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    Vibrating beam force sensor
    71.
    发明授权
    Vibrating beam force sensor 有权
    振动梁力传感器

    公开(公告)号：US06269698B1

    公开(公告)日：2001-08-07

    申请号：US09340559

    申请日：1999-06-28

    Applicant: James R. Woodruff

    Inventor： James R. Woodruff

    IPC: G01P1510

    CPC classification number: H03H9/24 ,  G01P15/097 ,  G01P2015/0828

    Abstract: A mechanical resonator having interconnected vibrating beams and counter balances whereby transfer of energy from the vibrating beams is essentially eliminated.

    Abstract translation: 具有互连的振动梁和平衡器的机械谐振器，从而基本上消除了来自振动梁的能量传递。

    Electrostatic capacitive sensor and method for manufacturing the same
    72.
    发明授权
    Electrostatic capacitive sensor and method for manufacturing the same 失效
    静电电容传感器及其制造方法

    公开(公告)号：US06265238B1

    公开(公告)日：2001-07-24

    申请号：US09500010

    申请日：2000-02-08

    Applicant: Kaneo Yaji ,  Shinji Kobayashi

    Inventor： Kaneo Yaji ,  Shinji Kobayashi

    IPC: H01L2100

    CPC classification number: G01P15/125 ,  G01P15/0802 ,  G01P2015/0828

    Abstract: A miniature electrostatic capacitive sensor in which electrical insulation is reliably established between a CV conversion circuit and a sensing unit. Also disclosed is a manufacturing method for the above type of capacitive sensor. The capacitive sensor is constructed of a sensing unit having a movable electrode and a stationary electrode, and a CV-conversion-circuit-forming portion having a CV conversion circuit. The movable electrode is constructed of a first support portion, a leaf spring connected to the first support portion, and a mass portion movably supported by the leaf spring. The stationary electrode is formed of a second support portion and a projecting portion connected to the second support portion. The CV-conversion-circuit forming portion and the first and second support portion are made thin. Accordingly, a shallow clearance is formed between the CV-conversion-circuit forming portion and each of the first support portion and the stationary electrode. An insulating substance can thus be positively deposited in the clearance, thereby forming an electrically insulating portion between the CV conversion circuit and the sensing unit.

    Abstract translation: 一种微型静电电容传感器，其中在CV转换电路和感测单元之间可靠地建立电绝缘。 还公开了上述类型的电容式传感器的制造方法。 电容传感器由具有可动电极和固定电极的感测单元和具有CV转换电路的CV转换电路形成部构成。 可移动电极由第一支撑部分，连接到第一支撑部分的板簧和由板簧可移动地支撑的质量部分构成。 固定电极由第二支撑部分和连接到第二支撑部分的突出部分形成。 CV变换电路形成部分和第一和第二支撑部分变薄。 因此，在CV转换电路形成部分和第一支撑部分和固定电极之间形成浅间隙。 因此，绝缘物质可以积极地沉积在间隙中，从而在CV转换电路和感测单元之间形成电绝缘部分。

    High output sensor and accelerometer for implantable medical device
    77.
    发明授权
    High output sensor and accelerometer for implantable medical device 有权
    高输出传感器和加速度计用于可植入医疗设备

    公开(公告)号：US6038475A

    公开(公告)日：2000-03-14

    申请号：US197721

    申请日：1998-11-23

    Applicant: James M. Sikorski ,  David A. Ruben

    Inventor： James M. Sikorski ,  David A. Ruben

    IPC: A61N1/365 ,  G01P1/02 ,  G01P15/08 ,  G01P15/09 ,  A61N1/375

    CPC classification number: G01P1/023 ,  A61N1/36542 ,  G01P1/02 ,  G01P15/0802 ,  G01P15/0922 ,  G01P2015/0828

    Abstract: An accelerometer and sensor assemblies for medical implantable devices such as pacemakers, cardioverters, IPGs, PCDs, defibrillators, ICDs, and the like, includes at least one intermediate metallization layer sandwiched between a first lower surface of at least one upper sheet formed from a piezoelectric material surface, and a second upper surface of at least one lower sheet formed from a piezoelectric material. The at least one upper sheet has a first outer edge disposed between its first upper and first lower surfaces. The at least one lower sheet has a second outer edge disposed between its second upper and second lower surfaces. The at least one intermediate metallization layer is not disposed at all locations between the first lower surface and the second upper surface, but extends to an external region disposed between the first outer edge and the second outer edge, and is electrically connected to the external region. Various embodiments of the sensor or accelerometer are capable of providing high amplitude output signals and reducing parts and manufacturing costs.

    Abstract translation: 用于诸如起搏器，心律转换器，IPG，PCD，除颤器，ICD等的医学可植入装置的加速度计和传感器组件包括夹在由压电元件形成的至少一个上片的第一下表面之间的至少一个中间金属化层 材料表面和由压电材料形成的至少一个下片的第二上表面。 所述至少一个上片具有设置在其第一上表面和第一下表面之间的第一外边缘。 所述至少一个下片具有设置在其第二上表面和第二下表面之间的第二外边缘。 至少一个中间金属化层不设置在第一下表面和第二上表面之间的所有位置处，而是延伸到设置在第一外边缘和第二外边缘之间的外部区域，并且电连接到外部区域 。 传感器或加速度计的各种实施例能够提供高幅度输出信号并减少部件和制造成本。

    Capacitor center of area sensitivity in angular motion micro-electromechanical systems
    79.
    发明授权
    Capacitor center of area sensitivity in angular motion micro-electromechanical systems 失效
    角运动微机电系统中的电容器中心区域灵敏度

    公开(公告)号：US6000287A

    公开(公告)日：1999-12-14

    申请号：US143255

    申请日：1998-08-28

    Applicant: Christoph P. Menzel

    Inventor： Christoph P. Menzel

    IPC: G01P15/08 ,  G01P15/125 ,  G01P21/00

    CPC classification number: G01P15/125 ,  G01P15/0802 ,  G01P21/00 ,  G01P2015/0828 ,  G01P2015/0831

    Abstract: A method is provided that may be used to design a family of capacitive microaccelerometers with different members of the family having different sensitivities to acceleration without having to make a radical design change to the basic construction. The microaccelerometer is a capacitively sensed angular motion micro-electromechanical system. The microaccelerometer includes a stationary plate electrode and a movable plate electrode substantially parallel with the stationary plate electrode. The movable plate electrode rotates through a dielectric fluid about an axis of rotation parallel to the stationary plate electrode in response to acceleration. The method includes determining the desired sensitivity and changing the stationary plate center of area relative to the movable plate so as to obtain the desired sensitivity.

    Abstract translation: 提供了一种方法，其可用于设计具有与加速度不同灵敏度的族的不同部件的电容式微加速度计系列，而不必对基本结构进行彻底的设计改变。 微加速度计是电容式感测的角运动微机电系统。 微加速度计包括固定板电极和与固定板电极基本平行的可动板电极。 响应于加速度，可移动板电极围绕平行于固定板电极的旋转轴旋转穿过介电流体。 该方法包括确定期望的灵敏度并相对于可移动板改变固定板的中心面积以获得所需的灵敏度。

    Method for integrating microelectromechanical devices with electronic circuitry
    80.
    发明授权
    Method for integrating microelectromechanical devices with electronic circuitry 失效
    将微机电装置与电子电路集成的方法

    公开(公告)号：US5963788A

    公开(公告)日：1999-10-05

    申请号：US974586

    申请日：1997-11-19

    Applicant: Carole C. Barron ,  James G. Fleming ,  Stephen Montague

    Inventor： Carole C. Barron ,  James G. Fleming ,  Stephen Montague

    IPC: B81B3/00 ,  B81B7/00 ,  B81B7/02 ,  G03F7/09 ,  G03F7/207 ,  G03F9/00 ,  H01L21/00

    CPC classification number: G03F7/094 ,  B81C1/00246 ,  G03F9/70 ,  H01L24/24 ,  B81C2203/0728 ,  G01P2015/0828 ,  H01L2924/1305 ,  H01L2924/14 ,  Y10S148/105

    Abstract: A method is disclosed for integrating one or more microelectromechanical (MEM) devices with electronic circuitry on a common substrate. The MEM device can be fabricated within a substrate cavity and encapsulated with a sacrificial material. This allows the MEM device to be annealed and the substrate planarized prior to forming electronic circuitry on the substrate using a series of standard processing steps. After fabrication of the electronic circuitry, the electronic circuitry can be protected by a two-ply protection layer of titanium nitride (TiN) and tungsten (W) during an etch release process whereby the MEM device is released for operation by etching away a portion of a sacrificial material (e.g. silicon dioxide or a silicate glass) that encapsulates the MEM device. The etch release process is preferably performed using a mixture of hydrofluoric acid (HF) and hydrochloric acid (HCI) which reduces the time for releasing the MEM device compared to use of a buffered oxide etchant. After release of the MEM device, the TiN:W protection layer can be removed with a peroxide-based etchant without damaging the electronic circuitry.

    Abstract translation: 公开了用于将一个或多个微机电（MEM）装置与公共基板上的电子电路集成的方法。 MEM器件可以在衬底腔内制造并用牺牲材料封装。 这允许MEM器件被退火，并且在使用一系列标准处理步骤在衬底上形成电子电路之前将衬底平坦化。 在电子电路制造之后，在蚀刻释放过程期间，电子电路可以被氮化钛（TiN）和钨（W）的双层保护层保护，由此MEM器件通过蚀刻去除部分 封装MEM器件的牺牲材料（例如二氧化硅或硅酸盐玻璃）。 蚀刻释放方法优选使用氢氟酸（HF）和盐酸（HCl）的混合物进行，与使用缓冲的氧化物蚀刻剂相比，其减少了释放MEM装置的时间。 在释放MEM器件之后，可以用基于过氧化物的蚀刻剂去除TiN：W保护层，而不损坏电子电路。

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