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公开(公告)号：US6084245A
公开(公告)日：2000-07-04
申请号：US45853
申请日：1998-03-23
Applicant: David S. Y. Hsu , Henry F. Gray
Inventor： David S. Y. Hsu , Henry F. Gray
CPC classification number: H01J3/022 , H01J2201/30423 , H01J2201/30446
Abstract: A field emitter cell includes a thin film edge emitter normal to a gate layer. The field emitter is a multilayer structure including a low work function material sandwiched between two protective layers. The field emitter may be fabricated from a composite starting structure including a conductive substrate layer, an insulation layer, a standoff layer and a gate layer, with a perforation extending from the gate layer into the substrate layer. The emitter material is conformally deposited by chemical beam deposition along the sidewalls of the perforation. Alternatively, the starting material may be a conductive substrate having a protrusion thereon. The emitter layer, standoff layer, insulation layer, and gate layer are sequentially deposited, and the unwanted portions of each are preferentially removed to provide the desired structure.
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公开(公告)号：US6005335A
公开(公告)日：1999-12-21
申请号：US990624
申请日：1997-12-15
Applicant: Michael D Potter
Inventor： Michael D Potter
CPC classification number: H01J29/94 , H01J2201/30423 , H01J2329/00
Abstract: A self-gettering electron field emitter has a first portion formed of a low-work-function material for emitting electrons, and it has an integral second portion that acts both as a low-resistance electrical conductor and as a gettering surface. The self-gettering emitter is formed by disposing a thin film of the low-work-function material parallel to a substrate and by disposing a thin film of the low-resistance gettering material parallel to the substrate and in contact with the thin film of the low-work-function material. The self-gettering emitter is particularly suitable for use in lateral field emission devices. The preferred emitter structure has a tapered edge, with a salient portion of the low-work-function material extending a small distance beyond an edge of the gettering and low resistance material. A fabrication process specially adapted for in situ formation of the self-gettering electron field emitters while fabricating microelectronic field emission devices is also disclosed.
Abstract translation: 自吸电子场发射器具有由用于发射电子的低功函数材料形成的第一部分，并且其具有作为低电阻电导体和吸气表面的整体第二部分。 自吸收发射体通过将低功函数材料的薄膜平行于衬底设置并且将低电阻吸气材料的薄膜平行于衬底设置并与薄膜接触而形成 低功能材料。 自吸式发射器特别适用于横向场发射装置。 优选的发射极结构具有锥形边缘，低功函数材料的显着部分在吸气和低电阻材料的边缘之外延伸一小段距离。 还公开了专门用于在制造微电子场发射器件的同时形成自吸电子场发射体的制造工艺。
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公开(公告)号：US5818166A
公开(公告)日：1998-10-06
申请号：US678433
申请日：1996-07-03
CPC classification number: H01J1/3042 , H01J2201/30423
Abstract: Thin-film edge emission devices and methods for forming are provided. The emitters are formed to have extended edges. They are formed by oblique deposition on a surface of material which extends from a substrate. The material is substantially removed to leave the thin-film emitter. A gate may then be formed around the emitter. Arrays of such thin-film emitters may be used in a variety of electronic devices.
Abstract translation: 提供薄膜边缘发射装置和形成方法。 发射器形成为具有延伸的边缘。 它们通过在从衬底延伸的材料的表面上的倾斜沉积形成。 基本上去除了材料以离开薄膜发射器。 然后可以围绕发射器形成栅极。 这种薄膜发射体的阵列可以用于各种电子装置。
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公开(公告)号：US5769679A
公开(公告)日：1998-06-23
申请号：US710528
申请日：1996-09-18
Applicant: Jong-Moon Park , Yeong-Cheol Hyeon , Kee-Soo Nam
Inventor： Jong-Moon Park , Yeong-Cheol Hyeon , Kee-Soo Nam
CPC classification number: H01J9/025 , H01J2201/30423
Abstract: In a method, a film for a gate electrode, exposed through the sidewall of a trench, is thermally treated to grow a thermal oxide film which is, then, removed at the lateral side of the gate electrode, to spatially separate the gate electrode from the gate insulating film in space. This method precisely controls the thermal oxide film formed at the lateral side of the gate electrode, so that the distance between the gate electrode and the electron emission cathode can be accurately adjusted. The electron emission cathodes are homogeneous in shape. Also, the reliability of the display can be improved since a silicide metal is formed on the electron emission cathodes.
Abstract translation: 在一种方法中，通过沟槽的侧壁暴露的用于栅电极的膜被热处理以生长热氧化膜，然后在栅电极的横向侧被去除，以将栅电极与空穴分离 栅极绝缘膜在空间。 该方法精确地控制在栅电极的侧面形成的热氧化膜，从而可以精确地调节栅电极和电子发射阴极之间的距离。 电子发射阴极的形状是均匀的。 此外，由于在电子发射阴极上形成硅化物金属，所以可以提高显示器的可靠性。
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公开(公告)号：US5742121A
公开(公告)日：1998-04-21
申请号：US658296
申请日：1996-06-05
Applicant: David S. Y. Hsu , Henry F. Gray
Inventor： David S. Y. Hsu , Henry F. Gray
CPC classification number: H01J9/025 , H01J1/3042 , H01J2201/30423 , H01J2201/319
Abstract: A thin-film edge field emitter device includes a substrate having a first rtion and having a protuberance extending from the first portion, the protuberance defining at least one side-wall, the side-wall constituting a second portion. An emitter layer is disposed on the substrate including the second portion, the emitter layer being selected from the group consisting of semiconductors and conductors and is a thin-film including a portion extending beyond the second portion and defining an exposed emitter edge. A pair of supportive layers is disposed on opposite sides of the emitter layer, the pair of supportive layers each being selected from the group consisting of semiconductors and conductors and each having a higher work function than the emitter layer.
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Patent Agency Ranking
公开(公告)号：US5618216A
公开(公告)日：1997-04-08
申请号：US459033
申请日：1995-06-02
Applicant: Michael D. Potter
Inventor： Michael D. Potter
CPC classification number: H01J9/025 , H01J3/022 , H01J2201/30423 , H01J2209/385
Abstract: A field emission device (10) is made with a lateral emitter (100) substantially parallel to a substrate (20) and with a simplified anode stucture (70). The lateral-emitter field-emission device has a thin-film emitter cathode (100) which has a thickness not exceeding several hundred angstroms and has an emitting blade edge or tip (110) having a small radius of curvature. The anode's top surface is precisely spaced apart from and below the plane of the lateral emitter and receives electrons emitted by field emission from the blade edge or tip of the lateral-emitter cathode, when a suitable bias voltage is applied. A fabrication process is disclosed using process steps (S1-S18) similar to those of semiconductor integrated circuit fabrication to produce the novel devices and their arrays. Various embodiments of the fabrication process allow the use of conductive or insulating substrates (20) and allow fabrication of devices having various functions and complexity. The anode (70) is simply fabricated, without the use of prior-art processes which formed a spacer made by a conformal coating. In a preferred fabrication process for the simplified anode device, the following steps are performed: an anode film (70) is deposited; an insulator film (90) is deposited over the anode film; an ultra-thin conductive emitter film (100) is deposited over the insulator and patterned; a trench opening (160) is etched through the emitter and insulator, stopping at the anode film, thus forming and automatically aligning an emitting edge of the emitter; and means are provided for applying an electrical bias to the emitter and anode, sufficient to cause field emission of electrons from the emitting edge of the emitter to the anode. The anode film may comprise a phosphor (75) for a device specially adapted for use in a field emission display. The fabrication process may also include steps to deposit additional insulator films (130) and to deposit additional conductive films for control electrodes (140), which are automatically aligned with the emitter blade edge or tip (110).
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公开(公告)号：US09396901B2
公开(公告)日：2016-07-19
申请号：US14474213
申请日：2014-09-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Donggu Lee , Shanghyeun Park , Yongchul Kim , Ilhwan Kim , Taewon Jeong
CPC classification number: H01J9/025 , H01J1/3046 , H01J2201/30423 , H01J2201/30461
Abstract: A field emission device may comprise: an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode; an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; and/or a gate electrode around the opening. The electron emission source may comprise a plurality of graphene thin films vertically supported in the cathode electrode toward the opening.
Abstract translation: 场发射器件可以包括：发射器，包括阴极电极和由阴极电极支撑的电子发射源; 围绕发射极的绝缘间隔物，绝缘间隔物形成作为从电子发射源发射的电子的路径的开口; 和/或围绕开口的栅电极。 电子发射源可以包括在阴极中朝向开口垂直支撑的多个石墨烯薄膜。
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公开(公告)号：US20160196948A1
公开(公告)日：2016-07-07
申请号：US15067272
申请日：2016-03-11
Inventor： HONG KOO KIM , SIWAPON SRISONPHAN
IPC: H01J1/304 , H01L31/0224 , H01L31/101 , H01L27/146 , H01J19/24 , H01L31/062
CPC classification number: H01J1/3046 , H01J1/3042 , H01J3/022 , H01J19/24 , H01J2201/30423 , H01L27/1446 , H01L27/146 , H01L29/66181 , H01L29/66439 , H01L29/7613 , H01L29/94 , H01L31/022466 , H01L31/06 , H01L31/062 , H01L31/08 , H01L31/101 , H01L31/113 , Y02E10/50
Abstract: An electronic device including a first conducting layer, a second conducting layer, and an insulating layer provided between the conducting layers. At least one side wall extends from the first conducting layer to the second conducting layer and includes at least a portion of the first conducting layer, the second conducting layer and the insulating layer. A bias voltage is applied between the first and second conducting layers, wherein responsive to the bias voltage, a two dimensional electron system is induced at least in one of the first conducting layer and the second conducting layer, and wherein electrons from the two dimensional electron system are emitted from the side wall side wall as a result of Coulombic repulsion and travel in air from the one of the first conducting layer and the second conducting layer to the other of the first conducting layer and the second conducting layer.
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69.发明授权Method of fabricating electron-emitting device and method of manufacturing image display apparatus 失效制造电子发射器件的方法和制造图像显示装置的方法公开(公告)号：US08388400B2
公开(公告)日：2013-03-05
申请号：US12627982
申请日：2009-11-30
Applicant: Naofumi Aoki , Shoji Nishida
Inventor： Naofumi Aoki , Shoji Nishida
CPC classification number: H01J9/025 , H01J1/304 , H01J1/3044 , H01J1/3046 , H01J31/127 , H01J2201/30423 , H01J2201/30426 , H01J2201/30446 , H01J2201/30492 , H01J2201/30496 , H01J2329/0423 , H01J2329/0439 , H01J2329/0471 , H01J2329/0473
Abstract: The following method is provided: a method of readily fabricating an electron-emitting device, coated with a low-work function material, having good electron-emitting properties with high reproducibility such that differences in electron-emitting properties between electron-emitting devices are reduced. Before a structure is coated with the low-work function material, a metal oxide layer is formed on the structure.
Abstract translation: 提供以下方法：容易地制造涂覆有低功函数材料的电子发射器件的方法，其具有良好的电子发射特性，具有高重现性，使得电子发射器件之间电子发射特性的差异减小 。 在用低功函数材料涂覆结构之前，在结构上形成金属氧化物层。
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公开(公告)号：US08120550B2
公开(公告)日：2012-02-21
申请号：US11499841
申请日：2006-08-04
Applicant: Frank J. DiSanto , Denis A. Krusos
Inventor： Frank J. DiSanto , Denis A. Krusos
IPC: G09G3/20
CPC classification number: G09G3/22 , G09G2300/0842 , H01J29/04 , H01J29/96 , H01J31/127 , H01J2201/30423 , H01J2201/319
Abstract: The present invention relates to a display device that employs edge emitters as a source for pixel electrons. The edge emitters allow the viewing glass plate to be made very small or eliminated, thereby substantially reducing the size of or eliminating the spacers typically utilized in conventional display devices and thereby enabling a simple and compact assembly structure. In one embodiment a pixel configuration comprises a phosphor area disposed between a plurality edge emitters, each of which are associated with tynes that are adapted to reduce the distance between the emitters and that separate the phosphor area into segments such that the emitters emit electrons when the voltage between a phosphor segment and the an emitter exceed a threshold voltage to cause the phosphor segment to emit light.
Abstract translation: 本发明涉及采用边缘发射器作为像素电子源的显示装置。 边缘发射器允许观察玻璃板制造得非常小或被消除，从而大大减小了常规显示装置中通常使用的间隔物的尺寸或消除间隔物，从而使得能够实现简单和紧凑的组装结构。 在一个实施例中，像素配置包括设置在多个边缘发射器之间的磷光体区域，每个发射器与适于减小发射器之间的距离的泰恩相关联，并且将磷光体区域分成段，使得当 荧光体区段和发射极之间的电压超过阈值电压以使荧光体区段发光。
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