公开(公告)号：US08034181B2

公开(公告)日：2011-10-11

申请号：US11679979

申请日：2007-02-28

Applicant: Takumi Tandou ,  Ken'etsu Yokogawa ,  Masaru Izawa

Inventor： Takumi Tandou ,  Ken'etsu Yokogawa ,  Masaru Izawa

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01J37/32431 ,  H01J2237/2001 ,  H01L21/67109

Abstract: A plasma processing apparatus includes a processing chamber encased in a vacuum vessel equipped with an evacuator; a sample stage located in the processing chamber and having an upper surface on which a sample as an object to be processed rests; a gas feeding unit for feeding processing gas into the processing chamber; a plurality of refrigerant ducts which are laid out in the internal of the sample stage and through which liquid refrigerant flows and can be evaporated; a cooling circuit including a compressor, a condenser, an expansion valve and a set of pipelines to connect the compressor, the condenser and the expansion valve in this order; and a selecting unit for selectively feeding the refrigerant through the plural refrigerant ducts in the different steps of the processing. The sample is processed by using plasma while the temperature of the sample stage is being controlled by the cooling circuit.

Abstract translation: 等离子体处理装置包括：装在真空容器中的处理室，该真空容器装备有排气装置; 位于所述处理室中并具有上表面的样品台，作为待处理物体的样品在该上表面上; 用于将处理气体供给到处理室中的气体供给单元; 多个制冷剂管道，其布置在样品台的内部，并且液体制冷剂通过该制冷剂流动并且可以蒸发; 包括压缩机，冷凝器，膨胀阀和一组管道的冷却回路，以按顺序连接压缩机，冷凝器和膨胀阀; 以及选择单元，用于在处理的不同步骤中选择性地将制冷剂供给到多个制冷剂管道中。 通过使用等离子体处理样品，同时样品台的温度由冷却回路控制。

公开(公告)号：US20110240881A1

公开(公告)日：2011-10-06

申请号：US13047018

申请日：2011-03-14

Applicant: Hiroya Miyazaki

Inventor： Hiroya Miyazaki

IPC: G21K5/08

CPC classification number: H01J37/20 ,  H01J2237/026 ,  H01J2237/2001 ,  H01J2237/202 ,  H01J2237/204 ,  H01J2237/26 ,  H01J2237/2802

Abstract: The present disclosure significantly reduces the waiting time from inserting a specimen holder into an electron microscope until high quality data acquisition is possible. Characterizing the present disclosure, it is a specimen holder partly made of low thermal expansion material. The low thermal expansion material can be any of group 4, 5 or 6 in the periodic table of the elements.

Abstract translation: 本公开显着地减少了将样品架插入电子显微镜直到高质量数据采集成为可能的等待时间。 表征本公开，它是部分由低热膨胀材料制成的试样保持器。 低热膨胀材料可以是元素周期表中的4,5,6族中的任何一种。

公开(公告)号：US08020398B2

公开(公告)日：2011-09-20

申请号：US12243983

申请日：2008-10-02

Applicant: Roger B. Fish ,  Robert J. Mitchell

Inventor： Roger B. Fish ,  Robert J. Mitchell

IPC: C23F1/00

CPC classification number: H01L21/67213 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0216 ,  H01J2237/2001 ,  H01L21/67109 ,  Y10T279/23

Abstract: The fluid delivery mechanism of the present disclosure provides a solution for use in a single axis of motion that allows the connection of one or more fluid flow paths over a wide range of temperatures into a vacuum environment. The mechanism does not employ flexible tubing that is prone to fatigue, especially at very low temperatures. In one embodiment, a tube is axially moved within a sealed piston to allow for fluid delivery. In a second embodiment, bellows are used to provide the required functionality. In another embodiment, it is possible to achieve movement in two or more axis of motion by utilizing two or more appropriately configured mechanisms.

Abstract translation: 本公开的流体输送机构提供了用于单个运动轴线的解决方案，其允许在宽范围的温度下将一个或多个流体流动路径连接到真空环境中。 该机构不使用容易疲劳的柔性管，特别是在非常低的温度下。 在一个实施例中，管在密封活塞内轴向移动以允许流体输送。 在第二实施例中，波纹管用于提供所需的功能。 在另一个实施例中，可以通过利用两个或更多个适当配置的机构实现两个或更多个运动轴的运动。

公开(公告)号：US20110220288A1

公开(公告)日：2011-09-15

申请号：US13042799

申请日：2011-03-08

Applicant: Atsushi Kobayashi ,  Hideki Wakai

Inventor： Atsushi Kobayashi ,  Hideki Wakai

IPC: C23F1/08 ,  F25B29/00

CPC classification number: H01L21/67109 ,  H01J37/20 ,  H01J37/32091 ,  H01J2237/2001 ,  H01L21/6831

Abstract: There is provided a temperature control system configured to control a temperature of a temperature control target member of a processing chamber for performing a plasma process on a substrate therein. The temperature control system includes a heating unit configured to heat the temperature control target member; a cooling unit configured to cool the temperature control target member by circulating a liquid coolant; and a flow rate control unit configured to control a flow rate of the coolant into the temperature control target member by the cooling unit to a first flow rate when plasma is generated within the processing chamber and to a second flow rate lower than the first flow rate when plasma is not generated within the processing chamber.

Abstract translation: 提供了一种温度控制系统，其被配置为控制用于在其中的衬底上执行等离子体处理的处理室的温度控制目标构件的温度。 温度控制系统包括：加热单元，其构造成加热温度控制对象构件; 冷却单元，其构造成通过使液体冷却剂循环而冷却所述温度控制对象部件; 以及流量控制单元，被配置为当所述处理室内产生等离子体时，将由所述冷却单元输入到所述温度控制对象构件的冷却剂的流量控制为第一流量，以及比所述第一流量低的第二流量 当在处理室内不产生等离子体时。

公开(公告)号：US20110207243A1

公开(公告)日：2011-08-25

申请号：US13091770

申请日：2011-04-21

Applicant: Takumi TANDOU ,  Kenetsu Yokogawa ,  Masaru Izawa

Inventor： Takumi TANDOU ,  Kenetsu Yokogawa ,  Masaru Izawa

IPC: H01L21/02 ,  C23F1/08 ,  H01L21/00

CPC classification number: F25B39/02 ,  F28F2210/02 ,  H01J2237/2001 ,  H01L21/67109

Abstract: There is provided a means for uniformly controlling the in-plane temperature of a semiconductor wafer at high speed in a high heat input etching process. A refrigerant channel structure in a circular shape is formed in a sample stage. Due to a fact that a heat transfer coefficient of a refrigerant is largely changed from a refrigerant supply port to a refrigerant outlet port, the cross sections of the channel structure is structured so as to be increased from a first channel areas towards a second channel areas in order to make the heat transfer coefficient of the refrigerant constant in the refrigerant channel structure. Thereby, the heat transfer coefficient of the refrigerant is prevented from increasing by reducing the flow rate of the refrigerant at a dry degree area where the heat transfer coefficient of the refrigerant is increased. Further, the cross section of the channel structure is structured so as to be reduced from the second channel areas towards a third channel areas, and thereby the heat transfer coefficient of the refrigerant is prevented from decreasing. Accordingly, the heat transfer coefficient of the refrigerant can be uniformed in the channel structure.

Abstract translation: 提供了一种用于在高热输入蚀刻工艺中高速均匀地控制半导体晶片的面内温度的装置。 在样品台中形成圆形的制冷剂流路结构。 由于制冷剂的传热系数从制冷剂供给口向制冷剂排出口发生很大的变化，所以，通道结构的横截面被构造成从第一通道区域向第二通道区域 以使制冷剂流路结构中的制冷剂的传热系数恒定。 因此，通过降低制冷剂的传热系数增加的干燥区域的制冷剂的流量，可以防止制冷剂的传热系数增加。 此外，通道结构的横截面被构造成从第二通道区域朝向第三通道区域减小，从而防止制冷剂的传热系数降低。 因此，制冷剂的传热系数可以在通道结构中均匀化。

公开(公告)号：US07977652B2

公开(公告)日：2011-07-12

申请号：US12569128

申请日：2009-09-29

Applicant: Roger B. Fish ,  Jeffrey E. Krampert

Inventor： Roger B. Fish ,  Jeffrey E. Krampert

IPC: H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/20 ,  H01J2237/022 ,  H01J2237/2001

Abstract: In an ion implanter, one or more optical heaters are disposed above a pair of support arms. The support arms have an engaged positioned which is disposed beneath a platen and a retractable position displaced vertically away from the platen and rotated away from the platen in a direction parallel to a planar surface thereof. When the support arms are in the retracted position, the one or more optical heaters is configured to provide optical energy incident on surfaces of the cooling pads disposed on the support arms for removal of unwanted materials thereon. In this manner, the optical heaters are used during a regeneration cycle of cryogenic surfaces in an ion implanter.

Abstract translation: 在离子注入机中，一对或多个光学加热器设置在一对支撑臂上方。 支撑臂具有接合位置，其设置在压板下方并且垂直远离压板移动并沿平行于其平坦表面的方向远离压板旋转的可缩回位置。 当支撑臂处于缩回位置时，一个或多个光学加热器被配置为提供入射到设置在支撑臂上的冷却垫的表面上的光能，以去除其上的不需要的材料。 以这种方式，在离子注入机的低温表面的再生循环期间使用光学加热器。

公开(公告)号：US20110113858A1

公开(公告)日：2011-05-19

申请号：US12997480

申请日：2009-06-24

Applicant: Jun Takahashi ,  Kazuto Kawakami ,  Haruo Ohmori

Inventor： Jun Takahashi ,  Kazuto Kawakami ,  Haruo Ohmori

IPC: G01N33/00 ,  B65D90/48

CPC classification number: G01N23/2255 ,  H01J37/20 ,  H01J37/285 ,  H01J2237/006 ,  H01J2237/2001

Abstract: A gas charge container includes a sample holder which holds a needle-shaped material, a deutrium gas supply portion which charges a deutrium gas into the needle-shaped material held by the sample holder, and a heating portion which heats the needle-shaped material held by the sample holder. The needle-shaped material is cooled by blocking the heat generated by the heating portion after the needle-shaped material is heated by the heating portion.

Abstract translation: 气体充填容器包括保持针状材料的样品保持器，将正丁烯气体充入到由样品保持器保持的针状材料中的再循环气体供给部分和加热保持的针状材料的加热部分 由样品架。 在针状材料被加热部加热之后，通过阻止由加热部产生的热量来冷却针状材料。

公开(公告)号：US07942969B2

公开(公告)日：2011-05-17

申请号：US11857975

申请日：2007-09-19

Applicant: Martin Riker ,  Wei W. Wang

Inventor： Martin Riker ,  Wei W. Wang

IPC: C23C16/00

CPC classification number: H01J37/32724 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32871 ,  H01J2237/0213 ,  H01J2237/0268 ,  H01J2237/2001 ,  H01J2237/335 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67207 ,  Y10T29/49826

Abstract: A substrate cleaning chamber comprises various components, such as for example, a consumable ceramic liner, substrate heating pedestal, and process kit. The consumable ceramic liner is provided for connecting a gas outlet channel of a remote gas energizer to a gas inlet channel of a substrate cleaning chamber. The substrate heating pedestal comprises an annular plate having a substrate receiving surface with a plurality of ceramic balls positioned in an array of recesses. A process kit comprises a top plate, top liner, gas distributor plate, bottom liner, and focus ring.

Abstract translation: 衬底清洁室包括各种部件，例如可消耗陶瓷衬垫，衬底加热基座和处理套件。 消耗性陶瓷衬套用于将远程气体激发器的气体出口通道连接到衬底清洁室的气体入口通道。 基板加热基座包括具有基板接收表面的环形板，多个陶瓷球定位在凹槽阵列中。 处理套件包括顶板，顶衬，气体分配器板，底衬和聚焦环。

公开(公告)号：US07932733B2

公开(公告)日：2011-04-26

申请号：US12370915

申请日：2009-02-13

Applicant: Masahiro Sasajima ,  Hiroyuki Suzuki

Inventor： Masahiro Sasajima ,  Hiroyuki Suzuki

IPC: G01R31/00 ,  G01R31/10

CPC classification number: G01R31/2891 ,  G01R31/307 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/2001 ,  H01J2237/2065 ,  H01J2237/24564

Abstract: An exemplary apparatus for detecting defect is capable of measuring temperature characteristics of a semiconductor sample without restrictions in the movement range of a sample stage and a probe device by a temperature control device. A heater heats a sample stage, and the sample stage is cooled by a refrigerant contained in a refrigerant container through a heat transfer line connected to the sample stage, a first heat receiving portion connected to the heat transfer line, a second heat receiving portion that is detachable from the heat receiving portion, a heat transfer line connected to the heat receiving portion, and a heat transfer rod connected to the heat transfer line, thereby adjusting the temperature of a semiconductor sample held by the sample stage. The heat receiving portions are separated from each other to release the restriction of the sample stage and a probe device such that the sample stage and the, probe device can be moved in a sample chamber.

Abstract translation: 用于检测缺陷的示例性装置能够通过温度控制装置来测量半导体样品的温度特性，而不受样品台和探针装置的移动范围的限制。 加热器加热样品台，并且通过连接到样品台的传热线，连接到传热线的第一热接收部分，由容纳在制冷剂容器中的制冷剂冷却样品台，第二受热部分， 可从热接收部分拆卸，连接到热接收部分的传热线和连接到传热线的传热杆，从而调节由样品台保持的半导体样品的温度。 热接收部彼此分离以释放样品台和探针装置的限制，使得样品台和探针装置可以在样品室中移动。

公开(公告)号：US20110073781A1

公开(公告)日：2011-03-31

申请号：US12894229

申请日：2010-09-30

Applicant: William H. Leavitt ,  Theodore H. Smick ,  Joseph Daniel Gillespie ,  William H. Park ,  Paul Eide ,  Drew Arnold ,  Geoffrey Ryding

Inventor： William H. Leavitt ,  Theodore H. Smick ,  Joseph Daniel Gillespie ,  William H. Park ,  Paul Eide ,  Drew Arnold ,  Geoffrey Ryding

IPC: H01L21/265

CPC classification number: H01J37/20 ,  H01J37/3171 ,  H01J2237/2001 ,  H01J2237/2007 ,  H01J2237/201

Abstract: An ion implanter has an implant wheel with a plurality of wafer carriers distributed about a periphery of the wheel. Each wafer carrier has a heat sink for removing heat from a wafer on the carrier during the implant process by thermal contact between the wafer and the heat sink. The wafer carriers have wafer retaining fences formed as cylindrical rollers with axes in the respective wafer support planes of the wafer carriers. The cylindrical surfaces of the rollers provide wafer abutment surfaces which can move transversely to the wafer support surfaces so that no transverse loading is applied by the fences to wafer edges as the wafer is pushed against the heat sink by centrifugal force. The wafer support surfaces comprise layers of elastomeric material and the movable abutment surfaces of the fences allow even thermal coupling with the heat sink over the whole area of the wafer.

Abstract translation: 离子注入机具有植入轮，其具有围绕轮的周边分布的多个晶片载体。 每个晶片载体具有散热器，用于在植入过程期间通过晶片和散热器之间的热接触从载体上的晶片去除热量。 晶片载体具有晶片保持栅栏，其形成为具有在晶片载体的相应晶片支撑平面中的轴线的圆柱形辊。 辊的圆柱形表面提供可以横向移动到晶片支撑表面的晶片邻接表面，使得当晶片通过离心力推靠在散热片上时，栅栏不会向晶片边缘施加横向负载。 晶片支撑表面包括弹性体材料层，并且栅栏的可移动邻接表面允许在晶片的整个区域上均匀地与散热器的热耦合。