公开(公告)号：US20100163180A1

公开(公告)日：2010-07-01

申请号：US12723176

申请日：2010-03-12

Applicant: Dan B. Millward

Inventor： Dan B. Millward

IPC: B32B3/00

CPC classification number: H01L21/02002 ,  B05D3/007 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  H01L21/3086 ,  H01L21/31144

Abstract: Methods for fabricating sublithographic, nanoscale microchannels utilizing an aqueous emulsion of an amphiphilic agent and a water-soluble, hydrogel-forming polymer, and films and devices formed from these methods are provided.

Abstract translation: 提供了利用两亲性试剂和水溶性，水凝胶形成聚合物的水性乳液制造亚光刻纳米尺寸微通道的方法，以及由这些方法形成的膜和器件。

公开(公告)号：US20100092873A1

公开(公告)日：2010-04-15

申请号：US12248219

申请日：2008-10-09

Applicant: Scott Sills ,  Dan Millward

Inventor： Scott Sills ,  Dan Millward

IPC: G03F7/20 ,  G03F1/14 ,  G03F7/038

CPC classification number: G03F7/40 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  G03F7/0392 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10 ,  H01L27/115

Abstract: Some embodiments include methods of forming patterns in which a block copolymer-containing composition is formed over a substrate, and is then patterned to form a first mask. The block copolymer of the composition is subsequently induced into forming a repeating pattern within the first mask. Portions of the repeating pattern are then removed to form a second mask from the first mask. The patterning of the block copolymer-containing composition may utilize photolithography. Alternatively, the substrate may have regions which wet differently relative to one another with respect to the block copolymer-containing composition, and the patterning of the first mask may utilize such differences in wetting in forming the first mask.

Abstract translation: 一些实施方案包括形成图案的方法，其中在基底上形成含嵌段共聚物的组合物，然后将其图案化以形成第一掩模。 随后将组合物的嵌段共聚物在第一掩模内诱​​导形成重复图案。 然后去除重复图案的部分以从第一掩模形成第二掩模。 含嵌段共聚物的组合物的图案化可以利用光刻法。 或者，基底可以具有相对于含嵌段共聚物的组合物相对于彼此不同地湿润的区域，并且第一掩模的图案化可以在形成第一掩模时在润湿中使用这种差异。

公开(公告)号：US07641806B2

公开(公告)日：2010-01-05

申请号：US10864374

申请日：2004-06-10

Applicant: Katsuya Okumura ,  Kazuya Nagaseki ,  Naoyuki Satoh ,  Koji Maruyama

Inventor： Katsuya Okumura ,  Kazuya Nagaseki ,  Naoyuki Satoh ,  Koji Maruyama

IPC: H01L21/302 ,  H01J33/00

CPC classification number: H01J33/04 ,  B81B3/007 ,  B81B2203/0127 ,  B81C1/00158 ,  B81C2201/0198 ,  B81C2203/051 ,  G03F1/22 ,  G21K1/10 ,  H01J9/24 ,  H01J2237/31788

Abstract: By steps of forming first masks 13, 14 each having a first pattern on a first surface of a substrate 11 on which a membrane is to be formed, etching the first surface of the substrate 11 by using the first masks 13, 14 to forming first support beams 15, positioning a second surface of the substrate 11 on the basis of the first pattern on the first surface, forming a second mask 17 having a second pattern on the second surface of the substrate 11 based on the alignment and etching the second surface of the substrate 11 in dry by using the second mask 17 to form the second support beams 20, a membrane member 22a where the first and second support beams 15, 20 are formed on both surfaces of the membrane 12 is manufactured. Consequently, it is possible to provide the membrane member that is sufficient in strength and is hard to be deformed by heat.

Abstract translation: 通过形成第一掩模13,14的步骤，每个第一掩模13,14具有在其上将要形成膜的基板11的第一表面上的第一图案，通过使用第一掩模13,14蚀刻基板11的第一表面以形成第一 支撑梁15，基于第一图案在第一表面上定位基板11的第二表面，基于对准并蚀刻第二表面，在基板11的第二表面上形成具有第二图案的第二掩模17 通过使用第二掩模17来形成第二支撑梁20的基板11干燥的膜构件22a，其中在膜12的两个表面上形成有第一和第二支撑梁15,20的膜构件22a。 因此，可以提供足够强度并且难以被热变形的膜部件。

公开(公告)号：US20090239381A1

公开(公告)日：2009-09-24

申请号：US12405755

申请日：2009-03-17

Applicant: Taisei Nishimi ,  Kenichi Ishizuka

Inventor： Taisei Nishimi ,  Kenichi Ishizuka

IPC: H01L21/311 ,  B32B3/26 ,  H01L21/308 ,  B05D5/12

CPC classification number: H01L21/3086 ,  B01D61/14 ,  B01D69/02 ,  B01D69/141 ,  B01D71/24 ,  B01D71/26 ,  B01D71/28 ,  B01D71/40 ,  B01D71/80 ,  B01D2325/021 ,  B05D3/007 ,  B05D5/00 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  Y10T428/249953 ,  Y10T428/249975

Abstract: A porous film which is formed using a block copolymer composed of a water-soluble polymer and a water-insoluble polymer, has nanometer-size pores, and in which a desired functional polymer is present on the pore inner walls is provided. The porous film includes a microphase-separated morphology including a continuous phase which is composed primarily of a water-insoluble polymer A, and a plurality of cylindrical microdomains which are composed primarily of a water-soluble polymer B incompatible with the water-insoluble polymer A, distributed within the continuous phase and oriented perpendicular to a surface of the film. The cylindrical microdomains contain therein pores having a cylindrical shape and an average diameter of between 1 and 200 nm.

Abstract translation: 使用由水溶性聚合物和水不溶性聚合物构成的嵌段共聚物形成的多孔膜具有纳米尺寸的孔，其中在孔内壁上存在所需的官能聚合物。 多孔膜包括微相分离的形态，其包括主要由水不溶性聚合物A组成的连续相和主要由与水不溶性聚合物A不相容的水溶性聚合物B组成的多个圆筒状微区 分布在连续相中并垂直于膜的表面定向。 圆柱形微畴中包含具有圆柱形和平均直径在1至200nm之间的孔。

公开(公告)号：US07553760B2

公开(公告)日：2009-06-30

申请号：US11550966

申请日：2006-10-19

Applicant: Haining Yang ,  Wai-Kin Li

Inventor： Haining Yang ,  Wai-Kin Li

IPC: H01L21/302

CPC classification number: H01L23/5329 ,  B81C1/00095 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76816 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method to form interconnect structures including nano-scale, e.g., sub-lithographic, lines and vias for future generation of semiconductor technology using self-assembly block copolymers that can be placed at a specific location using a pre-fabricated hard mask pattern is provided. The inventive method provides an interconnect structure in which the line is self-aligned to the via.

Abstract translation: 提供了一种形成互连结构的方法，包括纳米尺度，例如亚光刻，线和通孔，用于使用可以使用预制的硬掩模图案放置在特定位置的自组装嵌段共聚物的半导体技术的未来生成 。 本发明的方法提供了一种互连结构，其中线路与通孔自对准。

公开(公告)号：US20090107950A1

公开(公告)日：2009-04-30

申请号：US11926722

申请日：2007-10-29

Applicant: Joy Cheng ,  Mark W. Hart ,  Hiroshi Ito ,  Ho-Cheol Kim ,  Robert Miller

Inventor： Joy Cheng ,  Mark W. Hart ,  Hiroshi Ito ,  Ho-Cheol Kim ,  Robert Miller

IPC: H01B13/00

CPC classification number: H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  H01L21/0271 ,  H01L21/0332

Abstract: A method for producing surface features and an etch masking method. A combination is provided of a block copolymer and additional material. The block copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. A film is formed of the combination directly onto a surface of a first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film of the combination and the first layer are etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. The film is removed and features remain on the surface of the first layer. Also included is an etch masking method where the nanostructures mask portions of the first layer from said etchant.

Abstract translation: 一种用于产生表面特征的方法和蚀刻掩模方法。 提供了一种嵌段共聚物和另外的材料的组合。 嵌段共聚物包括共价键合到第二聚合物的第二嵌段的第一聚合物的第一嵌段。 附加材料与第一聚合物混溶。 膜由直接形成在第一层的表面上。 附加材料的纳米结构在第一聚合物嵌段内自组装。 蚀刻组合和第一层的膜。 纳米结构的蚀刻速率低于嵌段共聚物的蚀刻速率，并且低于第一层的蚀刻速率。 去除膜并且特征保留在第一层的表面上。 还包括蚀刻掩模法，其中纳米结构掩盖了来自所述蚀刻剂的第一层的部分。

公开(公告)号：US20080318005A1

公开(公告)日：2008-12-25

申请号：US11765232

申请日：2007-06-19

Applicant: Dan B. Millward

Inventor： Dan B. Millward

IPC: B05D3/02 ,  B32B3/02 ,  C23F1/02 ,  C08L63/10

CPC classification number: G03F7/40 ,  B32B3/10 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  C08G81/02 ,  G03F7/12

Abstract: Methods for fabricating a random graft PS-r-PEO copolymer and its use as a neutral wetting layer in the fabrication of sublithographic, nanoscale arrays of elements including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.

Abstract translation: 用于制造无规接枝PS-r-PEO共聚物的方法及其在制备亚光刻纳米级元素阵列的元件中作为中性润湿层的用途，包括使用自组装嵌段共聚物的开口和线性微通道，以及由这些方法形成的膜和器件 被提供。 在一些实施例中，膜可以用作模板或掩模来蚀刻下层材料层中的开口。

公开(公告)号：US20080311347A1

公开(公告)日：2008-12-18

申请号：US11761589

申请日：2007-06-12

Applicant: Dan B. Millward ,  Donald Westmoreland ,  Gurtej Sandhu

Inventor： Dan B. Millward ,  Donald Westmoreland ,  Gurtej Sandhu

IPC: B05D3/10 ,  B32B3/22 ,  C23F1/02

CPC classification number: H01J37/02 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  G03F7/0002 ,  G03F7/265 ,  Y10T428/24 ,  Y10T428/24149 ,  Y10T428/24174 ,  Y10T428/2438

Abstract: Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.

Abstract translation: 提供了使用自组装嵌段共聚物制造包括开口和线性微通道的亚光刻纳米尺度微结构阵列的方法，以及由这些方法形成的膜和器件。 在一些实施例中，膜可以用作模板或掩模来蚀刻下层材料层中的开口。

公开(公告)号：US20080119008A1

公开(公告)日：2008-05-22

申请号：US11661316

申请日：2005-08-30

Applicant: Yuji Miyato ,  Kei Kobayashi ,  Hirofumi Yamada ,  Kazumi Matsushige

Inventor： Yuji Miyato ,  Kei Kobayashi ,  Hirofumi Yamada ,  Kazumi Matsushige

IPC: H01L51/40

CPC classification number: H01L51/0049 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L51/0048 ,  H01L51/0575

Abstract: A molecular device of the present invention is arranged so that a self-organizing monomolecular layer is formed on an oxide layer made of an oxide of a substrate by being chemically bonded with the surface of the oxide layer, and nano structures are formed on the monomolecular film. With this arrangement, the present invention provides a molecular device which causes less interaction between the substrate and nanostructures arranged on the substrate, thereby realizing easier control of orientation of nano structures on the substrate. The present invention also provides a manufacturing method of the molecular device.

Abstract translation: 本发明的分子装置被配置成通过与氧化物层的表面化学键合而在由氧化物的氧化物构成的氧化物层上形成自组织单分子层，并且在单分子层上形成纳米结构 电影。 通过这种布置，本发明提供了一种分子器件，其在衬底和布置在衬底上的纳米结构之间引起较少的相互作用，从而实现了更容易地控制衬底上的纳米结构的取向。 本发明还提供了分子装置的制造方法。

公开(公告)号：US20080038542A1

公开(公告)日：2008-02-14

申请号：US11717191

申请日：2007-03-13

Applicant: Joon Park ,  Young La ,  Joong Moon ,  Bongsoo Kim ,  Tai Kang ,  Ki Kim

Inventor： Joon Park ,  Young La ,  Joong Moon ,  Bongsoo Kim ,  Tai Kang ,  Ki Kim

IPC: B32B5/16 ,  H01L21/302

CPC classification number: G03F7/0045 ,  B81B2201/0214 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y10/00 ,  B82Y30/00 ,  G03F7/0755 ,  G03F7/165 ,  G03F7/2039 ,  H01L21/0337 ,  H01L21/312 ,  Y10S430/168 ,  Y10T428/261

Abstract: A method for nano-scale high resolution patterning of self-assembled monolayer using soft X-rays is provided. The method involves forming an aromatic imine molecular layer having substitutents at its terminal rings on a substrate, selectively cleaving bonds to the substituents of the aromatic imine molecular layer, and hydrolyzing the aromatic imine molecular layer.

Abstract translation: 提供了使用软X射线进行自组装单层纳米级高分辨率图案化的方法。 该方法包括在底物上的末端环上形成具有取代基的芳族亚胺分子层，选择性地切割与芳族亚胺分子层的取代基的键，并水解芳族亚胺分子层。