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公开(公告)号：US11314162B2
公开(公告)日：2022-04-26
申请号：US16492904
申请日：2018-02-28
Applicant: HOYA CORPORATION
Inventor： Kazutake Taniguchi , Hiroaki Shishido
Abstract: Provided is a mask blank in which a light shielding film which is a single layer film formed of a silicon nitride-based material has high light shielding performance against ArF exposure light and is capable of reducing EMF bias of a pattern of the light shielding film. The mask blank includes the light shielding film on a transparent substrate. The light shielding film has an optical density of 3.0 or greater to ArF exposure light. A refractive index n and an extinction coefficient k of the light shielding film to ArF exposure light simultaneously satisfy relationships defined by Formulas (1) and (2) below. n≤0.0733×k2+0.4069×k+1.0083 Formula (1) n≥29.316×k2−92.292×k+72.671 Formula (2)
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公开(公告)号：US11281090B2
公开(公告)日：2022-03-22
申请号：US16754306
申请日：2018-10-16
Applicant: HOYA CORPORATION
Inventor： Kazuhiro Hamamoto , Tsutomu Shoki , Yohei Ikebe
Abstract: A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate, a multilayer reflective film that reflects EUV light formed on the substrate, and a protective film formed on the multilayer reflective film. Reference marks are formed to a concave shape on the surface of the protective film. A surface layer of the reference marks contains an element that is the same as at least one of the elements contained in the protective film. A shrink region, where at least a portion of the plurality of films contained in the multilayer reflective film are shrunk, is formed at the bottom of the reference marks.
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公开(公告)号：US11262647B2
公开(公告)日：2022-03-01
申请号：US16756727
申请日：2018-10-16
Applicant: HOYA CORPORATION
Inventor： Kazuhiro Hamamoto , Tsutomu Shoki
Abstract: A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device that can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate and a multilayer reflective film that reflects EUV light formed on the substrate. Reference marks are formed to a concave shape on the surface of the substrate with the multilayer reflective film. The reference marks have grooves or protrusions roughly in the center. The shape of the grooves or protrusions when viewed from overhead is similar or roughly similar to the shape of the reference marks.
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公开(公告)号：US11238895B2
公开(公告)日：2022-02-01
申请号：US17111068
申请日：2020-12-03
Applicant: HOYA CORPORATION
Inventor： Masao Takano
IPC: G11B17/028 , G11B17/038 , G11B25/04
Abstract: A ring-shaped spacer is to be arranged in contact with a magnetic disk in a hard disk drive apparatus. A maximum height surface roughness Rz of an outer circumferential edge surface of the spacer is at least 1.5 μm, and the spacer is made of amorphous glass.
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公开(公告)号：US20220022732A1
公开(公告)日：2022-01-27
申请号：US17284223
申请日：2019-10-25
Applicant: HOYA CORPORATION
Inventor： Anh Minh DO
Abstract: The invention relates to an endoscope control device including a control body holder, a joystick-like control element for effecting a deflection movement, and at least one control wire guided through the control body holder and transmitting the deflection movement of the control element to an element to be controlled in the endoscope. The control element extends from the control body holder in a proximal direction. The at least one control wire is fixed to the control element in a manner spaced from the control body holder. The control element includes an elastic rod element which is bendable upon actuation of the control element so as to effect a deflection movement.
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Patent Agency Ranking
86.发明授权公开(公告)号：US11231645B2
公开(公告)日：2022-01-25
申请号：US16282699
申请日：2019-02-22
Applicant: HOYA CORPORATION
Inventor： Hiroaki Shishido , Osamu Nozawa
IPC: G03F1/32 , G03F1/80 , G03F1/58 , H01L21/324 , H01L21/00
Abstract: A mask blank, which is capable of being formed with high transfer accuracy when a hard mask film pattern is used as a mask, and even when the mask blank includes a chromium-based light shielding film. A light-semitransmissive film, a light shielding film, and a hard mask film are laminated in the stated order on a transparent substrate. The light-semitransmissive film contains silicon, and the hard mask film contains any one or both of silicon and tantalum. The light shielding film has a laminate structure of a lower layer and an upper layer, and contains chromium. The upper layer has a content of chromium of 65 at % or more, and a content of oxygen of less than 20 at %, and the lower layer has a content of chromium of less than 60 at %, and a content of oxygen of 20 at % or more.
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公开(公告)号：US20210407544A1
公开(公告)日：2021-12-30
申请号：US17472567
申请日：2021-09-10
Applicant: HOYA CORPORATION
Inventor： Kinobu OSAKABE
IPC: G11B5/73
Abstract: A substrate for a magnetic disk includes a substrate main body having two main surfaces and an outer circumferential edge surface that has a side wall surface and chamfered surfaces, and a film that is an alloy film containing Ni and P and provided on a surface of the substrate main body. A disk shape of the substrate main body has an outer diameter of 90 mm or more. A thickness T of the substrate that includes the film provided on the main surfaces is 0.520 mm or less. A total thickness D mm of the film on the main surfaces and the thickness T mm satisfy D≥0.0082/T−0.0015. A film thickness of the film on the outer circumferential edge surface is larger than a film thickness of the film on the main surfaces, and is 150% or less of the film thickness of the film on the main surfaces.
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公开(公告)号：US11187972B2
公开(公告)日：2021-11-30
申请号：US16343505
申请日：2017-10-18
Applicant: HOYA CORPORATION
Inventor： Yohei Ikebe , Tsutomu Shoki
Abstract: The present invention provides a reflective mask blank and reflective mask capable of reducing the shadowing effect of EUV lithography and forming a fine pattern. As a result, a semiconductor device can be more stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film, an absorber film and an etching mask film on a substrate in that order, wherein the absorber film is made of a material containing nickel (Ni), and the etching mask film is made of a material containing chromium (Cr) or a material containing silicon (Si).
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公开(公告)号：US20210364909A1
公开(公告)日：2021-11-25
申请号：US16755117
申请日：2018-11-20
Applicant: HOYA CORPORATION
Inventor： Osamu NOZAWA , Yasutaka HORIGOME , Hitoshi MAEDA
IPC: G03F1/32 , H01L21/033
Abstract: Provided is a mask blank including a phase shift film. The phase shift film is made of a material containing a non-metallic element and silicon and includes first, second, and third layers; refractive indexes n1, n2, and n3 of the first, second, and third layers, respectively, at the wavelength of an exposure light satisfy the relations of n1 n3; and extinction coefficients k1, k2, and k3 of the first, second, and third layers, respectively, at the wavelength of an exposure light satisfy the relation of k1>k2>k3.
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90.发明授权公开(公告)号：US11119400B2
公开(公告)日：2021-09-14
申请号：US16603127
申请日：2018-04-02
Applicant: HOYA CORPORATION
Inventor： Ryo Ohkubo , Hiroaki Shishido , Takashi Uchida
IPC: G03F1/32
Abstract: In the present disclosure, an etching stopper film, a light shielding film comprising a material containing one or more elements selected from silicon and tantalum, and a hard mask film are laminated in that order on a transparent substrate. The etching stopper film is made of a material containing chromium, oxygen and carbon, the chromium content is 50 atomic % or more, the maximum peak in N1s narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy is below the detection limit, and Cr2p narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy has a maximum peak at a binding energy of 574 eV or less.
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