Method of detecting an arc in a glow-discharge device and apparatus for controlling a high-frequency arc discharge
    71.
    发明授权
    Method of detecting an arc in a glow-discharge device and apparatus for controlling a high-frequency arc discharge 有权
    在辉光放电装置中检测电弧的方法和用于控制高频电弧放电的装置

    公开(公告)号:US07301286B2

    公开(公告)日:2007-11-27

    申请号:US10802591

    申请日:2004-03-17

    Inventor: Noboru Kuriyama

    Abstract: In a method of detecting arc discharge in a glow-discharge apparatus GD that has a high-frequency power source PS, a cutting pulse is output for time T1 to the high-frequency power source PS to stop a supply of power to the glow-discharge apparatus GD, when dVr/dt−dVf/dt increases over a first level, where Vf and Vr are a traveling-wave voltage and a reflected-wave voltage applied to the glow-discharge apparatus GD, respectively. Arc discharge is determined to have developed in the glow-discharge apparatus, when Vr/Vf increases to a second level or a higher level within a preset time To after the supply of power to the glow-discharge apparatus is stopped.

    Abstract translation: 在具有高频电源PS的辉光放电装置GD中检测电弧放电的方法中,向高频电源PS输出时间T1的切断脉冲,停止向辉光放电装置供电, 放电装置GD,当dVr / dt-dVf / dt在第一电平上增加时,其中Vf和Vr分别是施加到辉光放电装置GD的行波电压和反射波电压。 在辉光放电装置的电力供给停止之后,当预定时间T0内Vr / Vf增加到第二电平或更高电平时,电弧放电被确定为在辉光放电装置中产生。

    METHODS AND APPARATUS FOR GENERATING STRONGLY-IONIZED PLASMAS WITH IONIZATIONAL INSTABILITIES
    72.
    发明申请
    METHODS AND APPARATUS FOR GENERATING STRONGLY-IONIZED PLASMAS WITH IONIZATIONAL INSTABILITIES 有权
    用于产生具有离子稳定性的强离子化等离子体的方法和装置

    公开(公告)号:US20070188104A1

    公开(公告)日:2007-08-16

    申请号:US11738491

    申请日:2007-04-22

    Abstract: A strongly-ionized plasma generator includes a chamber for confining a feed gas. An anode is positioned inside the chamber. A cathode assembly is positioned adjacent to the anode inside the chamber. An output of a pulsed power supply is electrically connected between the anode and the cathode assembly. The pulsed power supply comprising solid state switches that are controlled by micropulses generated by drivers. At least one of a pulse width and a duty cycle of the micropulses is varied so that the power supply generates a multi-step voltage waveform at the output having a low-power stage including a peak voltage and a rise time that is sufficient to generate a plasma from the feed gas and a transient stage including a peak voltage and a rise time that is sufficient to generate a more strongly-ionized plasma.

    Abstract translation: 强离子化等离子体发生器包括用于限制进料气体的室。 阳极位于室内。 阴极组件邻近室内的阳极定位。 脉冲电源的输出电连接在阳极和阴极组件之间。 脉冲电源包括由驱动器产生的微脉冲控制的固态开关。 微脉冲的脉冲宽度和占空比中的至少一个被改变,使得电源在具有包括峰值电压和足够产生的峰值电压和上升时间的低功率级的输出端产生多级电压波形 来自进料气体的等离子体和包括足以产生更强电离等离子体的峰值电压和上升时间的瞬态级。

    Plasma generator for generating unipolar plasma
    73.
    发明授权
    Plasma generator for generating unipolar plasma 失效
    用于产生单极等离子体的等离子体发生器

    公开(公告)号:US5909086A

    公开(公告)日:1999-06-01

    申请号:US719057

    申请日:1996-09-24

    Abstract: The present invention relates to a plasma generator to apply cold plasma in the fields of medicine, biology, ecological recovery, activation, purification, special processing of gases, liquids and solid substances as well as other areas of technology and science. A plasma generator of the invention comprises: a power source; an electronic oscillator constructed on an amplifying (control) element which is connected to a low voltage input section; a resonance transformer having a low voltage input section and a high voltage output section; and, one pin of the high voltage output section of the resonance transformer which is connected to a discharge electrode. The present invention provides a universal plasma generator with decreased mass and dimensions which provides unipolar plasma for plasma therapy and activation of substantial media by virtue of the field.

    Abstract translation: 本发明涉及一种在医药,生物学,生态恢复,活化,纯化,气体,液体和固体物质的特殊处理以及其他技术和科学领域应用冷等离子体的等离子体发生器。 本发明的等离子体发生器包括:电源; 构造在连接到低电压输入部分的放大(控制)元件上的电子振荡器; 具有低电压输入部分和高压输出部分的谐振变压器; 以及连接到放电电极的谐振变压器的高压输出部分的一个引脚。 本发明提供了具有减小的质量和尺寸的通用等离子体发生器,其提供用于等离子体处理的单极等离子体,并且借助该领域激活大量介质。

    Multi-phase DC plasma processing system
    74.
    发明授权
    Multi-phase DC plasma processing system 失效
    多相直流等离子体处理系统

    公开(公告)号:US5535906A

    公开(公告)日:1996-07-16

    申请号:US380621

    申请日:1995-01-30

    Abstract: A multiple phase switch mode plasma processing system generates alternating signals which may be coincidentally rectified or otherwise converted from AC to DC. The resulting DC signal has extremely reduced ripple and thus greatly reduced need for filtering of the generated DC output. Direct connection of the DC output is possible through a coupling having no substantially no reactive component. In situations where filtering is desirable the filtering can be reduced to about 1% of the energy supplied per cycle. This allows more accurate control of the power supply to the processing plasma. In addition, voltage regulation through frequency variation, resonance, circuit variation, and pulse width modulation can be utilized individually or in combination. The phase relationship of the multiple alternating signals may be determined so as to allow a regular phase relationship and thus minimize the small amount of ripple remaining.

    Abstract translation: 多相开关模式等离子体处理系统产生可以被巧妙地整流或以其他方式从AC转换成DC的交流信号。 所产生的DC信号具有非常小的纹波,因此大大降低了对产生的DC输出的滤波的需要。 直流输出的直接连接可以通过基本上没有无功分量的耦合来实现。 在需要滤波的情况下,滤波可以减少到每个周期提供的能量的约1%。 这允许更精确地控制对处理等离子体的电源。 此外,可以单独地或组合地使用通过频率变化,谐振,电路变化和脉冲宽度调制的电压调节。 可以确定多个交替信号的相位关系,以便允许规则的相位关系,从而最小化剩余的少量波动。

    Low frequency, pulsed, bipolar power supply for a plasma chamber
    75.
    发明授权
    Low frequency, pulsed, bipolar power supply for a plasma chamber 失效
    用于等离子体室的低频,脉冲,双极电源

    公开(公告)号:US5303139A

    公开(公告)日:1994-04-12

    申请号:US922159

    申请日:1992-07-30

    Applicant: Gunter Mark

    Inventor: Gunter Mark

    Abstract: The invention relates to a bi-polar power supply for a plasma chamber including an adjustable DC power supply having a positive output terminal and a negative output terminal. A transistor bridge circuit having two input bridge terminals is coupled to the positive and negative output terminals. Two bridge output terminals of the transistor bridge are coupled to the plasma chamber. A current detector is coupled to the two bridge output terminals for detecting the current flowing to the plasma chamber and controlling the transistor bridge circuit to provide a bi-polar power supply to the plasma chamber.

    Abstract translation: 本发明涉及一种用于等离子体室的双极性电源,其包括具有正输出端和负输出端的可调直流电源。 具有两个输入电桥端子的晶体管桥接电路耦合到正输出端和负输出端。 晶体管桥的两个桥输出端耦合到等离子体室。 电流检测器耦合到两个桥输出端,用于检测流到等离子体室的电流,并且控制晶体管桥接电路以向等离子体室提供双极电源。

    Process and apparatus for the surface treatment of workpieces by glow
discharge
    77.
    发明授权
    Process and apparatus for the surface treatment of workpieces by glow discharge 失效
    通过辉光放电对工件进行表面处理的工艺和设备

    公开(公告)号:US4645981A

    公开(公告)日:1987-02-24

    申请号:US620919

    申请日:1984-06-15

    Abstract: For the glow discharge between a receptacle and a workpiece, the glow discharge path is connected in series with a first switch. A capacitor circuit is charged via the glow discharge path and two diodes. By closing a switch, the previously positive pole of the capacitor circuit is set to the zero potential, whereby the potential of the other pole is shifted negative. By closing a switch, the capacitor circuit is discharged through the glow discharge path while the first switch is closed. Upon the discharging of the capacitor circuit, the supply voltage continues to be present at the glow discharge path for the remaining pulse time. In the initial range, the voltage pulses have a pulse peak for ignition followed by a maintenance range, the height of which corresponds to the supply voltage.

    Abstract translation: 对于容器和工件之间的辉光放电,辉光放电路径与第一开关串联连接。 通过辉光放电路径和两个二极管对电容器电路进行充电。 通过闭合开关,电容器电路的先前正极被设置为零电位,由此另一极的电位偏移为负。 通过闭合开关,电容器电路在第一开关闭合时通过辉光放电路径放电。 在电容器电路放电时,在剩余脉冲时间内,辉光放电路径上继续存在电源电压。 在初始范围内,电压脉冲具有点火脉冲峰值,后跟维护范围,其高度对应于电源电压。

    ATOMIC LAYER ETCHING BY ELECTRON WAVEFRONT
    78.
    发明公开

    公开(公告)号:US20240249913A1

    公开(公告)日:2024-07-25

    申请号:US18435576

    申请日:2024-02-07

    Applicant: VELVETCH LLC

    Abstract: Atomic layer etching of a substrate using a wafer scale wave of precisely controlled electrons is presented. A volume of gaseous plasma including diluent and reactive species and electrons of a uniform steady state composition is generated in a positive column of a DC plasma proximate the substrate. A corrosion layer is formed on the substrate by adsorption of the reactive species to atoms at the surface of the substrate. The substrate is positively biased to draw electrons from the volume to the surface of the substrate and impart an energy to the electrons so to stimulate electron transitions in the corrosion layer species, resulting in ejection of the corrosion layer species via electron stimulation desorption. The substrate is negatively biased to repel the electrons from the surface of the substrate back to the volume, followed by a zero bias to restore the steady state composition of the volume.

    Atomic layer etching by electron wavefront

    公开(公告)号:US11942306B1

    公开(公告)日:2024-03-26

    申请号:US18474114

    申请日:2023-09-25

    Applicant: VELVETCH LLC

    Abstract: Atomic layer etching (ALE) of a substrate using a wafer scale wave of precisely controlled electrons is presented. A volume of gaseous plasma including diluent and reactive species and electrons of a uniform steady state composition is generated in a positive column of a DC plasma proximate the substrate. A corrosion layer is formed on the substrate by adsorption of the reactive species to atoms at the surface of the substrate. The substrate is positively biased to draw electrons from the volume to the surface of the substrate and impart energy to the electrons to stimulate electron transitions in the corrosion layer species, resulting in ejection of the corrosion layer species via electron stimulation desorption (ESD). The substrate is negatively biased to repel the electrons from the surface of the substrate back to the volume, followed by a zero bias to restore the steady state composition of the volume.

    DC plasma control for electron enhanced material processing

    公开(公告)号:US11676797B2

    公开(公告)日:2023-06-13

    申请号:US17946434

    申请日:2022-09-16

    Applicant: VELVETCH LLC

    CPC classification number: H01J37/32027 H01J37/32045 H01J37/32596

    Abstract: Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma chamber are respectively connected to an adjustable DC voltage source and a DC current source. The anode potential is adjusted to shift a surface floating potential of a stage in a positive column of the DC plasma to a reference ground potential of the DC voltage/current sources. A conductive plate in a same region of the positive column opposite the stage is used to measure the surface floating potential of the stage. A signal generator referenced to the ground potential is capacitively coupled to the stage to control a surface potential at the stage for provision of kinetic energy to free electrons in the DC plasma.

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