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    METHOD OF FABRICATING NANO-SCALE STRUCTURES AND NANO-SCALE STRUCTURES FABRICATED USING THE METHOD
    71.
    发明申请
    METHOD OF FABRICATING NANO-SCALE STRUCTURES AND NANO-SCALE STRUCTURES FABRICATED USING THE METHOD 审中-公开
    使用该方法制作纳米尺度结构和纳米尺度结构的方法

    公开(公告)号：US20160068384A1

    公开(公告)日：2016-03-10

    申请号：US14785338

    申请日：2014-04-09

    Applicant: Bo CUI ,  Ripon Kumar DEY

    Inventor： Bo CUI ,  Ripon Kumar DEY

    IPC: B81C1/00 ,  B81B1/00

    CPC classification number: B81C1/00111 ,  B81B1/008 ,  B81B2201/12 ,  B81B2203/0361 ,  B81C2201/0132 ,  B81C2201/053 ,  B82Y30/00 ,  B82Y40/00 ,  G01Q70/12 ,  H01L21/3065 ,  H01L21/31144 ,  H01L21/32134 ,  H01L21/32139

    Abstract: The invention provides a fabrication method of batch producing nano-scale structures, such as arrays of silicon pillars of high aspect ratio. The invention also relates to providing arrays of high aspect ratio silicon pillars fabricated using the improved fabrication method. The array of silicon pillars is fabricated from arrays of low aspect ratio pyramid-shaped structures. Mask formed from a hard material, such as a metal mask, is formed on top of each of the pyramid-shaped structures in a batch process. The pyramid-shaped structures are subsequently etched to remove substrate materials not protected by the hard masks, so that a high aspect ratio pillar or shaft is formed on the pyramid-shaped low aspect ratio base, resulting in an array of high aspect ratio silicon pillars.

    Abstract translation: 本发明提供了批量生产纳米级结构的制造方法，例如高纵横比的硅柱阵列。 本发明还涉及使用改进的制造方法制造的高纵横比硅柱阵列。 硅柱阵列由低纵横比金字塔形结构的阵列制成。 由金属掩模等硬质材料形成的掩模在分批处理中形成在每个金字塔形结构的顶部上。 金字塔形结构随后被蚀刻以除去未被硬掩模保护的衬底材料，从而在金字塔形的低纵横比基底上形成高纵横比的柱或轴，导致高纵横比硅柱的阵列 。

    Method for manufacturing a MEMS sensor
    74.
    发明授权
    Method for manufacturing a MEMS sensor 有权
    MEMS传感器的制造方法

    公开(公告)号：US08975090B2

    公开(公告)日：2015-03-10

    申请号：US14331182

    申请日：2014-07-14

    Applicant: Rohm Co., Ltd.

    Inventor： Goro Nakatani ,  Toma Fujita

    IPC: H01L21/02 ,  B81C1/00

    CPC classification number: B81C1/00801 ,  B81B7/02 ,  B81B2201/0242 ,  B81B2203/0136 ,  B81B2203/04 ,  B81C1/00182 ,  B81C2201/053 ,  G01C19/5733 ,  G01C19/5769 ,  G01P15/125 ,  H01L2224/48137

    Abstract: A capacitance type gyro sensor includes a semiconductor substrate, a first electrode integrally including a first base portion and first comb tooth portions and a second electrode integrally including a second base portion and second comb tooth portions, formed by processing the surface portion of the semiconductor substrate. The first electrode has first drive portions that extend from opposed portions opposed to the respective second comb tooth portions on the first base portion toward the respective second comb tooth portions. The second electrode has second drive portions formed on the tip end portions of the respective second comb tooth portions opposed to the respective first drive portions. The first drive portions and the second drive portions engage with each other at an interval like comb teeth.

    Abstract translation: 电容式陀螺传感器包括半导体基板，一体地包括第一基座部分和第一梳齿部分的第一电极和通过处理半导体基板的表面部分而形成的包括第二基底部分和第二梳齿部分的第二电极 。 第一电极具有第一驱动部分，其从在第一基部上的相应的第二梳齿部分相对的部分朝向相应的第二梳齿部分延伸。 第二电极具有形成在与第一驱动部分相对的各个第二梳齿部分的末端部分上的第二驱动部分。 第一驱动部分和第二驱动部分以梳齿的间隔彼此接合。

    Electronic device, electronic apparatus, and method of manufacturing electronic device
    75.
    发明授权
    Electronic device, electronic apparatus, and method of manufacturing electronic device 有权
    电子设备，电子设备和制造电子设备的方法

    公开(公告)号：US08912031B2

    公开(公告)日：2014-12-16

    申请号：US13306493

    申请日：2011-11-29

    Applicant: Yoko Kanemoto ,  Ryuji Kihara

    Inventor： Yoko Kanemoto ,  Ryuji Kihara

    IPC: H01L21/00 ,  B81C1/00

    CPC classification number: B81C1/00801 ,  B81B2201/0271 ,  B81B2207/07 ,  B81C2201/053 ,  Y10T29/49165

    Abstract: An electronic device includes: a vibrator disposed within a cavity on a substrate and electrically driven; an enclosure wall which has electric conductivity and sections the cavity from an insulation layer surrounding the circumference of the cavity; a first wiring and a second wiring which connect with the vibrator and penetrate the enclosure wall; and a liquid flow preventing portion disposed at the position where the first wiring and the second wiring penetrate the enclosure wall to prevent flow of etchant dissolving the insulation layer from the cavity toward the insulation layer and insulate the first wiring and the second wiring from the enclosure wall.

    Abstract translation: 电子设备包括：振动器，设置在基板上的空腔内并电驱动; 封闭壁，其具有导电性，并且将空腔从围绕空腔圆周的绝缘层分开; 与振动器连接并穿透封闭壁的第一布线和第二布线; 以及设置在所述第一布线和所述第二布线穿过所述封闭壁的位置处的液体流动防止部，以防止将所述绝缘层从所述空腔朝向所述绝缘层溶解的蚀刻剂流动，并且将所述第一布线和所述第二布线与所述封装 壁。

    SYSTEM AND METHOD FOR MINIMIZING DEFLECTION OF A MEMBRANCE OF AN ABSOLUTE PRESSURE SENSOR
    78.
    发明申请
    SYSTEM AND METHOD FOR MINIMIZING DEFLECTION OF A MEMBRANCE OF AN ABSOLUTE PRESSURE SENSOR 审中-公开
    用于最小化绝对压力传感器的膜的偏移的系统和方法

    公开(公告)号：US20130214370A1

    公开(公告)日：2013-08-22

    申请号：US13695972

    申请日：2011-05-03

    Applicant: Javed Hussain ,  Mohammad Yunus ,  James T. Suminto

    Inventor： Javed Hussain ,  Mohammad Yunus ,  James T. Suminto

    IPC: B81B7/00

    CPC classification number: B81B7/0058 ,  B81C1/00888 ,  B81C2201/053 ,  G01L9/0055 ,  H01L21/78

    Abstract: A Micro-Electro-Mechanical System (MEMS) pressure sensor is disclosed, comprising a gauge wafer, comprising a micromachined structure comprising a membrane region and a pedestal region, wherein a first surface of the micromachined structure is configured to be exposed to a pressure medium that exerts a pressure resulting in a deflection of the membrane region. The gauge wafer also comprises a plurality of sensing elements patterned on the electrical insulation layer on a second surface in the membrane region, wherein a thermal expansion coefficient of the material of the sensing elements substantially matches with a thermal expansion coefficient of the material of the gauge wafer. The pressure sensor comprises a cap wafer coupled to the gauge wafer, which includes a recess on an inner surface of the cap wafer facing the gauge wafer that defines a sealed reference cavity that encloses and prevents exposure of the sensing elements to an external environment.

    Abstract translation: 公开了一种微机电系统（MEMS）压力传感器，其包括量规晶片，其包括微加工结构，其包括膜区域和基座区域，其中微机械加工结构的第一表面被配置为暴露于压力介质 其施加导致膜区域偏转的压力。 测量晶片还包括在膜区域中的第二表面上在电绝缘层上图案化的多个感测元件，其中感测元件的材料的热膨胀系数基本上与量规材料的热膨胀系数相匹配 晶圆。 压力传感器包括联接到量规晶片的盖子晶片，其包括位于盖晶片的内表面上的面向量规晶片的凹部，该凹槽限定封闭并防止感测元件暴露于外部环境的密封参考腔。

    PROCESS FOR MINIMIZING CHIPPING WHEN SEPARATING MEMS DIES ON A WAFER
    79.
    发明申请
    PROCESS FOR MINIMIZING CHIPPING WHEN SEPARATING MEMS DIES ON A WAFER 审中-公开
    当在水平分离MEMS表面时最小化流动的过程

    公开(公告)号：US20130130424A1

    公开(公告)日：2013-05-23

    申请号：US13695980

    申请日：2011-05-03

    Applicant: Roger Horton ,  Javed Hussain

    Inventor： Roger Horton ,  Javed Hussain

    IPC: H01L21/78

    CPC classification number: B81B7/0058 ,  B81C1/00888 ,  B81C2201/053 ,  G01L9/0055 ,  H01L21/78

    Abstract: A method for separating a plurality of dies on a Micro-Electro-Mechanical System (MEMS) wafer comprising scribing a notch on a first side of the wafer between at least two of the plurality of dies on a first surface and depositing a metal on the first surface of the plurality of dies. The method further comprises scribing a second side of the wafer between at least two of the plurality of dies from a second surface thereof through the notch. The first side and second side are substantially parallel and opposite each other and the first surface and the second surface are substantially parallel and opposite each other. In a process in accordance with the present invention, a method to minimize chipping of the bonding portion of a MEMs device during sawing of the wafer is provided, which minimally affects the process steps associated with separating the die on a wafer.

    Abstract translation: 一种用于在微电子机械系统（MEMS）晶片上分离多个管芯的方法，包括在第一表面上的多个管芯中的至少两个之间划定晶片的第一侧上的缺口并在其上沉积金属 多个管芯的第一表面。 该方法还包括在多个管芯中的至少两个从其第二表面通过凹口划线晶片的第二侧。 第一侧面和第二侧面基本上平行且彼此相对，并且第一表面和第二表面基本上平行且彼此相对。 在根据本发明的方法中，提供了一种在晶片锯切期间最小化MEM器件的接合部分的破损的方法，其最小程度地影响与在晶片上分离晶片相关的工艺步骤。

    MEMS SENSOR AND METHOD FOR PRODUCING MEMS SENSOR, AND MEMS PACKAGE
    80.
    发明申请
    MEMS SENSOR AND METHOD FOR PRODUCING MEMS SENSOR, AND MEMS PACKAGE 有权
    用于生产MEMS传感器的MEMS传感器和方法以及MEMS封装

    公开(公告)号：US20120139064A1

    公开(公告)日：2012-06-07

    申请号：US13274292

    申请日：2011-10-14

    Applicant: Goro Nakatani ,  Toma Fujita

    Inventor： Goro Nakatani ,  Toma Fujita

    IPC: H01L27/20 ,  H01L21/00 ,  H01L29/84

    CPC classification number: B81C1/00801 ,  B81B7/02 ,  B81B2201/0242 ,  B81B2203/0136 ,  B81B2203/04 ,  B81C1/00182 ,  B81C2201/053 ,  G01C19/5733 ,  G01C19/5769 ,  G01P15/125 ,  H01L2224/48137

    Abstract: A capacitance type gyro sensor includes a semiconductor substrate, a first electrode integrally including a first base portion and first comb tooth portions and a second electrode integrally including a second base portion and second comb tooth portions, formed by processing the surface portion of the semiconductor substrate. The first electrode has first drive portions that extend from opposed portions opposed to the respective second comb tooth portions on the first base portion toward the respective second comb tooth portions. The second electrode has second drive portions formed on the tip end portions of the respective second comb tooth portions opposed to the respective first drive portions. The first drive portions and the second drive portions engage with each other at an interval like comb teeth.

    Abstract translation: 电容式陀螺传感器包括半导体基板，一体地包括第一基座部分和第一梳齿部分的第一电极和通过处理半导体基板的表面部分而形成的包括第二基底部分和第二梳齿部分的第二电极 。 第一电极具有第一驱动部分，其从在第一基部上的相应的第二梳齿部分相对的部分朝向相应的第二梳齿部分延伸。 第二电极具有形成在与第一驱动部分相对的各个第二梳齿部分的末端部分上的第二驱动部分。 第一驱动部分和第二驱动部分以梳齿的间隔彼此接合。

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