Abstract:
In a wiring substrate having a metal wiring pattern that is formed on a substrate and includes a contact portion for providing connection to an external element, an organic thin film containing silane is formed to cover the metal wiring pattern and the contact portion is electrically connected to the external element through the organic thing film. Unlike conventional wiring substrates in which a contact portion is uncovered by ripping open or cutting away a protective resin film formed on the contact portion, the wiring substrate can be electrically connected with an external element having a low contact pressure, for example.
Abstract:
A method is disclosed for fabricating a patterned embedded capacitance layer. The method includes fabricating (1305, 1310) a ceramic oxide layer (510) overlying a conductive metal layer (515) overlying a printed circuit substrate (505), perforating (1320) the ceramic oxide layer within a region (705), and removing (1325) the ceramic oxide layer and the conductive metal layer in the region by chemical etching of the conductive metal layer. The ceramic oxide layer may be less than 1 micron thick.
Abstract:
Electrode layers (1, 2) are arranged on both sides of a dielectric layer (3) facing each other so as to configure a capacitor. Lead electrodes (4, 5) are formed in the electrode layers (1, 2). A penetrating electrode (6) that is insulated from the electrode layers (1, 2) is formed. An electronic component (10) configured in this manner is mounted on a wiring board, and a semiconductor chip can be mounted thereon. Along with connecting the semiconductor chip to the wiring board via the penetrating electrode (6), the semiconductor chip or the wiring board is connected to the lead electrodes (4, 5). In this manner, while suppressing the size increase of a mounted area, the capacitor or the like can be arranged near the semiconductor chip. Thus, the semiconductor chip is driven with high frequency more easily.
Abstract:
To provide a dielectric-layer-provided copper foil or the like for extremely improving the product yield while making the most use of the increase effect of an electric capacity of a thin dielectric layer using the sputtering vapor deposition method. In the case of dielectric-layer-provided copper foils respectively having a dielectric layer on one side of a copper foil, the dielectric layer 6 is an inorganic-oxide sputter film having a thickness of 1.0 μm or less and formed on the one side of the copper foil in accordance with the sputtering vapor deposition method and the dielectric-layer-provided copper foils for respectively forming a capacitor layer, characterized in that a pit-like defective portion generated on the inorganic-oxide sputter film is sealed by polyimide resin are used.
Abstract:
A system and method for the fabrication of high reliability capacitors (1011), inductors (1012), and multi-layer interconnects (1013) (including resistors (1014)) on various thin film hybrid substrate surfaces (0501) is disclosed. The disclosed method first employs a thin metal layer (0502) deposited and patterned on the substrate (0501). This thin patterned layer (0502) is used to provide both lower electrodes for capacitor structures (0603) and interconnects (0604) between upper electrode components. Next, a dielectric layer (0705) is deposited over the thin patterned layer (0502) and the dielectric layer (0705) is patterned to open contact holes (0806) to the thin patterned layer. The upper electrode layers (0907, 0908, 1009, 1010) are then deposited and patterned on top of the dielectric (0705).
Abstract:
According to a flexible thin film capacitor of the present invention, an adhesive film is formed on a substrate composed of at least one selected from the group consisting of an organic polymer and a metal foil, and an inorganic high dielectric film and metal electrode films are formed thereon. A metal oxide adhesive film can be used as the adhesive film. The adhesive film is formed in contact with the inorganic high dielectric film and at least one of the metal electrode films.
Abstract:
A multilayer printed board comprising a plurality of capacitive coupling layers (6) each consisting of a dielectric layer (4) and a power supply layer (3) and a ground layer (5) facing each other while sandwiching the dielectric layer (4), first vias (7) connecting between the power supply layers (3) included in the plurality of capacitive coupling layers (6), and second vias (8) connecting between the ground layers (5) included in the plurality of capacitive coupling layers (6).
Abstract:
The invention relates to a thin film capacitor containing (a) a substrate, (b) a first polymeric film comprising an electrically conductive polymer located on the substrate, (c) a pentoxide layer selected from the group consisting of tantalum pentoxide, or niobium pentoxide, and mixtures thereof, (d) a second polymeric film comprising an electrically conductive polymer located on the pentoxide layer.
Abstract:
A capacitor capable of being incorporated into a packaging substrate, characterized in that the capacitor comprises a high-dielectric-constant layer, and an upper electrode layer and a lower electrode layer sandwiching the high-dielectric-constant layer from the upper side and the lower side. A packaging substrate containing the capacitor, and a method for producing the same are also provided.
Abstract:
An assembly includes a suspension, a magnetic head assembly, first and second write wires and first and second read wires wherein the magnetic head assembly includes a write head and a read head with the first and second write wires connected to the write head and the first and second read wires connected to the read head and wherein the first and second insulative sheaths are disposed about the first and second read wires and first and second conductive sheaths are disposed about the first and second insulative sheaths. In another aspect of the invention, third and fourth insulative sheaths are disposed about the first and second write wires and third and fourth conductive sheaths are disposed about the third and fourth insulative sheaths.