公开(公告)号：US11359281B2

公开(公告)日：2022-06-14

申请号：US16752678

申请日：2020-01-26

Applicant: Applied Materials, Inc.

Inventor： Shuaidi Zhang ,  Ning Li ,  Mihaela Balseanu

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/458 ,  C23C16/06 ,  C23C16/02

Abstract: Methods of selectively forming SiCON films are described. In some embodiments, the methods comprise sequential exposure to a silicon halide, a mixture of alkanolamine and amine reactants and a deposition plasma. In some embodiments, the method further comprises pre-cleaning the target substrate to improve selectivity.

公开(公告)号：US11158489B2

公开(公告)日：2021-10-26

申请号：US15805466

申请日：2017-11-07

Applicant: Applied Materials, Inc.

Inventor： Tsutomu Tanaka ,  John C. Forster ,  Ran Liu ,  Kenichi Ohno ,  Ning Li ,  Mihaela Balseanu ,  Keiichi Tanaka ,  Li-Qun Xia

IPC: H01J37/00 ,  H01J37/32 ,  C23C16/50 ,  C23C16/455 ,  C23C16/458 ,  C23C16/34 ,  C23C16/40 ,  C23C16/52 ,  C23C16/505

Abstract: Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.

公开(公告)号：US11133178B2

公开(公告)日：2021-09-28

申请号：US16577459

申请日：2019-09-20

Applicant: Applied Materials, Inc.

Inventor： Mihaela Balseanu ,  Ning Li

IPC: H01L21/31 ,  H01L21/02

Abstract: Methods for filling a substrate feature with a seamless dielectric gap fill are described. Methods comprise sequentially depositing a film with a seam, etching the the film to form a recess, and depositing a second film in the recess to form a seamless gap fill.

公开(公告)号：US20210090882A1

公开(公告)日：2021-03-25

申请号：US16577459

申请日：2019-09-20

Applicant: Applied Materials, Inc.

Inventor： Mihaela Balseanu ,  Ning Li

IPC: H01L21/02

Abstract: Methods for filling a substrate feature with a seamless dielectric gap fill are described. Methods comprise sequentially depositing a film with a seam, etching the the film to form a recess, and depositing a second film in the recess to form a seamless gap fill.

公开(公告)号：US20210032749A1

公开(公告)日：2021-02-04

申请号：US16941843

申请日：2020-07-29

Applicant: Applied Materials, Inc.

Inventor： Cong Trinh ,  Mihaela A. Balseanu ,  Maribel Maldonado-Garcia ,  Ning Li ,  Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Keenan N. Woods ,  Lisa J. Enman

IPC: C23C16/455 ,  C23C16/02

Abstract: Methods of depositing an encapsulation stack without damaging underlying layers are discussed. The encapsulation stacks are highly conformal, have low etch rates, low atomic oxygen concentrations, good hermeticity and good adhesion. These films may be used to protect chalcogen materials in PCRAM devices. Some embodiments utilize a two-step process comprising a first ALD process to form a protective layer and a second plasma ALD process to form an encapsulation layer.

公开(公告)号：US10453678B2

公开(公告)日：2019-10-22

申请号：US15951655

申请日：2018-04-12

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Zhelin Sun ,  Mihaela Balseanu ,  Li-Qun Xia ,  Bhaskar Jyoti Bhuyan ,  Mark Saly

IPC: H01L21/02 ,  C23C16/56 ,  C23C16/04 ,  C23C16/36 ,  C23C16/455

Abstract: Methods and apparatus for forming a conformal SiOC film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a steam annealing process to decrease the nitrogen content, increase the oxygen content and leave the carbon content about the same. The annealed film has one or more of the wet etch rate or dielectric constant of the film.

公开(公告)号：US20180076023A1

公开(公告)日：2018-03-15

申请号：US15805831

申请日：2017-11-07

Applicant: Applied Materials, Inc.

Inventor： Wenbo Yan ,  Cong Trinh ,  Ning Li ,  Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Mark Saly

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/40 ,  H01L21/687

CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/45542 ,  C23C16/45551 ,  C23C16/45553 ,  G05B2219/45031 ,  G05B2219/45232 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/68764

Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.

公开(公告)号：US20170263438A1

公开(公告)日：2017-09-14

申请号：US15455766

申请日：2017-03-10

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Dongqing Yang ,  Anchuan Wang

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/311

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/45519 ,  C23C16/45551 ,  C23C16/45555 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L29/6653

Abstract: Methods for forming a spacer comprising depositing a film on the top, bottom and sidewalls of a feature and treating the film to change a property of the film on the top and bottom of the feature. Selectively dry etching the film from the top and bottom of the feature relative to the film on the sidewalls of the feature using a high intensity plasma.

公开(公告)号：US20160099143A1

公开(公告)日：2016-04-07

申请号：US14872775

申请日：2015-10-01

Applicant: Applied Materials, Inc.

Inventor： Wenbo Yan ,  Cong Trinh ,  Ning Li ,  Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Mark Saly

IPC: H01L21/02 ,  H01L21/687

CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/45542 ,  C23C16/45551 ,  C23C16/45553 ,  G05B2219/45031 ,  G05B2219/45232 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/68764

Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.

Abstract translation: 描述了使用氨基硅烷化合物作为硅前体在晶片表面上沉积SiO 2膜的工艺。

公开(公告)号：US20150147484A1

公开(公告)日：2015-05-28

申请号：US14533496

申请日：2014-11-05

Applicant: Applied Materials, Inc.

Inventor： Victor Nguyen ,  Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Mark Saly ,  David Thompson

IPC: C23C16/455 ,  C23C16/34

CPC classification number: C23C16/45553 ,  C23C16/345 ,  C23C16/36 ,  C23C16/45536 ,  C23C16/4554 ,  C23C16/45542

Abstract: Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.

Abstract translation: 提供沉积包含SiCN的膜的方法。 某些方法包括将衬底表面暴露于硅前体，其中硅前体用Cl，Br或I卤化，硅前体包含卤代硅烷，卤代碳硅烷，卤代氨基硅烷或卤代碳硅烷基胺。 然后，可以将衬底表面暴露于含氮等离子体或氮前体和致密化等离子体。