公开(公告)号：US09812320B1

公开(公告)日：2017-11-07

申请号：US15222738

申请日：2016-07-28

Applicant: ASM IP Holding B.V.

Inventor： Viljami Pore ,  Werner Knaepen ,  Bert Jongbloed ,  Dieter Pierreux ,  Steven R. A. Van Aerde ,  Suvi Haukka ,  Atsuki Fukuzawa ,  Hideaki Fukuda

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32 ,  H01L21/762

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/402 ,  C23C16/45525 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/50 ,  H01J37/32009 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02299 ,  H01L21/76224

Abstract: According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a subsaturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.

公开(公告)号：US20170032956A1

公开(公告)日：2017-02-02

申请号：US14811370

申请日：2015-07-28

Applicant: ASM IP Holding B.V.

Inventor： Jun Kawahara ,  Suvi Haukka ,  Antti Niskanen ,  Eva Tois ,  Raija Matero ,  Hidemi Suemori ,  Jaako Anttila ,  Yukihiro Mori

IPC: H01L21/02 ,  H01L21/285

CPC classification number: H01L21/28556 ,  C23C16/04 ,  C23C16/45551 ,  C23C16/54 ,  H01L21/0262 ,  H01L21/28562 ,  H01L21/76829 ,  H01L21/76849

Abstract: In accordance with some embodiments herein, methods for deposition of thin films are provided. In some embodiments, thin film deposition is performed in a plurality of stations, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

Abstract translation: 根据本文的一些实施例，提供了用于沉积薄膜的方法。 在一些实施例中，在多个站中执行薄膜沉积，其中每个站提供不同的反应物或反应物的组合。 这些站可以彼此气体隔离，以便最小化或防止不同反应物或反应物组合之间的不希望的化学气相沉积（CVD）和/或原子层沉积（ALD）反应。

公开(公告)号：US20170029947A1

公开(公告)日：2017-02-02

申请号：US14811528

申请日：2015-07-28

Applicant: ASM IP Holding B.V.

Inventor： Jun Kawahara ,  Suvi Haukka ,  Antti Niskanen ,  Eva Tois ,  Raija Matero ,  Hidemi Suemori ,  Jaakko Anttila ,  Yukihiro Mori

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52

CPC classification number: C23C16/45527 ,  C23C16/45544 ,  C23C16/4583 ,  C23C16/52 ,  C23C16/54 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67745

Abstract: In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

Abstract translation: 根据本文的一些实施例，提供用于沉积薄膜的装置。 在一些实施例中，提供多个站，其中每个站提供不同的反应物或反应物的组合。 这些站可以彼此气体隔离，以便最小化或防止不同反应物或反应物组合之间的不希望的化学气相沉积（CVD）和/或原子层沉积（ALD）反应。

公开(公告)号：US20160376700A1

公开(公告)日：2016-12-29

申请号：US15262990

申请日：2016-09-12

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Eric James Shero ,  Fred Alokozai ,  Dong Li ,  Jereld Lee Winkler ,  Xichong Chen

IPC: C23C16/44

CPC classification number: C23C16/4405 ,  C23C16/32 ,  C23C16/4404 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/76843

Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

Abstract translation: 公开了一种用于处理沉积反应器的系统和方法。 该系统和方法去除或减轻用于沉积掺杂金属膜的气相反应器中的残余物的形成，例如掺铝的碳化钛膜或铝掺杂的碳化钽膜。 该方法包括将反应室暴露于缓和形成残留物形成物质的处理反应物的步骤。

公开(公告)号：US09520562B2

公开(公告)日：2016-12-13

申请号：US14334536

申请日：2014-07-17

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  Jan Willem Maes ,  Tom Blomberg ,  Marko Tuominen ,  Suvi Haukka ,  Robin Roelofs ,  Jacob Woodruff

IPC: H01L45/00 ,  H01L21/02 ,  H01L27/24

CPC classification number: H01L45/1616 ,  H01L21/02175 ,  H01L21/0228 ,  H01L27/249 ,  H01L45/08 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1226 ,  H01L45/1266 ,  H01L45/14 ,  H01L45/146 ,  H01L45/1608

Abstract: The disclosed technology generally relates to semiconductor devices, and relates more particularly to resistive random access memory devices and methods of making the same. In one aspect, a method of forming a resistive random access memory cell of a random access memory device includes forming a first electrode and forming a resistive switching material comprising an oxide of a pnictogen element by atomic layer deposition. The method additionally includes forming a metallic layer comprising the pnictogen element by atomic layer deposition (ALD). The resistive switching material is interposed between the first electrode and the metallic layer.

Abstract translation: 所公开的技术通常涉及半导体器件，更具体地涉及电阻随机存取存储器件及其制造方法。 一方面，一种形成随机存取存储器件的电阻随机存取存储单元的方法包括：通过原子层沉积形成第一电极并形成包含棱镜元件的氧化物的电阻开关材料。 该方法还包括通过原子层沉积（ALD）形成包含棱镜元件的金属层。 电阻开关材料介于第一电极和金属层之间。

公开(公告)号：US20160118261A1

公开(公告)日：2016-04-28

申请号：US14919180

申请日：2015-10-21

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Michael Givens ,  Eric Shero ,  Jerry Winkler ,  Petri Räisänen ,  Timo Asikainen ,  Chiyu Zhu ,  Jaakko Anttila

IPC: H01L21/285 ,  H01L29/49

CPC classification number: H01L29/4966 ,  C23C16/06 ,  C23C16/34 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45531 ,  H01L21/28562 ,  H01L21/32051 ,  H01L29/517

Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.

Abstract translation: 在反应空间中在基板上沉积包含氮的钛铝或钽铝薄膜的方法可以包括至少一个沉积循环。 沉积循环可以包括交替地和顺序地接触基底与气相Ti或Ta前体和气相Al前体。 气相Ti或Ta前体和气相Al前体中的至少一种可以在气相氮前体存在下与基底接触。

公开(公告)号：US20130244446A1

公开(公告)日：2013-09-19

申请号：US13799708

申请日：2013-03-13

Applicant: ASM IP HOLDING B.V.

Inventor： Naoto Tsuji ,  Atsuki Fukazawa ,  Noboru Takamure ,  Suvi Haukka ,  Antti Juhani Niskanen ,  Hyung Sang Park

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  C23C16/325 ,  C23C16/345 ,  C23C16/45534 ,  C23C16/4554 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/76829

Abstract: A method for forming a silicon-containing dielectric film on a substrate by atomic layer deposition (ALD) includes: providing two precursors, one precursor containing a halogen in its molecule, another precursor containing a silicon but no halogen in its molecule, adsorbing a first precursor, which is one of the two precursors onto a substrate to deposit a monolayer of the first precursor; adsorbing a second precursor, which is the other of the two precursors onto the monolayer of the first precursor to deposit a monolayer of the second precursor; and exposing the monolayer of the second precursor to radicals of a reactant to cause surface reaction with the radicals to form a compound monolayer of a silicon-containing film.

Abstract translation: 通过原子层沉积（ALD）在衬底上形成含硅电介质膜的方法包括：提供两个前体，在其分子中含有卤素的一种前体，在其分子中含有硅但不含卤素的另一种前体，吸附第一 前体，其是沉积单层第一前体的底物上的两种前体之一; 将作为所述两种前体中的另一种的第二前体吸附到所述第一前体的单层上以沉积所述第二前体的单层; 并将第二前体的单层暴露于反应物的自由基以引起与自由基的表面反应以形成含硅膜的化合物单层。

公开(公告)号：US11739427B2

公开(公告)日：2023-08-29

申请号：US17646274

申请日：2021-12-28

Applicant: ASM IP HOLDING B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC: C23F4/02 ,  C23F1/12 ,  H01L21/3213 ,  C09K13/00 ,  H01L21/311 ,  C09K13/08 ,  C09K13/10 ,  H01J37/32 ,  H01L21/3065

CPC classification number: C23F4/02 ,  C09K13/00 ,  C09K13/08 ,  C09K13/10 ,  C23F1/12 ,  H01J37/32009 ,  H01J37/3244 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/31138

Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US20230207309A1

公开(公告)日：2023-06-29

申请号：US18117729

申请日：2023-03-06

Applicant: ASM IP Holding B.V.

Inventor： Viljami Pore ,  Werner Knaepen ,  Bert Jongbloed ,  Dieter Pierreux ,  Steven R.A. Van Aerde ,  Suvi Haukka ,  Atsuki Fukazawa ,  Hideaki Fukuda

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/762 ,  C23C16/455 ,  C23C16/04 ,  C23C16/40

CPC classification number: H01L21/0228 ,  H01J37/32009 ,  H01L21/76224 ,  H01L21/02274 ,  H01L21/02178 ,  H01L21/02299 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/0217 ,  H01L21/02183 ,  H01L21/02219 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/045 ,  C23C16/402 ,  H01J2237/334 ,  H01J2237/3321

Abstract: According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a sub saturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.

公开(公告)号：US11610775B2

公开(公告)日：2023-03-21

申请号：US16318094

申请日：2017-07-14

Applicant: ASM IP Holding B.V.

Inventor： Viljami Pore ,  Werner Knaepen ,  Bert Jongbloed ,  Dieter Pierreux ,  Steven R. A. Van Aerde ,  Suvi Haukka ,  Atsuki Fukazawa ,  Hideaki Fukuda

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  H01L21/762 ,  C23C16/04 ,  C23C16/40

Abstract: According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a subsaturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.