公开(公告)号：US20140027868A1

公开(公告)日：2014-01-30

申请号：US14110716

申请日：2011-04-21

Applicant: Kisho Ashida ,  Hiroyuki Ota

Inventor： Kisho Ashida ,  Hiroyuki Ota

IPC: H01L29/84

CPC classification number: H01L29/84 ,  G01B7/16 ,  G01L1/18 ,  G01L1/26 ,  G01L19/147

Abstract: In a mechanical quantity measuring device (1) having a sensor chip (2) which outputs a sense output (S) corresponding to a mechanical quantity acting on the object to be measured (4), and a flexible wiring board (3) which supports the sensor chip (2) and has a wire (6) to lead out the sense output (S) to outside, and in which in measuring the mechanical quantity, the sensor chip (2) and the flexible wiring board (3) are attached to the object to be measured (4), a cutout (5) is provided on the flexible wiring board (3) near the sensor chip (2) and on the side where the wire (6) is arranged for the sensor chip (2). Thus, change in the sense output (S) with time can be restrained.

Abstract translation: 在具有传感器芯片（2）的机械量测量装置（1）中，所述传感器芯片（2）输出对应于作用在待测物体（4）上的机械量的感测输出（S），以及柔性布线板（3） 传感器芯片（2），并且具有将感测输出（S）导出到外部的导线（6），并且在测量机械量时传感器芯片（2）和柔性布线板（3）被附接 在传感器芯片（2）附近的柔性布线基板（3）上设置切口（5），并且在布线传感器芯片（2）的一侧设置切口（5） ）。 因此，可以抑制感测输出（S）随时间的变化。

公开(公告)号：US08367560B2

公开(公告)日：2013-02-05

申请号：US12155773

申请日：2008-06-10

Applicant: Arito Ogawa ,  Kunihiko Iwamoto ,  Hiroyuki Ota

Inventor： Arito Ogawa ,  Kunihiko Iwamoto ,  Hiroyuki Ota

IPC: H01L21/31 ,  H01L21/469 ,  B05C11/00 ,  B05C13/00 ,  B05C13/02

CPC classification number: H01L21/0228 ,  C23C16/40 ,  C23C16/45527 ,  C23C16/481 ,  C23C16/54 ,  H01L21/02148 ,  H01L21/02181 ,  H01L21/28194 ,  H01L21/3105 ,  H01L21/3141 ,  H01L21/67207 ,  H01L29/4975 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device manufacturing method includes the steps of forming a silicate film by performing a first step of forming a metal oxide film on a silicon substrate, and a second step of inducing a solid phase reaction between the metal oxide film and a surface of the silicon substrate by heat treatment, and forming a high dielectric constant insulating film on the silicate film.

Abstract translation: 半导体器件制造方法包括以下步骤：通过在硅衬底上形成金属氧化物膜的第一步骤形成硅酸盐膜，以及在金属氧化物膜和硅表面之间引起固相反应的第二步骤 通过热处理，在硅酸盐膜上形成高介电常数绝缘膜。

公开(公告)号：US08164856B2

公开(公告)日：2012-04-24

申请号：US12279169

申请日：2007-02-09

Applicant: Hiroyuki Ota ,  Yukihiro Hata ,  Junichiro Saikai ,  Sadamu Kuse

Inventor： Hiroyuki Ota ,  Yukihiro Hata ,  Junichiro Saikai ,  Sadamu Kuse

IPC: G11B15/60

CPC classification number: G11B15/602

Abstract: A magnetic tape apparatus includes a feeding unit for feeding a magnetic tape; a take-up unit for taking up the magnetic tape, a magnetic head disposed the downstream of the feeding unit and the upstream of the winding unit, in a traveling path of the magnetic tape from the feeding unit to the take-up unit, and having the moving magnetic tape abut to the magnetic head; a fixed guide unit disposed adjacent to the magnetic head at least in the upstream on downstream of the traveling direction of the magnetic tape traveling on the traveling path toward the magnetic head and guiding the magnetic tape to the traveling path by abutting to the magnetic tape; and a controlling unit disposed on the fixed guide unit for controlling the movement of the magnetic tape in the tape width direction. On a contact surface which abuts on the magnetic tape in the fixed guide unit, there is provided a space for excluding the air lying between the moving magnetic tape and the contact surface.

Abstract translation: 磁带装置包括用于馈送磁带的馈送单元; 用于卷取磁带的卷取单元，在进给单元到卷取单元的磁带的行进路径中设置在进给单元的下游和卷绕单元的上游的磁头，以及 使移动的磁带与磁头相邻; 固定引导单元，至少在行进路径上朝向磁头行进的磁带的行进方向的下游的上游侧，与磁头相邻配置，并通过与磁带抵接而将磁带引导到行进路径; 以及控制单元，其设置在固定引导单元上，用于控制磁带在带宽度方向上的移动。 在与固定导向单元中的磁带抵接的接触表面上设置有用于排除位于移动磁带和接触表面之间的空气的空间。

公开(公告)号：US20080318442A1

公开(公告)日：2008-12-25

申请号：US12155773

申请日：2008-06-10

Applicant: Arito Ogawa ,  Kunihiko Iwamoto ,  Hiroyuki Ota

Inventor： Arito Ogawa ,  Kunihiko Iwamoto ,  Hiroyuki Ota

IPC: H01L21/469 ,  B05C11/00

CPC classification number: H01L21/0228 ,  C23C16/40 ,  C23C16/45527 ,  C23C16/481 ,  C23C16/54 ,  H01L21/02148 ,  H01L21/02181 ,  H01L21/28194 ,  H01L21/3105 ,  H01L21/3141 ,  H01L21/67207 ,  H01L29/4975 ,  H01L29/513 ,  H01L29/517

Abstract: The present invention has an object of providing a substrate processing apparatus and a semiconductor device manufacturing method that can prevent adverse effects on electrical characteristics and provide a thinner EOT.A semiconductor device manufacturing method comprises the steps of: forming a metal oxide film on a silicon substrate, and forming a silicate film by inducing a solid phase reaction between the metal oxide film and the silicon substrate by heat treatment, and forming a high dielectric constant insulating film on the silicate film.

Abstract translation: 本发明的目的是提供一种可以防止对电气特性的不利影响并提供更薄的EOT的衬底处理装置和半导体器件制造方法。 半导体器件制造方法包括以下步骤：在硅衬底上形成金属氧化物膜，并通过热处理在金属氧化物膜和硅衬底之间引起固相反应形成硅酸盐膜，并形成高介电常数 硅酸盐膜上的绝缘膜。

公开(公告)号：US07399649B2

公开(公告)日：2008-07-15

申请号：US10577722

申请日：2004-09-27

Applicant: Mamoru Miyachi ,  Hiroyuki Ota ,  Yoshinori Kimura ,  Kiyofumi Chikuma

Inventor： Mamoru Miyachi ,  Hiroyuki Ota ,  Yoshinori Kimura ,  Kiyofumi Chikuma

IPC: H01L21/00

CPC classification number: H01L33/0079 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/20

Abstract: An underlying layer ALY of GaN is formed on a sapphire substrate SSB; a transfer layer TLY of GaN with a bump and dip shaped surface is formed on the underlying layer ALY; a light absorption layer BLY is formed on the bump and dip shaped surface of the transfer layer TLY; and a grown layer 4 of a planarization layer CLY and a structured light-emitting layer DLY having at least an active layer are formed on the light absorption layer BLY. A support substrate 2 is provided on the grown layer 4. The backside of the sapphire substrate SSB is irradiated with light of the second harmonic of YAG laser (wavelength 532 nm) to decompose the light absorption layer BLY and delaminate the sapphire substrate SSB, thereby allowing the planarization layer CLY of a bump and dip shaped surface to be exposed as a light extraction face.

Abstract translation: 在蓝宝石衬底SSB上形成GaN的下层ALY; 在底层ALY上形成具有凸起和浸渍形状表面的GaN的转移层TLY; 在转印层TLY的凸起和浸渍表面上形成光吸收层BLY; 并且在光吸收层BLY上形成平坦化层CLY的生长层4和至少具有有源层的结构化的发光层DLY。 在生长层4上设置有支撑基板2。 蓝宝石衬底SSB的背面用YAG激光的二次谐波（波长532nm）的光照射，以分解光吸收层BLY并使蓝宝石衬底SSB分层，从而使凸起和浸渍面的平坦化层CLY 被曝光作为光提取面。

公开(公告)号：US20070210916A1

公开(公告)日：2007-09-13

申请号：US11677128

申请日：2007-02-21

Applicant: Munoru Ogushi ,  Keiro Muro ,  Hiroyuki Ota

Inventor： Munoru Ogushi ,  Keiro Muro ,  Hiroyuki Ota

IPC: G08B1/00 ,  G08B29/00 ,  G08C19/16

CPC classification number: G06Q10/0875

Abstract: The object of the invention is to facilitate the entry of a new type of sensor node and the adoption of a new protocol in the existing sensor network system effectively utilizing limited resources of radiocommunication. To achieve the object, the following are provided. A sensor node has a radiocommunication unit that transmits a measured value sensed by a sensor and an identifier of a sensor node as binary measured data. A base station has a radiocommunication controller that receives the measured data from the sensor node, a wire communication controller that transmits the received measured data to a server, a conversion definition information selector that selects conversion definition information corresponding to the identifier included in the measured data out of preset plural conversion definition information and a conversion engine that converts the binary measured data to measured data in a text format based upon the selected conversion definition information. The server has a database that stores the measured data in the text format received via a wired network.

Abstract translation: 本发明的目的是为了便于在现有的传感器网络系统中有效地利用有限的无线电通信资源来引入新型的传感器节点和采用新的协议。 为了实现该目的，提供以下内容。 传感器节点具有无线电通信单元，其传送由传感器感测的测量值和传感器节点的标识符作为二进制测量数据。 基站具有从传感器节点接收测量数据的无线电通信控制器，将接收到的测量数据发送到服务器的有线通信控制器，选择与包括在测量数据中的识别符相对应的转换定义信息的转换定义信息选择器 以及基于所选择的转换定义信息将二进制测量数据转换成文本格式的测量数据的转换引擎。 服务器具有将测量数据存储在经由有线网络接收的文本格式的数据库。

公开(公告)号：US07119362B2

公开(公告)日：2006-10-10

申请号：US10326663

申请日：2002-12-23

Applicant: Ryuji Kono ,  Makoto Kitano ,  Hideo Miura ,  Hiroyuki Ota ,  Yoshishige Endo ,  Takeshi Harada ,  Masatoshi Kanamaru ,  Teruhisa Akashi ,  Atsushi Hosogane ,  Akihiko Ariga ,  Naoto Ban

Inventor： Ryuji Kono ,  Makoto Kitano ,  Hideo Miura ,  Hiroyuki Ota ,  Yoshishige Endo ,  Takeshi Harada ,  Masatoshi Kanamaru ,  Teruhisa Akashi ,  Atsushi Hosogane ,  Akihiko Ariga ,  Naoto Ban

IPC: H01L23/58

CPC classification number: G01R1/07314 ,  G01R1/06744 ,  G01R3/00 ,  G01R31/2863

Abstract: In an electric characteristic testing process corresponding to a process of the semiconductor apparatus manufacturing processes, in order to test a large area of the electrode pad of the body to be tested in a lump, an electric characteristic testing is performed by pressing a testing structure provided with electrically independent projections having a number equal to a number of conductor portions to be tested formed on an area to be tested of a body to be tested to the body to be tested.

公开(公告)号：US20060124692A1

公开(公告)日：2006-06-15

申请号：US11349175

申请日：2006-02-08

Applicant: Rie Aizawa ,  Hiroyuki Ota ,  Hiroaki Abe

Inventor： Rie Aizawa ,  Hiroyuki Ota ,  Hiroaki Abe

IPC: B23K1/08

CPC classification number: B23K3/0653 ,  B23K2101/40

Abstract: A soldering machine includes a solder vessel, an electromagnetic pump, and a nozzle. The solder vessel stores molten solder, and the electromagnetic pump moves the solder by generating electromagnetic force. The electromagnetic pump is submerged below the liquid surface of the solder. The nozzle ejects the solder in the solder vessel onto an object, such as a printed circuit board. Accordingly, the generated heat from the electromagnetic pump is conducted to the solder in the solder vessel, and the solder can be heated to a higher temperature than in the conventional soldering machine.

公开(公告)号：US20050194646A1

公开(公告)日：2005-09-08

申请号：US10882260

申请日：2004-07-02

Applicant: Kengo Inoue ,  Hiroyuki Ota

Inventor： Kengo Inoue ,  Hiroyuki Ota

IPC: H01L21/76 ,  H01L21/31 ,  H01L21/74 ,  H01L21/762 ,  H01L27/08 ,  H01L29/78 ,  H01L31/113

CPC classification number: H01L21/76232 ,  H01L21/31053 ,  H01L21/31111 ,  H01L21/823878 ,  H01L29/7833

Abstract: A semiconductor device manufacturing method includes the steps of: (a) forming a stopper layer for chemical mechanical polishing on a surface of a semiconductor substrate; (b) forming an element isolation trench in the stopper layer and the semiconductor substrate; (c) depositing a nitride film covering an inner surface of the trench; (d) depositing a first oxide film through high density plasma CVD, the first oxide film burying at least a lower portion of the trench deposited with the nitride film; (e) washing out the first oxide film on a side wall of the trench by dilute hydrofluoric acid; (f) depositing a second oxide film by high density plasma CVD, the second oxide film burying the trench after the washing-out; and (g) removing the oxide films on the stopper layer by chemical mechanical polishing.

Abstract translation: 半导体器件制造方法包括以下步骤：（a）在半导体衬底的表面上形成用于化学机械抛光的阻挡层; （b）在所述阻挡层和半导体衬底中形成元件隔离沟槽; （c）沉积覆盖所述沟槽的内表面的氮化物膜; （d）通过高密度等离子体CVD沉积第一氧化物膜，第一氧化膜埋入沉积有氮化物膜的沟槽的至少下部; （e）通过稀氢氟酸在沟槽的侧壁上洗出第一氧化膜; （f）通过高密度等离子体CVD沉积第二氧化膜，第二氧化膜在洗出之后埋入沟槽; 和（g）通过化学机械抛光去除阻挡层上的氧化物膜。

公开(公告)号：US20050018749A1

公开(公告)日：2005-01-27

申请号：US10873461

申请日：2004-06-23

Applicant: Taiga Sato ,  Hiroyuki Ota ,  Tetsuya Sato ,  Yoshihide Onishi

Inventor： Taiga Sato ,  Hiroyuki Ota ,  Tetsuya Sato ,  Yoshihide Onishi

IPC: G01K7/00 ,  A61B5/01 ,  G01J5/00 ,  G01J5/02 ,  G01J5/04 ,  G01K13/00

CPC classification number: G01J5/04 ,  G01J5/02 ,  G01J5/025 ,  G01J5/026 ,  G01J5/049 ,  G01J2005/068

Abstract: Temperature states of a clinical thermometer body and an environment are estimated by temperatures measured by a first temperature sensor integrally formed together with an infrared sensor arranged to the distal end of a probe and a second temperature sensor arranged on the bottom side of a probe holder, and processes suitable for the respective temperature states are performed. An estimation error or the reliability of an estimation value is calculated by the temperatures to notify a user of the estimation error or the reliability by an LCD or the like.

Abstract translation: 通过与设置在探头的远端的红外线传感器一体形成的第一温度传感器和布置在探针保持器的底侧的第二温度传感器测量的温度估计临床体温计体和环境的温度状态， 并且执行适合于各自的温度状态的处理。 通过温度来计算估计误差或估计值的可靠性，以通过LCD等通知用户估计误差或可靠性。