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    Method of producing device having minute structure
    61.
    发明授权
    Method of producing device having minute structure 失效
    具有微小结构的装置的制造方法

    公开(公告)号：US5731229A

    公开(公告)日：1998-03-24

    申请号：US495273

    申请日：1995-06-27

    Applicant: Makiko Kato ,  Yasukazu Iwasaki ,  Makoto Uchiyama

    Inventor： Makiko Kato ,  Yasukazu Iwasaki ,  Makoto Uchiyama

    IPC: B81B3/00 ,  B05D7/22

    CPC classification number: B81C1/00896 ,  B81C2201/053 ,  B81C2201/056

    Abstract: A method of producing a device having a minute structure such as a semiconductor element. The producing method comprises the following steps: (a) forming a film of liquid containing a sublimable material on a surface of a product of the device, the sublimable material being solid ordinary temperature and at normal pressure, the minute structure being formed at the surface of the product; (b) improving a wettability of at least one of the minute structure and a region surrounding the minute structure by the liquid film of the sublimable material; (c) converting the liquid film into a state containing the sublimable material in solid phase so as to form a protective film; and (d) vaporizing the protective film to be removed.

    Abstract translation: 一种具有半导体元件等微结构的元件的制造方法。 该制造方法包括以下步骤：（a）在装置的产品的表面上形成含有可升华材料的液体，升华材料为常温常压，微细结构形成在表面 的产品; （b）通过升华材料的液膜改善微小结构和微小结构周围区域中的至少一个的润湿性; （c）将液膜转化成固相含有可升华材料的状态，形成保护膜; 和（d）蒸发要除去的保护膜。

    Method of making a micromechanical electric shunt
    62.
    发明授权
    Method of making a micromechanical electric shunt 失效
    制造微机电分路的方法

    公开(公告)号：US4674180A

    公开(公告)日：1987-06-23

    申请号：US606065

    申请日：1984-05-01

    Applicant: Paul M. Zavracky ,  Richard H. Morrison, Jr.

    Inventor： Paul M. Zavracky ,  Richard H. Morrison, Jr.

    IPC: B81B3/00 ,  G06K19/067 ,  H01H1/00 ,  H01H11/00 ,  H01H11/04

    CPC classification number: B81C1/0015 ,  G06K19/067 ,  H01H1/0036 ,  B81B2203/0353 ,  B81C2201/056 ,  Y10T29/49105 ,  Y10T29/49224

    Abstract: A micromechanical electric shunt is fabricated by micromachining according to recent IC fabrication procedures. A plurality of such shunts is incorporated on a single substrate to form novel process station or post identification or signature encoding apparatus for use on a telecommunications bus or the equivalent. Such identification of signature encoding apparatus may be configured for conventional binary coding. Both frequency and current derivative mode apparatus are disclosed.

    Abstract translation: 根据最近的IC制造程序通过微加工制造微机电分流器。 多个这样的分流器被并入单个基板上以形成用于在电信总线上或其等效物上使用的新的处理站或站点标识或签名编码设备。 签名编码装置的这种识别可以被配置用于传统的二进制编码。 公开了频率和电流导数模式装置。

    Integration of electromechanical and CMOS devices in front-end-of-line using replacement metal gate process flow
    70.
    发明授权
    Integration of electromechanical and CMOS devices in front-end-of-line using replacement metal gate process flow 有权
    使用替代金属浇口工艺流程将机电和CMOS器件集成在前端

    公开(公告)号：US09505611B1

    公开(公告)日：2016-11-29

    申请号：US14814083

    申请日：2015-07-30

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Fei Liu ,  Qiqing C. Ouyang ,  Keith Kwong Hon Wong

    IPC: B81C1/00 ,  H01L29/66 ,  B81B7/00

    CPC classification number: B81C1/00246 ,  B81B7/008 ,  B81B2203/0118 ,  B81B2207/015 ,  B81B2207/07 ,  B81C2201/0132 ,  B81C2201/056 ,  B81C2203/0714 ,  H01L27/0617 ,  H01L29/66545

    Abstract: Semiconductor devices and methods are provided for integrally forming electromechanical devices (e.g. MEMS or NEMS devices) with CMOS devices in a FEOL (front-end-of-line) structure as part of a replacement metal gate process flow. For example, a method includes forming an electromechanical device in a first device region of a substrate and forming a transistor device in a second device region of the substrate. The electromechanical device includes a sacrificial anchor structure and a sacrificial cantilever structure formed of a sacrificial material. The transistor device includes a sacrificial gate electrode structure formed of the sacrificial material. A replacement metal gate process is performed to replace the sacrificial gate electrode structure of the transistor device with a metallic gate electrode, and to replace the sacrificial anchor structure and the sacrificial cantilever structure with a metallic anchor structure and a metallic cantilever structure. A release process is performed to release the metallic cantilever structure.

    Abstract translation: 提供半导体器件和方法，用于在作为替代金属栅极工艺流程的一部分的FEOL（前端线）结构中与CMOS器件一体地形成机电装置（例如MEMS或NEMS器件）。 例如，一种方法包括在衬底的第一器件区域中形成机电器件，并在衬底的第二器件区域中形成晶体管器件。 机电装置包括牺牲锚结构和由牺牲材料形成的牺牲悬臂结构。 晶体管器件包括由牺牲材料形成的牺牲栅电极结构。 执行替换金属栅极处理以用金属栅极电极代替晶体管器件的牺牲栅电极结构，并用金属锚结构和金属悬臂结构代替牺牲锚结构和牺牲悬臂结构。 执行释放过程以释放金属悬臂结构。

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