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    Pre-treatment approach to improve continuity of ultra-thin amorphous silicon film on silicon oxide
    61.
    发明授权
    Pre-treatment approach to improve continuity of ultra-thin amorphous silicon film on silicon oxide 有权

    公开(公告)号：US10559465B2

    公开(公告)日：2020-02-11

    申请号：US15988771

    申请日：2018-05-24

    Applicant: Applied Materials, Inc.

    Inventor： Rui Cheng ,  Yi Yang ,  Yihong Chen ,  Karthik Janakiraman ,  Abhijit Basu Mallick

    IPC: H01L21/02 ,  H01L21/205 ,  H01L21/033 ,  H01L21/3205 ,  H01L21/308 ,  H01L21/311

    Abstract: In one implementation, a method of forming an amorphous silicon layer on a substrate in a processing chamber is provided. The method comprises depositing a predetermined thickness of a sacrificial dielectric layer over a substrate. The method further comprises forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate. The method further comprises performing a plasma treatment to the patterned features. The method further comprises depositing an amorphous silicon layer on the patterned features and the exposed upper surface of the substrate. The method further comprises selectively removing the amorphous silicon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers formed from the amorphous silicon layer.

    SELECTIVITY OF BORON HARD MASKS USING ION IMPLANT
    63.
    发明申请
    SELECTIVITY OF BORON HARD MASKS USING ION IMPLANT 有权

    公开(公告)号：US20250140566A1

    公开(公告)日：2025-05-01

    申请号：US18495493

    申请日：2023-10-26

    Applicant: Applied Materials, Inc.

    Inventor： Aykut Aydin ,  Rajesh Prasad ,  Fenglin Wang ,  Rui Cheng ,  Karthik Janakiraman ,  Kyu-Ha Shim

    IPC: H01L21/3115 ,  H01L21/033 ,  H01L21/311 ,  H10B12/00

    Abstract: Thicker hardmasks are typically needed for etching deeper capacitor holes in a DRAM structure. Instead of increasing the hardmask thickness, hardmasks may instead be formed with an increased etch selectivity relative to the underlying semiconductor structure. For example, boron-based hardmasks may be formed that include a relatively high percentage of boron (e.g., greater than 90%). The etch selectivity of the hardmask may be improved by performing an ion implant process using different types of ions. The ion implant may take place before or after opening the hardmask with the pattern for the DRAM capacitor holes. Some designs may also tilt the semiconductor substrate relative to the ion implant process and rotate the substrate to provide greater ion penetration throughout a depth of the openings in the hardmask.

    BORON CONCENTRATION TUNABILITY IN BORON-SILICON FILMS
    64.
    发明申请
    BORON CONCENTRATION TUNABILITY IN BORON-SILICON FILMS 有权

    公开(公告)号：US20250112046A1

    公开(公告)日：2025-04-03

    申请号：US18980163

    申请日：2024-12-13

    Applicant: Applied Materials, Inc.

    Inventor： Yi Yang ,  Krishna Nittala ,  Rui Cheng ,  Karthik Janakiraman ,  Diwakar Kedlaya ,  Zubin Huang ,  Aykut Aydin

    IPC: H01L21/033 ,  C23C16/38

    Abstract: Exemplary semiconductor processing methods may include flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber. The methods may include flowing a boron-containing precursor into the substrate processing region of the semiconductor processing chamber. The methods may include depositing a boron-and-silicon-containing layer on a substrate in the substrate processing region of the semiconductor processing chamber. The boron-and-silicon-containing layer may be characterized by an increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer opposite the first surface. A flow rate of the boron-containing precursor may be increased during the deposition of the boron-and-silicon-containing layer.

    Metal-doped boron films
    65.
    发明授权
    Metal-doped boron films 有权

    公开(公告)号：US12077852B2

    公开(公告)日：2024-09-03

    申请号：US17240395

    申请日：2021-04-26

    Applicant: Applied Materials, Inc.

    Inventor： Aykut Aydin ,  Rui Cheng ,  Karthik Janakiraman

    IPC: C23C16/04 ,  C23C16/18 ,  C23C16/40 ,  C23C22/77 ,  C23C22/82

    CPC classification number: C23C16/042 ,  C23C16/18 ,  C23C16/402 ,  C23C22/77 ,  C23C22/82

    Abstract: Exemplary deposition methods may include delivering a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include delivering a dopant-containing precursor with the boron-containing precursor. The dopant-containing precursor may include a metal. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a doped-boron material on a substrate disposed within the processing region of the semiconductor processing chamber. The doped-boron material may include greater than or about 80 at. % of boron in the doped-boron material.

    Processes for depositing sib films
    67.
    发明授权
    Processes for depositing sib films 有权

    公开(公告)号：US12033848B2

    公开(公告)日：2024-07-09

    申请号：US17352039

    申请日：2021-06-18

    Applicant: Applied Materials, Inc.

    Inventor： Aykut Aydin ,  Rui Cheng ,  Karthik Janakiraman ,  Abhijit B. Mallick ,  Takehito Koshizawa ,  Bo Qi

    IPC: H01L21/02

    CPC classification number: H01L21/02123 ,  H01L21/02211 ,  H01L21/02271

    Abstract: Embodiments of the present disclosure generally relate to processes for forming silicon- and boron-containing films for use in, e.g., spacer-defined patterning applications. In an embodiment, a spacer-defined patterning process is provided. The process includes disposing a substrate in a processing volume of a processing chamber, the substrate having patterned features formed thereon, and flowing a first process gas into the processing volume, the first process gas comprising a silicon-containing species, the silicon-containing species having a higher molecular weight than SiH4. The process further includes flowing a second process gas into the processing volume, the second process gas comprising a boron-containing species, and depositing, under deposition conditions, a conformal film on the patterned features, the conformal film comprising silicon and boron.

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