公开(公告)号：US08890096B2

公开(公告)日：2014-11-18

申请号：US13935853

申请日：2013-07-05

Applicant: Hitachi High-Technologies Corporation

Inventor： Wen Li ,  Hisafumi Imura ,  Hajime Kawano ,  Hiroyuki Takahashi

IPC: H01J37/304 ,  B82Y40/00 ,  H01J37/04 ,  H01J37/26

CPC classification number: H01J37/265 ,  H01J37/045 ,  H01J2237/0432 ,  H01J2237/2485 ,  H01J2237/28

Abstract: Technique capable of achieving shortening of settling time, which is caused by ringing, etc. of a blanking control signal is provided. A measuring/inspecting apparatus is configured to have a main blanking unit and a correction blanking control unit as a high-speed switching control unit of an electron beam. During the period of switching of a main blanking control signal from ON to OFF, a correction blanking control signal is applied in real time in synchronization with the switching. The ringing caused by the main blanking are corrected so as to be cancelled out by that, the settling time is shortened as a result.

Abstract translation: 提供了能够实现由消隐控制信号的振铃等引起的建立时间缩短的技术。 测量/检查装置被配置为具有作为电子束的高速切换控制单元的主消隐单元和校正消隐控制单元。 在将主消隐控制信号从ON切换到OFF的时段期间，与切换同步地实时地施加校正消隐控制信号。 由主消隐引起的振铃被校正，从而被抵消，因此结算时间缩短。

公开(公告)号：US08884225B2

公开(公告)日：2014-11-11

申请号：US13665623

申请日：2012-10-31

Applicant: Ebara Corporation

Inventor： Tsutomu Karimata ,  Tatsuya Kohama ,  Shoji Yoshikawa ,  Masahiro Hatakeyama

IPC: H01J37/28 ,  H01J37/26 ,  H01J37/073 ,  H01J37/12

CPC classification number: H01J37/261 ,  H01J37/073 ,  H01J37/12 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/036 ,  H01J2237/062 ,  H01J2237/06333 ,  H01J2237/1205 ,  H01J2237/1518 ,  H01J2237/186 ,  H01J2237/2443 ,  H01J2237/2817

Abstract: An electron beam inspection device observes a sample by irradiating the sample set on a stage with electron beams and detecting the electron beams from the sample. The electron beam inspection device has one electron column which irradiates the sample with the electron beams, and detects the electron beams from the sample. In this one electron column, a plurality of electron beam irradiation detecting systems are formed which each form electron beam paths in which the electron beams with which the sample is irradiated and the electron beams from the sample pass. The electron beam inspection device inspects the sample by simultaneously using a plurality of electron beam irradiation detecting systems and simultaneously irradiating the sample with the plurality of electron beams.

Abstract translation: 电子束检查装置通过用电子束照射载物台上的样品并检测来自样品的电子束来观察样品。 电子束检查装置具有一个电子管，用电子束照射样品，并检测来自样品的电子束。 在该一个电子柱中，形成多个电子束照射检测系统，每个电子束照射检测系统形成电子束路径，其中照射样品的电子束和来自样品的电子束通过。 电子束检查装置通过同时使用多个电子束照射检测系统来检查样品，同时用多个电子束照射样品。

公开(公告)号：US20140326877A1

公开(公告)日：2014-11-06

申请号：US14271298

申请日：2014-05-06

Applicant: FEI Company

Inventor： Brian Roberts Routh, JR.

IPC: H01J37/26 ,  G01T1/28 ,  H01J37/30

CPC classification number: H01J37/285 ,  G01T1/28 ,  H01J27/16 ,  H01J37/05 ,  H01J37/077 ,  H01J37/08 ,  H01J37/10 ,  H01J37/1471 ,  H01J37/265 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3056 ,  H01J2237/0817 ,  H01J2237/24415 ,  H01J2237/2445 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/31749

Abstract: A single column charged particle source with user selectable configurations operates in ion-mode for FIB operations or electron mode for SEM operations. Equipped with an x-ray detector, energy dispersive x-ray spectroscopy analysis is possible. A user can selectively configure the source to prepare a sample in the ion-mode or FIB mode then essentially flip a switch selecting electron-mode or SEM mode and analyze the sample using EDS or other types of analysis.

Abstract translation: 具有用户可选择配置的单列带电粒子源以离子模式进行FIB操作或SEM操作的电子模式。 配备了X射线检测器，可进行能量色散X射线光谱分析。 用户可以选择性地配置源以在离子模式或FIB模式下准备样品，然后基本上翻转开关选择电子模式或SEM模式，并使用EDS或其他类型的分析来分析样品。

公开(公告)号：US08841615B2

公开(公告)日：2014-09-23

申请号：US13637227

申请日：2011-02-22

Applicant: Nobuo Tanaka ,  Tsutomu Nakanishi ,  Yoshikazu Takeda ,  Hidefumi Asano ,  Koh Saitoh ,  Toru Ujihara ,  Makoto Kuwahara

Inventor： Nobuo Tanaka ,  Tsutomu Nakanishi ,  Yoshikazu Takeda ,  Hidefumi Asano ,  Koh Saitoh ,  Toru Ujihara ,  Makoto Kuwahara

IPC: H01J37/26 ,  H01J37/073

CPC classification number: H01J37/26 ,  H01J37/073 ,  H01J37/265 ,  H01J37/266 ,  H01J2237/06333 ,  H01J2237/06383 ,  H01J2237/24557

Abstract: An electron microscope which utilizes a polarized electron beam and can obtain a high contrast image of a sample is provided. The microscope includes: a laser; a polarization apparatus that polarizes a laser beam into a circularly polarized laser beam; a semiconductor photocathode that is provided with a strained superlattice semiconductor layer and generates a polarized electron beam when irradiated with the circularly polarized laser beam; a transmission electron microscope that utilizes the polarized electron beam; an electron beam intensity distribution recording apparatus arranged at a face reached by the polarized electron beam that has transmitted through the sample. An electron beam intensity distribution recording apparatus records an intensity distribution before and after the polarization of the electron beam is reversed, and a difference acquisition apparatus calculates a difference therebetween.

Abstract translation: 提供了利用偏振电子束并且可以获得样品的高对比度图像的电子显微镜。 显微镜包括：激光; 将激光束偏振成圆偏振激光束的偏振装置; 半导体光电阴极，其设置有应变超晶格半导体层，并且当被圆偏振激光束照射时产生偏振电子束; 利用偏振电子束的透射电子显微镜; 电子束强度分布记录装置，布置在透过样品的偏振电子束所达到的面上。 电子束强度分布记录装置记录电子束的偏振前后的强度分布，差分获取装置计算其间的差。

公开(公告)号：US08835844B2

公开(公告)日：2014-09-16

申请号：US12710679

申请日：2010-02-23

Applicant: Makoto Ezumi ,  Yoichi Ose ,  Akira Ikegami ,  Hideo Todokoro ,  Tatsuaki Ishijima ,  Takahiro Sato ,  Ritsuo Fukaya ,  Kazunari Asao

Inventor： Makoto Ezumi ,  Yoichi Ose ,  Akira Ikegami ,  Hideo Todokoro ,  Tatsuaki Ishijima ,  Takahiro Sato ,  Ritsuo Fukaya ,  Kazunari Asao

IPC: G01N23/04 ,  G01N23/225 ,  H01J37/28 ,  H01J37/244 ,  H01J37/21 ,  H01J37/26

CPC classification number: H01J37/265 ,  G01N23/2251 ,  H01J37/21 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/0041 ,  H01J2237/216 ,  H01J2237/244 ,  H01J2237/24564 ,  H01J2237/24592 ,  H01J2237/2594 ,  H01J2237/2817

Abstract: The present invention has the object of providing charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices. To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.

Abstract translation: 本发明的目的是提供一种理想的减少带电粒子束装置中的聚焦偏移，放大波动和测量长度误差的带电粒子束照射方法。 为了实现这些目的，在本发明中公开了一种用于在由装载机构加载的情况下用静电静电计测量样品上的电位分布的方法。 公开了另一种测量样品上特定点的局部电荷的方法，并且从这些局部静电电荷中分离和测量广域静电电荷量。 公开了另一种用于基于通过测量至少两个带电粒子光学条件下的指定点处的静电电荷量而发现的波动来校正测量长度值或放大倍率的方法，然后使用带电粒子束来测量测量尺寸的波动 由于在指定位置处的静电电荷的波动而发生。

公开(公告)号：US08835842B2

公开(公告)日：2014-09-16

申请号：US13746382

申请日：2013-01-22

Applicant: EDAX Inc.

Inventor： Stuart I. Wright ,  Matthew M. Nowell ,  Lisa H Chan ,  Peter A. de Kloe ,  Tera Lyn Nylese

IPC: H01J37/26 ,  G01T1/36 ,  H01J37/29 ,  H01J37/285 ,  G01N23/225

CPC classification number: H01J37/26 ,  G01N23/2251 ,  G01T1/36 ,  H01J37/265 ,  H01J37/285 ,  H01J37/29 ,  H01J2237/2505 ,  H01J2237/28

Abstract: Various embodiments of the present invention provide systems and methods for determining an characteristic of a material. The characteristics may include, but are not limited to, crystallographic and chemical composition characteristics of a material.

Abstract translation: 本发明的各种实施例提供用于确定材料特性的系统和方法。 特征可以包括但不限于材料的晶体学和化学组成特征。

公开(公告)号：US20140021350A1

公开(公告)日：2014-01-23

申请号：US13789346

申请日：2013-03-07

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroshi NISHIHAMA ,  Tatsuya MAEDA ,  Mitsuji IKEDA ,  Susumu KOYAMA

IPC: H01J37/26

CPC classification number: H01J37/26 ,  H01J37/263 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24578 ,  H01J2237/2809

Abstract: An object of the present invention is to provide a pattern measuring apparatus which performs high-accuracy concavity/convexity determination (e.g., distinguishing between a line segment and space) while simultaneously reducing the dose of a beam falling onto a pattern to be measured. To attain the object, this invention proposes a pattern measuring apparatus which specifies a pattern in a measurement object area by scanning a tilted bean with respect to another area different from the measurement object area and then performs measurement based on the pattern-specifying result. With such arrangement, it becomes possible to perform measurement without the risk of wrong pattern designation while lowering the dose of a beam hitting the measurement object area.

公开(公告)号：US08604430B2

公开(公告)日：2013-12-10

申请号：US13366874

申请日：2012-02-06

Applicant: Yuko Iwabuchi ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Hiroshi Toyama

Inventor： Yuko Iwabuchi ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Hiroshi Toyama

IPC: H01J37/28

CPC classification number: H01J37/28 ,  G01N23/20 ,  G01N23/2251 ,  G03F7/7065 ,  G06T7/001 ,  G06T2207/10056 ,  G06T2207/30148 ,  H01J37/04 ,  H01J37/20 ,  H01J37/265 ,  H01J2237/04756 ,  H01J2237/20221 ,  H01J2237/2444 ,  H01J2237/24592 ,  H01J2237/2817 ,  H01J2237/31766

Abstract: The inspection apparatus disclosed generates an electron beam, an acceleration electrode accelerates the electron beam, a convergence lens converges the electron beam, an electron beam deflector scans the beam over a sample, an objective lens converges the electron beam on the sample, a detector located between the sample and the objective lens detects charged particles emitted from the sample, a power supply applies a retarding voltage to the sample for decelerating the electron beam to the sample, an electrode is disposed between the objective lens and the sample, and a voltage is generated between the sample and the electrode by said electrode, the voltage being determined depending on the sample. The apparatus solves problems encountered in conventional inspection systems.

Abstract translation: 所公开的检查装置产生电子束，加速电极加速电子束，会聚透镜会聚电子束，电子束偏转器扫描样品上的光束，物镜会将电子束会聚在样品上，检测器位于 在样品和物镜之间检测从样品发射的带电粒子，电源向样品施加延迟电压以将电子束减速到样品，电极设置在物镜和样品之间，电压为 通过所述电极在样品和电极之间产生，电压根据样品确定。 该装置解决了常规检测系统遇到的问题。

公开(公告)号：US08552371B2

公开(公告)日：2013-10-08

申请号：US12917703

申请日：2010-11-02

Applicant: Shigeki Sukegawa ,  Shunsuke Koshihara ,  Kyoungmo Yang

Inventor： Shigeki Sukegawa ,  Shunsuke Koshihara ,  Kyoungmo Yang

IPC: G01N23/04

CPC classification number: H01J37/28 ,  H01J37/265 ,  H01J2237/221 ,  H01J2237/2817 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: There is provided a method for setting a suitable imaging magnification for each of a plurality of measurement places in a charged particle beam apparatus which images a semiconductor pattern.For a given measuring point coordinate, a line segment or a vertex representing a change in concavity and convexity near the measuring point coordinate is searched, and an imaging magnification is set so that coordinates on a sample corresponding to both ends which gives a length that serves as a reference falls in a field of view of the charged particle beam apparatus by letting a minimum distance be the reference, of distances between line segments representing a change in concavity and convexity from the measuring point coordinate or a distance between neighboring vertexes.

Abstract translation: 提供了一种用于为对半导体图案进行成像的带电粒子束装置中的多个测量位置中的每一个设置合适的成像倍率的方法。 对于给定的测量点坐标，搜索表示测量点坐标附近的凹凸的变化的线段或顶点，并且设置成像倍率，使得对应于给出服务的长度的两端的样本上的坐标 作为参考，通过使最小距离作为参考，在距离表示距离测量点坐标的凹凸变化的线段之间的距离或相邻顶点之间的距离处落在带电粒子束装置的视野中。

公开(公告)号：US20130234011A2

公开(公告)日：2013-09-12

申请号：US12655635

申请日：2010-01-04

Applicant: Harald Niebel ,  Giuseppe Pavia ,  Heiko Stegmann ,  Richard Schillinger

Inventor： Harald Niebel ,  Giuseppe Pavia ,  Heiko Stegmann ,  Richard Schillinger

IPC: H01J37/20 ,  H01J37/26 ,  G12B13/00

CPC classification number: H01J37/20 ,  H01J37/153 ,  H01J37/26 ,  H01J37/263 ,  H01J37/265 ,  H01J2237/1534 ,  H01J2237/201 ,  H01J2237/2826

Abstract: A method for adjusting an operating parameter of a particle beam device and a sample holder, which is suitable in particular for performing the method are provided. An adjustment of an operating parameter of a particle beam device is possible without transfer of the sample holder out of the particle beam device. A reference sample is placed in a first sample receptacle, so that in ongoing operation of the particle beam device, the sample holder need only be positioned in such a way that the reference sample is bombarded and measured with the aid of a particle beam generated in the particle beam device.

Abstract translation: 提供了一种用于调整特别用于执行该方法的粒子束装置和样品架的操作参数的方法。 在将粒子束装置的样品保持器转移出来之前，可以调整粒子束装置的操作参数。 将参考样品放置在第一样品容器中，使得在粒子束装置的持续操作中，样品保持器仅需要以使得参考样品被轰击和测量的方式定位，借助于在 粒子束装置。