Electron Beam Irradiation Method and Scanning Electron Microscope
    3.
    发明申请
    Electron Beam Irradiation Method and Scanning Electron Microscope 有权
    电子束照射方法和扫描电子显微镜

    公开(公告)号:US20130009057A1

    公开(公告)日:2013-01-10

    申请号:US13580288

    申请日:2011-02-09

    Abstract: The present invention has for its object to provide a charged particle beam irradiation method and a charged particle beam apparatus which can suppress unevenness of electrification even when a plurality of different kinds of materials are contained in a pre-dosing area or degrees of density of patterns inside the pre-dosing area differs with positions.To accomplish the above object, a charged particle beam irradiation method and a charged particle beam apparatus are provided according to which the pre-dosing area is divided into a plurality of divisional areas and electrifications are deposited to the plural divisional areas by using a beam under different beam irradiation conditions. With the above construction, the electrifications can be deposited to the pre-dosing area on the basis of such an irradiation condition that the differences in electrification at individual positions inside the pre-dosing area can be suppressed and consequently, an influence an electric field has upon the charged particle beam and electrons given off from the sample can be suppressed.

    Abstract translation: 本发明的目的是提供一种带电粒子束照射方法和带电粒子束装置,其即使在预给料区域中包含多种不同种类的材料或图案密度程度时也能抑制通电不均匀性 预给药区域内的位置与位置不同。 为了实现上述目的,提供一种带电粒子束照射方法和带电粒子束装置,根据该装置,预给料区域被分成多个分区,并且通过使用下面的束将电气沉积到多个分区域 不同的束照射条件。 通过上述结构,可以基于这样一种照射条件将电气沉积到预给料区域,即可以抑制预给料区域内各个位置的通电差异,从而影响电场 可以抑制带电粒子束和从样品发出的电子。

    Method of inspecting pattern and inspecting instrument
    5.
    发明授权
    Method of inspecting pattern and inspecting instrument 失效
    检查模式和检验仪器的方法

    公开(公告)号:US07375538B2

    公开(公告)日:2008-05-20

    申请号:US11166231

    申请日:2005-06-27

    Applicant: Mari Nozoe

    Inventor: Mari Nozoe

    Abstract: Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.

    Abstract translation: 电子束在连接点成为向后偏置的状态下以预定间隔在步骤中照射到晶片,并且监视在向后偏置中减轻电荷的时间段的特性差。 结果,在比正常部分短的时间段内产生结漏电的位置处的电荷被减轻,因此在正常部分和失效部分之间产生电位差,并且在潜在对比图像中观察到电荷 作为亮度的差异。 通过连续重复获取图像的操作,实时执行图像处理并存储失败部分的位置和亮度,可以执行指定区域的自动检查。 故障部分的图像,亮度和分布信息在检查后自动保存并输出。

    Electron beam apparatus and method for detecting secondary electrons
    7.
    发明授权
    Electron beam apparatus and method for detecting secondary electrons 失效
    用于检测二次电子的电子束装置和方法

    公开(公告)号:US4982091A

    公开(公告)日:1991-01-01

    申请号:US130716

    申请日:1987-12-09

    CPC classification number: H01J37/14 H01J37/05 H01J37/266

    Abstract: Electron beam apparatus for use in testing integrated circuits uses a magnetic electron objective lens having a first end adjacent the circuit under test and a second end remote from the circuit. The magnetic field of the lens increases steeply to a maximum near the first end and falls gradually towards the second end. Secondary electrons emitted from the circuit are accelerated strongly by an electrostatic field into the first end of the lens and are retarded abruptly to speeds of the same order as their emission speeds in the region of maximum magnetic field. Further gradual retardation of the electrons takes place so that the electrons approach the second end of the lens parallel to the axis of the lens at substantially their emission speeds. A filter grid located at the second end of the lens and a collector of electrons passing through the filter grid enable the emission speeds of the secondary electrons to be measured.

    Abstract translation: 用于测试集成电路的电子束装置使用具有与被测电路相邻的第一端和远离电路的第二端的磁性电子物镜。 透镜的磁场在第一端附近急剧增加到最大值,并逐渐向第二端逐渐下降。 从电路发射的二次电子被静电场强烈加速到透镜的第一端,并且突然延迟到与其在最大磁场区域的发射速度相同的速度。 发生电子的进一步的逐渐延迟,使得电子基本上以其发射速度接近平行于透镜的轴的透镜的第二端。 位于透镜第二端处的滤光器栅格和通过滤光栅的电子收集器能够测量二次电子的发射速度。

    Method for automatically setting the voltage resolution in particle beam
measuring devices and apparatus for implementation thereof
    8.
    发明授权
    Method for automatically setting the voltage resolution in particle beam measuring devices and apparatus for implementation thereof 失效
    自动设定粒子束测量装置的电压分辨率的方法及其实施方法

    公开(公告)号:US4686466A

    公开(公告)日:1987-08-11

    申请号:US705983

    申请日:1985-02-27

    CPC classification number: G01R31/305 H01J37/266

    Abstract: A method for setting voltage resolution in particle beam measuring devices wherein band width of a measured signal processing is modified. In order to set a desired voltage resolution simply, reliably, and with high precision, a signal noise of the measured signal is measured. This signal noise is compared to a desired value for the measured signal resolution, and the band width of the measured signal processing is modified such that the signal noise of the measured signal is less than or equal to the desired value for the measured signal resolution.

    Abstract translation: 一种用于设置测量信号处理的带宽被修改的粒子束测量装置中的电压分辨率的方法。 为了简单,可靠地且高精度地设置所需的电压分辨率,测量测量信号的信号噪声。 将该信号噪声与测量信号分辨率的期望值进行比较,并且修改测量信号处理的带宽,使得测量信号的信号噪声小于或等于测量信号分辨率的期望值。

    Electron beam apparatus and electron collectors therefor
    9.
    发明授权
    Electron beam apparatus and electron collectors therefor 失效
    电子束装置及其收集器

    公开(公告)号:US4587425A

    公开(公告)日:1986-05-06

    申请号:US595569

    申请日:1984-03-06

    Inventor: Graham S. Plows

    Abstract: Electron beam apparatus includes a voltage measuring electron collector including solid electrodes with central apertures. The electrodes comprise a corrector electrode (63) maintained at zero volts, an extractor electrode (15) at about 5 kilovolts positive, a filter electrode (16) which has an internally tapered tubular central part (67), a mirror electrode (64) and a scintillator (17) in the annular space between the mirror electrode and the filter electrode.

    Abstract translation: PCT No.PCT / GB83 / 00174 Sec。 371日期1984年3月6日 102(e)日期1984年3月6日PCT提交1983年7月15日PCT公布。 公开号WO84 / 00443 日期:1984年2月2日。电子束装置包括电压测量电子收集器,其包括具有中心孔的固体电极。 电极包括保持在零伏特的校正器电极(63),大约5千伏正的提取器电极(15),具有内锥形管状中心部分(67)的过滤电极(16),镜电极(64) 以及在镜电极和滤光片电极之间的环形空间中的闪烁体(17)。

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