中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

107 records (took 0.022 seconds)

    Parallel-plate electrode reactor having an inductive antenna coupling power through a parallel plate electrode
    71.
    发明授权
    Parallel-plate electrode reactor having an inductive antenna coupling power through a parallel plate electrode 失效
    平行板电极反应器具有通过平行板电极的感应天线耦合功率

    公开(公告)号：US06361644B1

    公开(公告)日：2002-03-26

    申请号：US08936028

    申请日：1997-09-23

    Applicant: Kenneth S. Collins

    Inventor： Kenneth S. Collins

    IPC: H01L2100

    CPC classification number: H01J37/32458 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32871 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/6831

    Abstract: The invention is embodied by a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor window, a base within the chamber for supporting the workpiece during processing thereof, a gas inlet system for admitting a plasma precursor gas into the chamber, and an inductive antenna adjacent a side of the semiconductor window opposite the base for coupling power into the interior of the chamber through the semiconductor window electrode.

    Abstract translation: 本发明由用于处理工件的等离子体反应器实现，包括限定处理室的反应器壳体，半导体窗口，用于在其处理期间支撑工件的室内的基座，用于将等离子体前体气体引入的气体入口系统 所述腔室和靠近所述半导体窗口的与所述基座相对的一侧的感应天线，用于通过所述半导体窗口电极将功率耦合到所述腔室的内部。

    Apparatus and method for pulsed plasma processing of a semiconductor substrate
    73.
    发明申请
    Apparatus and method for pulsed plasma processing of a semiconductor substrate 有权
    用于半导体衬底脉冲等离子体处理的装置和方法

    公开(公告)号：US20010023743A1

    公开(公告)日：2001-09-27

    申请号：US09860698

    申请日：2001-05-16

    Inventor： Stephen E. Savas

    IPC: C23F001/02

    CPC classification number: H01J37/321 ,  H01J37/32082 ,  H01J37/32706 ,  H01J2237/004 ,  H01J2237/3345

    Abstract: Apparatus and method for an improved etch process. A power source alternates between high and low power cycles to produce and sustain a plasma discharge. Preferably, the high power cycles couple sufficient power into the plasma to produce a high density of ions (null1011cmnull3) for etching. Preferably, the low power cycles allow electrons to cool off to reduce the average random (thermal) electron velocity in the plasma. Preferably, the low power cycle is limited in duration as necessary to prevent excessive plasma loss to the walls or due to recombination of negative and positive ions. It is an advantage of these and other aspects of the present invention that average electron thermal velocity is reduced, so fewer electrons overcome the plasma sheath and accumulate on substrate or mask layer surfaces. A separate power source alternates between high and low power cycles to accelerate ions toward the substrate being etched. In one embodiment, a strong bias is applied to the substrate in short bursts. Preferably, multiple burst occur during the average transit time for an ion to cross the plasma sheath and reach the substrate surface. Ions are pulsed toward the surface for etching. These ions are not deflected into sidewalls as readily as ions in conventional low energy etch processes due to reduced charge buildup and the relatively low duty cycle of power used to pulse ions toward the substrate surface.

    Abstract translation: 用于改进蚀刻工艺的装置和方法。 电源在高功率和低功率周期之间交替产生和维持等离子体放电。 优选地，高功率循环将足够的功率耦合到等离子体中以产生用于蚀刻的高密度离子（> = 1011cm-3）。 优选地，低功率周期允许电子冷却以降低等离子体中的平均随机（热）电子速度。 优选地，低功率循环的持续时间受到限制，以防止对壁的过度等离子体损失或由于负离子和正离子的复合。 本发明的这些和其它方面的优点是平均电子热速度降低，因此较少的电子克服了等离子体鞘并积聚在衬底或掩模层表面上。 单独的电源在高功率和低功率循环之间交替，以将离子加速朝向被蚀刻的衬底。 在一个实施例中，以短脉冲串将强偏压施加到衬底。 优选地，在平均通过时间期间发生多次爆发，以使离子穿过等离子体护套并到达衬底表面。 离子脉冲朝表面进行蚀刻。 这些离子由于电荷累积减少和脉冲离子朝向衬底表面的相对低的功率占空比而不会像传统的低能量蚀刻工艺中的离子一样容易地偏转到侧壁中。

    Apparatus and method for pulsed plasma processing of a semiconductor substrate
    74.
    发明授权
    Apparatus and method for pulsed plasma processing of a semiconductor substrate 失效
    用于半导体衬底脉冲等离子体处理的装置和方法

    公开(公告)号：US06253704B1

    公开(公告)日：2001-07-03

    申请号：US09398553

    申请日：1999-09-17

    Applicant: Stephen E. Savas

    Inventor： Stephen E. Savas

    IPC: C23C1600

    CPC classification number: H01J37/321 ,  H01J37/32082 ,  H01J37/32706 ,  H01J2237/004 ,  H01J2237/3345

    Abstract: Apparatus and method for an improved etch process. A power source alternates between high and low power cycles to produce and sustain a plasma discharge. Preferably, the high power cycles couple sufficient power into the plasma to produce a high density of ions (≳1011cm−3) for etching. Preferably, the low power cycles allow electrons to cool off to reduce the average random (thermal) electron velocity in the plasma. Preferably, the low power cycle is limited in duration as necessary to prevent excessive plasma loss to the walls or due to recombination of negative and positive ions. It is an advantage of these and other aspects of the present invention that average electron thermal velocity is reduced, so fewer electrons overcome the plasma sheath and accumulate on substrate or mask layer surfaces. A separate power source alternates between high and low power cycles to accelerate ions toward the substrate being etched. In one embodiment, a strong bias is applied to the substrate in short bursts. Preferably, multiple burst occur during the average transit time for an ion to cross the plasma sheath and reach the substrate surface. Ions are pulsed toward the surface for etching. These ions are not deflected into sidewalls as readily as ions in conventional low energy etch processes due to reduced charge buildup and the relatively low duty cycle of power used to pulse ions toward the substrate surface.

    Abstract translation: 用于改进蚀刻工艺的装置和方法。 电源在高功率和低功率周期之间交替产生和维持等离子体放电。 优选地，高功率循环将足够的功率耦合到等离子体中以产生用于蚀刻的高密度离子（>〜1011cm-3）。 优选地，低功率周期允许电子冷却以降低等离子体中的平均随机（热）电子速度。 优选地，低功率循环的持续时间受到限制，以防止对壁的过度等离子体损失或由于负离子和正离子的复合。 本发明的这些和其它方面的优点是平均电子热速度降低，因此较少的电子克服了等离子体鞘并积聚在衬底或掩模层表面上。 单独的电源在高功率和低功率循环之间交替，以将离子加速朝向被蚀刻的衬底。 在一个实施例中，以短脉冲串将强偏压施加到衬底。 优选地，在平均通过时间期间发生多次爆发，以使离子穿过等离子体护套并到达衬底表面。 离子脉冲朝表面进行蚀刻。 这些离子由于电荷累积减少和脉冲离子朝向衬底表面的相对低的功率占空比而不会像传统的低能量蚀刻工艺中的离子一样容易地偏转到侧壁中。

    High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process
    75.
    发明授权
    High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process 失效
    高压高反应性稀释气体含量高等离子体离子密度等离子体氧化物蚀刻工艺

    公开(公告)号：US06238588B1

    公开(公告)日：2001-05-29

    申请号：US08733554

    申请日：1996-10-21

    Applicant: Kenneth Collins ,  David Groechel ,  Raymond Hung ,  Michael Rice ,  Gerald Yin ,  Jian Ding ,  Chunshi Cui

    Inventor： Kenneth Collins ,  David Groechel ,  Raymond Hung ,  Michael Rice ,  Gerald Yin ,  Jian Ding ,  Chunshi Cui

    IPC: B44C122

    CPC classification number: H01L21/02063 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

    Abstract: The invention is embodied in a method of processing a semiconductor workpiece in a plasma reactor chamber, including supplying a polymer and etchant precursor gas containing at least carbon and fluorine into the chamber at a first flow rate sufficient of itself to maintain a gas pressure in the chamber in a low pressure range below about 20 mT, supplying a relatively non-reactive gas into the chamber at second flow rate sufficient about one half or more of the total gas flow rate into the chamber, in combination with the first flow rate of the precursor gas, to maintain the gas pressure in the chamber in a high pressure range above 20 mT, and applying plasma source power into the chamber to form a high ion density plasma having an ion density in excess of 1010 ions per cubic centimeter. In one application of the invention, the workpiece includes an oxygen-containing overlayer to be etched by the process and a non-oxygen-containing underlayer to be protected from etching, the precursor gas dissociating in the plasma into fluorine-containing etchant species which etch the oxygen-containing layer and carbon-containing polymer species which accumulate on the non-oxygen-containing underlayer. Alternatively, the high pressure range may be defined as a pressure at which the skin depth of the inductive field exceeds {fraction (1/10)} of the gap between the inductive antenna and the workpiece.

    Abstract translation: 本发明体现在一种在等离子体反应器室中处理半导体工件的方法，包括以足以自动维持气体压力的第一流量将至少含有碳和氟的聚合物和蚀刻剂前体气体供应到室中 在低于大约20mT的低压范围内，将第二流量的第二流量的相对非反应性气体供应到室内的总气体流速的约一半以上，并与第一流量 将气体压力保持在高于20mT的高压范围内，并将等离子体源功率施加到腔室中以形成离子密度超过每立方厘米1010离子的高离子密度等离子体。 在本发明的一个应用中，工件包括通过该方法蚀刻的含氧覆层和不受蚀刻保护的非含氧底层，前体气体在等离子体中解离成含氟蚀刻剂，其蚀刻 含氧层和积聚在非含氧底层上的含碳聚合物种类。 或者，高压范围可以被定义为感应场的趋肤深度超过感应天线和工件之间的间隙的{分数（1/10）}的压力。

    Plasma etching method and plasma etching apparatus
    77.
    发明授权
    Plasma etching method and plasma etching apparatus 失效
    等离子体蚀刻方法和等离子体蚀刻装置

    公开(公告)号：US06165907A

    公开(公告)日：2000-12-26

    申请号：US850700

    申请日：1997-05-02

    Applicant: Ikuo Yoneda ,  Hideki Kanai ,  Shinichi Ito

    Inventor： Ikuo Yoneda ,  Hideki Kanai ,  Shinichi Ito

    IPC: G03F1/26 ,  H01L21/3065 ,  H01L21/302 ,  H01L21/461

    CPC classification number: G03F1/26 ,  H01J37/32706 ,  H01J2237/3345 ,  H01L21/3065

    Abstract: A plasma etching method includes the steps of forming an etching mask on a work piece, forming a patterned film, made of a material having an etching rate of 80% or more to 120% or less based on an etching rate for the work piece, on the work piece having the etching mask thereon, and etching the work piece and the patterned film formed thereon at the same time by use of a reactive gas plasma, wherein the film is formed with such a thickness that the thickness of a remaining portion of the film is equal to zero or more after the work piece is etched to a desired depth.

    Abstract translation: 等离子体蚀刻方法包括以下步骤：基于工件的蚀刻速率，在工件上形成蚀刻掩模，形成图案化膜，由蚀刻速率为80％以上至120％以下的材料制成， 在其上具有蚀刻掩模的工件上，并且通过使用反应性气体等离子体同时蚀刻工件及其上形成的图案化膜，其中所述膜形成为使得所述膜的剩余部分的厚度 在将工件蚀刻到期望的深度之后，该膜等于零或更多。

    Vacuum processing chamber having multi-mode access
    78.
    发明授权
    Vacuum processing chamber having multi-mode access 失效
    真空处理室具有多模式存取

    公开(公告)号：US6095083A

    公开(公告)日：2000-08-01

    申请号：US892300

    申请日：1997-07-14

    Applicant: Michael Rice ,  Eric Askarinam ,  Gerhard Schneider ,  Kenneth S. Collins

    Inventor： Michael Rice ,  Eric Askarinam ,  Gerhard Schneider ,  Kenneth S. Collins

    IPC: H01J37/32 ,  H01L21/311 ,  H01L21/683 ,  C23C16/00 ,  H05H1/00

    CPC classification number: H01L21/31116 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01L21/6831 ,  H01F2029/143 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346

    Abstract: The case of maintainability and component replacement for a vacuum processing chamber is enhanced by providing a vacuum chamber roof assembly whose connection to the vacuum chamber body is through a clamped connection. Accessories needed for the roof assembly, e.g. cooling, heating, RF power, are separately supported and terminated to an accessories supporting cold plate, which is separately mounted such it is easily movable, for example by hinging from the chamber body. The roof of the chamber can then easily be separated from the chamber body and replaced. In an further mode the chamber roof can be easily raised to provide easy access to modular components inside the processing chamber. All components exposed to the plasma in the chamber can be easily accessed and replaced. Moreover, such access is provided without the need to disconnect utilities or instrumentation, since the release of a latch and pivoting the cold plate assembly away from the chamber body upwards is all that is needed to gain access to either the top of the roof of the processing chamber or the inside of the chamber. Chamber roof cooling is provided through a separable connection which is spring clamped to provide a high confidence that uniform thermal conductivity across a clamped joint is maintained.

    Abstract translation: 通过提供真空室顶部组件来增强真空处理室的可维护性和部件更换的情况，真空室顶部组件与真空室主体的连接通过夹紧连接。 屋顶组件所需的配件，例如 冷却，加热，RF功率分别被支撑并终止于支撑冷板的附件，其被单独安装，例如通过从室主体铰接而易于移动。 然后，室的屋顶可以容易地与室主体分离并被更换。 在另外的模式中，可以容易地升高室顶，以便容易地进入处理室内的模块化部件。 暴露于腔室中的等离子体的所有组件都可以轻松访问和更换。 此外，由于释放闩锁并将冷板组件向上远离室体转动，因此提供了这种接入，而不需要断开连接器的使用或仪器，因为所有这些都需要进入屋顶的顶部 处理室或室内。 室顶冷却是通过弹簧夹紧的可分离连接来提供的，以提供保持夹紧接头两端的均匀热导率的高置信度。

Patent Agency Ranking