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公开(公告)号:US20230228623A1
公开(公告)日:2023-07-20
申请号:US17890275
申请日:2022-08-18
Applicant: AUO Corporation
Inventor: Te-Ming Chen , Tsung-Han Chen
IPC: G01J1/44 , H01L27/146
CPC classification number: G01J1/44 , H01L27/14629 , H01L27/14685 , G01J2001/446
Abstract: A sensing device includes a flexible substrate, a reflective layer, a planarization layer, plural switching elements and plural sensing elements. The flexible substrate has plural recesses on a surface. The reflective layer is located on the flexible substrate and conforms to an inner surface of the plural recesses. The planarization layer is disposed on the reflective layer. The plural switching elements are disposed on the planarization layer. The plural sensing elements are disposed on the planarization layer and electrically connected to the plural switching elements respectively. A method for fabricating a sensing device is also provided.
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公开(公告)号:US20230184586A1
公开(公告)日:2023-06-15
申请号:US17896063
申请日:2022-08-25
Applicant: Innolux Corporation
Inventor: Kazuyuki Hashimoto
IPC: G01J1/44
CPC classification number: G01J1/44 , G01J2001/446 , G01R31/31723
Abstract: An electronic device is provided. The electronic device includes an electronic component and a sensing circuit. The sensing circuit is electrically connected to the electronic component through a sensing node. The sensing circuit comprises a first capacitor, a first transistor, a second transistor, a third transistor and a fourth transistor. The second transistor is electrically connected between the first capacitor and a control terminal of the first transistor. The third transistor is electrically connected to the first transistor. The fourth transistor is electrically connected to the first transistor. The first capacitor is electrically connected between the sensing node and the control terminal of the first transistor.
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公开(公告)号:US20230170359A1
公开(公告)日:2023-06-01
申请号:US17990600
申请日:2022-11-18
Applicant: HENSOLDT Sensors GmbH
Inventor: Michael Assel
IPC: H01L27/146 , H04N5/378 , G01J1/44
CPC classification number: H01L27/14607 , G01J1/44 , H01L27/14683 , H04N5/378 , G01J2001/446 , G01J2001/448
Abstract: A semiconductor detector for tracking of point-like sources comprises a plurality of pixels. The pixels are arranged in a rectangular lattice. Each pixel has a surface with a photosensitive region for detecting light. The photosensitive region has a geometric layout adapted to reduce a signal variation if the point source moves from a first pixel to a second pixel, wherein the second pixel is located at an adjacent lattice position with respect to the first pixel.
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公开(公告)号:US20190250102A1
公开(公告)日:2019-08-15
申请号:US16345439
申请日:2017-07-20
Applicant: SHARP KABUSHIKI KAISHA , The University of Tokyo
Inventor: KUNIHIKO IIZUKA , YOSHIHISA FUJIMOTO , SOO-HYEON KIM , TERUO FUJII
CPC classification number: G01N21/6428 , B01L3/50273 , C12Q1/686 , G01J1/44 , G01J2001/446 , G01N21/03 , G01N21/64 , G01N21/8507 , G01N33/543 , G01N37/00 , G01N2201/12
Abstract: Provided are a fluorescent testing system, a molecular testing method, and a fluorescent testing method that can avoid enlargement and complication. A fluorescent testing system (1) includes: an excitation light source (23) that radiates excitation light (L1) to protein to which a fluorescent probe is added; a silicon integrated circuit (10) including a photon detection unit (13) that detects light by a photodiode (12); a holding layer (30) including a microwell (31) that is provided above the photodiode (12) and holds the protein to which the fluorescent probe is added; and a control unit (24) that causes the excitation light source (23) to radiate the excitation light (L1) to the protein which. is held and to which the fluorescent probe is added and causes the photon detection unit (13), after extinguishment of the excitation light (L1), to detect fluorescence emitted from the protein to which the fluorescent probe is added.
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公开(公告)号:US20190212194A1
公开(公告)日:2019-07-11
申请号:US16325460
申请日:2016-08-07
Applicant: ams International AG
Inventor: Bernhard Greimel-Rechling , Peter Bliem , Herbert Lenhard , Josef Kriebernegg , Joachim Lechner , Christian Halper
CPC classification number: G01J1/46 , G01J1/18 , G01J2001/4426 , G01J2001/444 , G01J2001/446
Abstract: An optical sensor arrangement comprises a photodiode (11), an integrator (12) with an integrator input (15) coupled to the photodiode (11), a comparator (13) with a first input (18) coupled to an integrator output (16) of the integrator (12), and a reference capacitor circuit (14) that is coupled to the integrator input (15) and is designed to provide a charge package to the integrator input (15). In a start phase (A), charge packages are provided to the integrator input (15), until a comparator input voltage (VIN) at the first input (18) of the comparator (13) crosses a comparator switching point.
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公开(公告)号:US20190063992A1
公开(公告)日:2019-02-28
申请号:US15970960
申请日:2018-05-04
Inventor: Yingying LIU , Zhen WU , Yongjun LIAO , Xing LI , Huijun MA
CPC classification number: G01J1/44 , G01J1/0228 , G01J1/0414 , G01J1/0425 , G01J1/0477 , G01J1/1626 , G01J1/46 , G01J2001/4247 , G01J2001/4413 , G01J2001/446
Abstract: An optical parameter measurement device and a corresponding method are provided. A light beam from a to-be-tested display panel is split by a beam-splitting assembly into at least two testing light beams. A voltage value corresponding to a first testing light beam is measured by a trans-impedance amplification circuit corresponding to a first optical sensor. Next, an integration time period is determined by a control circuit according to voltage values from the trans-impedance amplification circuit and a predetermined relational model between voltage values corresponding to the light intensities and integration time periods. A voltage value corresponding to a second testing light beam is finely measured by the integration circuit corresponding to a second optical sensor within the integration time period. Finally, the display brightness value of the to-be-tested display panel is determined by the control circuit according to a voltage value from the integration circuit within the integration time period.
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公开(公告)号:US20180364272A1
公开(公告)日:2018-12-20
申请号:US15065724
申请日:2016-03-09
Applicant: Cubic Corporation
Inventor: Tony Maryfield , Mahyar Dadkhah
CPC classification number: G01P5/26 , F41G1/36 , F41G1/38 , F41G3/06 , F41G3/065 , F41G3/08 , F41G3/145 , G01J1/44 , G01J2001/4406 , G01J2001/446 , G01S7/4816 , G01S7/486 , G01S17/023 , G01S17/88 , G01S17/95 , G02B13/14 , G02B23/105 , G02B23/18 , G02B27/20 , G06T5/003 , G06T5/20 , G06T5/50 , G06T7/20 , G06T7/33 , G06T7/73 , G06T11/60 , G06T2207/10012 , G06T2207/10016 , G06T2207/10048 , G06T2207/20224 , G06T2207/30212 , H01L31/02005 , H01L31/02019 , H01L31/0203 , H01L31/03046 , H01L31/105 , H04N5/23222 , H04N5/33 , H04N13/204
Abstract: Techniques are disclosed for enabling a wind-sensing optical scope to communicate with external components to provide for a ballistic solution. Techniques may further incorporate cost saving features such as the utilization of a photo diode and/or other features. The wind-sensing optical scope may include various sensors to collect data for the ballistic solution, and/or data from external sensors may be used. Techniques may further incorporate range finding in the wind-sensing optical scope, depending on desired functionality.
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公开(公告)号:US20180233521A1
公开(公告)日:2018-08-16
申请号:US15952053
申请日:2018-04-12
Applicant: Artilux Corporation
Inventor: Yun-Chung Na , Szu-Lin Cheng , Shu-Lu Chen , Han-Din Liu , Hui-Wen Chen , Che-Fu Liang , Yuan-Fu Lyu , Chien-Lung Chen , Chung-Chih Lin , Kuan-Chen Chu
CPC classification number: H01L27/1461 , G01J1/0411 , G01J1/44 , G01J3/0208 , G01J3/0259 , G01J2001/446 , G01J2003/2806 , G01S7/4914 , G01S7/4915 , G01S17/023 , G01S17/36 , G01S17/89 , G02B1/11 , G02B3/0006 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/14634 , H01L27/14636 , H01L27/14645 , H01L27/14649 , H01L27/1469 , H01L31/02162 , H01L31/02325 , H01L31/028 , H01L31/0312 , H01L31/0336 , H01L31/1055 , H01L31/113 , H04N5/359 , H04N5/378 , H04N9/04553
Abstract: An optical apparatus that includes: a semiconductor substrate formed from a first material, the semiconductor substrate including a first n-doped region; and a photodiode supported by the semiconductor substrate, the photodiode including an absorption region configured to absorb photons and to generate photo-carriers from the absorbed photons, the absorption region being formed from a second material different than the first material and including: a first p-doped region; and a second n-doped region coupled to the first n-doped region, wherein a second doping concentration of the second n-doped region is less than or substantially equal to a first doping concentration of the first n-doped region.
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公开(公告)号:US20180209844A1
公开(公告)日:2018-07-26
申请号:US15628648
申请日:2017-06-21
Applicant: Novatek Microelectronics Corp.
Inventor: Cheng-Kuang Sun , Ying-Neng Huang
IPC: G01J1/44 , H01L31/16 , H01L31/075 , G06K9/00
CPC classification number: G01J1/44 , G01J2001/446 , G06K9/00013 , G06K9/0004 , H01L31/075 , H01L31/162 , Y02E10/50
Abstract: An optical sensor including a substrate and a plurality of pixel units are provided. The pixel units are disposed on the substrate, and each of the pixel units includes a light source element, a light sensor element, a circuit unit, and an isolation element. Herein, the light source element emits light, the light sensor element senses an optical image. The circuit unit is configured to drive the light source element to emit light and to drive the light sensor element to sense the optical image. The isolation element isolates the light sensor element from the light source element. In addition, the light source element is disposed between the isolation element of the respective pixel unit and an isolation element of a neighboring pixel unit.
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公开(公告)号:US10001406B2
公开(公告)日:2018-06-19
申请号:US15175958
申请日:2016-06-07
Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Inventor: Roger Panicacci
CPC classification number: G01J1/4228 , G01J1/44 , G01J2001/446 , H04N5/378
Abstract: An image sensor may include an array of image pixels coupled to analog-to-digital conversion circuitry formed from pinned photodiode charge transfer circuits. Majority charge carriers for the pinned photodiodes in the charge transfer circuits may be electrons for photodiode wells formed from n-type doped regions and may be holes for photodiode formed from p-type doped regions. Pinned photodiodes may be used for charge integration onto a capacitive circuit node. Pinned photodiodes may also be used for charge subtraction from a capacitive circuit node. Comparator circuitry may be used to determine digital values for the pixel output levels in accordance with single-slope conversion, successive-approximation-register conversion, cyclic conversion, and first or second order delta-sigma conversion techniques. The array of image pixels used for imaging may have a conversion mode wherein at least a portion of the pixel circuitry in the array are operated similar to the charge transfer circuits.
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