公开(公告)号：US20130221455A1

公开(公告)日：2013-08-29

申请号：US13405513

申请日：2012-02-27

Applicant: Christopher D. Manack ,  Frank Stepniak ,  Sreenivasan K. Koduri

Inventor： Christopher D. Manack ,  Frank Stepniak ,  Sreenivasan K. Koduri

IPC: H01L29/84 ,  H01L29/66 ,  H01L21/02 ,  H01L31/02

CPC classification number: B81C1/00246 ,  B81B7/0067 ,  B81B2201/0207 ,  B81C1/00269 ,  G01J5/045 ,  G01J5/12 ,  H01L24/24 ,  H01L24/82 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/24245 ,  H01L2224/32245 ,  H01L2224/82039 ,  H01L2224/92144 ,  H01L2224/97 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/1433 ,  H01L2924/1434 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2224/83 ,  H01L2224/82

Abstract: An embedded micro-electro-mechanical system (MEMS) (100) comprising a semiconductor chip (101) embedded in an insulating board (120), the chip having a cavity (102) including a radiation sensor MEMS (105), the opening (104) of the cavity at the chip surface covered by a plate (110) transmissive to the radiation (150) sensed by the MEMS. The plate surface remote from the cavity having a bare central area, to be exposed to the radiation sensed by the MEMS in the cavity, and a peripheral area covered by a metal film (111) touching the plate surface and a layer (112) of adhesive stacked on the metal film.

Abstract translation: 一种嵌入式微电子机械系统（MEMS）（100），包括嵌入在绝缘板（120）中的半导体芯片（101），所述芯片具有包括辐射传感器MEMS（105）的空腔（102），所述开口 在由芯片感测到的辐射（150）透射的板（110）覆盖的芯片表面处的腔的空腔（104）。 离开空腔的板表面具有裸露的中心区域，以暴露于由空腔内的MEMS感测的辐射，以及由接触板表面的金属膜（111）覆盖的周边区域和覆盖板（112）的层 粘合剂堆叠在金属膜上。

公开(公告)号：US20130205895A1

公开(公告)日：2013-08-15

申请号：US13397318

申请日：2012-02-15

Applicant: Brian Lee Wardle ,  Fabio Ferrucci Fachin ,  Stefan Nikles ,  Matthew Varghese

Inventor： Brian Lee Wardle ,  Fabio Ferrucci Fachin ,  Stefan Nikles ,  Matthew Varghese

IPC: G01P15/00 ,  H05K13/04

CPC classification number: B81C1/00007 ,  B81B2201/0207 ,  B81B2201/0235 ,  B81C1/00142 ,  B81C1/00158 ,  B81C1/0019 ,  G01P15/00 ,  G01P15/008 ,  G01P15/0802 ,  Y10T29/49117 ,  Y10T29/49155

Abstract: The disclosure generally relates to method and apparatus for forming three-dimensional MEMS. More specifically, the disclosure relates to a method of controlling out-of-plane buckling in microstructural devices so as to create micro-structures with out-of-plane dimensions which are 1×, 5×, 10×, 100× or 500× the film's thickness or above the surface of the wafer. An exemplary device formed according to the disclosed principles, includes a three dimensional accelerometer having microbridges extending both above and below the wafer surface.

公开(公告)号：US07303997B1

公开(公告)日：2007-12-04

申请号：US11544591

申请日：2006-10-10

Applicant: Philips Laou ,  Merel Philippe

Inventor： Philips Laou ,  Merel Philippe

IPC: H01L21/302

CPC classification number: B81C1/00142 ,  B81B2201/0207 ,  B81B2201/0278 ,  B81B2203/0109 ,  G01J5/02 ,  G01J5/024 ,  G01J5/04 ,  G01J5/046 ,  G01J5/20

Abstract: Microbolometers with regionally thinned microbridges are produced by depositing a thin film (0.6 μm) of silicon nitride on a silicon substrate, forming microbridges on the substrate, etching the thin film to define windows in a pixel area, thinning the windows, releasing the silicon nitride, depositing a conductive YBaCuO film on the bridges, depositing a conductive film (Au) on the YBaCuO film, and removing selected areas of the YBaCuO and conductive films.

Abstract translation: 通过在硅衬底上沉积氮化硅薄膜（0.6μm），在衬底上形成微桥，蚀刻薄膜以限定像素区中的窗口，使窗户变薄，释放氮化硅，从而产生具有区域薄化微桥的微伏热计 在桥上沉积导电YBaCuO膜，在YBaCuO膜上沉积导电膜（Au），并去除YBaCuO和导电膜的选定区域。

公开(公告)号：US20050017276A1

公开(公告)日：2005-01-27

申请号：US10877696

申请日：2004-06-25

Applicant: Kimiya Ikushima ,  Hiroyoshi Komobuchi ,  Mikiya Uchida

Inventor： Kimiya Ikushima ,  Hiroyoshi Komobuchi ,  Mikiya Uchida

IPC: B81B3/00 ,  G01F1/684 ,  G01J5/10 ,  G01J5/20 ,  G01J5/34 ,  H01L31/062

CPC classification number: G01J5/20 ,  B81B3/0072 ,  B81B2201/0207 ,  B81B2203/0127 ,  B81C1/00047 ,  B81C1/00801 ,  B81C2201/0109 ,  B81C2201/014 ,  G01F1/6845 ,  G01J5/023 ,  G01J5/024 ,  G01J5/045 ,  G01J5/10 ,  G01J5/34

Abstract: A method for fabricating an electronic device includes the steps of: preparing a cavity defining sacrificial layer, at least the upper surface of which is covered with an etch stop layer; forming at least one first opening in the etch stop layer, thereby partially exposing the surface of the cavity defining sacrificial layer; etching the cavity defining sacrificial layer through the first opening, thereby defining a provisional cavity under the etch stop layer and a supporting portion that supports the etch stop layer thereon; and etching away a portion of the etch stop layer, thereby defining at least one second opening that reaches the provisional cavity through the etch stop layer and expanding the provisional cavity into a final cavity.

Abstract translation: 一种制造电子器件的方法包括以下步骤：制备限定牺牲层的空腔，其至少其上表面被蚀刻停止层覆盖; 在蚀刻停止层中形成至少一个第一开口，从而部分地暴露限定牺牲层的空腔的表面; 蚀刻通过所述第一开口限定牺牲层的所述腔，从而在所述蚀刻停止层下方限定临时空腔，以及在其上支撑所述蚀刻停止层的支撑部分; 并且蚀刻掉蚀刻停止层的一部分，从而限定通过蚀刻停止层到达临时腔的至少一个第二开口，并将临时空腔膨胀成最终空腔。