Abstract:
This invention relates an ion beam source (10) for use with a non-electrical conducting target (14) including a grid (13) for extracting ions and a power supply for supplying pass power to the grid (13) to extract the ions.
Abstract:
When conditions for an electron gun mainly represented by extraction voltage V1 and accelerating voltage V0 are changed, a charged particle beam is once focused on a fixed position by means of a condenser lens and a virtual cathode position is calculated from a lens excitation of the condenser lens at that time and the mechanical positional relation of the electron gun to set an optical condition. For more accurate setting of the optical condition, a deflecting electrode device is provided at a crossover position of the condenser lens and a voltage is applied to the deflecting electrode device at a constant period so as to control the lens excitation of the condenser lens such that the amount of movement of an image is minimized on an image display unit such as CRT.
Abstract:
A scanning particle beam instrument is provided, the instrument including a scanner, a radiation detector and a DC amplifier, the DC amplifier being operable to amplify a signal generated by the radiation detector to produce a video signal, the instrument further including a controller operable to so direct the beam relative to a specimen, or to determine when the beam is so directed relative to a specimen, that an actual video signal produced by the DC amplifier may be compared with a desired video signal, to compare actual and desired video signals and to adjust a DC offset of the DC amplifier so as to reduce a difference between the signals. Also provided is a method of producing a video signal using such an instrument.
Abstract:
An exposure apparatus which draws a pattern on a substrate with a charged particle beam is disclosed. The exposure apparatus includes a blanker which controls, in accordance with a dose pattern including a plurality of pulses, whether to allow a charged particle beam to strike the substrate, and a controller which executes calibration for correcting the dose pattern to obtain a pattern having the target line width.
Abstract:
A direct-write electron beam lithography system employing a patterned beam-defining aperture to enable the generation of high current-density shaped beams without the need for multiple beam-shaping apertures, lenses and deflectors is disclosed. Beam blanking is accomplished without the need for an intermediate crossover between the electron source and the wafer being patterned by means of a double-deflection blanker, which also facilitates proximity effect correction. A simple type of “moving lens” is utilized to eliminate off-axis aberrations in the shaped beam. A method for designing the patterned beam-defining aperture is also disclosed.
Abstract:
A scanning particle beam instrument is provided, the instrument including a scanner, a radiation detector and a DC amplifier, the DC amplifier being operable to amplify a signal generated by the radiation detector to produce a video signal, the instrument further including a controller operable to so direct the beam relative to a specimen, or to determine when the beam is so directed relative to a specimen, that an actual video signal produced by the DC amplifier may be compared with a desired video signal, to compare actual and desired video signals and to adjust a DC offset of the DC amplifier so as to reduce a difference between the signals. Also provided is a method of producing a video signal using such an instrument.
Abstract:
A focused ion beam apparatus having two pieces of probers brought into contact with two points of a surface of a sample, a voltage source for applying a constant voltage between the two points with which the probers are brought into contact, and an ammeter for measuring a current flowing between the two points, in which a conductive film is formed to narrow a gap thereof between the two points by operating a deflection electrode and a gas gun and the current flowing between the two points is monitored, and when the current becomes a predetermined value, a focused charged particle beam irradiated to the surface of the sample is made OFF by the blanking electrode.
Abstract:
Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.
Abstract:
Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.
Abstract:
In an electron beam lithography apparatus having an electron gun for producing an electron beam, an electron beam shaping lens and a deflector for deflecting the electron beam in accordance with a pattern to be drawn on an object, a blanking electrode unit and a stop electrode unit having an aperture therein are provided so that when a pattern need not be drawn the electron beam is deviated by the blanking electrode unit away from the aperture in the stop electrode unit. In one embodiment, the stop electrode unit serves to detect the amount of that portion of the electron beam which does not pass through the aperture so that a detection value corresponding to the detected amount of the electron beam is compared with a reference value. When the detection value exceeds the reference value, it is determined that a shot of pattern drawing is effected with the electron beam.