公开(公告)号：US10942344B2

公开(公告)日：2021-03-09

申请号：US16462628

申请日：2017-12-18

Applicant: OSRAM OLED GmbH

Inventor： Ulrich Streppel ,  Désirée Queren

IPC: F21V7/04 ,  G02B19/00 ,  G02B3/08 ,  G02B27/09 ,  H01L33/58 ,  G01S7/481

Abstract: An optoelectronic component includes a light emitter including a multiplicity of image points configured to emit light, and an optical element configured to guide light emitted by the light emitter into a target region, wherein a lower side facing toward the light emitter of the optical element is subdivided into four quadrants, each quadrant includes a Fresnel structure having a multiplicity of ridges extending along concentric annular arcs, the ridges of the Fresnel structure in each quadrant are respectively curved around a center shifted relative to a midpoint of the lower side of the optical element, and the center in each quadrant is arranged at a corner of the lower side of the optical element.

公开(公告)号：US20210057884A1

公开(公告)日：2021-02-25

申请号：US16982425

申请日：2019-03-13

Applicant: OSRAM OLED GmbH

Inventor： Jan Marfeld ,  André Somers ,  Andreas Löffler ,  Sven Gerhard

IPC: H01S5/22 ,  H01S5/026 ,  H01S5/042 ,  H01S5/022 ,  H01S5/024 ,  H01S5/323

Abstract: In an embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) in which an active zone (22) for generating laser radiation (L) is located. Several electrical contact surfaces (5) serve for external electrical contacting of the semiconductor layer sequence (2). Several parallel ridge waveguides (3) are formed from the semiconductor layer sequence (2) and configured to guide the laser radiation (L) along a resonator axis, so that there is a separating trench (6) between adjacent ridge waveguides. At least one electrical feed (4) serves from at least one of the electrical contact surfaces (5) to guide the current to at least one of the ridge waveguides (3). A distance (A4) between the ridge waveguides is at most 50 μm. The ridge waveguides (3) are electrically controllable individually or in groups independently of one another and/or configured for single-mode operation.

公开(公告)号：US20210050484A1

公开(公告)日：2021-02-18

申请号：US16963482

申请日：2019-01-24

Applicant: OSRAM OLED GmbH

Inventor： Brendan Holland ,  Markus Bröll

IPC: H01L33/46 ,  H01L31/0216 ,  H01L31/0232

Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment an optoelectronic semiconductor component includes a semiconductor layer sequence having a first region of a first conductivity type, a reflection layer, a passivation layer arranged between the semiconductor layer sequence and the reflection layer, a first barrier layer arranged between the first region of the semiconductor layer sequence and the passivation layer and a second barrier layer arranged between the passivation layer and the reflection layer, wherein the first barrier layer is configured to reduce or prevent diffusion of contaminants from the passivation layer into the semiconductor layer sequence, and wherein the second barrier layer is configured to reduce or prevent diffusion of contaminants from the passivation layer into the reflection layer.

公开(公告)号：US20210036200A1

公开(公告)日：2021-02-04

申请号：US16964533

申请日：2019-01-24

Applicant: OSRAM OLED GmbH

Inventor： Simeon Katz ,  Markus Maute

IPC: H01L33/62 ,  H01L31/18 ,  H01L31/02 ,  H01L23/00 ,  H01L33/44 ,  H01L31/0216

Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment an optoelectronic semiconductor component includes a semiconductor body with a contact metallization located at a main surface of the semiconductor body, a protective layer partially covering the semiconductor body and the contact metallization, a substrate firmly bonded to the semiconductor body at the main surface, a recess and a terminal layer arranged within the recess, wherein the recess and the terminal layer extend from a side of the substrate facing away from the semiconductor body through the substrate and the protective layer up to the contact metallization, and wherein the terminal layer electrically contacts the contact metallization and a connection layer located between the substrate and the semiconductor body, the connection layer including a first region and a second region, wherein the first region is bonded together with the second region without using a bonding agent.

公开(公告)号：US20210007604A1

公开(公告)日：2021-01-14

申请号：US16980150

申请日：2019-03-12

Applicant: OSRAM OLED GmbH

Inventor： Faina Esser ,  Claus Jaeger ,  Stephan Haslbeck

IPC: A61B5/00 ,  A63B24/00

Abstract: In an embodiment a sensor device includes a housing having at least a first cavity and a second cavity, at least one light emitter arranged in the first cavity and at least one light detector arranged in the second cavity, wherein each of the cavities has an opening at an underside of the housing so that light from the respective cavity is passable to the outside and/or from the outside into the respective cavity, wherein each of the cavities includes a bottom opposite the underside of the housing and a peripheral side wall extending between the bottom and the underside of the housing, wherein at least one of the cavities is filled with an absorbing material from the bottom to a specified height, and with a transparent material from the specified height to a height of the underside of the housing, and wherein the light detector is arranged on the bottom of the second cavity.

公开(公告)号：US20210005789A1

公开(公告)日：2021-01-07

申请号：US16969748

申请日：2019-02-05

Applicant: OSRAM OLED GmbH

Inventor： Luca HAIBERGER ,  Sam CHOU

IPC: H01L33/48 ,  H01L33/60

Abstract: A radiation-emitting component (1) is specified with a carrier (2) having a cavity (9), a radiation-emitting semiconductor chip (3) which is arranged on a bottom surface delimiting the cavity (9) and which is configured to generate primary electromagnetic radiation, and a first reflector layer (6) arranged above a top surface of the semiconductor chip (3), wherein the carrier (2) is transparent in places to the primary electromagnetic radiation, and the semiconductor chip (3) is spaced apart from at least one side surface delimiting the cavity (9).

公开(公告)号：US10833234B2

公开(公告)日：2020-11-10

申请号：US16480966

申请日：2018-03-05

Applicant: OSRAM OLED GmbH

Inventor： Christopher Wiesmann

IPC: H01L33/60 ,  H01L33/20 ,  H01L33/48 ,  H01L33/58 ,  H01L33/46

Abstract: An optoelectronic semiconductor component includes a semiconductor layer sequence that generates radiation, the semiconductor layer sequence has an emission side and a rear side opposite said emission side, a mirror for the generated radiation on the rear side, a carrier that is transmissive to the radiation generated, on the emission side, and a reflector housing on side surfaces of the carrier, the reflector housing is impermeable to the generated radiation and configured for diffuse reflection of generated radiation and includes a radiation exit opening, wherein at least one of a width of an opening in the reflector housing and an area of the radiation exit opening decrease(s) in a direction away from the emission side, and a maximum emission of the generated radiation takes place in an emission angle range of 30° to 60°, relative to a perpendicular to the emission side.

公开(公告)号：US10833231B2

公开(公告)日：2020-11-10

申请号：US16094870

申请日：2017-04-13

Applicant: OSRAM OLED GMBH

Inventor： Gertrud Kräuter ,  Matthias Loster ,  Kathy Schmidtke ,  Alan Piquette

IPC: H01L33/56 ,  C08G77/18 ,  C08J3/24 ,  C08K3/22 ,  C08K3/28 ,  C09D183/06 ,  C09K11/02 ,  C09K11/08 ,  H01L33/50

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment a method for producing an optoelectronic component includes providing a semiconductor capable of emitting primary radiation, providing an alkoxy-functionalized polyorganosiloxane resin and crosslinking the alkoxy-functionalized polyorganosiloxane resin to form a three-dimensionally crosslinked polyorganosiloxane, wherein an organic portion of the three-dimensionally crosslinked polyorganosiloxane is up to 25 wt %.

公开(公告)号：US20200343419A1

公开(公告)日：2020-10-29

申请号：US16762056

申请日：2019-01-24

Applicant: OSRAM OLED GmbH

Inventor： Britta Göötz ,  Matthias Hien ,  Andreas Dobner ,  Peter Brick ,  Matthias Goldbach ,  Uli Hiller ,  Sebastian Stigler

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/60

Abstract: An optoelectronic semiconductor chip, a method for manufacturing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence having an emission side, the emission side comprising a plurality of emission fields, partition walls on the emission side in a region between two adjacent emission fields and a conversion element on one or more emission fields, wherein the conversion element includes a matrix material with first phosphor particles incorporated therein, wherein the first phosphor particles are sedimented in the matrix material such that a mass fraction of the first phosphor particles is greater in a lower region of the conversion element facing the semiconductor layer sequence than in a remaining region of the conversion element, and wherein the partition walls are attached to the emission side without any additional connectors.

公开(公告)号：US20200335658A1

公开(公告)日：2020-10-22

申请号：US16955560

申请日：2019-01-17

Applicant: OSRAM OLED GmbH

Inventor： Philipp Drechsel ,  Werner Bergbauer ,  Thomas Lehnhardt ,  Jürgen Off ,  Joachim Hertkorn

IPC: H01L33/00 ,  H01L33/12

Abstract: A method for producing a nitride compound semiconductor component is disclosed. In an embodiment the method includes providing a growth substrate, growing a nucleation layer of an aluminum-containing nitride compound semiconductor onto the growth substrate, growing a tension layer structure for generating a compressive stress, wherein the tension layer structure comprises at least a first GaN semiconductor layer and a second GaN semiconductor layer, and wherein an Al(Ga)N interlayer for generating the compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer and growing a functional semiconductor layer sequence of the nitride compound semiconductor component onto the tension layer structure, wherein a growth of the second GaN semiconductor layer is preceded by a growth of a first 3D AlGaN layer on the Al(Ga)N interlayer in such a way that it has nonplanar structures.