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    Process and System for Fabrication of Patterns on a Surface
    73.
    发明申请
    Process and System for Fabrication of Patterns on a Surface 有权
    制作表面图案的工艺和系统

    公开(公告)号：US20110189446A1

    公开(公告)日：2011-08-04

    申请号：US13003484

    申请日：2009-07-03

    Applicant: Graham L. W. Cross ,  Warren McKenzie ,  John B. Pethica

    Inventor： Graham L. W. Cross ,  Warren McKenzie ,  John B. Pethica

    IPC: B32B3/00 ,  C23F1/00 ,  C23F1/08 ,  B82Y30/00 ,  B82Y40/00 ,  B82Y5/00

    CPC classification number: G03F7/11 ,  B81C1/00634 ,  B81C2201/0143 ,  B81C2201/0159 ,  B81C2201/036 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/0337

    Abstract: The invention provides a system and process of patterning structures on a carbon based surface comprising exposing part of the surface to an ion flux, such that material properties of the exposed surface are modified to provide a hard mask effect on the surface. A further step of etching unexposed parts of the surface forms the structures on the surface. The inventors have discovered that by controlling the ion exposure, alteration of the surface structure at the top surface provides a mask pattern, without substantially removing any material from the exposed surface. The mask allows for subsequent ion etching of unexposed areas of the surface leaving the exposed areas raised relative to the unexposed areas thus manufacturing patterns onto the surface. For example, a Ga+ focussed ion beam exposes a pattern onto a diamond surface which produces such a pattern after its exposure to a plasma etch. The invention is particularly suitable for patterning of clear well-defined structures down to nano-scale dimensions.

    Abstract translation: 本发明提供了一种在碳基表面上构图结构的系统和工艺，包括将表面的一部分暴露于离子通量，使得暴露表面的材料特性被修饰以在表面上提供硬掩模效应。 蚀刻表面的未曝光部分的另一步骤形成表面上的结构。 发明人已经发现，通过控制离子暴露，顶表面上的表面结构的改变提供掩模图案，而基本上不从暴露表面移除任何材料。 该掩模允许对表面的未曝光区域的后续离子蚀刻，离开暴露区域相对于未曝光区域升高，从而将图案制造到表面上。 例如，Ga +聚焦离子束将图案暴露在金刚石表面上，其在暴露于等离子体蚀刻之后产生这种图案。 本发明特别适用于直到纳米级尺寸的清晰明确定义的结构的图案化。

    Decal transfer lithography
    77.
    发明授权
    Decal transfer lithography 有权
    贴片转印光刻

    公开(公告)号：US07662545B2

    公开(公告)日：2010-02-16

    申请号：US10965279

    申请日：2004-10-14

    Applicant: Ralph G. Nuzzo ,  William R. Childs ,  Michael J. Motala ,  Keon Jae Lee

    Inventor： Ralph G. Nuzzo ,  William R. Childs ,  Michael J. Motala ,  Keon Jae Lee

    IPC: G03F7/00

    CPC classification number: G03F7/0002 ,  B81C1/0038 ,  B81C2201/0159 ,  B81C2201/0191 ,  B81C2203/038 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/34 ,  G03F7/346

    Abstract: A method of making a microstructure includes selectively activating a portion of a surface of a silicon-containing elastomer, contacting the activated portion with a substance, and bonding the activated portion and the substance, such that the activated portion of the surface and the substance in contact with the activated portion are irreversibly attached. The selective activation may be accomplished by positioning a mask on the surface of the silicon-containing elastomer, and irradiating the exposed portion with UV radiation.

    Abstract translation: 制造微结构的方法包括选择性地激活含硅弹性体的表面的一部分，使活化部分与物质接触，并且将活化部分和物质接合，使得表面的活化部分和物质在 与活化部分的接触不可逆地附着。 选择性激活可以通过将掩模定位在含硅弹性体的表面上，并用UV辐射照射暴露部分来实现。

    PHOTOCHEMICAL METHOD FOR MANUFACTURING NANOMETRICALLY SURFACE-DECORATED SUBSTRATES
    78.
    发明申请
    PHOTOCHEMICAL METHOD FOR MANUFACTURING NANOMETRICALLY SURFACE-DECORATED SUBSTRATES 失效
    制备纳米表面装饰基板的光电化学方法

    公开(公告)号：US20090308842A1

    公开(公告)日：2009-12-17

    申请号：US11510276

    申请日：2006-08-24

    Applicant: Petra Mela ,  Marcell Ott ,  Joachim Spatz ,  Blazej Gorzolnik ,  Martin Moller

    Inventor： Petra Mela ,  Marcell Ott ,  Joachim Spatz ,  Blazej Gorzolnik ,  Martin Moller

    IPC: B44C1/22

    CPC classification number: B81C1/00206 ,  B81C2201/0159 ,  B82Y30/00 ,  G03F7/0047 ,  G03F7/033 ,  G03F7/038 ,  G03F7/0384 ,  G03F7/0751 ,  G03F7/165

    Abstract: The present invention relates to a photochemical method for manufacturing nanometrically surface-decorated substrates, i.e. the creation of periodic and aperiodic patterns of highly ordered inorganic nanostructures on a substrate. This method is based on the selective photochemical modification of a self-assembled monolayer of metal compound loaded polymer core-shell systems on widely variable substrates. Light exposure through an appropriate mask causes selective chemical modification of the polymer core shell system. By subsequently placing the substrate in an appropriate chemical solution that eradicates the non-modified polymer, the pattern given by the used mask is reproduced on the surface. Finally, the remaining organic matrix is removed and metal salt is transformed to the single metal or metal oxide nanodots by means of gas plasma treatment.

    Abstract translation: 本发明涉及一种用于制造纳米表面装饰的衬底的光化学方法，即在衬底上产生高度有序的无机纳米结构的周期性和非周期性图案。 该方法基于在广泛变化的基底上的金属化合物负载的聚合物核 - 壳体系的自组装单层的选择性光化学修饰。 通过适当的掩模的曝光导致聚合物核壳体系统的选择性化学改性。 通过随后将衬底放置在消除未改性聚合物的合适的化学溶液中，使用的掩模给出的图案在表面上再现。 最后，除去剩余的有机基质，通过气体等离子体处理将金属盐转变成单一金属或金属氧化物纳米点。

    DIRECT INCIDENT BEAM LITHOGRAPHY FOR PATTERNING NANOPARTICLES, AND THE ARTICLES FORMED THEREBY
    79.
    发明申请
    DIRECT INCIDENT BEAM LITHOGRAPHY FOR PATTERNING NANOPARTICLES, AND THE ARTICLES FORMED THEREBY 失效
    用于绘制纳米粒子的直接事件光束图和形成的文章

    公开(公告)号：US20090047485A1

    公开(公告)日：2009-02-19

    申请号：US12193437

    申请日：2008-08-18

    Applicant: Yuval Ofir ,  Vincent Martin Rotello ,  Mark Thomas Tuominen ,  Qijun Xiao ,  Bappaditya Samanta

    Inventor： Yuval Ofir ,  Vincent Martin Rotello ,  Mark Thomas Tuominen ,  Qijun Xiao ,  Bappaditya Samanta

    IPC: B32B5/02 ,  G03F7/00

    CPC classification number: G03F7/0042 ,  B33Y10/00 ,  B33Y70/00 ,  B81C1/00031 ,  B81C1/00126 ,  B81C2201/0159 ,  G03F7/0043 ,  G03F7/0047 ,  G03F7/2059 ,  Y10T428/24893

    Abstract: Disclosed herein is a method for generating a three-dimensional structure on a surface. The method comprises forming a layer comprising a plurality of nanoparticles on a surface; and exposing a portion of the layer to incident radiation having a defined pattern at a dosage effective to aggregate the nanoparticles in the exposed portion of the layer into a three-dimensional structure, wherein the three-dimensional structure has a shape defined by the pattern of the radiation and a height defined by the dosage of the incident radiation and a thickness of the nanoparticle layer. Alternatively, the method comprises forming a layer comprising a plurality of nanoparticles on a surface of a three-dimensional template; and exposing at least a portion of the layer to incident radiation at a dosage effective to aggregate the nanoparticles in the exposed portion of the layer into a three-dimensional structure that corresponds to the three-dimensional template.

    Abstract translation: 本文公开了一种用于在表面上产生三维结构的方法。 该方法包括在表面上形成包含多个纳米颗粒的层; 以及将所述层的一部分暴露于具有限定图案的入射辐射，其剂量有效地将所述层的暴露部分中的纳米颗粒聚集成三维结构，其中所述三维结构具有由 辐射和由入射辐射的剂量和纳米颗粒层的厚度限定的高度。 或者，该方法包括在三维模板的表面上形成包含多个纳米颗粒的层; 以及将所述层的至少一部分以有效将所述层的暴露部分中的纳米颗粒聚集成对应于所述三维模板的三维结构的剂量暴露于入射辐射。

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