公开(公告)号：US09683287B2

公开(公告)日：2017-06-20

申请号：US14058406

申请日：2013-10-21

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Srinivas Gandikota ,  Xinliang Lu ,  Wei Tang ,  Jing Zhou ,  Seshadri Ganguli ,  Jeffrey W. Anthis ,  Atif Noori ,  Faruk Gungor ,  Dien-Yeh Wu ,  Mei Chang ,  Shih Chung Chen

IPC: C23C16/12 ,  C23C16/30 ,  C23C16/455

CPC classification number: C23C16/30 ,  C23C16/45531 ,  C23C16/45534

Abstract: Films comprising Aluminum, carbon and a metal, wherein the aluminum is present in an amount greater than about 16% by elemental content and the film has less than about 50% carbon. Methods of forming the films comprise exposing a substrate to a metal halide precursor, purging the metal halide precursor from the processing chamber and then exposing the substrate to an alkyl aluminum precursor and an alane precursor, either sequentially or simultaneously. The alane precrursor comprises an amine-alane and a stabilizing amine selected from one or more of diemthylcyclohexylamine or dicyclomethylhexylamine.

公开(公告)号：US20170170009A1

公开(公告)日：2017-06-15

申请号：US15374438

申请日：2016-12-09

Applicant: Applied Materials, Inc.

Inventor： Keiichi Tanaka ,  Andrew Short ,  Mandyam Sriram ,  Srinivas Gandikota

IPC: H01L21/02 ,  C23C16/50 ,  H01L21/762 ,  C23C16/455

CPC classification number: H01L21/02164 ,  C23C16/045 ,  C23C16/45527 ,  C23C16/50 ,  C23C16/56 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/76224

Abstract: Methods for filling the gap of a semiconductor feature comprising exposure of a substrate surface to a precursor and reactant and an anneal environment to decrease the wet etch rate ratio of the deposited film and fill the gap.

公开(公告)号：US20150194298A1

公开(公告)日：2015-07-09

申请号：US14587131

申请日：2014-12-31

Applicant: Applied Materials, Inc.

Inventor： Yu Lei ,  Srinivas Gandikota ,  Seshadri Ganguli ,  Bo Zheng ,  Rajkumar Jakkaraju ,  Martin Jeff Salinas ,  Benjamin Schmiege

IPC: H01L21/02 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/3205

CPC classification number: H01L21/0228 ,  C23C16/45551 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02194 ,  H01L21/28562 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32051 ,  H01L21/32136

Abstract: Provided are atomic layer deposition methods to deposit a film using a circular batch processing chamber with a plurality of sections separated by gas curtains so that each section independently has a process condition.

Abstract translation: 提供了使用具有由气帘分开的多个部分的圆形间歇处理室沉积膜的原子层沉积方法，使得每个部分独立地具有工艺条件。

公开(公告)号：US08927059B2

公开(公告)日：2015-01-06

申请号：US13669571

申请日：2012-11-06

Applicant: Applied Materials, Inc.

Inventor： Xinliang Lu ,  David Thompson ,  Jeffrey W. Anthis ,  Mei Chang ,  Seshadri Ganguli ,  Wei Tang ,  Srinivas Gandikota ,  Atif Noori

IPC: C23C16/06 ,  C23C16/08 ,  C23C16/10 ,  C23C16/22 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768

CPC classification number: C23C16/455 ,  C23C16/06 ,  C23C16/45525 ,  H01L21/28562 ,  H01L21/76841

Abstract: Methods of depositing pure metal and aluminum alloy metal films. Certain methods comprises contacting a substrate surface with first and second precursors, the first precursor comprising an aluminum precursor selected from dimethylaluminum hydride, alane coordinated to an amine, and a compound having a structure represented by: wherein R is a C1-C6 alkyl group, and the second precursor comprising a metal halide. Other methods relate to sequentially exposing a substrate to a first and second precursor, the first precursor comprising an aluminum precursor as described above, and the second precursor comprising Ti(NR′2)4 or Ta(NR′2)5, wherein R′ is an alkyl, alkenyl, alkynyl, keto or aldehyde group.

Abstract translation: 沉积纯金属和铝合金金属膜的方法。 某些方法包括使基材表面与第一和第二前体接触，第一前体包含选自二甲基氢化铝，与胺配位的烷烃的铝前驱物和具有下列结构的化合物：其中R是C1-C6烷基， 并且第二前体包含金属卤化物。 其它方法涉及将衬底顺序地暴露于第一和第二前体，第一前体包含如上所述的铝前体，第二前体包含Ti（NR'2）4或Ta（NR'2）5，其中R' 是烷基，烯基，炔基，酮基或醛基。

公开(公告)号：US20250126867A1

公开(公告)日：2025-04-17

申请号：US18379928

申请日：2023-10-13

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Yixiong Yang ,  Seshadri Ganguli ,  Geetika Bajaj ,  Debaditya Chatterjee ,  Hsin-Jung Yu ,  Tuerxun Ailihumaer ,  Tengzhou Ma ,  Lin Sun

IPC: H01L29/40 ,  H01L21/324 ,  H01L29/49 ,  H01L29/51

Abstract: Methods of scaling the thickness of the interfacial layer in electronic devices, such as NMOS transistors and PMOS transistors are described. Some embodiments provide a metal film or a metal nitride film that reduces the thickness of the interfacial layer by scavenging unbound oxygen from the interfacial layer (e.g., silicon oxide (SiOx)) and the high-κ dielectric layer (e.g., hafnium oxide (HfOx)). Some embodiments advantageously include annealing the semiconductor substrate to promote or accelerate the scavenging.

公开(公告)号：US20240360557A1

公开(公告)日：2024-10-31

申请号：US18139121

申请日：2023-04-25

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Yixiong Yang ,  Tianyi Huang ,  Geetika Bajaj ,  Hsin-Jung Yu ,  Tengzhou Ma ,  Seshadri Ganguli ,  Tuerxun Ailihumaer ,  Yogesh Sharma ,  Debaditya Chatterjee

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/18

CPC classification number: C23C16/45553 ,  C23C16/08 ,  C23C16/18

Abstract: Methods for depositing metal films using a metal halide and metal organic precursors are described. The substrate is exposed to a first metal precursor and a second metal precursor to form the metal film. The exposures can be sequential or simultaneous. The metal films are relatively pure with a low carbon content.

公开(公告)号：US12114488B2

公开(公告)日：2024-10-08

申请号：US17308577

申请日：2021-05-05

Applicant: Applied Materials, Inc.

Inventor： Yong Yang ,  Kunal Bhatnagar ,  Srinivas Gandikota ,  Seshadri Ganguli ,  Jose Alexandro Romero ,  Mandyam Sriram ,  Mohith Verghese ,  Jacqueline S. Wrench ,  Yixiong Yang

IPC: H10B12/00 ,  C23C16/42 ,  C23C16/455

CPC classification number: H10B12/488 ,  C23C16/42 ,  C23C16/45527 ,  C23C16/45553

Abstract: Methods of forming memory devices are described. A molybdenum silicide nucleation layer is formed, and the substrate is soaked in a titanium precursor prior to a bulk molybdenum gap fill process. In other embodiments, a molybdenum silicide film is formed in a first process cycle and a second process cycle is performed where the substrate is exposed to a titanium precursor. In further embodiments, a substrate having at least one feature thereon is exposed to a first titanium precursor and a nitrogen-containing reactant. The substrate is then soaked in a second titanium precursor, and then is exposed to a first molybdenum precursor followed by exposure to a silane to form a molybdenum silicide layer on a surface of the substrate.

公开(公告)号：US12022650B2

公开(公告)日：2024-06-25

申请号：US18149226

申请日：2023-01-03

Applicant: Applied Materials, Inc.

Inventor： Yixiong Yang ,  Jacqueline S. Wrench ,  Yong Yang ,  Srinivas Gandikota ,  Annamalai Lakshmanan ,  Joung Joo Lee ,  Feihu Wang ,  Seshadri Ganguli

IPC: H10B12/00 ,  C23C16/455 ,  H01L21/02 ,  H01L21/285 ,  H01L21/8234

CPC classification number: H10B12/488 ,  C23C16/45553 ,  H01L21/02491 ,  H01L21/02631 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/823431 ,  H01L21/823475

Abstract: Methods for DRAM device with a buried word line are described. The method includes forming a metal cap layer and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.

公开(公告)号：US20240170254A1

公开(公告)日：2024-05-23

申请号：US17991379

申请日：2022-11-21

Applicant: Applied Materials, Inc.

Inventor： Jianming Fu ,  Tza-Jing Gung ,  Sanjeev Baluja ,  Haitao Wang ,  Mandyam Sriram ,  Srinivas Gandikota ,  Steven V. Sansoni

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/509

CPC classification number: H01J37/3211 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/509 ,  H01J37/32715 ,  H01J2237/332

Abstract: Embodiments of the disclosure are directed to PEALD batch processing chambers. Some embodiments are directed to processing chambers having one or more inductively coupled plasma (ICP) coils electrically connected to at least one RF power source. Some embodiments are directed to processing chambers having a wafer cassette comprising a plurality of platforms, each platform configured to support at least one wafer for processing, and one or more RF power sources electrically connected to the plurality of platforms in the wafer cassette. In some embodiments, the plurality of platforms have a first set of electrodes having a first polarity and a second set of electrodes having a second polarity, and one or more RF power sources electrically connected to the plurality of platforms in the wafer cassette.

公开(公告)号：US20240102157A1

公开(公告)日：2024-03-28

申请号：US17950946

申请日：2022-09-22

Applicant: Applied Materials, Inc.

Inventor： TUERXUN AILIHUMAER ,  Srinivas Gandikota ,  Yixiong Yang ,  Yogesh Sharma ,  Ashutosh Agarwal ,  Mandyam Sriram

IPC: C23C16/08 ,  C23C16/455 ,  H01L21/285

CPC classification number: C23C16/08 ,  C23C16/45538 ,  C23C16/45553 ,  H01L21/28556 ,  H01L2924/01042

Abstract: Embodiments of the disclosure are directed to methods of depositing a molybdenum film directly on a substrate surface (e.g., a low-K dielectric material) by exposing the substrate surface to a molybdenum-containing precursor and a plasma at a temperature of less than or equal to 400° C. The molybdenum-containing precursor comprises one or more of molybdenum pentachloride (MoCl5), molybdenum dioxide dichloride (MoO2Cl2), molybdenum oxytetrachloride (MoOCl4), molybdenum hexacarbonyl, bis(tert-butylimido)-bis(dimethylamido)molybdenum, or bis(ethylbenzene) molybdenum. The plasma comprises one or more of hydrogen (H2), nitrogen (N2), or a silane (SixHy). In some embodiments, when the molybdenum-containing precursor comprises molybdenum hexafluoride (MoF6), the plasma does not include hydrogen (H2).