Frequency tuning of film bulk acoustic resonators (FBAR)
    62.
    发明申请
    Frequency tuning of film bulk acoustic resonators (FBAR) 审中-公开
    薄膜体声共振器(FBAR)的频率调谐

    公开(公告)号:US20070139140A1

    公开(公告)日:2007-06-21

    申请号:US11314361

    申请日:2005-12-20

    CPC classification number: H03H3/04 H03H3/0076 H03H2003/0428 H03H2003/0478

    Abstract: Multiple FBARs may be manufactured on a single wafer and later diced. Ideally, all devices formed in a wafer would have the same resonance frequency. However, due to manufacturing variances, the frequency response of the FBAR devices may vary slightly across the wafer. An RF map may be created to determine zones over the wafer where FBARs in that zone all vary from a target frequency by a similar degree. A tuning layer may be deposited over the wafer. Lithographically patterned features to the tuning layer based on the zones identified by the RF map may be used to correct the FBARs to a target resonance frequency with the FBARs still intact on the wafer.

    Abstract translation: 多个FBAR可以在单个晶片上制造并且稍后被切割。 理想地,形成在晶片中的所有器件将具有相同的谐振频率。 然而,由于制造方差,FBAR器件的频率响应可能会在晶圆上略有不同。 可以创建RF映射以确定晶片上的区域,其中该区域中的FBAR全部从目标频率变化相似程度。 调谐层可以沉积在晶片上。 可以使用基于由RF映射表示的区域的调谐层的光刻图案特征来将FBAR校正到目标谐振频率,同时FBAR在晶片上仍然完整。

    Microelectronic package having multiple conductive paths through an opening in a support substrate
    63.
    发明申请
    Microelectronic package having multiple conductive paths through an opening in a support substrate 有权
    具有通过支撑衬底中的开口的多个导电路径的微电子封装

    公开(公告)号:US20070077747A1

    公开(公告)日:2007-04-05

    申请号:US11240750

    申请日:2005-09-30

    Applicant: John Heck Qing Ma

    Inventor: John Heck Qing Ma

    Abstract: Microelectronic packages are disclosed. A microelectronic package may include a substrate having first and second sides. Passive components may be located on the first side of the substrate. Interconnects may also be located on the first side of the substrate, and may be electrically coupled with the passive components. Microelectronic components may be located on the first side of the substrate and may be electrically coupled with interconnects. The substrate may include an opening therein. The opening may lead from the second side of the substrate toward the first side of the substrate. A plurality of conductive paths may be at least partially included in the opening. Each of the conductive paths may lead from the second side of the substrate toward the first side of the substrate to communicate electrical signals to interconnects. Methods of making the packages and electronic devices including the packages are also disclosed.

    Abstract translation: 公开了微电子封装。 微电子封装可以包括具有第一和第二侧面的衬底。 无源组件可以位于衬底的第一侧上。 互连件也可以位于衬底的第一侧上,并且可以与无源部件电耦合。 微电子部件可以位于衬底的第一侧上并且可以与互连件电耦合。 衬底可以包括其中的开口。 开口可以从基板的第二侧朝向基板的第一侧。 多个导电路径可以至少部分地包括在开口中。 每个导电路径可以从衬底的第二侧朝向衬底的第一侧引导,以将电信号传送到互连。 还公开了制造包装和包括包装的电子装置的方法。

    Integrated microsprings for speed switches
    64.
    发明授权
    Integrated microsprings for speed switches 失效
    用于速度开关的集成微型弹簧

    公开(公告)号:US07173203B2

    公开(公告)日:2007-02-06

    申请号:US11012520

    申请日:2004-12-15

    Applicant: Qing Ma

    Inventor: Qing Ma

    CPC classification number: H01H59/0009 H01H2001/0052

    Abstract: An integrated microspring switch may be provided for relatively high frequency switching applications. A spring arm may be formed over a microspring dimple, which may be hemispherical and hollow in one embodiment. When the spring arm contacts the dimple, the spring dimple may resiliently deflect away or collapse, increasing the contact area between the spring arm and the dimple.

    Abstract translation: 可以提供用于相对高频切换应用的集成微动开关。 弹性臂可以形成在微小凹坑上,在一个实施例中可以是半球形和中空的。 当弹簧臂接触凹坑时,弹簧凹坑可以弹性偏转或折叠,增加弹簧臂和凹坑之间的接触面积。

    Sacrificial layer technique to make gaps in MEMS applications
    66.
    发明申请
    Sacrificial layer technique to make gaps in MEMS applications 有权
    牺牲层技术在MEMS应用中产生空白

    公开(公告)号:US20060027891A1

    公开(公告)日:2006-02-09

    申请号:US11241024

    申请日:2005-09-30

    Applicant: Qing Ma Peng Cheng

    Inventor: Qing Ma Peng Cheng

    CPC classification number: B81C1/00126 B81C2201/0109 H03H3/0072

    Abstract: A method comprising over an area of a substrate, forming a plurality of three dimensional first structures; following forming the first structures, conformally introducing a sacrificial material over the area of the substrate; introducing a second structural material over the sacrificial material; and removing the sacrificial material. An apparatus comprising a first structure on a substrate; and a second structure on the substrate and separated from the first structure by an unfilled gap defined by the thickness of a removed film.

    Abstract translation: 一种方法,包括在衬底的一个区域上,形成多个三维第一结构; 在形成第一结构之后,在衬底的区域上保形地引入牺牲材料; 在牺牲材料上引入第二结构材料; 并去除牺牲材料。 一种装置,包括在基板上的第一结构; 以及第二结构,并且通过由去除膜的厚度限定的未填充间隙与第一结构分离。

    Switch architecture using MEMS switches and solid state switches in parallel
    68.
    发明授权
    Switch architecture using MEMS switches and solid state switches in parallel 失效
    开关架构采用MEMS开关和固态开关并联

    公开(公告)号:US06940363B2

    公开(公告)日:2005-09-06

    申请号:US10322290

    申请日:2002-12-17

    CPC classification number: H01H9/542 H01H1/0036 H01H9/541 H01H59/0009

    Abstract: In a switching scheme mechanical MEMs switches are connected in parallel with solid state switches. This parallel MEMS/solid-state switch arrangement takes advantage of the fast switching speeds of the solid state switches as well advantage of the improved insertion loss and isolation characteristics of the MEMS switches. The solid-state switches only need to be energized during a ramp up/down period associated with the slower MEMs switch thus conserving power. As an additional advantage, using a solid-state switch in parallel with MEMs switches improves the transient spectrum of the system during switching operations.

    Abstract translation: 在开关方案中,机械式MEMs开关与固态开关并联连接。 这种并联的MEMS /固态开关装置利用固态开关的快速开关速度以及MEMS开关的改进的插入损耗和隔离特性的优点。 固态开关只需要在与较慢的MEMs开关相关联的斜坡上升/下降周期期间被通电,从而节省功率。 作为额外的优点,与MEMs开关并联的固态开关可以改善开关操作期间系统的瞬态频谱。

    Size scaling of film bulk acoustic resonator (FBAR) filters using impedance transformer (IT) or balun
    69.
    发明申请
    Size scaling of film bulk acoustic resonator (FBAR) filters using impedance transformer (IT) or balun 审中-公开
    使用阻抗变压器(IT)或平衡 - 不平衡转换器的薄膜体声波谐振器(FBAR)滤波器的尺寸缩放

    公开(公告)号:US20050093652A1

    公开(公告)日:2005-05-05

    申请号:US10698889

    申请日:2003-10-31

    Applicant: Qing Ma Dong Shim

    Inventor: Qing Ma Dong Shim

    CPC classification number: H03H9/0095

    Abstract: The disclosure describes an apparatus comprising a film bulk acoustic resonator (FBAR) filter having an input and an output, and an impedance matching unit coupled to one of the input and the output of the FBAR filter. Also described is a process comprising providing a film bulk acoustic resonator (FBAR) filter, the FBAR filter having an input impedance and an output impedance, matching the impedance of an input circuit to the input impedance of the FBAR filter, and matching the output impedance of the FBAR filter to the impedance of an output circuit. Other embodiments are described and claimed.

    Abstract translation: 本公开描述了一种包括具有输入和输出的膜体声波谐振器(FBAR)滤波器和耦合到FBAR滤波器的输入和输出之一的阻抗匹配单元的装置。 还描述了一种方法,其包括提供薄膜体声波谐振器(FBAR)滤波器,FBAR滤波器具有输入阻抗和输出阻抗,匹配输入电路的阻抗与FBAR滤波器的输入阻抗,并匹配输出阻抗 的FBAR滤波器到输出电路的阻抗。 描述和要求保护其他实施例。

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