公开(公告)号：US11805709B2

公开(公告)日：2023-10-31

申请号：US16813628

申请日：2020-03-09

Applicant: PsiQuantum Corp.

Inventor： Faraz Najafi

IPC: H10N60/84 ,  G01J1/44 ,  H01L29/43 ,  H01L29/786 ,  H01L31/00 ,  H01L31/0224 ,  H01L31/113 ,  H10N60/10 ,  H10N60/20 ,  H10N60/30 ,  H10N60/35 ,  G01J1/42

CPC classification number: H10N60/84 ,  G01J1/44 ,  H01L29/437 ,  H01L29/78645 ,  H01L31/00 ,  H01L31/022408 ,  H01L31/1136 ,  H10N60/128 ,  H10N60/207 ,  H10N60/30 ,  H10N60/35 ,  G01J1/42 ,  G01J2001/442 ,  G01J2001/446 ,  G01J2001/4473

Abstract: The various embodiments described herein include methods, devices, and systems for fabricating and operating transistors. In one aspect, a transistor includes: (1) a semiconducting component configured to operate in an on state at temperatures above a semiconducting threshold temperature; and (2) a superconducting component configured to operate in a superconducting state while: (a) a temperature of the superconducting component is below a superconducting threshold temperature; and (b) a first current supplied to the superconducting component is below a current threshold; where: (i) the semiconducting component is located adjacent to the superconducting component; and (ii) in response to a first input voltage, the semiconducting component is configured to generate an electromagnetic field sufficient to lower the current threshold such that the first current exceeds the lowered current threshold, thereby transitioning the superconducting component to a non-superconducting state.

公开(公告)号：US20230213381A1

公开(公告)日：2023-07-06

申请号：US18145442

申请日：2022-12-22

Applicant: CANON KABUSHIKI KAISHA

Inventor： SHOGO YAMASAKI

IPC: G01J1/44 ,  H01L31/107

CPC classification number: G01J1/44 ,  H01L31/107 ,  G01J2001/442 ,  G01J2001/4466

Abstract: A photoelectric conversion device according to an embodiment of the present disclosure includes an avalanche photodiode, a pulse generation unit that converts an output from the avalanche photodiode into a pulse signal, a pulse count unit that counts the pulse signal and outputs a pulse count value, a time count unit that outputs a time count value indicating a time from the start of operation of the pulse generation unit, an output unit that, when the pulse count value does not exceed a threshold value, outputs the pulse count value, and when the pulse count value exceeds the threshold value, ends counting in the pulse count unit and outputs the time count value at the time of the pulse count value exceeding the threshold value, and a threshold calculation unit that calculates the threshold value using the time count value.

公开(公告)号：US20230213380A1

公开(公告)日：2023-07-06

申请号：US17967773

申请日：2022-10-17

Applicant: PsiQuantum Corp.

Inventor： Mark Thompson ,  Faraz Najafi

IPC: G01J1/04 ,  G01J1/44

CPC classification number: G01J1/0407 ,  G01J1/44 ,  G01J2001/442

Abstract: The various embodiments described herein include methods, devices, and systems for fabricating and operating superconducting photon detectors. In one aspect, a photon detector includes: (1) a first waveguide configured to guide photons from a photon source; (2) a second waveguide that is distinct and separate from the first waveguide and optically-coupled to the first waveguide; and (3) a superconducting component positioned adjacent to the second waveguide and configured to detect photons within the second waveguide.

公开(公告)号：US11658254B2

公开(公告)日：2023-05-23

申请号：US17688769

申请日：2022-03-07

Applicant: PSIQUANTUM CORP.

Inventor： Faraz Najafi ,  Mark Thompson ,  Damien Bonneau ,  Joaquin Matres Abril

IPC: H01L31/0352 ,  H01L31/18 ,  H01L31/0232 ,  H01L31/109 ,  H01L39/24 ,  G01J1/42 ,  H01L39/10 ,  G01J1/44

CPC classification number: H01L31/035227 ,  G01J1/42 ,  G01J1/44 ,  H01L31/02327 ,  H01L31/109 ,  H01L31/18 ,  H01L39/10 ,  H01L39/24 ,  H01L39/2416 ,  G01J2001/442

Abstract: A device includes a first semiconductor layer; a portion of a second semiconductor layer disposed on the first semiconductor layer; and a third semiconductor layer including a first region disposed on the portion of the second semiconductor layer and a second region disposed on the first semiconductor layer. A thickness of the first region is less than a predefined thickness. The device also includes an etch stop layer disposed on the third semiconductor layer; a plurality of distinct portions of a fourth semiconductor layer disposed on the etch stop layer and exposing one or more distinct portions of the etch stop layer over the portion of the second semiconductor layer; and a plurality of distinct portions of a superconducting layer disposed on the plurality of distinct portions of the fourth semiconductor layer and the exposed one or more distinct portions of the etch stop layer.

公开(公告)号：US11653576B2

公开(公告)日：2023-05-16

申请号：US17163274

申请日：2021-01-29

Applicant: Applied Materials, Inc.

Inventor： Zihao Yang ,  Mingwei Zhu ,  Nag B. Patibandla ,  Nir Yahav ,  Robert Jan Visser ,  Adi de la Zerda

IPC: H01L39/12 ,  G02B6/10 ,  G01J1/44

CPC classification number: H01L39/12 ,  G01J1/44 ,  G02B6/107 ,  G01J2001/442

Abstract: A superconducting nanowire single photon detector (SNSPD) device includes a substrate having a top surface, an optical waveguide on the top surface of the substrate to receive light propagating substantially parallel to the top surface of the substrate, a seed layer of metal nitride on the optical waveguide, and a superconductive wire on the seed layer. The superconductive wire is a metal nitride different from the metal nitride of the seed layer and is optically coupled to the optical waveguide.

公开(公告)号：US20190025440A1

公开(公告)日：2019-01-24

申请号：US15748750

申请日：2016-07-29

Applicant: Koninklijke Philips N.V.

Inventor： Roger STEADMAN BOOKER ,  Ewald ROESSL

IPC: G01T1/17 ,  G01T1/24 ,  G01T1/29 ,  H04N5/345

CPC classification number: G01T1/17 ,  G01J2001/442 ,  G01T1/247 ,  G01T1/2928 ,  H04N5/3456

Abstract: The invention relates a photon counting device and method for counting photon interactions in a piece of converter material and addressing the issue of charge sharing. The occurrence of a charge sharing event is already detected upon the onset of the pulse, taking into consideration an onset of a pulse in a neighboring pixel within a preferably very short coincidence window. According to the invention, it is detected whether a pulse is being processed and one or more neighboring pixels are scouted to decide whether a simultaneous interaction has been registered within a very short coincidence window.

公开(公告)号：US10012534B2

公开(公告)日：2018-07-03

申请号：US15318373

申请日：2014-07-02

Applicant: The Johns Hopkins University

Inventor： Andreas G. Andreou ,  Joseph H. Lin ,  Philippe O. Pouliquen ,  Charbel G. Rizk

IPC: G01J1/44 ,  H01L31/02 ,  H01L31/107 ,  H01L31/0352

CPC classification number: G01J1/44 ,  G01J2001/4406 ,  G01J2001/442 ,  G01J2001/4466 ,  G01J2001/448 ,  H01L31/02027 ,  H01L31/035272 ,  H01L31/107

Abstract: A photodetection circuit includes an avalanche photodiode and a mode switching circuit that may be configured to selectively switch an operating mode of the photodetection circuit between linear mode and Geiger mode. The photodetection circuit may further include a quenching circuit configured to quench and reset the avalanche photodiode in response to an avalanche event when the photodetection circuit is operated in Geiger mode. The photodetection circuit may additionally include an integration circuit configured to integrate photocurrent output by the photodiode and generate integrated charge units when the photodetection circuit is operated in linear mode. The photodetection circuit may also include a counter configured to count pulses output by the avalanche photodiode when the photodetection circuit is operated in Geiger mode and to count integrated charge units generated by the integration circuit when the photodetection circuit is operated in linear mode.

公开(公告)号：US20180180470A1

公开(公告)日：2018-06-28

申请号：US15830397

申请日：2017-12-04

Applicant: SICK AG

Inventor： Stefan SEITZ

IPC: G01J1/44

CPC classification number: G01J1/44 ,  G01J1/46 ,  G01J2001/4406 ,  G01J2001/442 ,  G01J2001/4466 ,  G01J2001/448 ,  G01S7/4863 ,  G01S7/4868 ,  G01S7/497 ,  G01S17/08 ,  G01S17/89 ,  H04B10/69

Abstract: A light receiver (22) having a plurality of avalanche photodiode elements (24) biased with a bias voltage above a breakdown voltage and thus operated in a Geiger mode in order to trigger a Geiger current upon light reception,wherein the avalanche photodiode elements (24) form a plurality of groups, wherein the light receiver (22) comprises a plurality of bias voltage terminals for supplying groups with different bias voltages and/or a plurality of readout circuits (60, 62, 64), each associated with a group (721-72n) and comprising a measurement path (60) and a blanking path (64) as well as a switching element (62) for selectively supplying the Geiger current, or a measurement current corresponding to the Geiger current, to the measurement path (60) or the blanking path (64).

公开(公告)号：US20180145110A1

公开(公告)日：2018-05-24

申请号：US15423446

申请日：2017-02-02

Applicant: Massachusetts Institute of Technology

Inventor： Qingyuan Zhao ,  Karl K. Berggren

IPC: H01L27/18 ,  H01L39/12 ,  H01L23/66 ,  H01L39/16 ,  H01L39/10 ,  H01L39/24 ,  H04N5/378 ,  G01J1/44

CPC classification number: H01L27/18 ,  G01J1/42 ,  G01J1/44 ,  G01J3/0286 ,  G01J3/2803 ,  G01J5/023 ,  G01J5/061 ,  G01J5/20 ,  G01J2001/442 ,  G01J2001/4446 ,  H01L23/66 ,  H01L39/10 ,  H01L39/125 ,  H01L39/16 ,  H01L39/2416 ,  H01L2223/6627 ,  H01L2223/6672 ,  H04N5/378

Abstract: An integrated, superconducting imaging sensor may be formed from a single, meandering nanowire. The sensor is capable of single-photon (or single-event) detection and imaging with ˜10 micron spatial resolution and sub-100-picosecond temporal resolution. The sensor may be readily scaled to large areas.

公开(公告)号：US20180120152A1

公开(公告)日：2018-05-03

申请号：US15566204

申请日：2016-04-07

Applicant: ams AG

Inventor： Vincenzo LEONARDO

IPC: G01J1/42 ,  H01L27/144 ,  H01L31/107 ,  H01L31/02 ,  H01L31/12

CPC classification number: G01J1/4228 ,  G01J2001/442 ,  G01J2001/4466 ,  G01J2001/448 ,  G01T1/17 ,  G01T1/40 ,  H01L27/1446 ,  H01L27/14681 ,  H01L31/02027 ,  H01L31/107 ,  H01L31/125 ,  H01L31/173

Abstract: An avalanche diode arrangement (10) comprises an avalanche diode (11) that is coupled to a first voltage terminal (16) and to a first node (13), an event detector (14) for detecting a trigger event of the avalanche diode (11) and being coupled to the first node (13), a quenching circuit (15) that is coupled to the first node (13), and a detection circuit (20) coupled to the first node (13). The detection circuit (20) is configured to provide a detection signal (SVC2) that depends on a value of a node voltage (SVA) at the first node (13).