公开(公告)号：US10381228B2

公开(公告)日：2019-08-13

申请号：US14631807

申请日：2015-02-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ying Lin ,  Ted Ming-Lang Guo ,  Chin-Cheng Chien ,  Chih-Chien Liu ,  Hsin-Kuo Hsu ,  Chin-Fu Lin ,  Chun-Yuan Wu

IPC: H01L21/306 ,  H01L21/3065 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78

Abstract: An epitaxial process applying light illumination includes the following steps. A substrate is provided. A dry etching process and a wet etching process are performed to form a recess in the substrate, wherein an infrared light illuminates while the wet etching process is performed. An epitaxial structure is formed in the recess.

公开(公告)号：US20180331044A1

公开(公告)日：2018-11-15

申请号：US15624498

申请日：2017-06-15

Applicant: United Microelectronics Corp.

Inventor： Yi-Yu Wu ,  Chun-Yuan Wu ,  Chih-Chien Liu ,  Bin-Siang Tsai

IPC: H01L23/532 ,  H01L23/528 ,  H01L23/522 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L23/53257 ,  H01L21/02068 ,  H01L21/02164 ,  H01L21/02175 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/76883 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53228 ,  H01L23/53266 ,  H01L23/53295

Abstract: A semiconductor device including a tungsten contact structure formed in a first dielectric layer on a substrate is provided. The tungsten contact structure contains a seam structure. A tungsten oxide layer is formed at least on a sidewall of the seam structure.

公开(公告)号：US09401429B2

公开(公告)日：2016-07-26

申请号：US13917623

申请日：2013-06-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chin-Cheng Chien ,  Chun-Yuan Wu ,  Chin-Fu Lin ,  Chih-Chien Liu ,  Chia-Lin Hsu

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L29/785 ,  H01L29/42392 ,  H01L29/66795 ,  H01L29/78696

Abstract: A semiconductor structure includes a fin-shaped structure and a gate. The fin-shaped structure is located in a substrate, wherein the fin-shaped structure has a through hole located right below a suspended part. The gate surrounds the suspended part. Moreover, the present invention also provides a semiconductor process including the following steps for forming said semiconductor structure. A substrate is provided. A fin-shaped structure is formed in the substrate, wherein the fin-shaped structure has a bottom part and a top part. A part of the bottom part is removed to form a suspended part in the corresponding top part, thereby forming the suspended part over a through hole. A gate is formed to surround the suspended part.

Abstract translation: 半导体结构包括鳍状结构和栅极。 鳍状结构位于基板中，其中鳍状结构具有位于悬挂部分正下方的通孔。 门围绕悬挂部分。 此外，本发明还提供一种半导体工艺，包括用于形成所述半导体结构的以下步骤。 提供基板。 在基板上形成翅片状结构，其中，翅片状结构具有底部和顶部。 底部的一部分被去除以在相应的顶部部分中形成悬挂部分，从而在悬空部分上形成通孔。 形成围绕悬挂部分的门。

公开(公告)号：US20160211144A1

公开(公告)日：2016-07-21

申请号：US14631807

申请日：2015-02-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ying Lin ,  Ted Ming-Lang Guo ,  Chin-Cheng Chien ,  Chih-Chien Liu ,  Hsin-Kuo Hsu ,  Chin-Fu Lin ,  Chun-Yuan Wu

IPC: H01L21/306 ,  H01L29/66 ,  H01L29/08 ,  H01L21/3065

CPC classification number: H01L21/30608 ,  H01L21/3065 ,  H01L29/0847 ,  H01L29/66795 ,  H01L29/785

Abstract: An epitaxial process applying light illumination includes the following steps. A substrate is provided. A dry etching process and a wet etching process are performed to form a recess in the substrate, wherein an infrared light illuminates while the wet etching process is performed. An epitaxial structure is formed in the recess.

Abstract translation: 施加光照射的外延工艺包括以下步骤。 提供基板。 执行干蚀刻工艺和湿蚀刻工艺以在衬底中形成凹部，其中在执行湿蚀刻工艺时红外光照亮。 在凹部中形成外延结构。

公开(公告)号：US20160148816A1

公开(公告)日：2016-05-26

申请号：US14549529

申请日：2014-11-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Rung-Yuan Lee ,  Yu-Ting Li ,  Jing-Yin Jhang ,  Chen-Yi Weng ,  Jia-Feng Fang ,  Yi-Wei Chen ,  Wei-Jen Wu ,  Po-Cheng Huang ,  Fu-Shou Tsai ,  Kun-Ju Li ,  Wen-Chin Lin ,  Chih-Chien Liu ,  Chih-Hsun Lin ,  Chun-Yuan Wu

IPC: H01L21/306 ,  H01L21/28

CPC classification number: H01L21/30625 ,  H01L21/28123 ,  H01L21/32115 ,  H01L21/3212

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a first material layer on the substrate; forming a stop layer on the first material layer; forming a second material layer on the stop layer; and performing a planarizing process to remove the second material layer, the stop layer, and part of the first material layer for forming a gate layer.

Abstract translation: 公开了半导体器件的制造方法。 该方法包括以下步骤：提供衬底; 在所述基板上形成第一材料层; 在所述第一材料层上形成停止层; 在所述停止层上形成第二材料层; 并且进行平面化处理以去除第二材料层，停止层以及用于形成栅极层的第一材料层的一部分。

公开(公告)号：US20160111527A1

公开(公告)日：2016-04-21

申请号：US14979594

申请日：2015-12-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chin-Cheng Chien ,  Hsin-Kuo Hsu ,  Chih-Chien Liu ,  Chin-Fu Lin ,  Chun-Yuan Wu

IPC: H01L29/66 ,  H01L21/311 ,  H01L29/10 ,  H01L21/02

CPC classification number: H01L29/66795 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/30604 ,  H01L21/31111 ,  H01L29/06 ,  H01L29/0657 ,  H01L29/1054 ,  H01L29/36 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7853

Abstract: A method for fabricating semiconductor device with fin-shaped structure is disclosed. The method includes the steps of: forming a fin-shaped structure on a substrate; forming a first dielectric layer on the substrate and the fin-shaped structure; depositing a second dielectric layer on the first dielectric layer; etching back a portion of the second dielectric layer; removing part of the first dielectric layer to expose a top surface and part of the sidewall of the fin-shaped structure; forming an epitaxial layer to cover the exposed top surface and part of the sidewall of the fin-shaped structure; and removing a portion of the second dielectric layer.

Abstract translation: 公开了一种制造具有鳍状结构的半导体器件的方法。 该方法包括以下步骤：在衬底上形成鳍状结构; 在所述基板上形成第一电介质层和所述鳍状结构; 在所述第一电介质层上沉积第二电介质层; 蚀刻第二介电层的一部分; 去除所述第一电介质层的一部分以暴露所述鳍状结构的顶表面和所述侧壁的一部分; 形成外延层以覆盖所述鳍状结构的暴露的顶表面和所述侧壁的一部分; 以及去除所述第二电介质层的一部分。

公开(公告)号：US09281374B2

公开(公告)日：2016-03-08

申请号：US14490679

申请日：2014-09-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tsun-Min Cheng ,  Min-Chuan Tsai ,  Chih-Chien Liu ,  Jen-Chieh Lin ,  Pei-Ying Li ,  Shao-Wei Wang ,  Mon-Sen Lin ,  Ching-Ling Lin

IPC: H01L29/49 ,  H01L29/423 ,  H01L29/43 ,  H01L29/772 ,  H01L29/66 ,  H01L29/78 ,  H01L29/51 ,  H01L21/8238 ,  H01L21/8234

CPC classification number: H01L29/4966 ,  H01L21/82345 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4232 ,  H01L29/435 ,  H01L29/51 ,  H01L29/66045 ,  H01L29/66545 ,  H01L29/78

Abstract: A metal gate structure located on a substrate includes a gate dielectric layer, a metal layer and a titanium aluminum nitride metal layer. The gate dielectric layer is located on the substrate. The metal layer is located on the gate dielectric layer. The titanium aluminum nitride metal layer is located on the metal layer.

Abstract translation: 位于基板上的金属栅极结构包括栅介质层，金属层和氮化铝钛金属层。 栅介质层位于衬底上。 金属层位于栅极电介质层上。 氮化铝钛金属层位于金属层上。

公开(公告)号：US20150357190A1

公开(公告)日：2015-12-10

申请号：US14312707

申请日：2014-06-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chin-Cheng Chien ,  Hsin-Kuo Hsu ,  Chih-Chien Liu ,  Chin-Fu Lin ,  Chun-Yuan Wu

IPC: H01L21/02 ,  H01L29/36 ,  H01L29/78 ,  H01L21/311

CPC classification number: H01L29/66795 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/30604 ,  H01L21/31111 ,  H01L29/06 ,  H01L29/0657 ,  H01L29/1054 ,  H01L29/36 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7853

Abstract: A semiconductor device with fin-shaped structure is disclosed. The semiconductor device includes: a substrate; a fin-shaped structure on the substrate; and an epitaxial layer on a top surface and part of the sidewall of the fin-shaped structure, in which the epitaxial layer and the fin-shaped structure includes a linear gradient of germanium concentration therebetween.

Abstract translation: 公开了一种具有鳍状结构的半导体器件。 半导体器件包括：衬底; 基板上的鳍状结构; 以及在鳍状结构的顶表面和侧壁的一部分上的外延层，其中外延层和鳍状结构在其间包括锗浓度的线性梯度。

公开(公告)号：US09184292B2

公开(公告)日：2015-11-10

申请号：US14340267

申请日：2014-07-24

Applicant: United Microelectronics Corp.

Inventor： Chin-Fu Lin ,  Chin-Cheng Chien ,  Chun-Yuan Wu ,  Teng-Chun Tsai ,  Chih-Chien Liu

IPC: H01L29/04 ,  H01L29/76 ,  H01L29/78 ,  H01L21/8234 ,  H01L27/108 ,  H01L29/66 ,  H01L21/764 ,  H01L29/165 ,  H01L21/311 ,  H01L29/10 ,  H01L29/16 ,  H01L29/161 ,  H01L21/02 ,  H01L21/3115 ,  H01L21/314 ,  H01L21/318 ,  H01L27/088

CPC classification number: H01L29/785 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02636 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/3115 ,  H01L21/3141 ,  H01L21/3185 ,  H01L21/764 ,  H01L21/823431 ,  H01L21/823437 ,  H01L27/0886 ,  H01L27/10879 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66795

Abstract: A semiconductor structure for forming FinFETs is described. The semiconductor structure includes a semiconductor substrate, a plurality of odd fins of the FinFETs on the substrate, and a plurality of even fins of the FinFETs on the substrate between the odd fins of the FinFETs. The odd fins of the FinFETs are defined from the substrate. The even fins of the FinFETs are different from the odd fins of the FinFETs in at least one of the width and the material, and may be further different from the odd fins of the FinFETs in the height.

Abstract translation: 描述用于形成FinFET的半导体结构。 半导体结构包括半导体衬底，衬底上的FinFET的多个奇数鳍片，以及FinFET的奇数鳍片之间的衬底上的FinFET的多个偶数鳍片。 FinFET的奇数鳍从衬底定义。 FinFET的均匀鳍片与宽度和材料中的至少一个中的FinFET的奇数鳍不同，并且可以与FinFET的高度的奇数鳍不同。

公开(公告)号：US08951884B1

公开(公告)日：2015-02-10

申请号：US14079648

申请日：2013-11-14

Applicant: United Microelectronics Corp.

Inventor： Hung-Lin Shih ,  Jei-Ming Chen ,  Chih-Chien Liu ,  Chin-Fu Lin ,  Kuan-Hsien Li

IPC: H01L21/76 ,  H01L29/423 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/306

CPC classification number: H01L21/30604 ,  H01L21/823431 ,  H01L21/823462 ,  H01L29/401

Abstract: A method for forming a FinFET structure includes providing a substrate, a first region and a second region being defined on the substrate, a first fin structure and a second fin structure being disposed on the substrate within the first region and the second region respectively. A first oxide layer cover the first fin structure and the second fin structure. Next a first protective layer and a second protective layer are entirely formed on the substrate and the first oxide layer in sequence, the second protective layer within the first region is removed, and the first protective layer within the first region is then removed. Afterwards, the first oxide layer covering the first fin structure and the second protective layer within the second region are removed simultaneously, and a second oxide layer is formed to cover the first fin structure.

Abstract translation: 一种用于形成FinFET结构的方法包括提供衬底，第一区和限定在衬底上的第二区，分别在第一区和第二区内的衬底上设置第一鳍结构和第二鳍结构。 第一氧化物层覆盖第一鳍结构和第二鳍结构。 接下来，依次在基板和第一氧化物层上完全形成第一保护层和第二保护层，去除第一区域内的第二保护层，然后去除第一区域内的第一保护层。 之后，同时除去覆盖第二区域内的第一鳍结构和第二保护层的第一氧化物层，形成第二氧化物层以覆盖第一鳍结构。