公开(公告)号：US20140335281A1

公开(公告)日：2014-11-13

申请号：US14446705

申请日：2014-07-30

Applicant: Daiwa Techno Systems Co., Ltd.

Inventor： Takeshi SHIRATO ,  Yuuji HONDA ,  Hiroshi SATO ,  Masamichi OSAWA

IPC: C23C16/505

CPC classification number: C23C16/505 ,  C23C16/045 ,  C23C16/06 ,  C23C16/45591 ,  C23C16/4587 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32697 ,  H01J37/32899 ,  Y10T428/12361

Abstract: In a film-forming treatment jig for forming a thin film on a plate having a through hole of a micro diameter by a single plasma film-forming treatment, the film-forming treatment jig includes: a holding member 39 for holding the aperture plate in a state of exposing the through hole and the front and back surfaces of the aperture plate by clamping an aperture plate 107 having a through hole; and an electrode member having the holding member attached thereon, wherein the electrode member is electrically connected to an electrode to which the plasma electric power of a plasma CVD apparatus is applied.

Abstract translation: 在通过单次等离子体成膜处理在具有微细直径的通孔的板上形成薄膜的成膜处理夹具中，成膜处理夹具包括：保持构件39，用于将孔板保持在 通过夹持具有通孔的孔板107使孔板的通孔和前后表面露出的状态; 以及具有安装在其上的保持构件的电极构件，其中，所述电极构件电连接到施加等离子体CVD装置的等离子体电力的电极。

公开(公告)号：US20140311893A1

公开(公告)日：2014-10-23

申请号：US14185859

申请日：2014-02-20

Applicant: Intevac, Inc.

Inventor： Vinay Shah ,  Alexandru Riposan ,  Terry Bluck ,  Vladimir Kudriavtsev

IPC: C23C14/35 ,  H01J37/34

CPC classification number: C23C14/35 ,  C23C14/56 ,  H01J37/32669 ,  H01J37/32779 ,  H01J37/32899 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/3452 ,  H01J37/3455

Abstract: A sputtering system having a processing chamber with an inlet port and an outlet port, and a sputtering target positioned on a wall of the processing chamber. A movable magnet arrangement is positioned behind the sputtering target and reciprocally slides behind the target. A conveyor continuously transports substrates at a constant speed past the sputtering target, such that at any given time, several substrates face the target between the leading edge and the trailing edge. In certain embodiments, the movable magnet arrangement slides at a speed that is at least several times faster than the constant speed of the conveyor. A rotating zone is defined behind the leading edge and trailing edge of the target, wherein the magnet arrangement decelerates when it enters the rotating zone and accelerates as it reverses direction of sliding within the rotating zone. In certain embodiments, magnet power and/or speed varies as function of direction of magnet travel.

Abstract translation: 一种溅射系统，具有具有入口和出口的处理室和位于处理室的壁上的溅射靶。 可移动磁体布置位于溅射靶的后面并在目标之后往复滑动。 输送机以恒定速度连续输送基板通过溅射靶，使得在任何给定时间，几个基板在前缘和后缘之间面对目标。 在某些实施例中，可动磁体装置以比传送带的恒定速度快至少几倍的速度滑动。 旋转区域被限定在目标的前缘和后缘之后，其中磁体装置进入旋转区域时减速，并且当其在旋转区域内反转滑动方向时加速。 在某些实施例中，磁体功率和/或速度随着磁铁行进方向的变化而变化。

公开(公告)号：US20140138243A1

公开(公告)日：2014-05-22

申请号：US14083181

申请日：2013-11-18

Applicant: Stion Corporation

Inventor： Rajiv Pethe ,  Robert D. Wieting

IPC: H01L31/18

CPC classification number: H01J37/32779 ,  C23C14/185 ,  C23C14/564 ,  C23C14/568 ,  H01J37/32899 ,  H01J37/34 ,  H01L21/67173 ,  H01L21/6776 ,  H01L31/03923 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

Abstract: An in-line sputtering system includes a chamber and a sputtering target near a top region of the chamber. The system also includes a moving device located on a bottom region of the chamber configured to move a plurality of planar substrates loaded horizontally in a row with at least a gap distance between any neighboring substrates, The gap distance allows the bottom region to be subjected to a deposition from the sputtering target as the gap distance moves across the entire bottom region along with the plurality of planar substrates by the moving device, The system further includes a bottom shield disposed to cover entire bottom region except the moving device and configured to adhere the deposition through the gap distance from the sputtering target for preventing a deposition buildup.

Abstract translation: 在线溅射系统包括在室的顶部区域附近的室和溅射靶。 所述系统还包括位于所述室的底部区域上的移动装置，所述移动装置被配置为移动在水平方向上以任何相邻基底之间的间隙距离一行地排列的多个平面基板。间隙距离允许底部区域经受 当移动装置通过间隙距离与多个平面基板一起跨越整个底部区域时，来自溅射靶的沉积物。该系统还包括设置成覆盖移动装置之外的整个底部区域的底部屏蔽件， 通过与溅射靶的间隙距离沉积，以防止沉积积聚。

公开(公告)号：US20140076850A1

公开(公告)日：2014-03-20

申请号：US14091942

申请日：2013-11-27

Applicant: APPLIED MATERIALS, INC.

Inventor： JARED AHMAD LEE ,  MARTIN JEFFREY SALINAS ,  EZRA ROBERT GOLD ,  JAMES P. CRUSE

IPC: F17D3/03

CPC classification number: F17D3/03 ,  H01J37/3244 ,  H01J37/32899 ,  H01L21/02071 ,  H01L21/6719 ,  H01L21/67201 ,  Y10T137/0318 ,  Y10T137/877

Abstract: A method and apparatus for supplying a gas mixture to a load lock chamber is described. In one embodiment, the apparatus supplies a gas mixture to a pair of process chambers, comprising a first ozone generator to provide a first gas mixture to a first process chamber, a second ozone generator to provide a second gas mixture to a second process chamber, a first gas source coupled to the first ozone generator via a first mass flow controller and a first gas line, and coupled to the second ozone generator via a second mass flow controller and a second gas line, and a second gas source coupled to the first ozone generator via a third mass flow controller and a third gas line and coupled to the second ozone generator via fourth mass flow controller and a fourth gas line.

Abstract translation: 描述了一种将气体混合物供应到负载锁定室的方法和装置。 在一个实施例中，该装置将气体混合物提供给一对处理室，包括第一臭氧发生器以向第一处理室提供第一气体混合物，第二臭氧发生器将第二气体混合物提供给第二处理室， 第一气体源，经由第一质量流量控制器和第一气体管线耦合到第一臭氧发生器，并且经由第二质量流量控制器和第二气体管线耦合到第二臭氧发生器，以及耦合到第一气体源的第一气体源 臭氧发生器，经由第三质量流量控制器和第三气体管线，并经由第四质量流量控制器和第四气体管线与第二臭氧发生器连接。

公开(公告)号：US08617411B2

公开(公告)日：2013-12-31

申请号：US13187437

申请日：2011-07-20

Applicant: Harmeet Singh

Inventor： Harmeet Singh

IPC: H01L21/306

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32458 ,  H01J37/32633 ,  H01J37/32715 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/76814

Abstract: Substrate processing systems and methods for etching an atomic layer are disclosed. The methods and systems are configured to introducing a first gas into the chamber, the gas being an etchant gas suitable for etching the layer and allowing the first gas to be present in the chamber for a period of time sufficient to cause adsorption of at least some of the first gas into the layer. The first gas is substantially replaced in the chamber with an inert gas, and metastables are then generated from the inert gas to etch the layer with the metastables while substantially preventing the plasma charged species from etching the layer.

Abstract translation: 公开了用于蚀刻原子层的衬底处理系统和方法。 所述方法和系统被配置为将第一气体引入所述室中，所述气体是适于蚀刻所述层的蚀刻剂气体，并允许所述第一气体在所述室中存在足以引起至少一些吸附的时间 的第一个气体进入层。 第一种气体在室内基本上被惰性气体替代，然后从惰性气体产生亚稳态，以便在亚稳态下蚀刻该层，同时基本上防止等离子体带电物质蚀刻该层。

公开(公告)号：US20130196080A1

公开(公告)日：2013-08-01

申请号：US13751282

申请日：2013-01-28

Applicant: ASM IP Holding B.V.

Inventor： Hyun-Kyu CHO

IPC: C23C16/52

CPC classification number: C23C16/513 ,  C23C16/45536 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32899

Abstract: A deposition apparatus according to an exemplary embodiment of the present invention includes a plurality of reactors; a plurality of gas supply units connected to the plurality of reactors; and a plurality of plasma supply units connected to the plurality of reactors. Each of the plasma supply units includes: a plasma power supplier; a plurality of diodes connected to the plasma power supplier; and a reverse voltage driver connected to the plurality of diodes through respectively corresponding switches.

Abstract translation: 根据本发明的示例性实施例的沉积设备包括多个反应器; 连接到所述多个反应器的多个气体供给单元; 以及与多个反应器连接的多个等离子体供给单元。 每个等离子体供应单元包括：等离子体供电器; 连接到等离子体电源的多个二极管; 以及通过分别对应的开关连接到所述多个二极管的反向电压驱动器。

公开(公告)号：US20130192759A1

公开(公告)日：2013-08-01

申请号：US13813602

申请日：2011-08-02

Applicant: Yuichi Setsuhara ,  Akinori Ebe

Inventor： Yuichi Setsuhara ,  Akinori Ebe

IPC: H01L21/02 ,  H01L21/465

CPC classification number: H01L21/02104 ,  C23C16/24 ,  C23C16/509 ,  H01J37/3211 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32568 ,  H01J37/32623 ,  H01J37/32834 ,  H01J37/32899 ,  H01J37/32954 ,  H01L21/465 ,  H05H1/46 ,  H05H2001/4667

Abstract: A plasma processing device according to the present invention includes a plasma processing chamber, a plasma producing chamber communicating with the plasma processing chamber, a radio-frequency antenna for producing plasma, a plasma control plate for controlling the energy of electrons in the plasma, as well as an operation rod and a moving mechanism for regulating the position of the plasma control plate. In this plasma processing device, the energy distribution of the electrons of the plasma produced in the plasma producing chamber can be controlled by regulating the distance between the radio-frequency antenna 16 and the plasma control plate by simply moving the operation rod in its longitudinal direction by the moving mechanism. Therefore, a plasma process suitable for the kind of gas molecules to be dissociated and/or their dissociation energy can be easily performed.

Abstract translation: 根据本发明的等离子体处理装置包括等离子体处理室，与等离子体处理室连通的等离子体产生室，用于产生等离子体的射频天线，用于控制等离子体中的电子能量的等离子体控制板，如 以及用于调节等离子体控制板的位置的操作杆和移动机构。 在该等离子体处理装置中，等离子体生成室中产生的等离子体的电子的能量分布可以通过简单地使操作杆沿其纵向移动来调节射频天线16和等离子体控制板之间的距离来控制 通过移动机制。 因此，可以容易地进行适合于要离解的气体分子种类和/或其解离能的等离子体工艺。

公开(公告)号：US20130008605A1

公开(公告)日：2013-01-10

申请号：US13620654

申请日：2012-09-14

Applicant: Gerald Yin ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

Inventor： Gerald Yin ,  Tuqiang Ni ,  Jinyuan Chen ,  Xueyu Qian

IPC: H01L21/3065

CPC classification number: H01J37/32165 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/32889 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/6719

Abstract: A tandem processing-zones chamber having plasma isolation and frequency isolation is provided. At least two RF frequencies are fed from the cathode for each processing zones, where one frequency is about ten times higher than the other, so as to provide decoupled reactive ion etch capability. The chamber body is ground all around and in-between the two processing zones. The use of frequency isolation enables feed of multiple RF frequencies from the cathode, without having crosstalk and beat. A plasma confinement ring is also used to prevent plasma crosstalk. A grounded common evacuation path is connected to a single vacuum pump.

Abstract translation: 提供了具有等离子体隔离和频率隔离的串联处理区室。 对于每个处理区域，至少两个RF频率从阴极馈送，其中一个频率比另一个频率高约十倍，以便提供去耦反应离子蚀刻能力。 室体在两个处理区之间周围和两者之间被磨碎。 使用频率隔离可以从阴极馈送多个RF频率，而不会产生串扰和拍频。 等离子体约束环也用于防止等离子体串扰。 接地的公共排气路径连接到单个真空泵。

公开(公告)号：US08282983B1

公开(公告)日：2012-10-09

申请号：US12241758

申请日：2008-09-30

Applicant: Sunil Kapoor ,  Edward Augustyniak

Inventor： Sunil Kapoor ,  Edward Augustyniak

IPC: C23C16/52

CPC classification number: H01J37/32174 ,  H01J37/32899

Abstract: Apparatus and methods to minimize wafer-to-wafer process variation in RF-based semiconductor processing reactors with shared RF source for multiple processing areas. RF sensors associated with each processing area sends signal to the RF balance controller. The controller modifies station impedance using power adjustment mechanisms. As a result, station to station distribution of a selected RF parameter (e.g., load power) may match the station set points. Closed loop control maintains balance despite changing conditions.

Abstract translation: 在具有用于多个处理区域的共享RF源的基于RF的半导体处理反应器中最小化晶片到晶片工艺变化的装置和方法。 与每个处理区域相关联的RF传感器向RF平衡控制器发送信号。 控制器使用功率调节机构修改电台阻抗。 因此，所选择的RF参数（例如，负载功率）的站到站分配可以匹配站设定点。 尽管条件变化，闭环控制保持平衡。

公开(公告)号：US20120251705A1

公开(公告)日：2012-10-04

申请号：US13435673

申请日：2012-03-30

Applicant: Tatsuo MATSUDO

Inventor： Tatsuo MATSUDO

IPC: C23C16/52 ,  C23C16/448

CPC classification number: H01J37/32899 ,  G05D23/192 ,  H01J37/32422 ,  H01J37/32706 ,  H01J37/32724 ,  H01J37/3299

Abstract: In order to control a temperature of a wafer with high accuracy, there is provided a temperature controlling method including retrieving a result of measuring a kind of a film formed on a rear surface of the wafer; selecting a temperature of the wafer corresponding to an electric power supplied to process the wafer and the kind of the film formed on the rear surface of the wafer, which is the measurement result, from a first database, in which the electric power supplied to a chamber, the kind of the film formed on the rear surface of the wafer, and the temperature of the wafer are stored to be linked to one another; and adjusting the temperature of the wafer based on the selected temperature of the wafer.

Abstract translation: 为了高精度地控制晶片的温度，提供了一种温度控制方法，其包括检测形成在晶片的后表面上的膜的种类的结果; 从作为测量结果的形成在晶片的后表面上的膜的种类，从提供给晶片的电力提供的晶片的温度与供给晶片的电力相对应的晶片的温度从第一数据库中选择， 形成在晶片的后表面上的膜的种类和晶片的温度被彼此连接; 以及基于晶片的选定温度来调节晶片的温度。