Abstract:
Systems and methods for implementing charged particle flooding in a charged particle beam apparatus are disclosed. According to certain embodiments, a charged particle beam system includes a charged particle source and a controller which controls the charged particle beam system to emit a charged particle beam in a first mode where the beam is defocused and a second mode where the beam is focused on a surface of a sample.
Abstract:
In some embodiments, a system for measuring magnetic fields produced within a microscope comprising an electromagnetic lens includes a sensor support element configured to be mounted to a distal end of an elongated support member that is configured to be inserted into the microscope, and a magnetic field sensor supported by the sensor support element, the magnetic field sensor being configured to sense magnetic fields at a position within the electron microscope at which specimens are imaged during operation of the microscope.
Abstract:
The present invention has for its object to provide a charged particle beam irradiation method and a charged particle beam apparatus which can suppress unevenness of electrification even when a plurality of different kinds of materials are contained in a pre-dosing area or degrees of density of patterns inside the pre-dosing area differs with positions.To accomplish the above object, a charged particle beam irradiation method and a charged particle beam apparatus are provided according to which the pre-dosing area is divided into a plurality of divisional areas and electrifications are deposited to the plural divisional areas by using a beam under different beam irradiation conditions. With the above construction, the electrifications can be deposited to the pre-dosing area on the basis of such an irradiation condition that the differences in electrification at individual positions inside the pre-dosing area can be suppressed and consequently, an influence an electric field has upon the charged particle beam and electrons given off from the sample can be suppressed.
Abstract:
Chirality distribution in the molecular structure of protein or the like and magnetic domain structure are analyzed with high resolution less than 10 nm. A transmission electron microscope equipped with a spin-polarized electron source is used for holography observation. The phase of transmission spin-polarized electrons changes due to the existence of chirality structure or magnetization in a sample, which is observed as an interference pattern phase shift in holography measurement.
Abstract:
Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.
Abstract:
An inspection apparatus by an electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical system; a stage system 50 for holding and moving the object relative to the electron-optical system; a mini-environment chamber 20 for supplying a clean gas to the object to prevent dust from contacting to the object; a working chamber 31 for accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambers 41, 42 disposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loader 60 for transferring the object to the stage system through the loading chambers.
Abstract:
Electron beam apparatus for use in testing integrated circuits uses a magnetic electron objective lens having a first end adjacent the circuit under test and a second end remote from the circuit. The magnetic field of the lens increases steeply to a maximum near the first end and falls gradually towards the second end. Secondary electrons emitted from the circuit are accelerated strongly by an electrostatic field into the first end of the lens and are retarded abruptly to speeds of the same order as their emission speeds in the region of maximum magnetic field. Further gradual retardation of the electrons takes place so that the electrons approach the second end of the lens parallel to the axis of the lens at substantially their emission speeds. A filter grid located at the second end of the lens and a collector of electrons passing through the filter grid enable the emission speeds of the secondary electrons to be measured.
Abstract:
A method for setting voltage resolution in particle beam measuring devices wherein band width of a measured signal processing is modified. In order to set a desired voltage resolution simply, reliably, and with high precision, a signal noise of the measured signal is measured. This signal noise is compared to a desired value for the measured signal resolution, and the band width of the measured signal processing is modified such that the signal noise of the measured signal is less than or equal to the desired value for the measured signal resolution.
Abstract:
Electron beam apparatus includes a voltage measuring electron collector including solid electrodes with central apertures. The electrodes comprise a corrector electrode (63) maintained at zero volts, an extractor electrode (15) at about 5 kilovolts positive, a filter electrode (16) which has an internally tapered tubular central part (67), a mirror electrode (64) and a scintillator (17) in the annular space between the mirror electrode and the filter electrode.