Abstract:
In a method of detecting arc discharge in a glow-discharge apparatus GD that has a high-frequency power source PS, a cutting pulse is output for time T1 to the high-frequency power source PS to stop a supply of power to the glow-discharge apparatus GD, when dVr/dt−dVf/dt increases over a first level, where Vf and Vr are a traveling-wave voltage and a reflected-wave voltage applied to the glow-discharge apparatus GD, respectively. Arc discharge is determined to have developed in the glow-discharge apparatus, when Vr/Vf increases to a second level or a higher level within a preset time To after the supply of power to the glow-discharge apparatus is stopped.
Abstract:
A strongly-ionized plasma generator includes a chamber for confining a feed gas. An anode is positioned inside the chamber. A cathode assembly is positioned adjacent to the anode inside the chamber. An output of a pulsed power supply is electrically connected between the anode and the cathode assembly. The pulsed power supply comprising solid state switches that are controlled by micropulses generated by drivers. At least one of a pulse width and a duty cycle of the micropulses is varied so that the power supply generates a multi-step voltage waveform at the output having a low-power stage including a peak voltage and a rise time that is sufficient to generate a plasma from the feed gas and a transient stage including a peak voltage and a rise time that is sufficient to generate a more strongly-ionized plasma.
Abstract:
The present invention relates to a plasma generator to apply cold plasma in the fields of medicine, biology, ecological recovery, activation, purification, special processing of gases, liquids and solid substances as well as other areas of technology and science. A plasma generator of the invention comprises: a power source; an electronic oscillator constructed on an amplifying (control) element which is connected to a low voltage input section; a resonance transformer having a low voltage input section and a high voltage output section; and, one pin of the high voltage output section of the resonance transformer which is connected to a discharge electrode. The present invention provides a universal plasma generator with decreased mass and dimensions which provides unipolar plasma for plasma therapy and activation of substantial media by virtue of the field.
Abstract:
A multiple phase switch mode plasma processing system generates alternating signals which may be coincidentally rectified or otherwise converted from AC to DC. The resulting DC signal has extremely reduced ripple and thus greatly reduced need for filtering of the generated DC output. Direct connection of the DC output is possible through a coupling having no substantially no reactive component. In situations where filtering is desirable the filtering can be reduced to about 1% of the energy supplied per cycle. This allows more accurate control of the power supply to the processing plasma. In addition, voltage regulation through frequency variation, resonance, circuit variation, and pulse width modulation can be utilized individually or in combination. The phase relationship of the multiple alternating signals may be determined so as to allow a regular phase relationship and thus minimize the small amount of ripple remaining.
Abstract:
The invention relates to a bi-polar power supply for a plasma chamber including an adjustable DC power supply having a positive output terminal and a negative output terminal. A transistor bridge circuit having two input bridge terminals is coupled to the positive and negative output terminals. Two bridge output terminals of the transistor bridge are coupled to the plasma chamber. A current detector is coupled to the two bridge output terminals for detecting the current flowing to the plasma chamber and controlling the transistor bridge circuit to provide a bi-polar power supply to the plasma chamber.
Abstract:
In a plasma surface treating method, a sample to be treated is supported on a first electrode within a vacuum vessel and a second electrode is caused to confront the first electrode. Active species of negative ions are then generated by means of a direct current glow discharge produced in an abnormal glow discharge region and are subsequently impinged upon a surface of the sample to induce a chemical reaction with the sample.
Abstract:
For the glow discharge between a receptacle and a workpiece, the glow discharge path is connected in series with a first switch. A capacitor circuit is charged via the glow discharge path and two diodes. By closing a switch, the previously positive pole of the capacitor circuit is set to the zero potential, whereby the potential of the other pole is shifted negative. By closing a switch, the capacitor circuit is discharged through the glow discharge path while the first switch is closed. Upon the discharging of the capacitor circuit, the supply voltage continues to be present at the glow discharge path for the remaining pulse time. In the initial range, the voltage pulses have a pulse peak for ignition followed by a maintenance range, the height of which corresponds to the supply voltage.
Abstract:
Atomic layer etching of a substrate using a wafer scale wave of precisely controlled electrons is presented. A volume of gaseous plasma including diluent and reactive species and electrons of a uniform steady state composition is generated in a positive column of a DC plasma proximate the substrate. A corrosion layer is formed on the substrate by adsorption of the reactive species to atoms at the surface of the substrate. The substrate is positively biased to draw electrons from the volume to the surface of the substrate and impart an energy to the electrons so to stimulate electron transitions in the corrosion layer species, resulting in ejection of the corrosion layer species via electron stimulation desorption. The substrate is negatively biased to repel the electrons from the surface of the substrate back to the volume, followed by a zero bias to restore the steady state composition of the volume.
Abstract:
Atomic layer etching (ALE) of a substrate using a wafer scale wave of precisely controlled electrons is presented. A volume of gaseous plasma including diluent and reactive species and electrons of a uniform steady state composition is generated in a positive column of a DC plasma proximate the substrate. A corrosion layer is formed on the substrate by adsorption of the reactive species to atoms at the surface of the substrate. The substrate is positively biased to draw electrons from the volume to the surface of the substrate and impart energy to the electrons to stimulate electron transitions in the corrosion layer species, resulting in ejection of the corrosion layer species via electron stimulation desorption (ESD). The substrate is negatively biased to repel the electrons from the surface of the substrate back to the volume, followed by a zero bias to restore the steady state composition of the volume.
Abstract:
Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma chamber are respectively connected to an adjustable DC voltage source and a DC current source. The anode potential is adjusted to shift a surface floating potential of a stage in a positive column of the DC plasma to a reference ground potential of the DC voltage/current sources. A conductive plate in a same region of the positive column opposite the stage is used to measure the surface floating potential of the stage. A signal generator referenced to the ground potential is capacitively coupled to the stage to control a surface potential at the stage for provision of kinetic energy to free electrons in the DC plasma.