmanuel P. Quevy ,  Roger T. Howe

Inventor： Emmanuel P. Quevy ,  Roger T. Howe

IPC: H01L27/14

CPC classification number: B81C1/00039 ,  B81B2201/0271

Abstract: A MEMS coupler and a method to form a MEMS structure having such a coupler are described. In an embodiment, a MEMS structure comprises a member and a substrate. A coupler extends through a portion of the member and connects the member with the substrate. The member is comprised of a first material and the coupler is comprised of a second material. In one embodiment, the first and second materials are substantially the same. In one embodiment, the second material is conductive and is different than the first material. In another embodiment, a method for fabricating a MEMS structure comprises first forming a member above a substrate. A coupler comprised of a conductive material is then formed to connect the member with the substrate.

Abstract translation: 描述了MEMS耦合器和形成具有这种耦合器的MEMS结构的方法。 在一个实施例中，MEMS结构包括构件和衬底。 耦合器延伸穿过构件的一部分并将构件与衬底连接。 该构件由第一材料构成，并且该耦合器由第二材料构成。 在一个实施例中，第一和第二材料基本相同。 在一个实施例中，第二材料是导电的并且不同于第一材料。 在另一个实施例中，一种用于制造MEMS结构的方法包括首先在衬底上形成构件。 然后形成由导电材料构成的耦合器，以将该构件与衬底连接。

公开(公告)号：US08704315B2

公开(公告)日：2014-04-22

申请号：US13000650

申请日：2009-06-26

Applicant: Jeevak M. Parpia ,  Harold G. Craighead ,  Joshua D. Cross ,  Bojan Robert Ilic ,  Maxim K. Zalalutdinov ,  Jeffrey W. Baldwin ,  Brian H. Houston

Inventor： Jeevak M. Parpia ,  Harold G. Craighead ,  Joshua D. Cross ,  Bojan Robert Ilic ,  Maxim K. Zalalutdinov ,  Jeffrey W. Baldwin ,  Brian H. Houston

IPC: H01L29/82

CPC classification number: B81C1/00246 ,  B81B2201/0271 ,  Y10T29/49007

Abstract: The present invention is directed to a CMOS integrated micromechanical device fabricated in accordance with a standard CMOS foundry fabrication process. The standard CMOS foundry fabrication process is characterized by a predetermined layer map and a predetermined set of fabrication rules. The device includes a semiconductor substrate formed or provided in accordance with the predetermined layer map and the predetermined set of fabrication rules. A MEMS resonator device is fabricated in accordance with the predetermined layer map and the predetermined set of fabrication rules. The MEMS resonator device includes a micromechanical resonator structure having a surface area greater than or equal to approximately 20 square microns. At least one CMOS circuit is coupled to the MEMS resonator member. The at least one CMOS circuit is also fabricated in accordance with the predetermined layer map and the predetermined set of fabrication rules.

Abstract translation: 本发明涉及根据标准CMOS铸造制造工艺制造的CMOS集成微机械装置。 标准CMOS铸造制造工艺的特征在于预定的层图和预定的制造规则集合。 该器件包括根据预定层图形成或提供的半导体衬底以及预定的一组制造规则。 根据预定层图和预定的制造规则集合制造MEMS谐振器装置。 MEMS谐振器装置包括具有大于或等于约20平方微米的表面积的微机械谐振器结构。 至少一个CMOS电路耦合到MEMS谐振器构件。 至少一个CMOS电路也是根据预定的层映射和预定的一组制造规则制造的。

公开(公告)号：US20140103778A1

公开(公告)日：2014-04-17

申请号：US14047302

申请日：2013-10-07

Applicant: Seiko Epson Corporation

Inventor： Shogo INABA ,  Masahiro FUJII

IPC: H02N1/00

CPC classification number: H02N1/006 ,  B81B3/0013 ,  B81B2201/0271 ,  H03H3/0072 ,  H03H9/02338 ,  H03H9/2452 ,  H03H2009/02291 ,  H03H2009/02472 ,  Y10T29/49124

Abstract: A MEMS vibrator includes a wafer substrate, a fixed lower electrode (first electrode) disposed on a principal surface of the wafer substrate, a support member whose one end is fixed to the wafer substrate, and a movable upper electrode (second electrode) joined to the other end of the support member and having a region overlapping the fixed lower electrode with a gap. The support member has a reinforcing region where the thickness of the support member in a thickness direction of the wafer substrate is larger than the thickness of the movable upper electrode in the thickness direction of the wafer substrate.

Abstract translation: MEMS振子包括晶片基板，设置在晶片基板的主表面上的固定下电极（第一电极），一端固定在晶片基板上的支撑部件和可动上电极（第二电极） 支撑构件的另一端并具有与固定的下电极重叠的区域，具有间隙。 支撑构件具有加强区域，其中支撑构件在晶片衬底的厚度方向上的厚度大于可移动上电极在晶片衬底的厚度方向上的厚度。